Infineon Technologies IKW30N60DTPXKSA1

Overview

IKW30N60DTPXKSA1 from Infineon is a 600V, 30A TRENCHSTOP™ Performance-series DuoPack IGBT co-packed with a RAPID 1 fast anti-parallel diode in PG-TO247-3 package. It delivers low V_CE(sat) (1.6 V @ T_vj = 25°C), soft fast diode recovery (t_rr = 76 ns), and 175°C max junction temperature - enabling high-efficiency medium-frequency switching in industrial motor drives and solar inverters.

For engineers reviewing the IKW30N60DTPXKSA1 datasheet, IKW30N60DTPXKSA1 pinout, IKW30N60DTPXKSA1 application, or IKW30N60DTPXKSA1 equivalent, key selection criteria include its dual-device integration, thermal robustness (R_th(j-c) = 0.50–0.75 K/W for IGBT), low EMI profile, and JEDEC-qualified reliability for power conversion systems operating up to 20 kHz.

Technical Context

This DuoPack integrates a trench-and-fieldstop IGBT and a soft-recovery RAPID 1 diode on a single die substrate, sharing thermal and mechanical coupling. Its gate threshold voltage (V_GE(th) = 4.1–5.7 V) and transconductance (g_fs = 26 S) support stable drive under wide temperature variation, while short-circuit withstand time (t_SC = 5 µs @ T_vj = 150°C) enables robust protection in fault-prone converters.

The device operates with low turn-off energy (E_off = 0.42 mJ @ 25°C) and minimal tail current, reducing switching losses at 10–20 kHz. Diode reverse recovery charge (Q_rr = 0.45 µC @ 25°C) and peak di/dt (150 A/µs) are optimized to suppress voltage overshoot and oscillation in hard-switched topologies.

Key Specifications

Pinout & Package

Package: PG-TO247-3 - Three-terminal through-hole package with isolated collector tab, optimized for high-current, high-voltage power modules and discrete half-bridge designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + anti-parallel diode applications.

Compared with IKW40N65ES5XKSA1 and FGB3040G2, IKW30N60DTPXKSA1 offers the best balance of low-loss conduction, soft switching behavior, and integrated thermal performance for 400–480 V industrial inverters where EMI and footprint are critical.

Availability

IKW30N60DTPXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for IKW30N60DTPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ Performance series targets high-efficiency, medium-frequency power conversion - designed specifically for motor drives, solar inverters, and UPS systems demanding low conduction loss, soft switching, and extended thermal capability.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_G(off) = 10.5 Ω for test conditions yielding t_d(off) = 179 ns and E_off = 0.42 mJ. Increasing R_G beyond 15 Ω extends turn-off time nonlinearly and raises E_off significantly; values below 8 Ω risk gate oscillation. For 15–20 kHz operation, 10–12 Ω is optimal with a 15 V gate drive.

Can IKW30N60DTPXKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (1.6 V @ 25°C → 1.94 V @ 175°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Derate total current by 15% and ensure ΔT_j ≤ 5°C between devices using thermal vias and shared heatsink area.

Is the integrated diode rated for continuous reverse recovery stress?

Yes - the RAPID 1 diode is characterized for repetitive reverse recovery at di_F/dt = 1160 A/µs and t_rr = 76 ns (25°C). Its soft recovery waveform (low Irrm, low dI_rr/dt) prevents destructive voltage ringing. At 175°C, t_rr increases to 134 ns but remains within safe SOA limits for inductive loads up to 20 kHz.

Does this part require a negative gate voltage for robust noise immunity?

No - the gate threshold voltage (V_GE(th) = 4.1–5.7 V) and ±20 V absolute maximum rating allow stable operation with 0 V / +15 V drive. Negative bias is not required for noise immunity in typical industrial enclosures; however, –5 V may be added in high-dV/dt environments (>500 V/ns) to improve Miller immunity during cross-conduction events.