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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N7002E-T1-GE3

Name: 2N7002E-T1-GE3
Brand: Vishay Siliconix
SKU: 2N7002E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2N7002E-T1-GE3.pdf

Description:: MOSFET N-CH 60V 240MA TO236

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Product details

Overview

2N7002E-T1-GE3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET rated for 60 V drain-source voltage, with 3 Ω R_DS(on) at V_GS = 10 V and 240 mA continuous drain current. It features low threshold voltage (2 V typ.), fast switching (13–20 ns turn-on), and SOT-23 packaging-ideal for logic-level interfacing in battery-powered load switching.

For engineers reviewing the 2N7002E-T1-GE3 datasheet, 2N7002E-T1-GE3 pinout, 2N7002E-T1-GE3 application, or 2N7002E-T1-GE3 equivalent, key selection criteria include gate drive compatibility with 3.3 V/5 V logic, thermal resistance (357 °C/W), and halogen-free/RoHS-compliant construction per IEC 61249-2-21.

Technical Context

This discrete MOSFET operates as a single N-channel switch with enhancement-mode gate control, requiring positive V_GS to conduct. Its 60 V V_DS rating supports mid-voltage rail applications, while 2 V typical V_GS(th) enables direct TTL/CMOS drive without level-shifting.

Thermal performance is constrained by its SOT-23 package: 0.35 W power dissipation at 25 °C ambient and 357 °C/W junction-to-ambient thermal resistance. Switching behavior is temperature-stable per specification note - turn-on/off times remain consistent across -55 to 150 °C operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports switching up to 60 V DC loads without breakdown
R_DS(on)	3 Ω at V_GS = 10 V - limits conduction loss to ≤0.18 W at 240 mA
V_GS(th)	2 V (typ.) - ensures reliable turn-on with standard 3.3 V logic outputs
C_iss	21 pF - enables fast switching with minimal gate drive energy (Q_g = 0.4–0.6 nC)
I_D (cont)	240 mA at T_A = 25 °C - suitable for low-power solenoid, LED, and relay drivers
T_J Range	-55 to +150 °C - qualified for industrial and automotive under-hood auxiliary circuits

Pinout & Package

Package: TO-236 (SOT-23), 3-lead surface-mount plastic package with dimensions per Vishay Doc. 71196 (D = 2.80–3.04 mm, E = 2.10–2.64 mm, A2 = 0.88–1.02 mm). Marking code "7E" on top surface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; internal body diode cathode
2 (Gate)	Control electrode for channel formation	High-impedance input requiring <10 nA leakage; drives with 0.6 nC total charge
3 (Drain)	Load connection point for switched current	Handles 60 V max potential; connects to positive rail or load high-side

Key Features

Feature	Design Value
Halogen-free construction	Complies with IEC 61249-2-21 - eliminates brominated flame retardants for safer end-of-life processing
Low input capacitance	21 pF C_iss - reduces gate drive power and enables >1 MHz switching in low-energy systems
Logic-level gate threshold	2 V typical V_GS(th) - eliminates need for gate driver ICs when driven by 3.3 V microcontrollers
Fast switching speed	13–20 ns turn-on time - minimizes transition losses in PWM-controlled LED or motor circuits

Applications

LED Driver Circuits	Microcontroller GPIO Expanders
Use Scenario: Driving 20–100 mA indicator or status LEDs from MCU GPIO pins with limited current sourcing capability. IC Role / Device Role / Timing Role: Low-side switch controlled directly by 3.3 V or 5 V logic output. Use Value: Eliminates external buffer transistors; R_DS(on) ≤ 3 Ω ensures <300 mV drop at 100 mA, preserving LED forward voltage margin.	Use Scenario: Extending digital I/O count using discrete MOSFETs as open-drain or push-pull switches for peripheral enable lines. IC Role / Device Role / Timing Role: Signal-level translator and current amplifier for enabling sensors, displays, or communication modules. Use Value: Fast 13 ns turn-on supports timing-critical enable sequencing; low 25 pF C_iss prevents signal integrity degradation on 10+ MHz control lines.
Battery-Powered Load Switching	Solid-State Relay Replacement
Use Scenario: Power gating subcircuits (e.g., RF modules, sensors) in portable devices to extend battery life. IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-current load disconnect switch. Use Value: IGSS ≤ ±10 nA ensures <1 µA standby leakage; 240 mA rating covers most BLE/Wi-Fi module peak currents.	Use Scenario: Replacing electromechanical relays in PLC I/O modules or test equipment where bounce-free, long-life switching is required. IC Role / Device Role / Timing Role: Solid-state replacement for SPST mechanical relay in 24 V DC control loops. Use Value: 60 V V_DS withstands inductive kickback; 1.2 Ω min R_DS(on) yields lower heat vs. relay coil power, enabling compact PCB layout.

LED Driver Circuits

Microcontroller GPIO Expanders

Use Scenario: Driving 20–100 mA indicator or status LEDs from MCU GPIO pins with limited current sourcing capability.

IC Role / Device Role / Timing Role: Low-side switch controlled directly by 3.3 V or 5 V logic output.

