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Vishay Siliconix 2N7002E
- Part No.:
- 2N7002E
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
2N7002E.pdf
- Description:
- MOSFET N-CH 60V 240MA SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,795
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Product details
Overview
2N7002E from Vishay Siliconix is an N-channel enhancement-mode MOSFET designed for low-voltage switching in logic-level interface circuits. It features 60 V drain-source breakdown voltage, 3 Ω RDS(on) at VGS = 10 V, 240 mA continuous drain current, and operates with a typical gate threshold of 2 V - enabling direct drive from 3.3 V or 5 V microcontrollers in battery-powered load control applications.
For engineers reviewing the 2N7002E datasheet, 2N7002E pinout, 2N7002E application, or 2N7002E equivalent, key selection considerations include its SOT-23 package compatibility, low gate charge (0.6 nC), fast switching (20 ns turn-off), robust thermal resistance (357 °C/W), and RoHS-compliant, halogen-free construction per IEC 61249-2-21.
Technical Context
The 2N7002E employs a planar silicon-gate process optimized for low-threshold operation and stable RDS(on) across temperature. Its gate threshold voltage (1–2.5 V) ensures reliable turn-on with standard logic outputs, while its 25 pF input capacitance and 0.6 nC total gate charge support efficient driving without buffer stages.
As a discrete small-signal MOSFET, it functions as a unidirectional switch in source-grounded configurations. The body diode has VSD = 0.85–1.2 V at 200 mA, and leakage remains below 1 µA at VDS = 60 V, supporting low-power standby integrity in portable systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports rail-to-rail switching up to 60 V DC without avalanche stress |
| RDS(on) | 3 Ω at VGS = 10 V - delivers ≤0.18 W conduction loss at 240 mA, suitable for low-duty-cycle loads |
| ID (cont) | 240 mA at TA = 25 °C - enables compact PCB layout without heatsinking in ambient-limited spaces |
| VGS(th) | 2 V (typ.) - ensures full enhancement with 3.3 V GPIO, eliminating level-shifter requirement |
| Ciss | 21 pF - minimizes gate drive energy and reduces EMI in high-frequency PWM control |
| td(off) | 20 ns - supports >1 MHz switching in LED dimming or relay debouncing circuits |
| PD | 0.35 W at TA = 25 °C - defines maximum power handling before thermal derating begins |
Pinout & Package
Package: TO-236 (SOT-23), 3-lead plastic surface-mount package with dimensions 2.80 × 2.10 × 1.02 mm (D × E × A2). Marking code "7E" on top surface. RoHS-compliant, lead-free, halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives logic-level voltage to modulate channel conductivity; requires <10 nC charge for full turn-on |
| 2 (Source) | Reference node / return path | Connected to system ground in low-side switch configuration; body diode anode |
| 3 (Drain) | Load connection terminal | Switches positive supply to load; cathode of integrated body diode; rated for 60 V transient |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - compatible with 3.3 V and 5 V MCU outputs without external drivers |
| Low input capacitance | Ciss = 21 pF - reduces gate drive power and improves switching efficiency in battery-constrained designs |
| Fast switching speed | td(off) = 20 ns - enables clean edge transitions in digital load control and pulse-width modulation |
| Low leakage performance | IDSS ≤ 1 µA at VDS = 60 V - preserves battery life in always-on monitoring circuits |
| Halogen-free & RoHS | Complies with IEC 61249-2-21 and Directive 2002/95/EC - meets global environmental compliance requirements |
Applications
| LED Driver Circuit | Microcontroller I/O Expander |
|---|---|
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V MCU GPIO pins in handheld medical devices. IC Role / Device Role: Low-side switch controlling LED anode-to-VCC current path. Use Value: 2 V threshold ensures full saturation at 3.3 V drive; 3 Ω RDS(on) limits voltage drop to <66 mV, preserving LED brightness. |
Use Scenario: Adding discrete output capability to resource-constrained MCUs lacking sufficient GPIOs. IC Role / Device Role: Signal-level translator and current amplifier for peripheral enable lines. Use Value: 240 mA rating supports multiple parallel loads; fast 20 ns turn-off prevents signal skew in synchronized peripherals. |
| Battery-Powered Relay Control | Low-Power Solid-State Relay |
Use Scenario: Activating 5 V, 100 Ω coil relays in IoT sensor nodes powered by CR2032 coin cells. IC Role / Device Role: High-efficiency coil driver replacing bipolar transistors. Use Value: 0.6 nC Qg minimizes charge demand during frequent actuation; 1 µA IDSS extends shelf life. |
