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Vishay Siliconix 3N163-E3
- Part No.:
- 3N163-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-206AF, TO-72-4 Metal Can
- Datasheet:
-
3N163-E3.pdf
- Description:
- MOSFET P-CH 40V 50MA TO72
- Quantity:
- Payment:
- Shipping:
Inventory:7,609
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Product details
Overview
3N163-E3 from Vishay (formerly Siliconix) is a P-channel enhancement-mode MOSFET designed for ultra-low-leakage analog switching and high-impedance preamplifier circuits, featuring –40 V V(BR)DSS, –2 to –5 V VGS(th), 250 Ω rDS(on) max, –5 mA ID(on) at –15 V, and 0.7 pF Crss - deployed in smoke detectors and electrometers where gate leakage below 0.02 pA typ. is critical.
For engineers reviewing the 3N163-E3 datasheet, 3N163-E3 pinout, 3N163-E3 application, or 3N163-E3 equivalent, this page delivers verified electrical parameters, TO-206AF package details, real-world use cases in precision sensing, and two validated alternative parts with documented differences in breakdown voltage and on-resistance.
Technical Context
The 3N163-E3 is a lateral P-channel MOSFET with normally-off operation, optimized for low-capacitance analog signal routing. Its ultra-low input leakage (0.02 pA typ.) and high gate-body breakdown (125 V) enable stable DC-coupled amplifier front-ends without bias drift.
It operates with zero-gate-voltage drain current (IDSS) of –8 nA at 25°C and –20 nA at 125°C, and exhibits temperature-stable switching times (td(on) = 12 ns, td(off) = 50 ns) due to independence from junction temperature per datasheet note e.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS Min | –40 V: Ensures safe blocking of up to –40 V drain-source voltage before avalanche conduction begins. |
| VGS(th) | –2 to –5 V: Threshold range defines minimum negative gate voltage required to initiate conduction; enables precise turn-on control in high-impedance bias networks. |
| rDS(on) Max | 250 Ω at VGS = –20 V, ID = –100 µA: Limits on-state voltage drop in low-current analog switch paths, preserving signal integrity. |
| ID(on) Min | –5 mA at VDS = –15 V, VGS = –10 V: Confirms usable drive capability for sensor interface loads without external gain staging. |
| Crss Max | 0.7 pF: Reverse transfer capacitance restricts Miller effect, supporting >10 MHz small-signal bandwidth in unity-gain buffer configurations. |
| IGSS Max | <–1 pA at VGS = –30 V, 25°C: Ultra-low gate leakage preserves charge in electrometer integrators over multi-second time constants. |
| Power Dissipation | 375 mW at TA = 25°C, derated 3 mW/°C above: Sets thermal boundary for continuous operation in hermetic TO-206AF package. |
Pinout & Package
3N163-E3 is housed in a hermetic TO-206AF (TO-72) metal-can package with axial leads, qualified for military processing per MIL-STD standards. The case serves as the source terminal, enabling grounded-source configurations with minimal parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Top View, Left) | Drain (D) | High-impedance output node; connected to load or feedback path in amplifier applications. |
| 2 (Top View, Center) | Gate (G) | Ultra-high-impedance control input; requires ESD-safe handling and guarded PCB traces. |
| 3 (Top View, Right) | Source (S) | Common reference terminal; electrically tied to metal case for shielding and thermal conduction. |
| Case | Source (S) | Provides mechanical mounting, electromagnetic shielding, and thermal dissipation path to heatsink or PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low input leakage | 0.02 pA typical gate leakage enables >10⁹ Ω effective input resistance in electrometer front-ends. |
| High gate-body breakdown | 125 V rating prevents gate oxide rupture during ESD events or transient overvoltage exposure. |
| Normally-off operation | Ensures fail-safe open-circuit state at power-up or gate float, eliminating unintended conduction in safety-critical sensors. |
| Lateral MOSFET structure | Delivers low Crss (0.7 pF) and stable gfs (2.7 mS typ.), supporting wideband analog switching up to 10 MHz. |
| Hermetic TO-206AF package | Provides moisture- and particle-resistant sealing for long-term reliability in fire alarm and industrial environmental monitoring systems. |
Applications
| Smoke Detectors | Electrometers |
|---|---|
Use Scenario: Ionization chamber current sensing in residential and commercial fire alarms. IC Role / Device Role / Timing Role: Analog switch isolating chamber current from op-amp input while maintaining sub-picoamp integrity. Use Value: 0.02 pA IGSS ensures <1% error in 100 fA–10 pA chamber current measurement over 10-year field life. | Use Scenario: Input stage of laboratory-grade charge amplifiers measuring static charge or radiation-induced currents. IC Role / Device Role / Timing Role: High-impedance buffer between sensing electrode and integrating capacitor. Use Value: 125 V VGS(max) and 250 Ω rDS(on) allow direct coupling to ±10 V bias rails without gate protection diodes or series resistors. |
| Analog Switching | Digital Switching |
Use Scenario: Multiplexing low-level sensor signals (thermocouples, pH electrodes) in data acquisition systems. IC Role / Device Role / Timing Role: Low-charge-injection, low-Crss switch enabling <0.01% crosstalk at 1 kHz. Use Value: 0.7 pF Crss and 12 ns td(on) support 100 kSPS multiplexed sampling with <1 LSB settling error in 16-bit systems. | Use Scenario: Level-shifting logic control signals between isolated domains in programmable logic controllers. IC Role / Device Role / Timing Role: P-channel pass transistor enabling bidirectional signal isolation with no DC path. Use Value: –40 V V(BR)DSS and –5 mA ID(on) support reliable 24 VDC control line switching with <100 ns propagation delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel enhancement-mode MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 3N164-E3 | V(BR)DSS = –30 V (vs. –40 V); rDS(on) = 300 Ω (vs. 250 Ω); ID(on) = –3 mA (vs. –5 mA) | Lower voltage rating limits use in 36 V systems; higher on-resistance increases voltage drop in analog switches. | Select only when lower V(BR)DSS suffices and tighter Crss tolerance is not required. |
| 2N7002P | V(BR)DSS = –60 V; rDS(on) = 3.5 Ω @ VGS = –10 V; IGSS = –100 pA max (vs. –1 pA) | Higher leakage invalidates electrometer use; superior on-resistance benefits digital switching but adds cost. | Prefer for 24 V logic-level switching where leakage >100 pA is acceptable; avoid in sub-pA sensing. |
Compared with 3N163-E3, 3N164-E3 trades voltage headroom and drive strength for identical ultra-low leakage, while 2N7002P offers higher breakdown and lower rDS(on) at the expense of 10,000× higher gate leakage - making it unsuitable for precision analog but viable for general-purpose digital switching.
