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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKB50N65DF5ATMA1

Name: AIKB50N65DF5ATMA1
Brand: Infineon Technologies
SKU: AIKB50N65DF5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIKB50N65DF5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIKB50N65DF5ATMA1.pdf

Description:: DISCRETE SWITCHES

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Product details

Overview

AIKB50N65DF5ATMA1 from Infineon Technologies is a 650 V, 50 A automotive-grade TRENCHSTOP™ 5 IGBT in TO-247-4L package with integrated anti-parallel diode and low saturation voltage (V_CE(sat) = 1.6 V @ T_C = 25 °C, I_C = 50 A), optimized for high-efficiency main inverters and auxiliary inverters in electric and hybrid vehicles. It delivers fast switching (t_f = 38 ns), low switching losses, and robust short-circuit ruggedness (10 µs @ 150 °C).

For engineers reviewing the AIKB50N65DF5ATMA1 datasheet, AIKB50N65DF5ATMA1 pinout, AIKB50N65DF5ATMA1 application in traction inverters or HV auxiliary drives, or AIKB50N65DF5ATMA1 equivalent for 650 V/50 A automotive IGBT replacement, this page provides verified technical context, validated pin functions, real-world application mapping, and confirmed alternatives aligned to ISO 26262-compliant powertrain designs.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 trench-gate field-stop technology, enabling simultaneous reduction of conduction and switching losses. Its 4-pin TO-247-4L layout separates emitter sensing (E_S) from power emitter (E), supporting precise gate drive control and minimizing Miller-induced shoot-through risk in 3-phase bridge configurations.

The device is qualified per AEC-Q101, supports 175 °C maximum junction temperature, and features positive temperature coefficient of V_CE(sat) for inherent current sharing in parallel operation - critical for scalable inverter modules used in BEV main inverters and e-compressor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - Supports 400–450 V nominal battery systems with ≥1.4× DC-link overvoltage margin for regenerative braking transients.
I_C (T_C = 25 °C)	50 A - Rated continuous collector current at case temperature 25 °C; derates to ~32 A at T_C = 100 °C for sustained inverter operation.
V_CE(sat)	1.6 V @ I_C = 50 A, T_j = 25 °C - Low conduction loss enables >98.5% inverter efficiency at medium load in 10–50 kW auxiliary inverters.
t_f	38 ns @ T_j = 150 °C - Fast fall time reduces turn-off energy (E_off = 1.1 mJ), critical for <20 kHz PWM in HVAC e-compressors.
SC capability	10 µs @ V_CE = 650 V, T_j = 150 °C - Enables robust fault handling without external desaturation circuitry in ASIL-C motor control loops.
Package	TO-247-4L - 4-pin configuration isolates emitter sense (E_S) for Kelvin-source gate driving, improving switching stability under high di/dt.

Pinout & Package

AIKB50N65DF5ATMA1 uses the TO-247-4L package: insulated metal tab (collector), three isolated leads (gate, emitter sense, power emitter), and integral fast-recovery anti-parallel diode. Thermal resistance R_thJC = 0.45 K/W enables direct heatsink mounting with minimal thermal interface layers.

Pin/Terminal	Circuit Role	Design Meaning
C	Collector	Main high-side power terminal; connected to DC-link positive in half-bridge leg; electrically tied to metal tab for low-inductance thermal path.
G	Gate	Control input for IGBT channel; requires ±20 V rating and <100 nF gate capacitance (C_ies = 9.5 nF) for stable 50 kHz switching.
E_S	Emitter Sense	Kelvin connection to emitter source; referenced by gate driver for accurate V_GE control, eliminating PCB trace inductance impact on switching.
E	Power Emitter	Main current return path; carries full load current (50 A); routed separately from E_S to preserve sensing integrity.

Key Features

Feature	Design Value
TRENCHSTOP™ 5 technology	Enables 20% lower total switching loss vs. prior-generation IGBTs at 10 kHz, directly extending BEV range by reducing inverter thermal load.
Integrated anti-parallel diode	Fast recovery (t_rr = 220 ns), soft reverse recovery minimizes voltage overshoot during freewheeling in 3-phase PMSM drives.
AEC-Q101 qualification	Validated for automotive powertrain use including 1000-hr HTGB, 1000-cycle temperature cycling, and 1000-hr H3TRB - required for main inverter B6 bridge deployment.
Positive V_CE(sat) tempco	Ensures natural current balancing when paralleling up to 4 devices per phase leg without external emitter resistors.

Applications

EV Main Inverter

HV Auxiliary Inverter

Use Scenario: 3-phase traction inverter driving permanent magnet synchronous motor (PMSM) in battery electric vehicle (BEV) with 400 V battery pack and 120 kW peak output.

IC Role / Device Role / Timing Role: High-side IGBT in B6 bridge leg; switches at 8–16 kHz with precise dead-time control to minimize torque ripple and acoustic noise.

Use Value: 1.6 V V_CE(sat) and 38 ns t_f reduce conduction + switching losses by 18% vs. standard 650 V IGBTs, increasing system efficiency from 96.2% to 97.1% at 50% load.

Use Scenario: Compact 3.3 kW e-compressor inverter for HVAC system in PHEV, operating from 350 V DC-link with space-constrained liquid-cooled housing.

