My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 3KASMC30AHE3/9AT
- Part No.:
- 3KASMC30AHE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
3KASMC30AHE3/9AT.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,435
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
3KASMC30AHE3/9AT from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor (TVS) diode designed for high-energy surge clamping in automotive and industrial power rails. It delivers 3000 W peak pulse power (10/1000 μs), clamps at 48.4 V under 62.0 A surge current, and operates up to 185 °C junction temperature - enabling robust protection of MOSFETs and ICs against inductive switching transients.
For engineers reviewing the 3KASMC30AHE3/9AT datasheet, 3KASMC30AHE3/9AT pinout, 3KASMC30AHE3/9AT application, or 3KASMC30AHE3/9AT equivalent, this device is selected for high-reliability DC bus protection where AEC-Q101 qualification, MSL Level 1 solderability, and stable clamping performance above 150 °C are required.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for low incremental surge resistance and fast response time (<1 ns), ensuring minimal voltage overshoot during transient events. Its unidirectional polarity and DO-214AB (SMC) package support high-current surge handling while maintaining thermal stability up to TJ = 185 °C.
The device exhibits 1.0 mA test current for breakdown verification, 1.0 μA max reverse leakage at 30 V standoff, and a typical junction-to-lead thermal resistance of 18.3 °C/W - enabling effective heat transfer to PCB copper when mounted per recommended pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (10/1000 μs) | 3000 W - sustains high-energy surges without failure in automotive load-dump or ISO 7637-2 pulse 5a scenarios |
| Stand-off Voltage (VWM) | 30 V - defines maximum continuous reverse operating voltage before significant leakage begins |
| Breakdown Voltage (VBR) | 33.3–36.8 V at 1.0 mA - ensures reliable triggering margin above VWM for stable clamping onset |
| Clamping Voltage (VC) | 48.4 V at 62.0 A IPPM - limits protected circuit voltage during worst-case surge, preserving downstream MOSFETs/ICs |
| Operating Temperature Range | −65 °C to +185 °C - supports under-hood automotive and industrial environments with no derating up to 150 °C |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
| Package | DO-214AB (SMC) - industry-standard surface-mount outline with 7.75 mm × 6.22 mm footprint and matte tin leads |
Pinout & Package
DO-214AB (SMC) package: cathode-indicating band on one end; two-terminal device with anode and cathode leads extending from opposite sides of molded body. Mounting requires minimum 3.20 mm × 1.52 mm pad dimensions per lead, with 4.69 mm maximum center-to-center spacing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to protected circuit ground or low-side return path | Serves as reference node during clamping; must be routed with low-inductance connection to minimize voltage spike |
| Cathode | Current exit point in forward bias; connected to protected line (e.g., 24 V rail, sensor supply) | Carries full surge current during clamping; polarity marking (band) prevents reverse installation in production |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Enables stable leakage performance and long-term reliability under thermal stress and humidity exposure |
| TJ = 185 °C capability | Supports operation in engine control units and power inverters without thermal derating up to rated current |
| MSL Level 1 (260 °C peak) | Permits standard reflow soldering without moisture sensitivity concerns or baking requirements |
| Low incremental surge resistance | Reduces clamping voltage overshoot during fast-rising transients (e.g., ISO 16750-2 pulse 1) |
| 3000 W peak pulse power | Handles repeated 10/1000 μs surges common in 24 V commercial vehicle electrical systems |
Applications
| Automotive Power Rail Protection | Industrial Motor Drive DC Bus |
|---|---|
Use Scenario: Protecting 24 V battery-fed ECUs from load dump and alternator transients per ISO 7637-2. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between power input and ground. Use Value: Limits voltage to ≤48.4 V during 3000 W surges, preventing damage to MCU power supplies and CAN transceivers. |
Use Scenario: Safeguarding IGBT gate drivers and bus capacitors in variable-frequency drives. IC Role / Device Role / Timing Role: High-power transient suppressor across DC link terminals. Use Value: Absorbs inductive kickback energy from contactor switching, reducing risk of overvoltage failure in power stage. |
| Telecom Power Supply Input | Sensor Signal Line Protection |
Use Scenario: Input-stage surge suppression in 48 V telecom rectifiers exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Primary-level TVS on bulk input before DC/DC conversion. Use Value: Withstands 62.0 A peak current at 48.4 V clamp, meeting ITU-T K.20 and IEC 61000-4-5 Level 4 requirements. |
Use Scenario: Reverse-polarity and ESD protection on analog sensor outputs (e.g., pressure, temperature). IC Role / Device Role / Timing Role: Unidirectional clamping element on signal line referenced to local ground. Use Value: Provides <1.0 μA leakage at 30 V, preserving signal integrity while suppressing ±30 kV contact ESD per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A | Lower peak pulse power (400 W), smaller SMA package, 43.5 V clamping at 9.8 A | Suitable only for low-energy surges (e.g., board-level ESD); not rated for automotive load dump | Select when space-constrained and surge energy remains below 100 mJ |
| SMCJ30A | Same DO-214AB package, 3000 W rating, but 48.4 V clamping at 62.0 A - identical electrical specs except marking code and packaging suffix | Functionally interchangeable in circuit; differs only in tape/reel configuration (e.g., SMCJ30AHE3/9AT vs. 3KASMC30AHE3/9AT) | Valid alternative if sourcing flexibility or legacy BOM alignment is required |
Compared with SMAJ30A and SMCJ30A, the 3KASMC30AHE3/9AT provides identical clamping and surge capability to SMCJ30A but with AEC-Q101 validation and tighter process control for automotive use, whereas SMAJ30A lacks both power rating and qualification for high-reliability deployment.
