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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMBG120R030M1XTMA1

Name: AIMBG120R030M1XTMA1
Brand: Infineon Technologies
SKU: AIMBG120R030M1XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMBG120R030M1XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: AIMBG120R030M1XTMA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMBG120R030M1XTMA1 from Infineon Technologies is a 1200 V, 30 mΩ silicon carbide (SiC) MOSFET in D2PAK-7L package, rated for 58 A continuous drain current at T_c = 25 °C and optimized for high-efficiency, high-frequency power conversion in hard-switched and resonant topologies. It features low gate charge (Q_g = 94 nC), fast switching (t_on = 35 ns, t_off = 65 ns), and robust body diode with Q_rr = 220 nC.

For engineers reviewing the AIMBG120R030M1XTMA1 datasheet, AIMBG120R030M1XTMA1 pinout, AIMBG120R030M1XTMA1 application, or AIMBG120R030M1XTMA1 equivalent, key selection criteria include R_DS(on) tolerance at V_GS = 18 V, switching energy E_on/E_off vs. external gate resistance, C_oss stored energy vs. V_DS, and body diode reverse recovery behavior under hard commutation.

Technical Context

This Gen1p SiC MOSFET employs planar trench-gate architecture with optimized field-stop design to achieve stable 1200 V blocking capability and reduced Miller capacitance (C_rss = 45 pF). Its threshold voltage (V_th = 3.5–5.5 V) ensures noise-immune gate drive while supporting standard 15–18 V turn-on bias.

The device integrates a co-packaged, low-Q_rr SiC Schottky body diode enabling zero-voltage switching (ZVS) in LLC and phase-shifted full-bridge converters. Switching parameters-including E_on = 1.1 mJ and E_off = 1.4 mJ at I_D = 40 A, V_DD = 800 V, R_G,ext = 5 Ω-are characterized using an improved test setup to eliminate parasitic oscillation artifacts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Maximum drain-source blocking voltage for use in 800 V DC-link systems with 20 % derating margin.
R_DS(on) @ V_GS = 18 V	30 mΩ (max) - Confirmed by sales code and output curve alignment; enables <1.2 W conduction loss at 58 A.
I_D (cont) @ T_c = 25 °C	58 A - Continuous drain current rating defining thermal design basis for heatsink sizing in forced-air cooling.
Q_g	94 nC - Total gate charge determining gate driver peak current requirement (~2.8 A for 33 ns rise time).
E_on + E_off	2.5 mJ @ I_D = 40 A, V_DD = 800 V, R_G,ext = 5 Ω - Measured with improved setup; supports >100 kHz operation with <0.5 % switching loss share.
C_oss stored energy	125 µJ @ V_DS = 800 V - Directly impacts ZVS boundary and resonant tank design in soft-switching topologies.

Pinout & Package

Package: D2PAK-7L (TO-263-7) with Kelvin source pin for accurate gate control and minimized common-source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Main source terminal	Carries full load current; connected to power ground plane.
2 (Gate)	Control input	Drives channel inversion; requires low-inductance routing to gate driver.
3 (Drain)	High-side power node	Connected to DC-link capacitor positive; handles full blocking voltage.
4 (Kelvin Source)	Sense reference for gate drive	Provides dedicated low-noise return path for gate loop, reducing V_GS distortion during switching.
5 (Source)	Main source terminal (redundant)	Parallel path with Pin 1 to reduce source inductance and improve current sharing.
6 (Drain)	Drain connection (redundant)	Second drain pad for enhanced thermal and current handling in high-power layouts.
7 (Source)	Main source terminal (redundant)	Third source pad to minimize package inductance and support >100 A pulse currents.

Key Features

Feature	Design Value
Gen1p SiC process	Enables stable 1200 V rating with <±10 % R_DS(on) variation across temperature and lifetime.
Kelvin source configuration	Reduces effective gate loop inductance to <0.5 nH, suppressing Miller-induced false turn-on in high-dV/dt environments.
Low C_iss/C_oss ratio	C_iss/C_oss = 12.5 - Improves controllability during hard switching and reduces capacitive losses in snubber networks.
Body diode Q_rr	220 nC - Enables bidirectional current flow with <100 ns reverse recovery time, supporting synchronous rectification in isolated DC-DC.
Enhanced ESD rating	HBM Class 2 (2 kV) - Allows safe handling in automated SMT assembly without special grounding protocols.

Applications

Industrial Motor Drives

Photovoltaic Inverters

Use Scenario: Three-phase inverter stage in 15–30 kW servo drives operating at 16 kHz PWM frequency with active cooling.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT-replacement topology, delivering precise torque control via space-vector modulation.

Use Value: 30 mΩ R_DS(on) and 2.5 mJ total switching energy reduce system losses by 18 % compared to 1200 V IGBT modules at same power level.

Use Scenario: DC-AC stage of string inverters converting 1000 V DC input to 230 V AC grid output with >98.5 % peak efficiency.

IC Role / Device Role / Timing Role: Half-bridge switch in unipolar modulation scheme, leveraging fast turn-off to minimize dead-time distortion.

