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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKW50N65DF5XKSA1

Name: AIKW50N65DF5XKSA1
Brand: Infineon Technologies
SKU: AIKW50N65DF5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIKW50N65DF5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AIKW50N65DF5XKSA1.pdf

Description:: IC DISCRETE 650V TO247-3

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Product details

Overview

AIKW50N65DF5XKSA1 from Infineon is a 650 V, 50 A high-speed TRENCHSTOP™ 5 IGBT with integrated RAPID 1 antiparallel diode in PG-TO247-3 package. It delivers 1.66 V V_CE(sat) at 25°C, 108 nC gate charge, and 175°C max junction temperature, optimized for hard-switching and resonant topologies in on-board and off-board EV chargers.

For engineers reviewing the AIKW50N65DF5XKSA1 datasheet, AIKW50N65DF5XKSA1 pinout, AIKW50N65DF5XKSA1 application, or AIKW50N65DF5XKSA1 equivalent, key selection criteria include its low switching energy (0.13–0.93 mJ), soft reverse recovery (77 ns trr at 25°C), and AEC-Q101 qualification for automotive power electronics design.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology to achieve low conduction and switching losses simultaneously. Its copackaged RAPID 1 diode provides fast (trr ≤ 123 ns) and soft reverse recovery with low Q_rr (0.28–1.47 µC) and controlled di/dt (–214 to –759 A/µs), minimizing voltage overshoot and EMI in high-frequency converters.

The device operates across –40°C to +175°C junction range with dynamic stress testing and thermal resistance of 0.55 K/W (IGBT) and 1.50 K/W (diode) junction-to-case. Gate threshold voltage (3.2–4.8 V) and transconductance (62 S typical) support robust gate drive design under varying temperature and load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in PFC and DC/DC stages without derating.
I_C	50 A continuous - Rated collector current at T_C = 25°C; supports 25 A operation at T_C = 100°C per derating curve.
V_CE(sat)	1.66 V @ 50 A, 25°C - Low saturation voltage reduces conduction loss and thermal stress in high-current switching.
Q_G	108 nC - Enables efficient gate driving with moderate gate resistor values (e.g., 12 Ω) for balanced speed/loss trade-off.
E_off	0.14 mJ @ 25°C, 25 A - Low turn-off energy directly lowers switching loss in 20–100 kHz hard-switched applications.
t_rr (diode)	77 ns @ 25°C, 25 A - Fast, soft reverse recovery minimizes snubber requirements and improves system efficiency.
T_vj(max)	175°C - Supports high-temperature operation in compact, thermally constrained automotive modules.

Pinout & Package

AIKW50N65DF5XKSA1 uses the PG-TO247-3 through-hole package with isolated mounting screw hole and backside collector connection. The case serves as the collector terminal, enabling low-inductance layout and direct heatsink coupling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input for IGBT switching; requires stable ±20 V gate drive with <100 nA leakage.
Pin 2	Collector	Main high-side power terminal; electrically tied to backside metal for low-inductance high-current path.
Pin 3	Emitter	Power return and reference node for gate drive; internal emitter inductance is 13 nH (measured 5 mm from case).

Key Features

Feature	Design Value
Integrated RAPID 1 diode	Soft reverse recovery (I_rrm = 15.5 A, dirr/dt = –258 A/µs) reduces voltage spikes and EMI in bidirectional switching.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST-enables use in OBC and DC/DC without requalification.
Low R_th(j-C)	0.55 K/W (IGBT) enables >270 W power dissipation at T_C = 25°C, supporting high-power density designs.
TRENCHSTOP™ 5 technology	Optimized trench geometry achieves best-in-class trade-off between V_CE(sat) and E_off, critical for 10–50 kHz EV charger operation.
Green RoHS package	Pb-free, halogen-free PG-TO247-3 meets automotive environmental compliance without performance compromise.

Applications

On-Board Charger (OBC)

Off-Board DC Fast Charger

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11–22 kW vehicle-integrated chargers.

IC Role / Device Role / Timing Role: Main switching device in totem-pole PFC and isolated DC/DC LLC stages; handles 20–50 kHz hard-switched and resonant waveforms.

Use Value: Low Q_G and soft diode recovery reduce gate drive loss and snubber size, enabling compact, high-efficiency OBC modules.

Use Scenario: High-power rectification and isolation in liquid-cooled 150–350 kW charging stations.

IC Role / Device Role / Timing Role: Primary IGBT in three-phase active front-end (AFE) and secondary-side synchronous rectification.

Use Value: 175°C T_vj(max) and 0.55 K/W R_th(j-C) sustain full-load operation under high ambient and thermal cycling stress.