Availability
3KASMC30AHE3/9AT is available at Aetrix Electronics and suitable for automotive power modules, industrial motor controllers, and telecom rectifier designs requiring stable component supply with AEC-Q101 assurance and high-temperature operational integrity.
Supply support for 3KASMC30AHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, thermal performance, and automotive qualification.
The 3KASMC series belongs to Vishay's PAR® TVS platform, engineered specifically for high-energy transient suppression in harsh-environment applications including engine control, battery management, and industrial power conversion.
FAQ
What is the clamping voltage of the 3KASMC30AHE3/9AT under maximum surge conditions?
The 3KASMC30AHE3/9AT clamps at 48.4 V when subjected to its rated peak pulse current of 62.0 A using a 10/1000 μs waveform. This value is measured per Figure 1 in Vishay document 89962 and represents the maximum voltage seen by downstream components during worst-case transient events. The 3KASMC30AHE3/9AT maintains this clamping performance across its full operating temperature range up to 185 °C junction temperature.
Is the 3KASMC30AHE3/9AT suitable for automotive applications?
Yes, the 3KASMC30AHE3/9AT is AEC-Q101 qualified and rated for operation up to 185 °C junction temperature, making it suitable for under-hood automotive applications such as engine control units, body control modules, and ADAS power supplies. Its DO-214AB package meets MSL Level 1, supporting lead-free reflow without preconditioning. The 3KASMC30AHE3/9AT also complies with ISO 7637-2 pulse 5a load-dump immunity requirements when properly implemented.
What is the reverse leakage current specification for the 3KASMC30AHE3/9AT at rated standoff voltage?
The 3KASMC30AHE3/9AT specifies a maximum reverse leakage current of 1.0 μA at its 30 V stand-off voltage (VWM) and 25 °C ambient temperature. At elevated temperatures (TJ = 150 °C), leakage increases to 15 μA - a value confirmed in Table "ELECTRICAL CHARACTERISTICS" of Vishay document 89962. This low leakage ensures minimal power loss and signal interference in always-on automotive and industrial circuits using the 3KASMC30AHE3/9AT.
Does the 3KASMC30AHE3/9AT have unidirectional or bidirectional polarity?
The 3KASMC30AHE3/9AT is a unidirectional TVS diode, as explicitly stated in the "FEATURES" section of Vishay document 89962. It conducts only in reverse breakdown (cathode-to-anode) and blocks forward voltage like a standard rectifier. Polarity is indicated by a cathode band on the DO-214AB package body. The 3KASMC30AHE3/9AT is not rated for bidirectional operation and must be oriented correctly in-circuit to protect against positive-going transients on the cathode side.
What is the thermal resistance from junction to leads for the 3KASMC30AHE3/9AT?
The 3KASMC30AHE3/9AT has a typical junction-to-leads thermal resistance (RθJL) of 18.3 °C/W, as specified in the "THERMAL CHARACTERISTICS" table of Vishay document 89962. This parameter reflects heat conduction efficiency from the silicon die to the soldered leads and is critical for estimating temperature rise under sustained power dissipation. When mounted per Vishay's recommended pad layout, the 3KASMC30AHE3/9AT achieves this RθJL value without additional heatsinking.
3KASMC30AHE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 62A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
3KASMC30AHE3/9AT FAQ
1.How can I place an order for 3KASMC30AHE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for 3KASMC30AHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3KASMC30AHE3/9AT reliable?
The price and inventory of 3KASMC30AHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC30AHE3/9AT is usually 5 days.
3.What payment methods are accepted for 3KASMC30AHE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC30AHE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3KASMC30AHE3/9AT?
3KASMC30AHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3KASMC30AHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3KASMC30AHE3/9AT?
For technical support, including 3KASMC30AHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC30AHE3/9AT requirements.
6.How does Aetrix verify that 3KASMC30AHE3/9AT is sourced from the original manufacturer or authorized distributors?
All 3KASMC30AHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC30AHE3/9AT meets industry standards.
7.What is the process for return or replacement of 3KASMC30AHE3/9AT?
All 3KASMC30AHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC30AHE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3KASMC30AHE3/9AT part is unused and in its original packaging.
Return procedure for 3KASMC30AHE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
3KASMC30AHE3/9AT Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