Use Value: Low Q_rr and Kelvin source enable clean commutation at 40 kHz, eliminating need for external anti-parallel SiC diodes.

Onboard EV Chargers

High-Voltage DC-DC Converters

Use Scenario: Isolated bi-directional AC-DC stage in 11 kW OBCs complying with ISO 15118 and IEC 61851 standards.

IC Role / Device Role / Timing Role: Active clamp flyback switch managing 1200 V transient surges during regenerative braking events.

Use Value: 1200 V rating and 130 °C T_j max allow direct integration into compact liquid-cooled modules without derating.

Use Scenario: Primary-side switch in 3.3 kW, 800 V-to-48 V automotive DC-DC converter for 48 V mild-hybrid systems.

IC Role / Device Role / Timing Role: Resonant half-bridge switch synchronized to variable-frequency LLC controller for zero-voltage turn-on.

Use Value: C_oss stored energy of 125 µJ at 800 V sets precise ZVS boundary, enabling >96 % efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0030120K	R_DS(on) = 30 mΩ but higher Q_g = 115 nC; no Kelvin source; TO-247-4L package.	Limited to lower-frequency (<60 kHz) designs due to gate inductance sensitivity; unsuitable for ZVS-critical topologies.	Select when cost-sensitive, non-Kelvin layouts dominate and gate drive loop inductance is tightly controlled.
IXFH30N120X	1200 V SiC MOSFET with R_DS(on) = 32 mΩ, Q_g = 88 nC, and integrated Kelvin source in TO-247-4L.	Higher E_off (1.7 mJ) and lower C_oss energy (95 µJ) shift ZVS boundary to lower currents.	Prefer where tighter gate charge budget exists but thermal interface constraints favor TO-247 over D2PAK mounting.

Compared with C3M0030120K and IXFH30N120X, AIMBG120R030M1XTMA1 delivers superior ZVS enablement via its lower C_oss energy and Kelvin-source layout, making it optimal for high-density, high-frequency DC-DC and OBC designs where layout parasitics cannot be fully mitigated.

Availability

AIMBG120R030M1XTMA1 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, onboard EV chargers, and high-voltage DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for AIMBG120R030M1XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

AIMBG120R030M1XTMA1 belongs to Infineon's Gen1p CoolSiC™ MOSFET product line, engineered specifically for high-efficiency, high-reliability 1200 V power conversion in space-constrained, thermally demanding applications.

FAQ

What is the maximum junction temperature rating for AIMBG120R030M1XTMA1?

The absolute maximum junction temperature (T_j) is 175 °C, with recommended continuous operation limited to 150 °C to ensure long-term reliability under repetitive thermal cycling. The device's SOA curve confirms safe operation up to 130 °C case temperature at rated current, validated per JEDEC JESD22-A108.

Does AIMBG120R030M1XTMA1 require negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V gate turn-off and 15–18 V gate turn-on. Its V_th range (3.5–5.5 V) provides sufficient noise margin against spurious turn-on without needing –2 V to –5 V negative bias, simplifying gate driver design and reducing component count.

How does the Kelvin source pin affect PCB layout requirements?

The Kelvin source pin must be routed separately from the main source power path, connecting directly to the gate driver's source reference with minimal trace length (<5 mm) and no shared vias or planes. This isolation prevents voltage drop in the main source loop from modulating V_GS, ensuring consistent switching timing and preventing shoot-through in bridge configurations.

Can AIMBG120R030M1XTMA1 replace silicon IGBTs in existing 1200 V designs without layout changes?

Direct replacement is not recommended without layout review. While pin-compatible with standard D2PAK footprints, the Kelvin source requires dedicated routing, and faster switching demands stricter gate loop inductance control (<10 nH). Layout modifications-especially gate driver placement and source return path-are necessary to realize full SiC performance benefits and avoid oscillation.

AIMBG120R030M1XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 27A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 8.6mA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1738 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

AIMBG120R030M1XTMA1 FAQ

1.How can I place an order for AIMBG120R030M1XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMBG120R030M1XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMBG120R030M1XTMA1 reliable?

The price and inventory of AIMBG120R030M1XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMBG120R030M1XTMA1 is usually 5 days.

3.What payment methods are accepted for AIMBG120R030M1XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMBG120R030M1XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMBG120R030M1XTMA1?

AIMBG120R030M1XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMBG120R030M1XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMBG120R030M1XTMA1?

For technical support, including AIMBG120R030M1XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMBG120R030M1XTMA1 requirements.

6.How does Aetrix verify that AIMBG120R030M1XTMA1 is sourced from the original manufacturer or authorized distributors?

All AIMBG120R030M1XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMBG120R030M1XTMA1 meets industry standards.

7.What is the process for return or replacement of AIMBG120R030M1XTMA1?

All AIMBG120R030M1XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMBG120R030M1XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMBG120R030M1XTMA1 part is unused and in its original packaging.

Return procedure for AIMBG120R030M1XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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