Infineon Technologies IKP20N60TXKSA1

Overview

IKP20N60TXKSA1 from Infineon is a 600 V, 20 A TRENCHSTOP™ IGBT with integrated Emitter Controlled HE diode in PG-TO220-3 package. It delivers 1.5 V typical V_CE(sat) at 25°C, 5 µs short-circuit withstand time at 15 V gate drive, and operates up to 175°C junction temperature. Designed for frequency converters and UPS systems, it enables high-efficiency 600 V switching with low EMI and soft diode recovery.

For engineers reviewing the IKP20N60TXKSA1 datasheet, IKP20N60TXKSA1 pinout, IKP20N60TXKSA1 application, or IKP20N60TXKSA1 equivalent, key selection criteria include its 1.5 V V_CE(sat), 120 nC total gate charge, 0.77 mJ total switching energy at 25°C, 176 ns diode reverse recovery time at 175°C, and thermal resistance of 0.9 K/W (IGBT) and 1.5 K/W (diode).

Technical Context

This IGBT uses TRENCHSTOP™ and Fieldstop technology to achieve tight parameter distribution, temperature-stable V_CE(sat) with positive coefficient, and high ruggedness under short-circuit conditions. Its integrated anti-parallel diode features soft, fast recovery (41 ns trr at 25°C, 176 ns at 175°C) and low Q_rr (0.31 µC typ. at 25°C, 1.46 µC at 175°C), minimizing voltage overshoot and losses in hard-switched inverters.

The device is rated for 600 V V_CE, 20 A continuous collector current at T_C = 25°C, and supports pulsed operation up to 60 A. Gate threshold voltage is 4.9 V (typ.), with ±20 V maximum gate-emitter voltage and 7 nH internal emitter inductance-critical for layout-sensitive high-di/dt applications like motor drives and UPS output stages.

Key Specifications

Pinout & Package

IKP20N60TXKSA1 is housed in a PG-TO220-3 plastic package with isolated mounting flange. Pin assignment follows standard TO-220 layout: Pin 1 = Gate (G), Pin 2 = Collector (C), Pin 3 = Emitter (E). The case is electrically connected to the collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-in-DuoPack applications.

Compared with IKP20N60TXKSA1, IKP20N60T offers identical performance with simplified logistics, while FGA20N60UFD trades soft recovery and thermal robustness for lower gate charge (90 nC) and cost-making it viable only in non-critical, cost-driven designs.

Availability

IKP20N60TXKSA1 is available at Aetrix Electronics and suitable for frequency converters, uninterruptible power supplies, and motor drive inverters requiring stable component supply, JEDEC-qualified reliability, and 175°C thermal headroom.

Supply support for IKP20N60TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The TRENCHSTOP™ IGBT series targets industrial power conversion, delivering optimized trade-offs between conduction loss, switching speed, ruggedness, and diode performance for 600 V applications including UPS, VFDs, and solar inverters.

FAQ

What is the maximum gate-emitter voltage rating for IKP20N60TXKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off to ensure reliable commutation and prevent spurious turn-on.

Does IKP20N60TXKSA1 require an external freewheeling diode?

No. It integrates a soft, fast Emitter Controlled HE diode in a DuoPack configuration. This diode provides bidirectional current capability with 41 ns reverse recovery time at 25°C and 176 ns at 175°C, eliminating need for discrete antiparallel diodes in most inverter topologies.

How does the 5 µs short-circuit withstand time translate to system-level protection?

The 5 µs rating applies under V_GE = 15 V, V_CC ≤ 400 V, and T_j ≤ 150°C. It defines the safe window for detection and shutdown-requiring gate driver fault response ≤ 3 µs and system-level overcurrent sensing with <2 µs latency to avoid destructive failure.

Is IKP20N60TXKSA1 RoHS compliant and lead-free?

Yes. It features Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The device is qualified to J-STD-020 moisture sensitivity level (MSL) 1 and supports lead-free reflow profiles up to 260°C peak temperature for 10 seconds.