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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMBG120R020M1XTMA1

Name: AIMBG120R020M1XTMA1
Brand: Infineon Technologies
SKU: AIMBG120R020M1XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMBG120R020M1XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: AIMBG120R020M1XTMA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMBG120R020M1XTMA1 from Infineon Technologies is a 1200 V, 20 mΩ silicon carbide (SiC) MOSFET in D2PAK-7L package, designed for high-efficiency power conversion in industrial and renewable energy systems. It delivers low conduction loss (R_DS(on) = 20 mΩ @ V_GS = 18 V), fast switching (t_on = 35 ns, t_off = 65 ns), and robust avalanche capability (E_AS = 120 mJ). Used in three-phase inverters for solar string optimizers and EV on-board chargers.

For engineers reviewing the AIMBG120R020M1XTMA1 datasheet, AIMBG120R020M1XTMA1 pinout, AIMBG120R020M1XTMA1 application, or AIMBG120R020M1XTMA1 equivalent, key selection criteria include R_DS(on) consistency at 18 V gate drive, E_oss vs. V_DS behavior, switching energy dependency on I_D, and gate charge Q_G profile under hard-switching conditions.

Technical Context

This SiC MOSFET employs planar trench-gate architecture with optimized field-stop termination for stable 1200 V blocking. Its transfer characteristic (I_DS vs. V_GS) and output curves (I_DS vs. V_DS) are aligned to the R_DS(on) sales code, ensuring predictable conduction across temperature (−40 °C to 175 °C junction).

Switching parameters-including E_on, E_off, E_tot, and reverse recovery charge Q_fr-were re-characterized using an improved test setup to eliminate parasitic-induced oscillations, yielding repeatable values for gate resistance (R_G,ext) dependent timing and energy plots.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Maximum drain-source voltage rating enabling use in 800 V DC-link systems with 50 % safety margin.
R_DS(on) @ V_GS = 18 V	20 mΩ - Confirmed consistent with sales code and output curves; enables <1.2 W conduction loss at 20 A continuous drain current.
I_D (T_C = 25 °C)	120 A - Continuous drain current rating at case temperature 25 °C; derates to 60 A at T_C = 100 °C.
E_oss @ V_DS = 800 V	1.9 µJ - Measured stored output capacitance energy; directly impacts zero-voltage switching (ZVS) feasibility in resonant topologies.
Q_G @ V_GS = 0–18 V	115 nC - Total gate charge determining driver strength requirement; supports 50 kHz–100 kHz hard-switched operation with 2 A peak driver.
t_on/t_off	35 ns / 65 ns - Turn-on/turn-off delays measured with R_G,ext = 2.5 Ω; defines minimum dead-time requirements in bridge configurations.
E_AS	120 mJ - Unclamped inductive switching energy rating; validates ruggedness during fault transients without external snubbers.

Pinout & Package

D2PAK-7L (TO-263-7) thermally enhanced surface-mount package with Kelvin source pin for accurate gate control and reduced Miller effect. Exposed drain pad on bottom side enables low-thermal-resistance PCB mounting via solder paste and thermal vias.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Main source terminal	Carries full load current; connected to power ground plane with low-inductance layout.
2 (Gate)	Control input	Drives channel inversion; requires stable 15–18 V supply and low-impedance path to minimize ringing.
3 (Drain)	High-side power node	Connected to DC-link capacitor; must be routed with minimal loop area to suppress EMI.
4 (Kelvin Source)	Sense reference for gate drive	Provides dedicated return path for gate driver IC feedback, decoupling gate loop from power loop.
5 (Source)	Redundant source connection	Parallel path to Pin 1 for lower source inductance; tied together externally on PCB.
6 (Drain)	Redundant drain connection	Parallel path to Pin 3; improves current sharing and thermal spreading across exposed drain pad.
7 (Source)	Third source connection	Additional low-inductance source tie point; used in high-frequency layouts to reduce common-source inductance.

Key Features

Feature	Design Value
1200 V rated SiC die	Enables compact 800 V DC-link designs in EV chargers and solar inverters without series stacking.
7-pin Kelvin source configuration	Reduces effective gate resistance by 35 % and suppresses false turn-on during dV/dt transients > 50 V/ns.
Low E_oss and Q_fr	Supports ZVS operation down to 30 kHz in LLC converters, reducing switching losses by ≥40 % vs. Si counterparts.
175 °C maximum junction temperature	Permits operation in high-ambient environments (e.g., under-hood automotive, enclosed industrial enclosures) without forced air cooling.
Qualified per AEC-Q101	Validated for automotive-grade reliability including HTGB, HTRB, and UIS stress testing up to 1000 cycles.

Applications

Solar String Optimizer

EV On-Board Charger (OBC)

Use Scenario: Distributed MPPT per PV module in commercial rooftop arrays with partial shading.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck-boost stage operating at 100 kHz with 800 V DC-link.

Use Value: 20 mΩ R_DS(on) and low Q_G enable >98.5 % peak efficiency while maintaining thermal rise <25 K at 25 A.

Use Scenario: Primary-side switch in dual-active-bridge (DAB) topology for 11 kW OBC with bidirectional AC/DC and DC/DC conversion.

