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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N7002E-T1-E3

Name: 2N7002E-T1-E3
Brand: Vishay Siliconix
SKU: 2N7002E-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002E-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2N7002E-T1-E3.pdf

Description:: MOSFET N-CH 60V 240MA SOT23-3

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Product details

Overview

2N7002E-T1-E3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET rated for 60 V drain-source voltage, with typical R_DS(on) of 3 Ω at V_GS = 10 V and 4.5 V gate threshold enabling direct TTL/CMOS logic-level drive. It delivers 240 mA continuous drain current in SOT-23 package and is widely used in low-power switching applications such as LED drivers and battery-operated load control.

For engineers reviewing the 2N7002E-T1-E3 datasheet, 2N7002E-T1-E3 pinout, 2N7002E-T1-E3 application, or 2N7002E-T1-E3 equivalent, key selection criteria include verified 60 V V_DS, sub-2.5 V V_GS(th) typ., 25 pF C_iss, fast 13–20 ns turn-on time, and RoHS-compliant Pb-free construction per ordering code T1-E3.

Technical Context

This discrete MOSFET operates in enhancement mode with a single N-channel structure optimized for low-voltage logic interfacing. Its gate threshold voltage (1–2.5 V) ensures reliable turn-on from 3.3 V and 5 V digital outputs, while its 357 °C/W thermal resistance limits power dissipation to 350 mW at 25 °C ambient.

The device features integrated body diode with 0.85–1.2 V forward voltage at 200 mA, and exhibits stable R_DS(on) across -55 to 150 °C junction temperature range. Switching performance-including 0.4–0.6 nC total gate charge and 21 pF input capacitance-is specified under standardized 10 V V_DD, 40 Ω load, and 10 Ω gate drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche breakdown; supports 24 V industrial rails with margin.
R_DS(on)	3 Ω @ V_GS = 10 V - Enables <100 mW conduction loss at 200 mA; validated at 25 °C and 125 °C.
V_GS(th)	1–2.5 V - Ensures full enhancement from standard 3.3 V microcontroller GPIO without level-shifting.
C_iss	21 pF - Low input capacitance reduces gate drive power and speeds up switching in high-frequency PWM.
t_d(on)	13–20 ns - Fast turn-on enables >1 MHz switching in low-side load switching and LED dimming.
I_D (cont)	240 mA @ T_A = 25 °C - Sufficient for driving relays, small solenoids, and indicator LEDs in portable systems.
P_D	0.35 W - Power limit defined by SOT-23 thermal resistance; derates linearly to 0.22 W at 70 °C ambient.

Pinout & Package

2N7002E-T1-E3 is housed in a standard SOT-23 (TO-236) plastic surface-mount package with gull-wing leads and marking code "7E". Dimensions conform to JEDEC TO-236AB: D = 2.80–3.04 mm, E = 2.10–2.64 mm, e = 0.95 mm (BSC), and thermal pad not included.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives logic-level voltage to modulate channel conductivity; requires <0.6 nC charge for full turn-on.
2 (Source)	Reference node	Common return path for load current; tied to system ground in low-side switch configuration.
3 (Drain)	Power output node	Connects to load (e.g., relay coil or LED anode); blocks up to 60 V when gate is low.

Key Features

Feature	Design Value
Halogen-free construction	Complies with IEC 61249-2-21; eliminates brominated flame retardants in PCB assembly.
Low input leakage	±10 nA I_GSS at ±15 V gate bias-minimizes standby current in always-on battery circuits.
Fast switching speed	13–20 ns t_d(on) and 18–25 ns t_d(off)-reduces transition losses in PWM-driven loads.
Low output leakage	1 µA I_DSS at 60 V V_DS-ensures minimal off-state power drain in sleep-mode systems.
RoHS compliance	Lead-free per Directive 2002/95/EC; T1-E3 suffix confirms Pb-free terminations and packaging.

