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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZA75R016M1HXKSA1

Name: AIMZA75R016M1HXKSA1
Brand: Infineon Technologies
SKU: AIMZA75R016M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZA75R016M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZA75R016M1HXKSA1.pdf

Description:: SICFET N-CH 750V 89A PG-TO247-4

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Product details

Overview

AIMZA75R016M1HXKSA1 from Infineon is a 750 V, 16 mΩ typ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency automotive power conversion in on-board chargers and HV-LV DC-DC converters. It features 100% avalanche tested ruggedness, R_DS(on) × Q_fr optimized for hard-switching efficiency, and AEC-Q101 qualification for automotive use.

For engineers reviewing the AIMZA75R016M1HXKSA1 datasheet, AIMZA75R016M1HXKSA1 pinout, AIMZA75R016M1HXKSA1 application, or AIMZA75R016M1HXKSA1 equivalent, key selection criteria include its 750 V blocking capability, low 16 mΩ R_DS(on) at 18 V_GS, driver-source pin architecture for gate control robustness, and AEC-Q101 qualification for automotive traction and charging systems.

Technical Context

This CoolSiC™ G1 device uses unipolar gate driving with a high 4.3 V typical gate threshold voltage to suppress parasitic turn-on. Its internal body diode enables bidirectional operation in resonant topologies without external freewheeling diodes.

The PG-TO247-4 package integrates separate driver source (Pin 3) and power source (Pin 2) terminals to minimize common-source inductance, enabling precise gate control and reduced switching losses in high-di/dt applications up to 333 A peak drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Enables operation in 800 V nominal battery systems with 20% margin for transients.
R_DS(on), typ	16 mΩ @ V_GS = 18 V, T_j = 25 °C - Delivers low conduction loss in high-current OBC and DC-DC stages.
Q_G, typ	81 nC - Supports efficient gate drive design with moderate Miller charge (Q_GD = 20 nC).
Q_oss, typ @ 500 V	163 nC - Reduces turn-off energy loss (E_oss = 29.2 µJ), critical for soft-switching ZVS topologies.
I_DM, max	333 A - Sustains short-circuit pulses in automotive fault conditions per AEC-Q101 stress testing.
T_j max	175 °C - Allows high-temperature operation in under-hood power modules without derating.
C_rss/C_iss	17 pF / 2869 pF - Low Crss/Ciss ratio improves dv/dt immunity and reduces Miller-induced oscillation risk.

Pinout & Package

PG-TO247-4 package with isolated tab (drain), four leads: Pin 1 = Drain, Pin 2 = Power Source, Pin 3 = Driver Source, Pin 4 = Gate. Tab is electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-voltage power terminal; thermally coupled to heatsink via isolated metal tab.
Pin 2	Power Source	Source connection for main power loop; carries full load current but not referenced for gate drive.
Pin 3	Driver Source	Dedicated Kelvin source for gate driver return-eliminates common-source inductance impact on switching waveform fidelity.
Pin 4	Gate	Control input; requires 0–20 V operating range with ±10 V transient rating for robust gate driving.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 425 mJ at 15.9 A, enabling reliable operation under overvoltage faults without derating.
Driver source pin (Kelvin source)	Enables accurate gate voltage sensing independent of power loop inductance, reducing risk of false turn-on during fast dV/dt transitions.
Low R_DS(on) × Q_fr	Minimizes combined conduction and reverse recovery loss in hard-switched half-bridges used in OBC AC-DC stages.
AEC-Q101 qualified	Validated for automotive temperature cycling, humidity, and mechanical shock-suitable for under-hood EV power electronics.
V_GS(th) = 4.3 V typ	Provides noise margin against spurious turn-on while maintaining sufficient drive headroom for fast switching with 18 V gate bias.

Applications

On-Board Charger (OBC) – AC/DC Stage

HV-LV DC-DC Converter – Primary Side

Use Scenario: 11 kW bi-directional OBC using interleaved totem-pole PFC with 800 V battery interface.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch in hard-switched totem-pole bridge, handling 500 V AC line-to-line and 800 V DC bus.

Use Value: 16 mΩ R_DS(on) and low Q_oss reduce conduction and turn-off losses, enabling >98% PFC stage efficiency at 100 kHz switching.

Use Scenario: 3.3 kW isolated DC-DC converter stepping down 800 V battery to 48 V for ancillary loads.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz with ZVS.

Use Value: Low Q_fr (179 nC typ) and controlled body diode recovery minimize dead-time losses and improve ZVS window stability.

