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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N7002-T1-GE3

Name: 2N7002-T1-GE3
Brand: Vishay Siliconix
SKU: 2N7002-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2N7002-T1-GE3.pdf

Description:: MOSFET N-CH 60V 115MA TO236

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Product details

Overview

2N7002-T1-GE3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET in SOT-23 package, rated for 60 V V_DS, with r_DS(on) ≤ 7.5 Ω at V_GS = 10 V and I_D = 0.115 A, V_GS(th) between 1.0 V and 2.5 V, and C_iss = 22 pF - used for low-power logic-level switching in portable electronics and interface circuits.

For engineers reviewing the 2N7002-T1-GE3 datasheet, 2N7002-T1-GE3 pinout, 2N7002-T1-GE3 application, or 2N7002-T1-GE3 equivalent, this page delivers verified electrical parameters, validated SOT-23 terminal mapping, real-world use cases in battery-powered systems, and two confirmed alternative parts with documented functional differences.

Technical Context

This discrete MOSFET operates as a single-stage voltage-controlled switch with enhancement-mode gate behavior, requiring ≥1.0 V gate drive to initiate conduction and fully turning on at TTL/CMOS-compatible 4.5–10 V levels. Its low input capacitance (22 pF) and fast switching (t_ON/t_OFF ≤ 10 ns) support high-frequency digital control without external buffering.

The device features low leakage: I_DSS ≤ 1 µA at V_DS = 60 V and T_J = 25 °C, and I_GSS ≤ 100 nA at V_GS = 20 V. Thermal resistance R_thJA = 625 °C/W (SOT-23) defines its power handling under natural convection, limiting continuous I_D to 0.115 A at T_A = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports rail-to-rail switching up to 60 V DC without breakdown in standard logic interfaces.
r_DS(on)	≤7.5 Ω @ V_GS = 10 V, I_D = 0.115 A - ensures <1 V drop at 100 mA load, minimizing self-heating in low-current loads.
V_GS(th)	1.0–2.5 V - enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.
C_iss	22 pF - reduces gate drive energy and propagation delay in high-speed digital switching applications.
t_ON/t_OFF	≤10 ns @ V_DD = 15 V, R_L = 25 Ω - supports >10 MHz toggle rates in pulse-width modulation and data line gating.
P_D	0.35 W @ T_A = 25 °C - defines maximum steady-state dissipation before thermal derating begins in SOT-23 footprint.
R_thJA	625 °C/W - indicates thermal bottleneck is ambient convection; PCB copper area directly impacts safe operating current.

Pinout & Package

SOT-23 (TO-236) plastic surface-mount package with gull-wing leads, 1.3 mm pitch, 2.9 mm × 1.3 mm body size, and JEDEC-standard thermal pad layout.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; accepts logic-level voltage (≥1.0 V) to modulate channel conductivity; high-impedance input (I_GSS ≤ 100 nA).
2 (S)	Source	Reference node for gate voltage; tied to system ground or low-side return path; carries full load current.
3 (D)	Drain	Switched output node; connects to load (e.g., LED anode, relay coil); sustains up to 60 V when off.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced from 3.3 V or 5 V MCU GPIOs - eliminates need for gate driver ICs in low-power control paths.
Low input capacitance	22 pF C_iss minimizes gate charge (Q_g ≈ 0.5 nC), reducing switching loss and enabling clean edges at >10 MHz.
Fast switching speed	7–10 ns turn-on/turn-off times allow precise timing control in PWM dimming, data line isolation, and burst-mode circuits.
Low leakage performance	I_DSS ≤ 1 µA at 60 V ensures minimal standby current in always-on battery circuits (e.g., RTC backup switches).
JEDEC-compliant SOT-23	Standard footprint enables drop-in replacement across multiple vendors and compatibility with automated pick-and-place assembly.

Applications

LED Indicator Control	Microcontroller I/O Expansion
Use Scenario: Driving status LEDs from 3.3 V or 5 V MCU GPIO pins with current limiting resistors. IC Role / Device Role / Timing Role: Low-side switch that sinks LED current when gate is high; acts as digital output extender. Use Value: Eliminates need for discrete BJT buffers; enables direct GPIO control of up to 100 mA loads with <1 V saturation drop.	Use Scenario: Adding extra digital outputs to resource-constrained MCUs via parallel GPIO expansion. IC Role / Device Role / Timing Role: Signal-level translator and current amplifier for driving higher-capacitance loads (e.g., LCD segments, optocoupler inputs). Use Value: Supports >10 MHz toggle rates, preserving signal integrity in synchronous bus gating and address decoding.
Battery-Powered Sensor Interface	Low-Voltage Relay/Solenoid Driver
Use Scenario: Enabling/disabling analog sensor supply rails in ultra-low-power IoT nodes during sleep/wake cycles. IC Role / Device Role / Timing Role: Power-gating switch placed between battery and sensor V_CC; controlled by MCU wake-up signal. Use Value: I_DSS ≤ 1 µA prevents measurable battery drain during 10+ year shelf life requirements.	Use Scenario: Driving 5 V or 12 V relays or solenoids from 3.3 V microcontroller outputs in industrial control modules. IC Role / Device Role / Timing Role: Low-side actuator driver; handles inductive kickback via integrated body diode or external flyback diode. Use Value: r_DS(on) ≤ 7.5 Ω limits power loss to <75 mW at 100 mA, avoiding thermal shutdown in sealed enclosures.

LED Indicator Control

Microcontroller I/O Expansion

Use Scenario: Driving status LEDs from 3.3 V or 5 V MCU GPIO pins with current limiting resistors.

IC Role / Device Role / Timing Role: Low-side switch that sinks LED current when gate is high; acts as digital output extender.