Applications

LED Driver Circuit	Microcontroller GPIO Expander
Use Scenario: Driving multiple 20 mA indicator LEDs from a 3.3 V MCU with limited I/O current capability. IC Role / Device Role / Timing Role: Low-side switch controlled directly by MCU GPIO pin without external driver. Use Value: 2V typical V_GS(th) ensures full enhancement at 3.3 V; 3 Ω R_DS(on) limits LED series resistor power loss.	Use Scenario: Adding discrete on/off control for peripherals (e.g., sensors, displays) where MCU pins are scarce. IC Role / Device Role / Timing Role: Logic-level–compatible load switch enabling software-controlled power gating. Use Value: 240 mA I_D supports multiple parallel loads; fast 13 ns turn-on allows responsive peripheral enable timing.
Battery-Powered Relay Control	Solid-State Relay Replacement
Use Scenario: Activating 5 V, 100 mA reed relays in portable test equipment powered by Li-ion cells. IC Role / Device Role / Timing Role: Low-power interface between battery-backed MCU and relay coil. Use Value: 60 V V_DS withstands relay coil flyback spikes; 0.35 W P_D accommodates brief 100 ms activation pulses.	Use Scenario: Replacing electromechanical relays in HVAC sensor modules requiring silent, long-life switching. IC Role / Device Role / Timing Role: Solid-state replacement for SPST mechanical relay in 24 V DC control loops. Use Value: 25 pF C_iss and 7.5 ns propagation delay support clean zero-crossing–free switching; no contact wear or bounce.

LED Driver Circuit

Microcontroller GPIO Expander

Use Scenario: Driving multiple 20 mA indicator LEDs from a 3.3 V MCU with limited I/O current capability.

IC Role / Device Role / Timing Role: Low-side switch controlled directly by MCU GPIO pin without external driver.

Use Value: 2V typical V_GS(th) ensures full enhancement at 3.3 V; 3 Ω R_DS(on) limits LED series resistor power loss.

Use Scenario: Adding discrete on/off control for peripherals (e.g., sensors, displays) where MCU pins are scarce.

IC Role / Device Role / Timing Role: Logic-level–compatible load switch enabling software-controlled power gating.

Use Value: 240 mA I_D supports multiple parallel loads; fast 13 ns turn-on allows responsive peripheral enable timing.

Battery-Powered Relay Control

Solid-State Relay Replacement

Use Scenario: Activating 5 V, 100 mA reed relays in portable test equipment powered by Li-ion cells.

IC Role / Device Role / Timing Role: Low-power interface between battery-backed MCU and relay coil.

Use Value: 60 V V_DS withstands relay coil flyback spikes; 0.35 W P_D accommodates brief 100 ms activation pulses.

Use Scenario: Replacing electromechanical relays in HVAC sensor modules requiring silent, long-life switching.

IC Role / Device Role / Timing Role: Solid-state replacement for SPST mechanical relay in 24 V DC control loops.

Use Value: 25 pF C_iss and 7.5 ns propagation delay support clean zero-crossing–free switching; no contact wear or bounce.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	R_DS(on) = 2.8 Ω @ V_GS = 4.5 V; higher 300 mA I_D; same SOT-23 package.	Better suited for 4.5 V rail operation; slightly lower on-resistance improves efficiency at mid-voltage.	Select when operating from 4.5 V supply and prioritizing conduction loss over gate drive simplicity.
BS170	V_DS = 60 V but R_DS(on) = 5 Ω @ V_GS = 10 V; slower 25 ns t_d(on); legacy TO-92 package.	Limited to through-hole prototyping; higher on-resistance increases thermal stress in SMT production.	Use only for legacy board repair or breadboard validation; not recommended for new SMT designs.

Compared with DMN2004K-7 and BS170, the 2N7002E-T1-E3 offers optimal balance of 3.3 V logic compatibility, Pb-free SOT-23 footprint, and verified 60 V/240 mA rating-making it preferred for space-constrained, battery-powered, and high-volume consumer electronics.

Availability

2N7002E-T1-E3 is available at Aetrix Electronics and suitable for LED drivers, microcontroller GPIO expansion, and battery-powered relay control requiring stable component supply and full RoHS compliance.