Bi-directional DC-DC for Vehicle-to-Grid (V2G)

Traction Inverter Auxiliary Stage

Use Scenario: Grid-connected bi-directional DC-DC module supporting ISO 15118-compliant V2G energy transfer.

IC Role / Device Role / Timing Role: Bidirectional switch in dual-active-bridge (DAB) topology with synchronous rectification on both sides.

Use Value: Integrated body diode with 3.9 V forward voltage enables efficient reverse conduction without external diodes, reducing component count and layout area.

Use Scenario: Auxiliary power supply for gate drivers and MCU in 800 V traction inverter subsystems.

IC Role / Device Role / Timing Role: High-voltage buck converter switch regulating 800 V battery down to 12 V for control electronics.

Use Value: 750 V V_DSS and 175 °C T_j,max allow direct connection to main battery rail without intermediate pre-regulation, simplifying BOM and improving reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0016090D	Same 750 V rating and 16 mΩ R_DS(on), but TO247-3L package lacks driver source pin; higher Q_oss (195 nC).	No Kelvin source limits gate control fidelity in high-di/dt OBC PFC; requires tighter layout and gate driver compensation.	Select when cost sensitivity outweighs need for ultra-low EMI and precise gate timing in production-grade automotive designs.
ROHM SCT3016AL	750 V, 16 mΩ, TO247-4L package with driver source, but lower I_DM (270 A vs. 333 A) and no AEC-Q101 certification.	Not qualified for automotive safety-critical charging systems; limited to industrial or non-safety-certified EV auxiliary supplies.	Select only for non-automotive industrial DC-DC where AEC-Q101 compliance is not required and peak current demand stays below 270 A.

Compared with C3M0016090D and SCT3016AL, AIMZA75R016M1HXKSA1 uniquely combines AEC-Q101 qualification, driver-source pin architecture, and 333 A peak current capability-making it the only option qualified for production automotive OBC and HV-LV DC-DC converters requiring full functional safety alignment.

Availability

AIMZA75R016M1HXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, HV-LV DC-DC converters, and vehicle-to-grid bidirectional power systems requiring stable component supply across automotive production lifecycles.

Supply support for AIMZA75R016M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to Infineon's CoolSiC™ G1 automotive MOSFET product line, engineered specifically for high-reliability, high-efficiency 750 V power conversion in electric vehicle on-board chargers and high-voltage DC-DC systems.

FAQ

What is the purpose of the driver source pin (Pin 3) in AIMZA75R016M1HXKSA1?

The driver source pin provides a dedicated Kelvin connection for the gate driver return path, isolating gate control from power loop inductance. This prevents voltage spikes induced by high di/dt from falsely turning on the MOSFET and ensures clean, predictable switching waveforms-critical in hard-switched totem-pole PFC stages.

Can AIMZA75R016M1HXKSA1 replace silicon IGBTs in existing 800 V traction inverters?

No-it is not rated for motor drive switching frequencies above 50 kHz in hard-switched configurations due to gate charge and thermal limitations. It is optimized for OBC and DC-DC converters, not traction inverter main bridges. For traction, Infineon's HybridPACK™ Drive modules are recommended.

Is the internal body diode suitable for continuous freewheeling in bidirectional DAB converters?

Yes-the body diode is fully characterized with V_SD = 3.9 V typ at 41.5 A and Q_fr = 179 nC typ, enabling efficient synchronous rectification in both directions. However, continuous conduction mode requires thermal validation at system-level junction temperatures up to 175 °C.

Does AIMZA75R016M1HXKSA1 require negative gate voltage for reliable turn-off?

No-its 4.3 V typical V_GS(th) and robust 0 V recommended turn-off voltage eliminate need for negative bias. The device is designed for unipolar 0 V to +18 V gate drive, simplifying driver design and reducing component count in automotive power modules.

AIMZA75R016M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 89A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 41.5A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 14.9mA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 2869 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 319W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

AIMZA75R016M1HXKSA1 FAQ

1.How can I place an order for AIMZA75R016M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZA75R016M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZA75R016M1HXKSA1 reliable?

The price and inventory of AIMZA75R016M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZA75R016M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZA75R016M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZA75R016M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZA75R016M1HXKSA1?

AIMZA75R016M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZA75R016M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZA75R016M1HXKSA1?

For technical support, including AIMZA75R016M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZA75R016M1HXKSA1 requirements.

6.How does Aetrix verify that AIMZA75R016M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZA75R016M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZA75R016M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZA75R016M1HXKSA1?

All AIMZA75R016M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZA75R016M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZA75R016M1HXKSA1 part is unused and in its original packaging.

Return procedure for AIMZA75R016M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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