Availability
3N163-E3 is available at Aetrix Electronics and suitable for smoke detectors, electrometers, analog switching, and digital switching requiring stable component supply across extended product lifecycles.
Supply support for 3N163-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, specializing in high-reliability, precision, and power-efficient devices for industrial, automotive, and sensing applications.
The 3N163-E3 belongs to Vishay's legacy Siliconix lateral MOSFET product line, engineered specifically for ultra-low-leakage analog signal conditioning and high-impedance sensor interfacing in safety-critical and metrology-grade equipment.
FAQ
What is the maximum gate-source voltage rating for the 3N163-E3?
The 3N163-E3 has a maximum gate-source voltage rating of –40 V under DC conditions and a guaranteed gate-body breakdown voltage of 125 V. This high rating protects against ESD damage and allows safe operation with ±15 V or ±24 V gate drive supplies. Exceeding –40 V VGS risks irreversible gate oxide degradation, even if VGS(th) falls within –2 to –5 V. Always limit gate drive with clamping diodes or Zener references when using the 3N163-E3 in high-transient environments.
Does the 3N163-E3 require external gate protection in electrometer circuits?
The 3N163-E3 does not require external gate protection diodes in properly designed electrometer circuits due to its intrinsic 125 V gate-body breakdown and ultra-low 0.02 pA leakage. However, guarding the gate trace, using low-noise PCB layout practices, and avoiding floating inputs remain essential. External protection may be added only if system-level transients exceed 125 V - a rare condition in battery-powered or isolated sensor nodes where the 3N163-E3 is typically deployed.
How does temperature affect the 3N163-E3's zero-gate-voltage drain current (IDSS)?
The 3N163-E3's IDSS increases with temperature: from –8 nA at 25°C to –20 nA at 125°C. This 2.5× rise reflects thermally activated minority-carrier generation in the depletion region and must be accounted for in long-integration-time electrometers. For example, a 10-second integration will accumulate ~200 fC of leakage-induced error at 125°C versus ~80 fC at 25°C - a critical factor in Class A fire alarm certification testing.
Can the 3N163-E3 be used as a replacement for the 3N164-E3?
The 3N163-E3 can replace the 3N164-E3 in applications requiring higher voltage blocking (–40 V vs. –30 V) and lower on-resistance (250 Ω vs. 300 Ω), but not vice versa. Substituting 3N164-E3 for 3N163-E3 risks overvoltage failure in 36 V systems and increased signal loss in analog switches. Both share identical pinout, package, and ultra-low leakage, so PCB layout remains unchanged - however, circuit validation under worst-case V(BR)DSS and rDS(on) conditions is mandatory before interchange.
What is the significance of the TO-206AF (TO-72) package for the 3N163-E3?
The TO-206AF package provides hermetic metal-can sealing, enabling the 3N163-E3 to maintain sub-picoamp leakage stability over decades in humid or corrosive environments like HVAC ducts or industrial enclosures. Its case-as-source construction simplifies grounding, reduces stray capacitance, and improves thermal coupling to heatsinks. Unlike plastic packages, TO-206AF meets MIL-STD-883 requirements for burn-in and long-term parameter stability - a key reason it remains specified in UL-listed smoke detector designs.
3N163-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-206AF, TO-72-4 Metal Can
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 20V
- Rds On (Max) @ Id, Vgs:
- 250Ohm @ 100µA, 20V
- Vgs(th) (Max) @ Id:
- 5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3.5 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-72
3N163-E3 FAQ
1.How can I place an order for 3N163-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for 3N163-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3N163-E3 reliable?
The price and inventory of 3N163-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3N163-E3 is usually 5 days.
3.What payment methods are accepted for 3N163-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3N163-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3N163-E3?
3N163-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3N163-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3N163-E3?
For technical support, including 3N163-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3N163-E3 requirements.
6.How does Aetrix verify that 3N163-E3 is sourced from the original manufacturer or authorized distributors?
All 3N163-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3N163-E3 meets industry standards.
7.What is the process for return or replacement of 3N163-E3?
All 3N163-E3 units undergo pre-shipment inspection (PSI). If there is an issue with 3N163-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3N163-E3 part is unused and in its original packaging.
Return procedure for 3N163-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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