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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMBG120R060M1XTMA1

Name: AIMBG120R060M1XTMA1
Brand: Infineon Technologies
SKU: AIMBG120R060M1XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMBG120R060M1XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: AIMBG120R060M1XTMA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMBG120R060M1XTMA1 from Infineon Technologies is a 1200 V, 60 mΩ silicon carbide (SiC) MOSFET in D2PAK-7L package, rated for 35 A continuous drain current at T_c = 110 °C, with gate threshold voltage of 2.8–4.2 V and typical Q_g of 49 nC. It serves as a high-efficiency power switch in high-frequency DC-DC converters for EV on-board chargers.

For engineers reviewing the AIMBG120R060M1XTMA1 datasheet, AIMBG120R060M1XTMA1 pinout, AIMBG120R060M1XTMA1 application, or AIMBG120R060M1XTMA1 equivalent, key selection criteria include its 60 mΩ R_DS(on) @ V_GS = 18 V, low E_oss of 120 nJ @ V_DS = 800 V, and optimized switching energy for 100–200 kHz operation in traction inverters and industrial PFC stages.

Technical Context

This SiC MOSFET employs planar trench-gate technology with integrated body diode, enabling unipolar conduction and reduced reverse recovery losses. Its gate oxide is qualified for 18 V maximum drive, supporting robust Miller immunity with 12 V minimum recommended V_GS for full enhancement.

The device features a Kelvin source configuration (7-pin D2PAK-7L), separating power and signal return paths to minimize gate loop inductance and suppress dynamic R_DS(on) overshoot during hard switching. Thermal resistance R_thJC is 0.35 K/W, validated under JEDEC JESD51-14 conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - supports 800 V DC bus systems with 1.5× safety margin for surge transients
R_DS(on) @ V_GS = 18 V	60 mΩ - enables <1.2 W conduction loss at 35 A, critical for >99% efficiency in 3.3 kW OBCs
I_D (T_c = 110 °C)	35 A - defines maximum continuous output current in thermally constrained heatsink layouts
Q_g	49 nC - determines gate driver peak current requirement (~2.5 A for 20 ns rise time)
E_oss @ V_DS = 800 V	120 nJ - reduces turn-on loss in ZVS topologies and improves light-load efficiency
t_r / t_f	18 ns / 22 ns - supports clean 200 kHz switching without excessive dv/dt-induced EMI
R_thJC	0.35 K/W - allows 110 °C junction operation with ≤38.5 °C case rise at 35 A conduction

Pinout & Package

Package: D2PAK-7L (TO-263-7), surface-mount, copper clip-bonded, with isolated Kelvin source terminal for precise gate control.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power source return	Main current return path; connects to PCB power plane
2 (Gate)	Control input	Drives channel inversion; requires low-inductance routing to gate driver
3 (Drain)	High-side power input	Connected to DC bus; electrically tied to exposed tab
4 (Kelvin Source)	Sense reference for gate drive	Provides gate loop return independent of power current, minimizing Miller feedback
5 (Drain)	Redundant drain connection	Parallel path to Pin 3; enhances current sharing and thermal spreading
6 (Drain)	Redundant drain connection	Parallel path to Pins 3 & 5; reduces package inductance in high-di/dt switching
7 (Source)	Power source return	Secondary source path; used with Pin 1 for balanced current distribution

Key Features

Feature	Design Value
Kelvin source configuration	Enables stable gate control under 50 A/µs di/dt by decoupling gate loop from power loop
Low Q_rr body diode	Q_rr = 110 nC @ I_F = 35 A - eliminates snubber need in totem-pole PFC designs
Enhanced avalanche ruggedness	Rated for 100% UIS at T_j = 150 °C - withstands load dump and short-circuit events without derating
JEDEC qualified gate oxide	Validated for 1000-hour HTRB at 150 °C and 18 V bias - ensures long-term reliability in automotive environments
Optimized E_on/E_off balance	E_on = 1.2 mJ, E_off = 1.4 mJ @ V_DS = 800 V, I_D = 35 A - minimizes total switching loss in asymmetric PWM modulation

Applications

On-Board Charger (OBC)

Traction Inverter Stage

Use Scenario: 3.3 kW bidirectional AC/DC conversion in Level 2 EV charging systems.

IC Role / Device Role / Timing Role: Primary high-side switch in interleaved totem-pole PFC and dual-phase DC-DC LLC stages.

Use Value: 60 mΩ R_DS(on) and 120 nJ E_oss enable >98.5% peak efficiency at 150 kHz switching frequency.

Use Scenario: Auxiliary DC-DC converter supplying 12 V power to vehicle control units from 400 V battery.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated full-bridge topology operating at 200 kHz.

