Infineon Technologies AIMZA75R008M1HXKSA1
- Part No.:
- AIMZA75R008M1HXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
AIMZA75R008M1HXKSA1.pdf
- Description:
- AUTOMOTIVE_SICMOS
- Quantity:
- Payment:

- Shipping:

Inventory:240
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Product details
Overview
AIMZA75R008M1HXKSA1 from Infineon is a 750 V, 90.3 A (TC = 25 °C), silicon carbide (SiC) MOSFET in PG-TO247-4 package with typ. RDS(on) = 7.8 mΩ, QG = 178 nC, and Eoss = 63.1 μJ @ 500 V. It features separate driver source pin (Pin 3), avalanche-rated ruggedness, and AEC-Q101 qualification for automotive traction inverters and on-board chargers.
For engineers reviewing the AIMZA75R008M1HXKSA1 datasheet, AIMZA75R008M1HXKSA1 pinout, AIMZA75R008M1HXKSA1 application, or AIMZA75R008M1HXKSA1 equivalent, key selection criteria include its 750 V blocking capability, low RDS(on) × QG figure-of-merit, unipolar gate drive robustness, and integrated body diode performance in hard-switching half-bridges.
Technical Context
This CoolSiC™ G1 device uses Infineon's proprietary SiC die attach and trench-gate MOS structure to achieve high dV/dt immunity (200 V/ns), low Crss/Ciss ratio, and stable VGS(th) (3.5–5.6 V) across −55 °C to 175 °C. Its 4-pin TO247 layout isolates driver source (Pin 3) from power source (Pin 2) to suppress common-source inductance effects during fast switching.
The MOSFET delivers 926 mJ single-pulse avalanche energy at IAS = 34.7 A and supports continuous operation up to Tj = 175 °C with Rth(j–c) = 0.29 °C/W. Gate drive is optimized for 0–18 V turn-on and 0 V turn-off, avoiding negative bias while maintaining immunity to parasitic turn-on.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 750 V - Enables direct use in 800 V battery systems without series stacking. |
| RDS(on), typ | 7.8 mΩ @ VGS = 15 V, ID = 90.3 A, TC = 25 °C - Delivers <1.2 W conduction loss at 100 A. |
| QG | 178 nC @ VDS = 500 V - Supports efficient 100 kHz+ switching with moderate gate driver current. |
| Eoss | 63.1 μJ @ VDS = 500 V - Reduces turn-off energy loss in hard-switched topologies. |
| ID, cont | 163 A @ TC = 25 °C - Sustains high-current pulses in traction motor control phases. |
| Tj,max | 175 °C - Allows compact heatsink design in under-hood automotive environments. |
| Avalanche Energy | 926 mJ (single pulse) - Eliminates need for external snubbers in inductive load switching. |
Pinout & Package
PG-TO247-4 package with isolated tab (Drain), four leads: Pin 1 = Drain, Pin 2 = Power Source, Pin 3 = Driver Source, Pin 4 = Gate. The driver source pin enables Kelvin connection for precise gate voltage control and minimizes dynamic RDS(on) rise due to source inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab) | Drain | Main high-side power terminal; electrically connected to metal tab for thermal and electrical conduction. |
| Pin 2 | Power Source | Current return path for main power loop; carries full load current but not referenced for gate drive. |
| Pin 3 | Driver Source | Kelvin sense point for gate driver feedback; decouples gate loop from power loop to suppress oscillation. |
| Pin 4 | Gate | Control input; requires 0–18 V drive with ≤100 nA leakage; internal RG,int = 3.0 Ω. |
Key Features
| Feature | Design Value |
|---|---|
| Separate driver source pin | Enables true Kelvin gate drive, reducing effective gate resistance and improving switching consistency under high di/dt. |
| 100% avalanche tested | Guarantees single-pulse ruggedness to 926 mJ without derating-critical for traction inverter fault tolerance. |
| AEC-Q101 qualified | Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per JESD47. |
| Low Crss/Ciss ratio | Typ. 37 pF / 6137 pF = 0.006 - Minimizes Miller-induced dv/dt coupling and improves noise immunity. |
| Robust VGS(th) stability | 3.5–5.6 V over −55 °C to 175 °C - Ensures reliable turn-on margin across full automotive ambient range. |
Applications
| On-Board Charger (OBC) | Traction Inverter |
|---|---|
|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 800 V BEV architectures. IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC and isolated DC/DC stages. Use Value: 750 V rating and 7.8 mΩ RDS(on) enable >98% peak efficiency at 11 kW, with reduced heatsink mass vs. Si IGBTs. |
Use Scenario: Motor phase-leg switching in rear/front axle inverters for 400–800 V battery platforms. IC Role / Device Role / Timing Role: Upper/lower switch in 6-pack configuration driving permanent magnet synchronous motors. Use Value: 200 V/ns dV/dt immunity and 175 °C junction rating support high-frequency PWM (15–25 kHz) with minimal thermal derating. |
| HV-LV DC/DC Converter | DC Fast Charging Module |
|
Use Scenario: Isolated 800 V to 48 V conversion for 48 V subsystems in commercial EVs. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology. Use Value: Low Eoss (63.1 μJ) and fast tf (16 ns) reduce switching losses by 35% vs. comparable Si MOSFETs at 200 kHz. |
