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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMW120R060M1HXKSA1

Name: AIMW120R060M1HXKSA1
Brand: Infineon Technologies
SKU: AIMW120R060M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMW120R060M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: AIMW120R060M1HXKSA1.pdf

Description:: 1200V COOLSIC MOSFET PG-TO247-3

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Product details

Overview

AIMW120R060M1HXKSA1 from Infineon is a 1200V, 36A silicon carbide trench MOSFET in PG-TO247-3-41 package with 60 mΩ typical R_DS(on) at 25°C, V_GS(th) = 4.5 V, and AEC-Q101 qualification for automotive use. It delivers low switching losses, IGBT-compatible 18 V turn-on gate drive, and commutation-robust body diode for synchronous rectification in high-voltage DC-DC converters.

For engineers reviewing the AIMW120R060M1HXKSA1 datasheet, AIMW120R060M1HXKSA1 pinout, AIMW120R060M1HXKSA1 application, or AIMW120R060M1HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, gate threshold voltage consistency across 25–175°C, dv/dt robustness up to 200 kV/µs, and body diode Q_rr performance at elevated junction temperatures.

Technical Context

This SiC MOSFET employs Infineon's CoolSiC™ Gen1 trench architecture, enabling zero-threshold conduction and stable 60 mΩ R_DS(on) up to 100°C (76 mΩ) and 175°C (113 mΩ). Its gate structure supports 0 V turn-off and 18 V turn-on, with verified 200 kV/µs dV/dt immunity limited only by test setup-not device capability.

The integrated body diode exhibits 116 nC reverse recovery charge (Q_rr) at 25°C and 244 nC at 175°C under 800 V, 13 A conditions, enabling reliable synchronous rectification without external diodes in bidirectional topologies like on-board chargers and boost converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Withstands DC bus voltages up to 1200 V in EV traction inverters and industrial HVDC systems.
R_DS(on), typ	60 mΩ @ 25°C - Enables low conduction loss at 13 A, critical for efficiency in PFC stages operating near full load.
I_D, max	36 A @ T_C = 25°C - Supports continuous output current in 11 kW on-board chargers with forced-air cooling.
V_GS(th)	4.5 V @ 25°C - Provides sharp, temperature-stable turn-on transition, reducing shoot-through risk in half-bridge configurations.
Q_G	31 nC - Matches standard gate drivers (e.g., 1ED34xx) without requiring oversized gate resistors or active clamping.
E_off	79 µJ @ 25°C - Low turn-off energy enables 100+ kHz switching in isolated DC-DC converters without excessive thermal stress.
R_th(j-c)	0.8 K/W typ - Enables direct heatsink mounting with <1.5 K/W total thermal path to maintain T_vj ≤ 175°C at 36 A.
Q_rr	116 nC @ 25°C - Reduces body diode loss and EMI during hard-commutation, supporting ZVS design in LLC resonant converters.

Pinout & Package

PG-TO247-3-41 package with isolated tab, optimized for high-power automotive applications. Pin 1: Source; Pin 2: Drain; Pin 3: Gate.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path and gate reference	Low-inductance source connection essential for minimizing common-source inductance in high-dv/dt switching.
Pin 2 (Drain)	High-voltage power input/output node	Internally connected to die backside; requires low-impedance heatsink interface for thermal and electrical grounding.
Pin 3 (Gate)	Control terminal for channel modulation	Designed for 0–18 V logic-level drive; sensitive to ringing-requires local RC snubber and Kelvin source routing.

Key Features

Feature	Design Value
SiC trench technology	Enables 60 mΩ R_DS(on) at 1200 V while maintaining >175°C maximum junction temperature rating.
IGBT-compatible gate drive	Operates with standard 15–18 V turn-on and 0 V turn-off, eliminating need for negative bias circuitry in legacy designs.
Commutation-robust body diode	Q_rr = 116 nC and Irrm = 5 A at 25°C enable reliable synchronous rectification without external diode parallel.
AEC-Q101 qualified	Validated for automotive-grade reliability including HTGB, HTRB, and UHAST per AEC-Q101 Rev D requirements.
dv/dt immunity	Characterized up to 200 kV/µs-exceeds typical system-level noise margins in 800 V battery architectures.

Applications

On-Board Charger (OBC) PFC Stage

EV DC-DC Converter Primary Switch

Use Scenario: 3.3 kW to 11 kW bidirectional OBC with interleaved totem-pole PFC topology.

IC Role / Device Role / Timing Role: High-side switch in totem-pole configuration handling 800 V DC bus and 13 A RMS line current.

Use Value: 60 mΩ R_DS(on) and 79 µJ E_off reduce conduction + switching loss by >35% vs. comparable Si IGBTs, enabling >98% PFC efficiency at full load.