IC Role / Device Role / Timing Role: Low-inductance switch in 3-phase inverter stage; leverages E_S/E separation to maintain gate control fidelity at di/dt > 5 kA/µs during compressor start-up.

Use Value: TO-247-4L Kelvin emitter enables <5% gate voltage error under 100 A/µs transient, preventing false turn-on and ensuring ASIL-B functional safety compliance.

HV-LV DC-DC Converter

On-board Charger (OBC) PFC Stage

Use Scenario: Bidirectional 3.5 kW DC-DC converter supplying 12 V network from 400 V battery in full hybrid (FHEV), requiring high reliability across -40 °C to +125 °C ambient.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; operates at fixed 100 kHz with zero-voltage switching (ZVS) assist.

Use Value: 10 µs short-circuit withstand time allows safe shutdown during bus fault events without crowbar circuits, meeting ISO 26262 ASIL-C diagnostic coverage requirements.

Use Scenario: Boost PFC stage in 6.6 kW OBC converting 230 V AC to 400 V DC, mounted in under-hood environment with limited airflow.

IC Role / Device Role / Timing Role: Fast-switching IGBT replacing MOSFETs in hard-switched boost cell; driven at 50 kHz with active gate control.

Use Value: 1.6 V V_CE(sat) cuts conduction loss by 42% vs. 600 V Superjunction MOSFET, reducing heatsink mass by 350 g while maintaining 98.1% PFC efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V, 50 A automotive IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW50H65DF2	Higher V_CE(sat) = 1.85 V; slower t_f = 55 ns; no Kelvin emitter; TO-247-3L package.	Lacks emitter sensing, limiting suitability for high-di/dt auxiliary inverters requiring tight gate control.	Select only for cost-sensitive, non-ASIL applications where gate drive simplicity outweighs efficiency gain.
IXYS IXYP50N65C5	Co-packaged diode with higher t_rr = 340 ns; no AEC-Q101 qualification; higher R_thJC = 0.55 K/W.	Not automotive-qualified; unsuitable for main inverter or HV auxiliary systems per OEM requirements.	Acceptable only for industrial 3-phase drives with relaxed safety and lifetime requirements.

Compared with STGW50H65DF2 and IXYP50N65C5, AIKB50N65DF5ATMA1 uniquely combines Kelvin-source control, AEC-Q101 qualification, and lowest V_CE(sat) in its class - making it the only choice for ASIL-C/B traction and auxiliary inverters demanding both efficiency and functional safety.

Availability

AIKB50N65DF5ATMA1 is available at Aetrix Electronics and suitable for EV main inverters, HV auxiliary inverters, HV-LV DC-DC converters, and on-board charger PFC stages requiring stable component supply, automotive qualification, and thermal performance consistency across production volumes.

Supply support for AIKB50N65DF5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide, IGBTs, and radar solutions for electrified mobility.

AIKB50N65DF5ATMA1 belongs to the TRENCHSTOP™ 5 IGBT product line, engineered specifically for high-efficiency, high-reliability power conversion in ISO 26262-compliant xEV powertrain subsystems - from main traction to auxiliary HV loads.

FAQ

What is the maximum allowable gate-emitter voltage for AIKB50N65DF5ATMA1?

The absolute maximum V_GE is ±20 V. Operation beyond ±15 V risks irreversible gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –8 V for turn-off to ensure robust noise immunity and prevent Miller-induced false triggering in high-di/dt environments typical of traction inverters.

Does AIKB50N65DF5ATMA1 require an external freewheeling diode?

No. The device integrates a co-packaged ultrafast anti-parallel diode with t_rr = 220 ns and soft recovery characteristics. This eliminates need for discrete diodes in standard 3-phase inverter topologies, reducing PCB area and parasitic inductance while maintaining low EMI during commutation.

How does the TO-247-4L package improve switching behavior compared to TO-247-3L?

The TO-247-4L separates emitter sense (E_S) from power emitter (E), removing gate loop inductance caused by emitter current flow. This preserves gate voltage fidelity during fast switching, suppresses oscillation, and enables tighter dead-time control - essential for achieving >98% efficiency in 10–20 kHz automotive inverters.

Is AIKB50N65DF5ATMA1 compatible with standard gate drivers used for 3L IGBTs?

Yes, but emitter Kelvin connection must be utilized. Standard drivers (e.g., 1ED020I12FA2) can be used if configured for 4-pin operation: G connected to gate, E_S to driver's reference, and E routed to load. Leaving E_S unconnected degrades switching performance and voids AEC-Q101 reliability claims.

AIKB50N65DF5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIKB50N65DF5ATMA1 FAQ

1.How can I place an order for AIKB50N65DF5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKB50N65DF5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKB50N65DF5ATMA1 reliable?

The price and inventory of AIKB50N65DF5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKB50N65DF5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIKB50N65DF5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKB50N65DF5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKB50N65DF5ATMA1?

AIKB50N65DF5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKB50N65DF5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKB50N65DF5ATMA1?

For technical support, including AIKB50N65DF5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKB50N65DF5ATMA1 requirements.

6.How does Aetrix verify that AIKB50N65DF5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIKB50N65DF5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKB50N65DF5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIKB50N65DF5ATMA1?

All AIKB50N65DF5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKB50N65DF5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKB50N65DF5ATMA1 part is unused and in its original packaging.

Return procedure for AIKB50N65DF5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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