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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW30H60DFB

Name: STGW30H60DFB
Brand: STMicroelectronics
SKU: STGW30H60DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW30H60DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW30H60DFB.pdf

Description:: IGBT TRENCH FS 600V 60A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:1,134

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Product details

Overview

STGW30H60DFB from STMicroelectronics is a 600 V, 30 A trench gate field-stop IGBT with integrated ultra-fast soft-recovery anti-parallel diode in TO-247 package. It delivers V_CE(sat) = 1.55 V (typ.) at I_C = 30 A, T_J = 25 °C, E_off = 293 µJ, and t_rr = 53 ns - optimized for high-frequency photovoltaic inverters and industrial DC-AC conversion stages.

For engineers reviewing the STGW30H60DFB datasheet, STGW30H60DFB pinout, STGW30H60DFB application, or STGW30H60DFB equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, R_thJC = 0.58 °C/W (IGBT), and tight parameter distribution enabling robust multi-device designs in solar and UPS systems.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction loss (low V_CE(sat)) and switching loss (minimized tail current, E_ts = 676 µJ at T_J = 25 °C). Its integrated diode features soft reverse recovery (Q_rr = 384 nC, dI_rr/dt = 788 A/µs) and low forward voltage (V_F = 2.0 V at I_F = 30 A, T_J = 25 °C).

The device operates across T_J = –55 to +175 °C with ±20 V gate drive capability and exhibits stable transfer characteristics up to 175 °C (V_GE(th) = 5–7 V). Its C_ies = 3659 pF and Q_g = 149 nC support controlled turn-on with 10 Ω gate resistance under 400 V bus conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands full DC bus voltage in 400–600 V PV inverter topologies without derating.
I_C (T_C = 100 °C)	30 A - Sustains continuous output current at elevated heatsink temperatures typical in enclosed solar enclosures.
V_CE(sat) (T_J = 25 °C)	1.55 V (typ.) - Reduces conduction loss to ~46.5 W at 30 A, enabling >98% inverter efficiency at rated load.
E_off	293 µJ - Enables 20–50 kHz switching in hard-switched converters while limiting thermal stress on heatsink.
t_rr (di/dt = 1000 A/µs)	53 ns - Limits voltage overshoot and EMI during diode commutation in bidirectional power flow stages.
R_thJC (IGBT)	0.58 °C/W - Allows direct mounting to heatsink with minimal thermal interface resistance for compact thermal design.
Q_g	149 nC - Determines gate driver peak current requirement (~15 A for 10 ns rise time with 10 Ω resistor).

Pinout & Package

STGW30H60DFB uses the standard TO-247 package with 3 leads: Collector (pin 1), Gate (pin 2), Emitter (pin 3). The metal tab is electrically connected to the collector terminal and serves as the primary thermal path to the heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Collector (C)	Main high-side power terminal; electrically and thermally coupled to heatsink; requires isolation washer if heatsink is grounded.
Pin 2	Gate (G)	Control input requiring ±20 V rating; sensitive to ESD; must be driven with low-inductance layout to suppress oscillation.
Pin 3	Emitter (E)	Power return path and reference for gate drive; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables stable current sharing when paralleling multiple devices without external ballasting resistors.
Tight parameter distribution	Reduces variation in V_CE(sat), t_rr, and Q_g across production lots - critical for consistent system-level timing and loss matching.
Minimized tail current	Lowers E_off by 22% vs prior-generation HB series, reducing switching loss at 25 kHz and above.
Very fast soft recovery diode	Q_rr = 384 nC and softness factor (t_b/t_a) > 2.5 suppress voltage spikes and reduce snubber losses in inductive loads.
Max T_J = 175 °C	Supports operation in high-ambient environments (e.g., rooftop PV inverters) without derating at full current.

Applications

Photovoltaic String Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: DC-to-AC conversion stage in single-phase 5–10 kW string inverters operating at 16–25 kHz with 600 V DC input.

IC Role / Device Role / Timing Role: High-side IGBT switch in H-bridge topology; controls PWM-modulated current into grid-tied transformerless output filter.

Use Value: Low V_CE(sat) and soft diode reduce conduction + switching losses to <1.2% total converter loss at 98% peak efficiency.

Use Scenario: Bidirectional DC-link switching in online double-conversion UPS systems with 400 V DC bus and 50/60 Hz output.

IC Role / Device Role / Timing Role: IGBT in inverter leg driving LC output filter; handles both battery discharge and rectifier regeneration modes.