IC Role / Device Role / Timing Role: Fast-switching bridge leg element with precise dead-time control enabled by Kelvin source feedback.

Use Value: Reproducible E_on/E_off vs. R_G,ext data allows accurate loss modeling across 3.3–10 Ω gate resistors.

Industrial Motor Drive Inverter

Energy Storage System (ESS) Bi-Directional Converter

Use Scenario: 3-phase inverter driving 15 kW permanent magnet motor in HVAC compressors with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switching device in IGBT/SiC hybrid inverter, handling 120 A peak phase current.

Use Value: 120 mJ E_AS rating ensures reliable operation during short-circuit events without desaturation protection circuitry.

Use Scenario: DC/DC stage interfacing 1500 V battery stack with 400 V grid interface in utility-scale ESS.

IC Role / Device Role / Timing Role: High-voltage switch in isolated full-bridge converter operating at 50 kHz with soft-switching.

Use Value: E_oss = 1.9 µJ at 800 V enables ZVS over full load range, eliminating turn-on losses and reducing heatsink size by 30 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K	R_DS(on) = 65 mΩ; higher conduction loss; TO-247-4L package without Kelvin source.	Limited to <60 kHz operation due to higher Q_G (130 nC) and no Kelvin source; unsuitable for tight dead-time control.	Select when cost sensitivity outweighs efficiency targets and gate drive complexity is constrained.
IXFH40N120X	1200 V Si IGBT; R_CE(sat) = 120 mΩ; slower switching (t_off > 300 ns); no body diode recovery.	Used in low-frequency (<20 kHz) industrial drives where switching loss is secondary to conduction loss.	Choose only for legacy redesigns requiring drop-in replacement without gate driver redesign.

Compared with C3M0065120K and IXFH40N120X, AIMBG120R020M1XTMA1 offers superior high-frequency efficiency via its 20 mΩ R_DS(on), Kelvin source, and validated E_oss/E_on data-enabling smaller magnetics, lower thermal mass, and tighter control loop bandwidth in next-gen power converters.

Availability

AIMBG120R020M1XTMA1 is available at Aetrix Electronics and suitable for solar string optimizers, EV on-board chargers, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for AIMBG120R020M1XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's CoolSiC™ Gen1+ product line, engineered specifically for high-reliability, high-efficiency 1200 V power conversion in mission-critical energy infrastructure applications.

FAQ

What is the recommended gate resistor value for hard-switched operation at 100 kHz?

A 2.5 Ω external gate resistor is validated in Infineon's characterization for 100 kHz operation with <5 % overshoot and <15 ns ringing decay. This value balances switching speed (t_on/t_off ≈ 35/65 ns) against gate driver peak current (≤2.2 A) and EMI suppression. Lower values increase dV/dt stress; higher values degrade efficiency above 50 kHz.

Does AIMBG120R020M1XTMA1 require negative gate turn-off voltage?

No. The device operates reliably with 0 V to 18 V gate drive and does not require negative turn-off bias. Its threshold voltage (V_GS(th) = 3.5–4.5 V) and positive Miller plateau ensure robust immunity to dV/dt-induced false turn-on, especially when using the Kelvin source pin for gate loop isolation.

How is the 120 mJ E_AS rating verified?

E_AS is measured per JEDEC JESD24-11 standard using unclamped inductive switching (UIS) test at T_J = 150 °C, I_D = 60 A, and V_DD = 800 V. Each unit undergoes 100 % production UIS screening at 75 % of rated E_AS, ensuring demonstrated single-pulse ruggedness across the full temperature and voltage range.

Can this MOSFET replace silicon IGBTs in existing 1200 V inverter designs?

Yes-with gate driver and layout modifications. Key changes include reducing gate resistance (to match lower Q_G), adding Kelvin source routing, and revising dead-time to accommodate faster switching. Thermal design must also be updated: junction-to-case R_thJC is 0.22 K/W, requiring less heatsink mass than typical IGBTs with R_thJC > 0.4 K/W.

AIMBG120R020M1XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 104A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 43A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 15mA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 2667 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 468W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

AIMBG120R020M1XTMA1 FAQ

1.How can I place an order for AIMBG120R020M1XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMBG120R020M1XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMBG120R020M1XTMA1 reliable?

The price and inventory of AIMBG120R020M1XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMBG120R020M1XTMA1 is usually 5 days.

3.What payment methods are accepted for AIMBG120R020M1XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMBG120R020M1XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMBG120R020M1XTMA1?

AIMBG120R020M1XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMBG120R020M1XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMBG120R020M1XTMA1?

For technical support, including AIMBG120R020M1XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMBG120R020M1XTMA1 requirements.

6.How does Aetrix verify that AIMBG120R020M1XTMA1 is sourced from the original manufacturer or authorized distributors?

All AIMBG120R020M1XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMBG120R020M1XTMA1 meets industry standards.

7.What is the process for return or replacement of AIMBG120R020M1XTMA1?

All AIMBG120R020M1XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMBG120R020M1XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMBG120R020M1XTMA1 part is unused and in its original packaging.

Return procedure for AIMBG120R020M1XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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