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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 3N163

Name: 3N163
Brand: Vishay Siliconix
SKU: 3N163
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 3N163

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-206AF, TO-72-4 Metal Can

Datasheet:: 3N163.pdf

Description:: MOSFET P-CH 40V 50MA TO72

Quantity:: RFQ Add To RFQ list

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Product details

Overview

3N163 from Siliconix is a lateral P-channel enhancement-mode MOSFET designed for ultra-low-leakage analog switching and high-impedance preamplifier applications. It features –40 V drain-source breakdown voltage, –2 to –5 V gate threshold voltage, 250 Ω maximum on-resistance at –20 V V_GS, –5 mA minimum on-state drain current, and 0.7 pF reverse transfer capacitance. It operates in smoke detectors and electrometers where sub-picoampere input leakage is critical.

For engineers reviewing the 3N163 datasheet, 3N163 pinout, 3N163 application, or 3N163 equivalent, key selection criteria include ultra-low IGSS (<0.02 pA typ), high V_GSS rating (125 V), normally-off operation, TO-206AF hermetic packaging, and low Crss for high-speed analog switching integrity.

Technical Context

The 3N163 employs a lateral P-channel structure with enhancement-mode operation, requiring negative gate bias to conduct. Its high gate-body breakdown voltage (125 V) and ultra-low gate leakage (<0.02 pA typ at 25°C) enable stable DC-coupled amplifier front-ends and ESD-tolerant analog switches.

Designed for minimal parasitic capacitance, it delivers Crss = 0.7 pF and Ciss = 2.4 pF at V_GS = –15 V, supporting fast switching (t_on = 18 ns typ) without compromising high-impedance isolation-critical in electrometer-grade signal conditioning paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS Min	–40 V: Ensures safe operation with up to 40 V reverse drain-source potential before avalanche conduction.
V_GS(th)	–2 to –5 V: Gate must be driven ≤ –2 V to reliably turn on; wide threshold range supports robust biasing across temperature.
r_DS(on) Max	250 Ω at V_GS = –20 V: Defines worst-case on-resistance for analog switch R_ON error and channel heating at –100 µA signal levels.
I_D(on) Min	–5 mA at V_DS = –15 V, V_GS = –10 V: Confirms usable conduction capability for low-current preamp load driving.
C_rss Max	0.7 pF: Limits feedthrough coupling in high-gain analog switches, preserving signal integrity in µV-level inputs.
I_GSS Typ	0.02 pA at 25°C: Enables femtoampere-level input bias current in electrometer circuits without guard-ring compensation.
P_D Max	375 mW at 25°C: Sets thermal limit for continuous operation; derates 3 mW/°C above ambient.

Pinout & Package

3N163 is housed in a hermetic TO-206AF (TO-72) metal-can package with axial leads, qualified for military processing per MIL-STD-19500. The package provides high reliability, low moisture ingress, and stable parametric performance over –55°C to +150°C junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current-carrying terminal (P-channel bulk)	Connected to high-side negative rail in analog switches; requires voltage rating ≥ \|V_(BR)DSS\| = 40 V.
2 (Gate)	Control electrode with ultra-high impedance	Accepts negative bias only; <0.02 pA leakage enables direct connection to floating sensor nodes.
3 (Source)	Reference terminal for gate drive and current return	Biased more positive than drain; defines V_GS polarity and sets conduction direction in P-channel topology.
4 (Case/Substrate)	Internally connected to source	Provides mechanical mounting and thermal path; electrically tied to source-must be referenced accordingly in layout.

Key Features

Feature	Design Value
Ultra-low input leakage	0.02 pA typical gate leakage enables femtoampere-level input bias current in electrometer front-ends.
High gate breakdown voltage	125 V V_GSS rating allows safe handling and operation in high-voltage sensor interfaces without gate oxide rupture.
Normally-off operation	Enhancement-mode behavior ensures zero conduction at V_GS = 0 V-eliminates need for active pull-down in standby states.
Low Crss and Ciss	0.7 pF Crss and 2.4 pF Ciss minimize capacitive feedthrough and loading in high-frequency analog switch paths.
Hermetic TO-206AF package	MIL-qualified metal-can construction ensures long-term parameter stability and immunity to humidity-induced leakage drift.