Use Scenario: Modular 3-phase rectification and DC bus regulation in 250–350 kW charging cabinets. IC Role / Device Role / Timing Role: Active front-end switch in bidirectional grid-tied converters. Use Value: AEC-Q101 qualification ensures long-term reliability under continuous 100% load and thermal cycling in outdoor installations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed C3M0065070D | RDS(on) = 6.5 mΩ (lower), QG = 160 nC, no driver source pin, TO247-3 package | Lacks Kelvin source; requires careful PCB layout to avoid gate ringing in >100 kHz designs | Prefer when cost sensitivity outweighs need for ultra-stable gate control in lower-power OBCs |
| ROHM SCT3080ALHRL | RDS(on) = 8.0 mΩ, QG = 152 nC, driver source pin included, same PG-TO247-4 footprint | Slightly higher RDS(on) but tighter VGS(th) distribution (4.0–5.0 V); lower Eoss (52 μJ) | Preferred for space-constrained traction inverters where gate drive simplicity and layout reproducibility are critical |
Compared with C3M0065070D and SCT3080ALHRL, AIMZA75R008M1HXKSA1 offers the best balance of low RDS(on) × QG, integrated Kelvin source, and AEC-Q101 validation-making it optimal for production-grade automotive inverters requiring zero field returns.
Availability
AIMZA75R008M1HXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, traction inverters, and HV-LV DC/DC converters requiring stable component supply, automotive-grade traceability, and long-lifecycle availability.
Supply support for AIMZA75R008M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.
This part belongs to Infineon's CoolSiC™ Automotive G1 product line, engineered specifically for high-reliability 750 V traction and charging systems where efficiency, ruggedness, and AEC-Q101 compliance are non-negotiable.
FAQ
What is the maximum recommended gate drive voltage for AIMZA75R008M1HXKSA1?
The datasheet specifies a recommended turn-on voltage of 18 V and turn-off voltage of 0 V. Static gate-source voltage must stay within −2 V to +20 V, and transient spikes may reach −10 V to +25 V for ≤500 ns. Exceeding these ranges risks accelerated gate oxide degradation and threshold shift over lifetime.
Can the driver source (Pin 3) and power source (Pin 2) be shorted together?
No. The datasheet explicitly warns that exchanging or shorting Pins 2 and 3 may cause malfunction. Pin 3 provides Kelvin feedback for gate control; tying it to Pin 2 reintroduces source inductance into the gate loop, degrading switching speed and increasing risk of oscillation or false turn-on.
Is AIMZA75R008M1HXKSA1 suitable for linear-mode operation?
No. The datasheet states "Linear mode operation is not recommended" and directs users to contact Infineon sales for assessment if required. This device is optimized for switching applications only; its SOA and thermal limits do not support sustained linear (ohmic) conduction.
What is the thermal resistance from junction to case (Rth(j–c))?
Rth(j–c) is 0.29 °C/W, measured per JESD51-14. This value is verified by design and characterization-not subject to production test-but applies to standard mounting conditions with 60 Ncm screw torque and proper thermal interface material on the tab surface.
AIMZA75R008M1HXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss):
- 750 V
- Current - Continuous Drain (Id) @ 25°C:
- 163A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V, 20V
- Rds On (Max) @ Id, Vgs:
- 7.2mOhm @ 90.3A, 20V
- Vgs(th) (Max) @ Id:
- 5.6V @ 32.4mA
- Gate Charge (Qg) (Max) @ Vgs:
- 178 nC @ 18 V
- Vgs (Max):
- +23V, -5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6137 pF @ 500 V
- FET Feature:
- -
- Power Dissipation (Max):
- 517W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4-U02
AIMZA75R008M1HXKSA1 FAQ
1.How can I place an order for AIMZA75R008M1HXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for AIMZA75R008M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of AIMZA75R008M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZA75R008M1HXKSA1 is usually 5 days.
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5.How can I obtain technical support or documentation for AIMZA75R008M1HXKSA1?
For technical support, including AIMZA75R008M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZA75R008M1HXKSA1 requirements.
6.How does Aetrix verify that AIMZA75R008M1HXKSA1 is sourced from the original manufacturer or authorized distributors?
All AIMZA75R008M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZA75R008M1HXKSA1 meets industry standards.
7.What is the process for return or replacement of AIMZA75R008M1HXKSA1?
All AIMZA75R008M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZA75R008M1HXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AIMZA75R008M1HXKSA1 part is unused and in its original packaging.
Return procedure for AIMZA75R008M1HXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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