Use Value: Eliminates need for discrete BJT buffers; enables direct GPIO control of up to 100 mA loads with <1 V saturation drop.

Use Scenario: Adding extra digital outputs to resource-constrained MCUs via parallel GPIO expansion.

IC Role / Device Role / Timing Role: Signal-level translator and current amplifier for driving higher-capacitance loads (e.g., LCD segments, optocoupler inputs).

Use Value: Supports >10 MHz toggle rates, preserving signal integrity in synchronous bus gating and address decoding.

Battery-Powered Sensor Interface

Low-Voltage Relay/Solenoid Driver

Use Scenario: Enabling/disabling analog sensor supply rails in ultra-low-power IoT nodes during sleep/wake cycles.

IC Role / Device Role / Timing Role: Power-gating switch placed between battery and sensor V_CC; controlled by MCU wake-up signal.

Use Value: I_DSS ≤ 1 µA prevents measurable battery drain during 10+ year shelf life requirements.

Use Scenario: Driving 5 V or 12 V relays or solenoids from 3.3 V microcontroller outputs in industrial control modules.

IC Role / Device Role / Timing Role: Low-side actuator driver; handles inductive kickback via integrated body diode or external flyback diode.

Use Value: r_DS(on) ≤ 7.5 Ω limits power loss to <75 mW at 100 mA, avoiding thermal shutdown in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	r_DS(on) = 3.5 Ω @ V_GS = 4.5 V; C_iss = 30 pF; SOT-23 package; V_DS = 20 V	Lower voltage rating limits use to ≤20 V systems; better conduction efficiency below 5 V gate drive.	Select when driving sub-5 V loads where lower on-resistance outweighs reduced voltage margin.
BS170	r_DS(on) = 5.0 Ω @ V_GS = 10 V; I_D = 0.5 A; TO-92 package; same V_DS = 60 V	Larger through-hole package; higher current capability but slower switching (t_ON/t_OFF ~20 ns) and larger board footprint.	Select for prototyping or legacy through-hole designs requiring higher continuous current than 2N7002-T1-GE3 supports.

Compared with DMN2004LK-7 and BS170, the 2N7002-T1-GE3 provides optimal balance of 60 V rating, SOT-23 compactness, and logic-level compatibility - making it preferred for space-constrained, battery-operated 3.3/5 V systems requiring reliable low-leakage switching.

Availability

2N7002-T1-GE3 is available at Aetrix Electronics and suitable for LED indicator control, microcontroller I/O expansion, and battery-powered sensor interface applications requiring stable component supply across production lifecycles.

Supply support for 2N7002-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power devices, passive components, and sensors, with emphasis on reliability, precision, and high-volume manufacturability.

The 2N7002-T1-GE3 belongs to Vishay's general-purpose logic-level MOSFET product line, engineered for cost-sensitive, low-power digital switching in consumer, computing, and industrial control systems.

FAQ

What is the maximum continuous drain current for the 2N7002-T1-GE3 at room temperature?

The 2N7002-T1-GE3 supports a continuous drain current of 0.115 A at T_A = 25 °C. This value drops to 0.073 A at T_A = 100 °C due to thermal derating. The limit is defined by package thermal resistance (R_thJA = 625 °C/W) and silicon SOA - exceeding it risks junction overheating even with low r_DS(on).

Does the 2N7002-T1-GE3 support direct drive from a 3.3 V microcontroller output?

Yes, the 2N7002-T1-GE3 supports direct drive from 3.3 V microcontrollers: its V_GS(th) range is 1.0–2.5 V, and it achieves r_DS(on) ≤ 13.5 Ω at V_GS = 3.3 V (per datasheet Fig. 11-4). At 3.3 V, it delivers ~80 mA with <0.8 V drop - sufficient for most indicator and interface loads.

What is the gate threshold voltage specification for the 2N7002-T1-GE3?

The gate threshold voltage V_GS(th) for the 2N7002-T1-GE3 is specified as 1.0 V minimum and 2.5 V maximum at I_D = 0.25 mA and V_DS = V_GS. This ensures consistent turn-on behavior across process variation while maintaining noise immunity in mixed-signal environments.

Can the 2N7002-T1-GE3 be used in place of the BS170 in existing designs?

The 2N7002-T1-GE3 is not a direct replacement for the BS170: although both are 60 V N-channel MOSFETs, the BS170 has higher I_D (0.5 A vs. 0.115 A) and lower r_DS(on) (5 Ω vs. 7.5 Ω), but uses TO-92 packaging. Substitution requires verifying thermal margin, layout adaptation (SOT-23 vs. TO-92), and gate drive strength compatibility.

What is the typical input capacitance of the 2N7002-T1-GE3 and how does it affect switching performance?

The 2N7002-T1-GE3 has a typical input capacitance C_iss of 22 pF at V_DS = 25 V. This low value enables fast switching (t_ON/t_OFF ≤ 10 ns) with minimal gate drive current - allowing direct MCU GPIO control without external drivers, especially critical in high-frequency PWM and data-line isolation.

2N7002-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236

2N7002-T1-GE3 FAQ

1.How can I place an order for 2N7002-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002-T1-GE3 reliable?

The price and inventory of 2N7002-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002-T1-GE3 is usually 5 days.

3.What payment methods are accepted for 2N7002-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002-T1-GE3?

2N7002-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002-T1-GE3?

For technical support, including 2N7002-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002-T1-GE3 requirements.

6.How does Aetrix verify that 2N7002-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All 2N7002-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002-T1-GE3 meets industry standards.

7.What is the process for return or replacement of 2N7002-T1-GE3?

All 2N7002-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002-T1-GE3 part is unused and in its original packaging.

Return procedure for 2N7002-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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