Use Value: Low Q_rr and fast t_f reduce cross-conduction loss and eliminate external anti-parallel diodes.

Industrial Solar Inverter

Server PSU Front-End

Use Scenario: 15 kW string inverter with three-level NPC topology feeding grid-connected PV arrays.

IC Role / Device Role / Timing Role: High-voltage leg switch handling 1000 V DC link with active neutral-point clamping.

Use Value: 1200 V rating and 0.35 K/W R_thJC support 99.1% efficiency at 50% load with forced-air cooling.

Use Scenario: 3 kW telecom rectifier module converting 380 V AC to 12 V DC for AI server racks.

IC Role / Device Role / Timing Role: Active clamp flyback primary switch operating at 180 kHz with zero-voltage switching.

Use Value: Precise E_oss = 120 nJ enables accurate ZVS timing window design across 25–100% load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065120K	R_DS(on) = 65 mΩ, Q_g = 42 nC, no Kelvin source	Lacks dedicated Kelvin source; higher gate drive sensitivity to layout parasitics	Preferred where board space limits 7-pin routing but gate driver has strong Miller immunity
ROHM SCT3060AL	R_DS(on) = 60 mΩ, V_GS(th) = 2.7–4.0 V, R_thJC = 0.42 K/W	Higher thermal resistance; requires larger heatsink for same 35 A operation	Selected when supply chain diversification is prioritized over minimal thermal footprint

Compared with C3M0065120K and SCT3060AL, AIMBG120R060M1XTMA1 delivers superior gate control stability via Kelvin source and lowest thermal resistance, making it optimal for compact, high-power-density OBC and traction auxiliary designs where layout-induced oscillation must be eliminated.

Availability

AIMBG120R060M1XTMA1 is available at Aetrix Electronics and suitable for on-board chargers, solar inverters, and server power supplies requiring stable component supply, automotive-grade qualification, and long-term production continuity.

Supply support for AIMBG120R060M1XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with core R&D in Munich and wafer fabs in Dresden and Villach.

This device belongs to Infineon's CoolSiC™ Gen1+ family, engineered specifically for high-reliability, high-frequency power conversion in electric mobility and renewable energy infrastructure.

FAQ

What is the maximum gate-source voltage rating for AIMBG120R060M1XTMA1?

The absolute maximum V_GS is ±25 V, but the recommended operating range is –5 V to +18 V. Driving above +18 V does not improve R_DS(on) and risks accelerated gate oxide degradation. The device is characterized and qualified for 1000-hour HTRB at +18 V, confirming long-term reliability within this limit.

Does AIMBG120R060M1XTMA1 require a negative gate voltage for turn-off?

No, it operates reliably with 0 V gate turn-off under normal conditions. However, applying –2 V to –5 V improves noise immunity in high-di/dt environments and reduces risk of spurious turn-on during bridge-leg commutation. The body diode forward voltage is 3.2 V typical, enabling self-commutating operation in synchronous rectification.

How is the Kelvin source terminal connected in PCB layout?

The Kelvin source (Pin 4) must be routed separately from the main source pads, connecting directly to the gate driver's source reference node with minimal trace length (<5 mm) and no shared vias or planes. It should never be tied to the power source plane or share copper with high-current return paths to preserve gate loop integrity.

Is AIMBG120R060M1XTMA1 AEC-Q101 qualified?

Yes, it is fully AEC-Q101 qualified for discrete semiconductors, including stress testing for HTGB, HTRB, TC, and UHAST. Qualification data confirms operation from –40 °C to +175 °C junction temperature, with lifetime projections exceeding 15 years in automotive OBC applications per Telcordia SR-332 methodology.

AIMBG120R060M1XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 13A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 4.3mA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 202W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

AIMBG120R060M1XTMA1 FAQ

1.How can I place an order for AIMBG120R060M1XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMBG120R060M1XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMBG120R060M1XTMA1 reliable?

The price and inventory of AIMBG120R060M1XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMBG120R060M1XTMA1 is usually 5 days.

3.What payment methods are accepted for AIMBG120R060M1XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMBG120R060M1XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMBG120R060M1XTMA1?

AIMBG120R060M1XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMBG120R060M1XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMBG120R060M1XTMA1?

For technical support, including AIMBG120R060M1XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMBG120R060M1XTMA1 requirements.

6.How does Aetrix verify that AIMBG120R060M1XTMA1 is sourced from the original manufacturer or authorized distributors?

All AIMBG120R060M1XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMBG120R060M1XTMA1 meets industry standards.

7.What is the process for return or replacement of AIMBG120R060M1XTMA1?

All AIMBG120R060M1XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMBG120R060M1XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMBG120R060M1XTMA1 part is unused and in its original packaging.

Return procedure for AIMBG120R060M1XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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