Use Scenario: 3.3 kW isolated DC-DC converter stepping down 800 V battery to 48 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side switching device in phase-shifted full-bridge (PSFB) topology operating at 100–200 kHz.

Use Value: Stable Q_G = 31 nC and low C_oss = 58 pF allow precise dead-time control and ZVS over wide load range, minimizing transformer stress.

Industrial Solar Inverter Boost Stage

HEV/EV Auxiliary Power Module

Use Scenario: 1500 V string inverter with dual-stage boost converting PV array output to 1200 V DC link.

IC Role / Device Role / Timing Role: Main boost switch operating at 30–50 kHz with 1200 V blocking and 36 A peak current.

Use Value: R_th(j-c) = 0.8 K/W and 175°C T_vj,max support compact heatsink design while sustaining 100% duty cycle at 40°C ambient.

Use Scenario: 1.5 kW 48 V–12 V DC-DC module powering infotainment, ADAS sensors, and lighting in hybrid platforms.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter with body-diode conduction during dead time.

Use Value: Body diode V_SD = 3.8 V and Q_rr = 116 nC eliminate need for Schottky parallel, reducing BOM count and layout area by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K (Wolfspeed)	R_DS(on) = 65 mΩ, Q_G = 27 nC, same PG-TO247-3 package	Higher R_DS(on) increases conduction loss by ~8% at 13 A; lower Q_G eases gate drive but reduces dv/dt margin	Prefer when gate drive strength is constrained and thermal margin allows higher R_DS(on).
STW65N120K6 (STMicroelectronics)	R_DS(on) = 60 mΩ, Q_G = 36 nC, AEC-Q101 qualified, same package	Higher Q_G increases gate loss and driver sizing requirement; slightly higher E_off (92 µJ)	Prefer when system prioritizes gate robustness over minimal switching loss.

Compared with C3M0065120K and STW65N120K6, AIMW120R060M1HXKSA1 offers the lowest E_off (79 µJ) and tightest V_GS(th) tolerance (±0.6 V), making it optimal for high-frequency, thermally constrained automotive converters where switching loss dominates total loss.

Availability

AIMW120R060M1HXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, EV DC-DC converters, and industrial solar inverters requiring stable component supply, AEC-Q101 compliance, and long-term automotive lifecycle support.

Supply support for AIMW120R060M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolSiC™ Gen1 automotive-qualified SiC MOSFET product line, designed specifically for high-efficiency, high-reliability traction and charging systems in battery electric and hybrid vehicles.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The absolute maximum gate-source voltage is -7 V to +23 V, but Infineon specifies +18 V as the recommended turn-on voltage and 0 V as the recommended turn-off voltage. Exceeding +18 V risks accelerated gate oxide degradation, especially at high junction temperatures; sustained operation above +20 V is not advised per Application Note AN2018-09.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. AIMW120R060M1HXKSA1 is designed for 0 V turn-off and has been validated for robust commutation without negative bias. Its threshold voltage remains stable at 3.6 V even at 175°C, ensuring safe turn-off margin. Negative gate voltage is unnecessary and may increase gate driver complexity without benefit.

Can the body diode be used for synchronous rectification in a bidirectional converter?

Yes. The device features a commutation-robust intrinsic body diode with Q_rr = 116 nC and Irrm = 5 A at 25°C, fully characterized for synchronous rectification. It eliminates the need for external parallel diodes in topologies like dual-active-bridge DC-DC converters, provided gate timing accounts for its soft recovery behavior.

What thermal interface material is recommended for the PG-TO247-3-41 package?

Infineon recommends a thermally conductive, electrically insulating interface material with ≤ 0.15 K·in²/W (≤ 0.24 K·cm²/W) thermal resistance, such as Henkel Loctite ABLESTIK® 84-7TP or Dow Corning TC-5630. Mounting torque must be 0.6 Nm ±10% using M3 screws to ensure uniform pressure and avoid die cracking or solder voiding.

AIMW120R060M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 13A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 5.6mA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

AIMW120R060M1HXKSA1 FAQ

1.How can I place an order for AIMW120R060M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMW120R060M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMW120R060M1HXKSA1 reliable?

The price and inventory of AIMW120R060M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMW120R060M1HXKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMW120R060M1HXKSA1 transactions.

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4.How is shipping managed for AIMW120R060M1HXKSA1?

AIMW120R060M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMW120R060M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMW120R060M1HXKSA1?

For technical support, including AIMW120R060M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMW120R060M1HXKSA1 requirements.

6.How does Aetrix verify that AIMW120R060M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMW120R060M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMW120R060M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMW120R060M1HXKSA1?

All AIMW120R060M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMW120R060M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMW120R060M1HXKSA1 part is unused and in its original packaging.

Return procedure for AIMW120R060M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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