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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZA75R020M1HXKSA1

Name: AIMZA75R020M1HXKSA1
Brand: Infineon Technologies
SKU: AIMZA75R020M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZA75R020M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZA75R020M1HXKSA1.pdf

Description:: AUTOMOTIVE_SICMOS

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Product details

Overview

AIMZA75R020M1HXKSA1 from Infineon is a 750 V, 20 mΩ (typ) silicon carbide MOSFET in PG-TO247-4 package with driver source pin (Pin 3), optimized for automotive-grade unidirectional and bidirectional on-board chargers and HV-LV DC-DC converters. It features 100% avalanche tested ruggedness, R_DS(on) × Q_fr of 2.7 µJ (typ), and AEC-Q101 qualification for operation up to 175 °C junction temperature.

For engineers reviewing the AIMZA75R020M1HXKSA1 datasheet, AIMZA75R020M1HXKSA1 pinout, AIMZA75R020M1HXKSA1 application, or AIMZA75R020M1HXKSA1 equivalent, key selection criteria include its 750 V blocking capability, low 20 mΩ R_DS(on) at 18 V gate drive, integrated driver source terminal for reduced common-source inductance, and validated performance in hard-switching half-bridges and soft-switching resonant topologies.

Technical Context

This CoolSiC™ Gen1 automotive MOSFET uses wide-bandgap SiC technology to deliver high dv/dt ruggedness (200 V/ns), low Crss/Ciss ratio (14/2217 pF), and high V_GS(th) (4.3 V typ) - enabling robust immunity against parasitic turn-on under unipolar gate driving. Its internal body diode supports reverse conduction with Q_fr = 135 nC (typ) at 1000 A/µs di/dt.

The PG-TO247-4 package separates driver source (Pin 3) from power source (Pin 2), reducing gate loop inductance and improving switching control fidelity. The die attach technology ensures thermal resistance R_th(j-c) = 0.54 °C/W, supporting continuous 75 A drain current at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Enables direct use in 800 V battery systems with 20% voltage margin per AEC-Q101 stress guidelines.
R_DS(on), typ	20 mΩ @ V_GS = 18 V, T_j = 25 °C - Delivers <1.3 W conduction loss at 32.5 A, critical for high-efficiency OBC stages.
Q_G, typ	67 nC - Supports efficient 100–200 kHz switching with standard gate drivers (e.g., 1EDF5673K); low Q_GD/Q_G ratio improves EMI behavior.
Q_oss, typ @ 500 V	133 nC - Reduces turn-off energy loss (E_oss = 23.9 µJ) in hard-switched ZVS-limited topologies.
I_DM, max	261 A - Sustains peak currents during transient load steps in bidirectional DC-DC without derating.
T_j operating range	−55 to +175 °C - Validated for under-hood automotive environments without active cooling constraints.
Avalanche energy E_AS	333 mJ - Confirmed single-pulse ruggedness enables reliable operation during bus fault transients.

Pinout & Package

Package: PG-TO247-4 with isolated tab (Drain), 4-terminal configuration enabling Kelvin source sensing. Tab is electrically connected to Drain (Pin 1). Pin 2 = Power Source, Pin 3 = Driver Source, Pin 4 = Gate.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	High-current output node; thermally coupled to heatsink via isolated metal tab - primary heat path.
Pin 2	Power Source	Carries main source current to external circuit; used for power return path in non-Kelvin configurations.
Pin 3	Driver Source	Kelvin connection for gate driver feedback - eliminates common-source inductance impact on switching speed and stability.
Pin 4	Gate	Control input; requires 0–18 V drive; internal R_G,int = 3 Ω limits ringing without external gate resistor.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 333 mJ, eliminating need for external snubbers in OBC fault conditions.
Low R_DS(on) × Q_fr	2.7 µJ (typ) - minimizes combined conduction and reverse recovery losses in bidirectional AC/DC stages.
Driver source pin (Kelvin source)	Enables precise gate voltage control independent of power loop voltage drop - critical for stable 200 kHz+ operation.
High V_GS(th) (4.3 V typ)	Reduces risk of unintended turn-on from noise or Miller coupling - allows safe unipolar (0/18 V) gate drive architecture.
AEC-Q101 qualified	Validated for automotive powertrain applications including traction inverters, OBC, and HV-LV DC-DC with full lifetime reliability data.

Applications

On-Board Charger (OBC) – AC/DC Stage

HV-LV DC-DC Converter – Isolated Bidirectional

Use Scenario: 11 kW bidirectional OBC converting grid AC to 800 V battery DC and vice versa.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC and CLLC resonant DC-DC stage.

Use Value: 750 V rating and 20 mΩ R_DS(on) enable >98% system efficiency at full load while maintaining <175 °C T_j with passive cooling.