High-Voltage DC/DC Converter

Industrial Power Factor Correction

Use Scenario: 400–800 V to 12–48 V galvanically isolated conversion for battery management and auxiliary power.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 50–100 kHz.

Use Value: Low E_ts (0.13–0.93 mJ) and stable V_CE(sat) over temperature ensure predictable efficiency across wide load and thermal ranges.

Use Scenario: Three-phase 650 V PFC in industrial UPS, motor drives, and renewable inverters.

IC Role / Device Role / Timing Role: Switching element in Vienna rectifier or boost PFC stage handling continuous 50 A peak current.

Use Value: AEC-Q101 qualification and dynamically stress-tested construction provide long-term reliability in 24/7 industrial operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW50N65ES5	Same 650 V/50 A rating but uses Enhanced Speed (ES5) silicon; higher V_CE(sat) (1.75 V) and slower diode (trr ≈ 110 ns).	Lacks AEC-Q101 qualification; intended for industrial, not automotive, use cases.	Select when cost sensitivity outweighs automotive qualification and soft recovery requirements.
AIKW40N65DF5	Lower 40 A rating, identical F5 die and RAPID 1 diode; reduced Q_G (85 nC) and E_off (0.11 mJ).	Same AEC-Q101 and package; suited for 11–15 kW OBC where lower current suffices.	Choose for thermally constrained layouts needing lower gate drive power and reduced switching loss at partial load.

Compared with IKW50N65ES5 and AIKW40N65DF5, AIKW50N65DF5XKSA1 uniquely combines AEC-Q101 compliance, lowest V_CE(sat), and fastest soft diode recovery-making it optimal for automotive-grade, high-efficiency, high-power-density EV power conversion.

Availability

AIKW50N65DF5XKSA1 is available at Aetrix Electronics and suitable for on-board chargers, off-board DC fast chargers, and high-voltage DC/DC converters requiring stable component supply, automotive qualification, and high-temperature reliability.

Supply support for AIKW50N65DF5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with global manufacturing and automotive-grade quality systems.

AIKW50N65DF5XKSA1 belongs to Infineon's TRENCHSTOP™ 5 High-Speed IGBT product line, engineered specifically for high-frequency, high-efficiency power conversion in electric vehicle onboard and offboard charging systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 12 Ω for standard test conditions (V_CC = 400 V, I_C = 25 A). For 50 A operation, a 10–15 Ω gate resistor balances switching speed and voltage overshoot. Values above 22 Ω significantly increase E_on and may cause thermal runaway under high-frequency operation.

Is AIKW50N65DF5XKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes-its low C_res (11 pF) and soft RAPID 1 diode enable clean ZVS transitions in LLC and phase-shifted full-bridge converters. Measured t_rr of 77 ns at 25°C and controlled dirr/dt (–258 A/µs) prevent voltage spike-induced failure during resonant turn-on.

How does the backside collector connection affect PCB layout?

The backside collector (Pin 2) must be soldered or clamped directly to a heatsink or copper plane. This eliminates bondwire inductance and reduces loop inductance by >50% versus standard TO-247, lowering dV/dt stress and EMI. Thermal vias under the tab are mandatory for effective heat transfer.

Does this part require negative gate voltage for safe turn-off?

No-AIKW50N65DF5XKSA1 is rated for transient V_GE = ±30 V (tp ≤ 10 µs), but stable operation is confirmed with 0 V/15 V gate drive. Negative bias is unnecessary due to low IG_ES (≤100 nA) and high V_GE(th) margin (3.2–4.8 V), reducing gate driver complexity.

AIKW50N65DF5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: Trenchstop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 270 W

Switching Energy:: 490µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 1018 nC

Td (on/off) @ 25°C:: 21ns/156ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

AIKW50N65DF5XKSA1 FAQ

1.How can I place an order for AIKW50N65DF5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKW50N65DF5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKW50N65DF5XKSA1 reliable?

The price and inventory of AIKW50N65DF5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKW50N65DF5XKSA1 is usually 5 days.

3.What payment methods are accepted for AIKW50N65DF5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKW50N65DF5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKW50N65DF5XKSA1?

AIKW50N65DF5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKW50N65DF5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKW50N65DF5XKSA1?

For technical support, including AIKW50N65DF5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKW50N65DF5XKSA1 requirements.

6.How does Aetrix verify that AIKW50N65DF5XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIKW50N65DF5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKW50N65DF5XKSA1 meets industry standards.

7.What is the process for return or replacement of AIKW50N65DF5XKSA1?

All AIKW50N65DF5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKW50N65DF5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKW50N65DF5XKSA1 part is unused and in its original packaging.

Return procedure for AIKW50N65DF5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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