Use Scenario: Replacing electromechanical relays in smart home controllers requiring silent, bounce-free switching. IC Role / Device Role: Bidirectional load switch with integrated body diode for flyback protection. Use Value: VDS = 60 V withstands inductive kickback; 0.85 V VSD limits forward conduction loss in AC-coupled paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004K-7 | RDS(on) = 2.2 Ω @ VGS = 4.5 V; higher ID = 450 mA; same SOT-23 package | Better suited for higher-current loads (e.g., solenoids >300 mA); slightly higher gate charge (0.8 nC) | Select when lower on-resistance and higher current headroom are required without changing footprint |
| BS170 | VDS = 60 V but RDS(on) = 5 Ω @ VGS = 10 V; older planar process; higher Ciss = 40 pF | Slower switching (td(off) ≈ 60 ns); less efficient at 3.3 V due to higher VGS(th) (2.5–4 V) | Consider only for legacy redesigns where parametric margin is acceptable and cost sensitivity outweighs performance |
Compared with DMN2004K-7 and BS170, the 2N7002E offers optimal balance of gate drive simplicity, thermal efficiency, and footprint compatibility - making it preferred for space-constrained, battery-operated logic-level switching where 240 mA and 3 Ω RDS(on) meet design targets.
Availability
2N7002E is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O expansion, battery-powered relay control, and low-power solid-state relay implementations requiring stable component supply and long-term manufacturability.
Supply support for 2N7002E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability, miniaturization, and application-specific optimization.
The 2N7002E belongs to Vishay's logic-level N-channel MOSFET product line, engineered for direct interfacing with modern low-voltage digital ICs in portable, automotive, and industrial control systems.
FAQ
What is the maximum continuous drain current for the 2N7002E at 70 °C ambient temperature?
The 2N7002E supports 190 mA continuous drain current at TA = 70 °C, reflecting thermal derating from its 240 mA rating at 25 °C. This value is defined under steady-state conditions with no forced airflow and assumes standard PCB copper area per Vishay's SOT-23 pad recommendations. Exceeding this current without thermal mitigation risks junction temperature exceeding 150 °C.
Can the 2N7002E be used with a 3.3 V microcontroller GPIO without a level shifter?
Yes - the 2N7002E has a typical gate threshold voltage of 2 V and guaranteed turn-on at VGS ≥ 4.5 V. At 3.3 V drive, it achieves RDS(on) ≤ 4 Ω (at ID = 200 mA), delivering sufficient enhancement for most low-current switching tasks. Its low input capacitance (21 pF) also avoids excessive GPIO loading.
What is the body diode forward voltage specification for the 2N7002E?
The 2N7002E body diode exhibits VSD = 0.85–1.2 V at IS = 200 mA and VGS = 0 V, measured at 25 °C. This diode conducts from source to drain and is integral to flyback energy handling in inductive load switching - critical for relay and solenoid drive reliability.
Is the 2N7002E suitable for PWM dimming of white LEDs?
Yes - the 2N7002E supports PWM frequencies up to several MHz due to its 20 ns turn-off time and low gate charge (0.6 nC). At 1 kHz–100 kHz PWM, it delivers minimal switching loss and maintains consistent LED current regulation when paired with appropriate gate drive impedance (e.g., 10 Ω series resistor).
Does the 2N7002E have a specified avalanche rating?
No - the 2N7002E datasheet does not specify rated single-pulse or repetitive avalanche energy (EAS). It is intended for clamped inductive switching only when used with external flyback protection (e.g., freewheeling diode). For unclamped inductive loads, voltage transients must remain within the 60 V VDS limit to avoid device failure.
2N7002E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 340mA
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 21 pF @ 5 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
2N7002E FAQ
1.How can I place an order for 2N7002E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N7002E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N7002E reliable?
The price and inventory of 2N7002E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002E is usually 5 days.
3.What payment methods are accepted for 2N7002E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N7002E?
2N7002E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N7002E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N7002E?
For technical support, including 2N7002E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002E requirements.
6.How does Aetrix verify that 2N7002E is sourced from the original manufacturer or authorized distributors?
All 2N7002E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002E meets industry standards.
7.What is the process for return or replacement of 2N7002E?
All 2N7002E units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N7002E part is unused and in its original packaging.
Return procedure for 2N7002E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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