Applications

Smoke Detectors	Electrometers
Use Scenario: Ionization chamber current sensing in residential and commercial fire alarms. IC Role / Device Role / Timing Role: Analog switch isolating ultra-low-current ion current (fA–pA range) from amplifier input stage. Use Value: 0.02 pA I_GSS prevents false triggering by minimizing leakage-induced offset in high-impedance node.	Use Scenario: Input stage of laboratory-grade electrometers measuring charge accumulation on insulated surfaces. IC Role / Device Role / Timing Role: High-impedance buffer/gate driver enabling direct connection to guarded input terminals. Use Value: 125 V gate breakdown and hermetic TO-206AF package ensure stable fA-level measurement over decades of field use.
Analog Switching	Digital Switching
Use Scenario: Multiplexing low-level sensor signals (thermocouples, photodiodes) in data acquisition systems. IC Role / Device Role / Timing Role: Low-capacitance, low-leakage transmission gate in precision analog signal routing. Use Value: 0.7 pF Crss and 250 Ω r_DS(on) preserve signal fidelity and settling time in µV-resolution measurements.	Use Scenario: Level-shifting and isolation in low-power digital control logic interfacing with high-voltage subsystems. IC Role / Device Role / Timing Role: Normally-off P-channel switch enabling fail-safe open-circuit default state. Use Value: –40 V V_(BR)DSS and –50 mA I_D rating support reliable 24 V industrial control signal routing.

Smoke Detectors

Electrometers

Use Scenario: Ionization chamber current sensing in residential and commercial fire alarms.

IC Role / Device Role / Timing Role: Analog switch isolating ultra-low-current ion current (fA–pA range) from amplifier input stage.

Use Value: 0.02 pA I_GSS prevents false triggering by minimizing leakage-induced offset in high-impedance node.

Use Scenario: Input stage of laboratory-grade electrometers measuring charge accumulation on insulated surfaces.

IC Role / Device Role / Timing Role: High-impedance buffer/gate driver enabling direct connection to guarded input terminals.

Use Value: 125 V gate breakdown and hermetic TO-206AF package ensure stable fA-level measurement over decades of field use.

Analog Switching

Digital Switching

Use Scenario: Multiplexing low-level sensor signals (thermocouples, photodiodes) in data acquisition systems.

IC Role / Device Role / Timing Role: Low-capacitance, low-leakage transmission gate in precision analog signal routing.

Use Value: 0.7 pF Crss and 250 Ω r_DS(on) preserve signal fidelity and settling time in µV-resolution measurements.

Use Scenario: Level-shifting and isolation in low-power digital control logic interfacing with high-voltage subsystems.

IC Role / Device Role / Timing Role: Normally-off P-channel switch enabling fail-safe open-circuit default state.

Use Value: –40 V V_(BR)DSS and –50 mA I_D rating support reliable 24 V industrial control signal routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel enhancement-mode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
3N164	Lower V_(BR)DSS (–30 V), higher r_DS(on) (300 Ω), lower I_D(on) (–3 mA)	Suitable for ≤30 V systems with relaxed on-resistance requirements; not interchangeable where –40 V rating is mandatory.	Select 3N164 only if voltage margin and power dissipation allow reduced breakdown and higher channel resistance.
2N7002P	Surface-mount SOT-23, V_(BR)DSS = –60 V, r_DS(on) = 2.5 Ω @ –4.5 V, but I_GSS = 100 pA (5000× higher than 3N163)	Not suitable for femtoampere electrometer inputs; acceptable for general-purpose low-voltage switching where leakage is non-critical.	Choose 2N7002P only for cost-sensitive, space-constrained PCBs where ultra-low leakage is not required.