Supply support for 2N7002E-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and automotive-grade qualification.

The 2N7002E-T1-E3 belongs to Vishay's general-purpose logic-level N-channel MOSFET product line, engineered for cost-sensitive, low-power switching in consumer, computing, and industrial control applications.

FAQ

What is the maximum continuous drain current for the 2N7002E-T1-E3 at 70 °C ambient temperature?

The 2N7002E-T1-E3 supports 190 mA continuous drain current at 70 °C ambient temperature, as specified in the Absolute Maximum Ratings table. This derating reflects its 357 °C/W thermal resistance and 0.22 W power dissipation limit at that temperature. Designers must verify junction temperature rise using actual PCB copper area and airflow conditions before finalizing thermal design for the 2N7002E-T1-E3.

Does the 2N7002E-T1-E3 have a built-in body diode, and what is its forward voltage?

Yes, the 2N7002E-T1-E3 includes an intrinsic source-drain body diode with a forward voltage of 0.85–1.2 V at 200 mA source current and 25 °C junction temperature. This diode enables freewheeling in inductive load applications like relay coils and is characterized across temperature-dropping to ~0.85 V at 85 °C and rising to ~1.2 V at -55 °C. The 2N7002E-T1-E3 body diode is not rated for reverse recovery and should not be used in high-speed synchronous rectification.

Is the 2N7002E-T1-E3 pin-compatible with the original 2N7002?

Yes, the 2N7002E-T1-E3 maintains identical pinout, package outline, and terminal assignment (Gate-Source-Drain on pins 1–2–3) as the legacy 2N7002. However, the 2N7002E-T1-E3 features improved gate threshold consistency (1–2.5 V vs. older 2–4 V spread), lower R_DS(on), and Pb-free terminations. No PCB layout changes are required when upgrading from 2N7002 to 2N7002E-T1-E3, provided the design accounts for tighter V_GS(th) distribution and updated thermal derating curves.

What is the gate charge requirement to fully turn on the 2N7002E-T1-E3?

The 2N7002E-T1-E3 requires 0.4–0.6 nC total gate charge (Q_g) to switch from off to on under standard test conditions (V_DS = 10 V, I_D ≈ 250 mA). This low Q_g enables direct drive from low-current MCU GPIO pins without external buffer stages. Gate-source charge (Q_gs) is 0.06 nC and gate-drain charge (Q_gd) is also 0.06 nC-both contributing to the device's fast 13 ns turn-on time. These values are measured and guaranteed per Vishay Document Number 70860.

Can the 2N7002E-T1-E3 be used in analog linear mode (e.g., as a voltage-controlled resistor)?

No, the 2N7002E-T1-E3 is not characterized or guaranteed for linear (ohmic) region operation. Its R_DS(on) specification applies only in the fully enhanced saturation region, and its transconductance (g_fs = 600 mS typ.) is specified at V_DS = 15 V-not for precision analog gain control. The 2N7002E-T1-E3 lacks guaranteed linearity, thermal stability, or SOA curves needed for analog use; dedicated analog switches or JFETs should be selected instead.

2N7002E-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 240mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 21 pF @ 5 V

FET Feature:: -

Power Dissipation (Max):: 350mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

2N7002E-T1-E3 FAQ

1.How can I place an order for 2N7002E-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002E-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002E-T1-E3 reliable?

The price and inventory of 2N7002E-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002E-T1-E3 is usually 5 days.

3.What payment methods are accepted for 2N7002E-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002E-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002E-T1-E3?

2N7002E-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002E-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002E-T1-E3?

For technical support, including 2N7002E-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002E-T1-E3 requirements.

6.How does Aetrix verify that 2N7002E-T1-E3 is sourced from the original manufacturer or authorized distributors?

All 2N7002E-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002E-T1-E3 meets industry standards.

7.What is the process for return or replacement of 2N7002E-T1-E3?

All 2N7002E-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002E-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002E-T1-E3 part is unused and in its original packaging.

Return procedure for 2N7002E-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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