Use Value: Tight parameter spread ensures balanced current sharing across parallel legs during 10 ms overload transients.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: 3-phase inverter stage for 7.5–15 kW variable frequency drives controlling PMSM/IM motors at 2–10 kHz carrier frequency.

IC Role / Device Role / Timing Role: Phase-leg switch managing sinusoidal PWM current; diode recirculates motor inductive energy during dead-time.

Use Value: R_thJC = 0.58 °C/W allows direct heatsink mounting with <1.5 K/W total thermal resistance, eliminating need for forced air cooling.

Use Scenario: Half-bridge resonant inverter in 20–50 kW induction heating generators operating at 20–100 kHz.

IC Role / Device Role / Timing Role: Main switching device in ZVS topology; diode conducts reverse recovery current during zero-voltage turn-on transitions.

Use Value: t_rr = 53 ns and low dI_rr/dt minimize voltage spike amplitude (<150 V overshoot) and reduce snubber capacitor stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGWA30H60DFB	Same die, TO-247 long leads package; identical electrical specs but 5.1 mm longer leads for improved creepage in high-voltage PCB layouts.	Better suited for 1000 V reinforced insulation requirements in medical or railway traction auxiliary supplies.	Select when board-level clearance >8 mm is mandated and lead-forming is acceptable.
IXYS IXGN30N60B3	600 V/30 A trench IGBT with faster t_rr (35 ns) but higher V_CE(sat) (1.8 V typ.) and no integrated diode - requires external SiC Schottky.	Preferred in ultra-high-frequency (>100 kHz) resonant converters where diode loss dominates over conduction loss.	Choose only when discrete diode optimization is required and gate drive can accommodate higher Q_g (175 nC).

Compared with STGWA30H60DFB, STGW30H60DFB offers shorter leads for lower parasitic inductance in compact inverter modules; versus IXGN30N60B3, it trades 0.25 V higher V_CE(sat) for integrated diode simplicity and superior safe-operating-area margin at 175 °C.

Availability

STGW30H60DFB is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing for Class B safety-critical designs.

Supply support for STGW30H60DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STGW30H60DFB belongs to the HB series of high-speed IGBTs engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial automation systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 25 kHz?

A 10 Ω gate resistor is validated in the datasheet for V_CC = 400 V, I_C = 30 A, and T_J = 175 °C. Increasing beyond 15 Ω raises t_d(off) to >160 ns and increases E_off by 35%, risking thermal runaway in sustained high-load operation. For 25 kHz, 8–12 Ω provides optimal trade-off between switching loss and EMI control.

Can STGW30H60DFB be paralleled without external emitter resistors?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat), ±7% t_rr) enable stable current sharing. Layout symmetry (matched gate and emitter loop inductance) is mandatory; empirical testing shows <8% current imbalance across two devices at 60 A total with 10 cm² copper pour per emitter path.

Does the integrated diode support synchronous rectification in buck-derived topologies?

No - the antiparallel diode is optimized for inductive freewheeling, not unidirectional conduction. Its V_F = 2.0 V at 30 A and soft recovery (t_b/t_a ≈ 2.7) make it unsuitable for high-frequency synchronous rectification where low V_F and fast t_rr are essential. Use discrete SiC Schottky diodes instead.

What is the minimum gate-emitter voltage required to fully enhance the IGBT at T_J = 175 °C?

V_GE(th) drops to 5.0 V (min) at T_J = 175 °C per Table 3. To ensure full enhancement and avoid linear-mode operation, V_GE must exceed 7.5 V under worst-case conditions. ST recommends 15 V nominal gate drive with ±10% tolerance and active Miller clamp circuitry.

STGW30H60DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 260 W

Switching Energy:: 383µJ (on), 293µJ (off)

Input Type:: Standard

Gate Charge:: 149 nC

Td (on/off) @ 25°C:: 37ns/146ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 53 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGW30H60DFB FAQ

1.How can I place an order for STGW30H60DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW30H60DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW30H60DFB reliable?

The price and inventory of STGW30H60DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW30H60DFB is usually 5 days.

3.What payment methods are accepted for STGW30H60DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW30H60DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW30H60DFB?

STGW30H60DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW30H60DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW30H60DFB?

For technical support, including STGW30H60DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW30H60DFB requirements.

6.How does Aetrix verify that STGW30H60DFB is sourced from the original manufacturer or authorized distributors?

All STGW30H60DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW30H60DFB meets industry standards.

7.What is the process for return or replacement of STGW30H60DFB?

All STGW30H60DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGW30H60DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW30H60DFB part is unused and in its original packaging.

Return procedure for STGW30H60DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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