Compared with 3N163, 3N164 trades voltage rating and on-resistance for identical package and leakage performance, while 2N7002P offers modern packaging and lower r_DS(on) but sacrifices six orders of magnitude in gate leakage-making it unsuitable for precision analog front-ends.

Availability

3N163 is available at Aetrix Electronics and suitable for smoke detectors, electrometers, analog switching, and digital switching applications requiring stable component supply, long-lifecycle availability, and hermetic reliability.

Supply support for 3N163 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Siliconix, acquired by Vishay in 1998, pioneered high-reliability discrete semiconductors with emphasis on precision analog and power devices.

The 3N163 belongs to Siliconix's lateral MOSFET product line, engineered specifically for ultra-low-leakage, high-impedance signal-path applications including scientific instrumentation and life-safety sensors.

FAQ

What is the maximum drain-source voltage rating for the 3N163?

The 3N163 has a minimum drain-source breakdown voltage V_(BR)DSS of –40 V at I_D = –10 µA. This rating ensures safe operation under reverse-bias conditions up to 40 V magnitude. Absolute maximum continuous rating is –40 V; exceeding this risks avalanche conduction and permanent degradation. Derating is not specified beyond standard thermal limits.

Does the 3N163 require a negative gate voltage to operate?

Yes, the 3N163 is a P-channel enhancement-mode MOSFET and requires a negative gate-to-source voltage (V_GS) relative to the source to conduct. Its gate threshold voltage ranges from –2 V to –5 V, meaning V_GS ≤ –2 V is necessary to achieve measurable drain current. At V_GS = 0 V, the device remains fully off-confirming its normally-off behavior.

What is the typical gate leakage current of the 3N163 at room temperature?

The typical gate-body leakage current (I_GSS) of the 3N163 is 0.02 pA at 25°C and V_GS = –30 V. This ultra-low value is critical for electrometer and high-impedance sensor applications. At 125°C, I_GSS rises to –1 pA-still within femtoampere range-ensuring stable performance across extended temperature operation.

Is the 3N163 available in surface-mount packaging?

No, the 3N163 is exclusively offered in the through-hole hermetic TO-206AF (TO-72) metal-can package. There is no SMT variant documented in the original Siliconix P-37404 datasheet or Vishay cross-reference. Designers requiring surface-mount alternatives should evaluate functionally similar but leakage-compromised parts like 2N7002P-with awareness of its 100 pA I_GSS.

Can the 3N163 be used as a replacement for the 3N164?

The 3N163 and 3N164 share identical pinout, package, and gate characteristics but differ in voltage and resistance ratings: 3N163 offers –40 V V_(BR)DSS and 250 Ω r_DS(on), while 3N164 is rated –30 V and 300 Ω. Substitution is possible only if system voltage stays below 30 V and higher on-resistance is acceptable; otherwise, 3N163 provides superior margin and lower conduction loss.

3N163 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-206AF, TO-72-4 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 20V

Rds On (Max) @ Id, Vgs:: 250Ohm @ 100µA, 20V

Vgs(th) (Max) @ Id:: 5V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3.5 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 375mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-72

3N163 FAQ

1.How can I place an order for 3N163 through Aetrix?

Please submit a Request for Quotation (RFQ) for 3N163 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 3N163 reliable?

The price and inventory of 3N163 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3N163 is usually 5 days.

3.What payment methods are accepted for 3N163?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3N163 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 3N163?

3N163 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 3N163 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 3N163?

For technical support, including 3N163 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3N163 requirements.

6.How does Aetrix verify that 3N163 is sourced from the original manufacturer or authorized distributors?

All 3N163 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3N163 meets industry standards.

7.What is the process for return or replacement of 3N163?

All 3N163 units undergo pre-shipment inspection (PSI). If there is an issue with 3N163, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 3N163 part is unused and in its original packaging.

Return procedure for 3N163:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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