Use Value: Eliminates external buffer transistors; R_DS(on) ≤ 3 Ω ensures <300 mV drop at 100 mA, preserving LED forward voltage margin.

Use Scenario: Extending digital I/O count using discrete MOSFETs as open-drain or push-pull switches for peripheral enable lines.

IC Role / Device Role / Timing Role: Signal-level translator and current amplifier for enabling sensors, displays, or communication modules.

Use Value: Fast 13 ns turn-on supports timing-critical enable sequencing; low 25 pF C_iss prevents signal integrity degradation on 10+ MHz control lines.

Battery-Powered Load Switching

Solid-State Relay Replacement

Use Scenario: Power gating subcircuits (e.g., RF modules, sensors) in portable devices to extend battery life.

IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-current load disconnect switch.

Use Value: IGSS ≤ ±10 nA ensures <1 µA standby leakage; 240 mA rating covers most BLE/Wi-Fi module peak currents.

Use Scenario: Replacing electromechanical relays in PLC I/O modules or test equipment where bounce-free, long-life switching is required.

IC Role / Device Role / Timing Role: Solid-state replacement for SPST mechanical relay in 24 V DC control loops.

Use Value: 60 V V_DS withstands inductive kickback; 1.2 Ω min R_DS(on) yields lower heat vs. relay coil power, enabling compact PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 2.2 Ω @ V_GS = 4.5 V; higher ID = 420 mA; same SOT-23 package	Better suited for higher-current loads (>300 mA) with identical footprint	Select when lower conduction loss at 3.3 V drive is critical and board space is constrained
NTMFS4C06NT1G	R_DS(on) = 2.8 mΩ @ V_GS = 10 V; SO-8FL package; 60 V rating; 50 A rated	Designed for high-power, high-density DC-DC and motor control-not drop-in compatible	Choose only for new designs requiring >10× current capacity and thermal derating headroom

Compared with DMN2004LK-7 and NTMFS4C06NT1G, the 2N7002E-T1-GE3 offers optimal balance of cost, size, and logic-level drivability for sub-300 mA loads - its 2 V V_GS(th) and SOT-23 footprint make it uniquely suitable for space-constrained, low-voltage embedded control.

Availability

2N7002E-T1-GE3 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, and battery-powered load switching requiring stable component supply and halogen-free compliance.

Supply support for 2N7002E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete MOSFETs, diodes, optoelectronics, and passive components, with vertical integration across wafer fabrication and packaging.

The 2N7002E series targets cost-sensitive, high-volume logic-level switching applications - designed specifically for direct interface with 3.3 V/5 V digital outputs in portable, industrial, and automotive auxiliary systems.

FAQ

What is the maximum continuous drain current for the 2N7002E-T1-GE3 at 70 °C ambient?

The 2N7002E-T1-GE3 supports 190 mA continuous drain current at TA = 70 °C, derated from 240 mA at 25 °C due to thermal limitations of its SOT-23 package and 357 °C/W R_thJA. This value assumes no PCB copper heatsinking and natural convection cooling.

Is the 2N7002E-T1-GE3 suitable for driving a 12 V relay coil drawing 50 mA?

Yes - the 2N7002E-T1-GE3 is well-suited for this application. With R_DS(on) ≤ 3 Ω at V_GS = 5 V, voltage drop is <150 mV at 50 mA, leaving >11.8 V across the relay coil. Its 60 V V_DS rating safely handles inductive flyback spikes.

Does the 2N7002E-T1-GE3 have a built-in body diode, and what is its forward voltage?

Yes, the 2N7002E-T1-GE3 includes an intrinsic source-drain body diode. Its forward voltage is 0.85–1.2 V at IS = 200 mA and V_GS = 0 V, verified per Vishay Doc. 70860. This diode conducts during inductive load turn-off and must be considered in flyback path design.

What is the gate charge requirement to fully switch the 2N7002E-T1-GE3?

The 2N7002E-T1-GE3 requires 0.4–0.6 nC total gate charge (Q_g) at V_DS = 10 V and V_GS = 4.5 V. This low Q_g allows fast switching with minimal drive strength - even weak MCU GPIO pins can achieve <20 ns transitions without external buffers.

How does the 2N7002E-T1-GE3 differ from the standard 2N7002 in terms of environmental compliance?

The 2N7002E-T1-GE3 is both lead-free and halogen-free per IEC 61249-2-21, whereas the base 2N7002 may meet RoHS but not halogen-free requirements. The "GE3" suffix explicitly denotes full halogen-free construction, critical for aerospace and green electronics certifications.

2N7002E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 240mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 21 pF @ 5 V

FET Feature:: -

Power Dissipation (Max):: 350mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236

2N7002E-T1-GE3 FAQ

1.How can I place an order for 2N7002E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002E-T1-GE3 reliable?

The price and inventory of 2N7002E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for 2N7002E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002E-T1-GE3?

2N7002E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002E-T1-GE3?

For technical support, including 2N7002E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002E-T1-GE3 requirements.

6.How does Aetrix verify that 2N7002E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All 2N7002E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of 2N7002E-T1-GE3?

All 2N7002E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002E-T1-GE3 part is unused and in its original packaging.

Return procedure for 2N7002E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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