Use Scenario: 3.3 kW isolated bidirectional DC-DC linking 800 V traction battery and 48 V subsystem.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology operating at 150–250 kHz.

Use Value: Low Q_oss (133 nC) and fast fall time (9 ns) reduce switching losses by 32% vs. comparable Si MOSFETs at 200 kHz.

Automotive Traction Inverter Auxiliary Stage

Industrial EV Charging Station – Front-End Rectifier

Use Scenario: Auxiliary power supply for gate drivers and MCU in 400–800 V traction inverters.

IC Role / Device Role / Timing Role: Switch in flyback or forward converter delivering isolated 15 V/2 A from main DC bus.

Use Value: AEC-Q101 qualification and −55 to +175 °C operation ensure reliability across vehicle lifetime without derating.

Use Scenario: Active front-end rectifier in liquid-cooled 240 kW charging station handling 1000 V DC bus.

IC Role / Device Role / Timing Role: Boost switch in three-phase Vienna rectifier with digital PWM control.

Use Value: 200 V/ns dv/dt ruggedness prevents false triggering during fast bus transients in multi-MW grid interfaces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75H106F6AG	750 V, 22 mΩ R_DS(on), TO-247-4LP package, no driver source pin; Q_G = 72 nC.	Lacks Kelvin source - requires careful layout to suppress common-source inductance in >150 kHz designs.	Preferred where cost sensitivity outweighs need for ultra-stable gate control in lower-frequency (<120 kHz) OBCs.
WOLFSPEED C3M0021120K	1200 V, 21 mΩ R_DS(on), TO-247-4 package, driver source pin; higher V_DSS increases margin but adds ~15% conduction loss at 800 V bus.	Over-spec'd voltage rating reduces system-level efficiency in 800 V architectures due to higher R_DS(on) temperature coefficient.	Recommended only when future 1200 V system scalability or enhanced lightning surge immunity is required.

Compared with STP75H106F6AG and C3M0021120K, AIMZA75R020M1HXKSA1 delivers optimal balance of 750 V rating, 20 mΩ conduction, Kelvin source integration, and AEC-Q101 validation - making it the most efficient and layout-robust choice for production automotive OBC and DC-DC modules.

Availability

AIMZA75R020M1HXKSA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, HV-LV bidirectional DC-DC converters, and traction inverter auxiliary supplies requiring stable component supply across extended product lifecycles.

Supply support for AIMZA75R020M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to Infineon's CoolSiC™ Gen1 automotive MOSFET product line, engineered specifically for high-reliability, high-efficiency power conversion in electric vehicle charging and traction systems.

FAQ

What is the maximum recommended gate drive voltage for AIMZA75R020M1HXKSA1?

The absolute maximum transient gate-source voltage is 25 V (tp ≤ 500 ns), but Infineon specifies 18 V as the recommended turn-on voltage for reliable long-term operation. Operating above 20 V increases gate oxide stress and accelerates threshold voltage drift over lifetime, especially at elevated junction temperatures.

Can the power source (Pin 2) and driver source (Pin 3) be shorted externally?

No - Infineon explicitly warns that exchanging or shorting Pins 2 and 3 may cause malfunction. Pin 2 carries high di/dt power return current, while Pin 3 provides low-noise gate reference; shorting them reintroduces common-source inductance and degrades switching stability and EMI performance.

Is AIMZA75R020M1HXKSA1 suitable for linear-mode operation?

No - the datasheet states "Linear mode operation is not recommended." This MOSFET is characterized and qualified for switching operation only. Linear-mode use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient Safe Operating Area (SOA) validation in that region.

Does this part include an integrated body diode, and what are its reverse recovery characteristics?

Yes - it features an integrated SiC Schottky body diode with V_SD = 3.9 V (typ) at 32.5 A and T_j = 25 °C. Its reverse recovery charge Q_fr is 135 nC (typ) at 1000 A/µs di/dt, with negligible tail current - enabling zero-voltage switching in resonant topologies without external diodes.

AIMZA75R020M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 32.5A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 11.7mA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 2217 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

AIMZA75R020M1HXKSA1 FAQ

1.How can I place an order for AIMZA75R020M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZA75R020M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZA75R020M1HXKSA1 reliable?

The price and inventory of AIMZA75R020M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZA75R020M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZA75R020M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZA75R020M1HXKSA1 transactions.

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4.How is shipping managed for AIMZA75R020M1HXKSA1?

AIMZA75R020M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZA75R020M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZA75R020M1HXKSA1?

For technical support, including AIMZA75R020M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZA75R020M1HXKSA1 requirements.

6.How does Aetrix verify that AIMZA75R020M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZA75R020M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZA75R020M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZA75R020M1HXKSA1?

All AIMZA75R020M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZA75R020M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZA75R020M1HXKSA1 part is unused and in its original packaging.

Return procedure for AIMZA75R020M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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