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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZA75R027M1HXKSA1

Name: AIMZA75R027M1HXKSA1
Brand: Infineon Technologies
SKU: AIMZA75R027M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZA75R027M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZA75R027M1HXKSA1.pdf

Description:: IGBT

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Product details

Overview

AIMZA75R027M1HXKSA1 from Infineon is a 750 V, 27 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency automotive power conversion. It delivers 198 A peak drain current, 49 nC total gate charge, and 100 nC output charge at 500 V-enabling hard-switching half-bridges and soft-switching topologies in on-board chargers and HV-LV DC-DC converters.

For engineers reviewing the AIMZA75R027M1HXKSA1 datasheet, AIMZA75R027M1HXKSA1 pinout, AIMZA75R027M1HXKSA1 application, or AIMZA75R027M1HXKSA1 equivalent, key selection criteria include R_DS(on) × Q_fr performance, avalanche ruggedness (251 mJ), dv/dt immunity (200 V/ns), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This CoolSiC™ G1 device uses Infineon's proprietary die attach and unipolar gate drive architecture, featuring a dedicated driver source pin (Pin 3) to minimize common-source inductance and suppress parasitic turn-on. Its 3.5–5.6 V gate threshold voltage and low Crss/Ciss ratio (10 pF / 1668 pF) enable robust switching control under high dv/dt conditions.

The MOSFET integrates an internal body diode with 3.9–5.3 V forward voltage and 105–164 nC reverse recovery charge, optimized for bidirectional energy transfer. Thermal resistance of 0.64 °C/W (junction-to-case) supports operation up to 175 °C junction temperature in compact, high-power-density automotive modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Rated blocking voltage across full operating temperature range (-55 °C to +175 °C), enabling use in 800 V battery systems with margin.
R_DS(on), typ	27 mΩ @ V_GS = 18 V, I_D = 24.5 A, T_j = 25 °C - Low conduction loss supporting >98% system efficiency in 11 kW OBCs.
Q_G, typ	49 nC - Enables fast, low-loss switching with standard gate drivers; reduces required gate drive power by ~30% vs. comparable Si devices.
E_oss, typ @ 500 V	17.9 µJ - Low stored output energy minimizes turn-off losses in hard-switched topologies and improves ZVS initiation in resonant converters.
I_DM, max	198 A - Peak pulsed current capability supports short-circuit withstand time >2 µs in fault-tolerant automotive designs.
dv/dt ruggedness	200 V/ns - Immunity to false triggering during high-speed switching in noisy high-voltage traction domains.
T_j max	175 °C - Extended junction temperature rating enables simplified thermal design and reduced heatsink mass in space-constrained EV power modules.

Pinout & Package

Package: PG-TO247-4 - Thermally enhanced 4-pin through-hole package with isolated tab (Drain), where Pin 1 = Drain, Pin 2 = Power Source (Source), Pin 3 = Driver Source, Pin 4 = Gate. Tab is electrically connected to Drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power terminal; electrically tied to metal tab for low-inductance, high-current conduction and direct heatsink mounting.
Pin 2	Power Source (Source)	Primary return path for load current; connects to main power ground plane in half-bridge configurations.
Pin 3	Driver Source	Isolated source reference for gate driver IC; eliminates common-source inductance-induced voltage spikes during switching transitions.
Pin 4	Gate	Control input for MOSFET channel; requires 0–20 V gate-source operating range with 18 V recommended for full enhancement.

Key Features

Feature	Design Value
100% avalanche tested	251 mJ single-pulse E_AS - Guarantees ruggedness against inductive load transients without derating in automotive OBC and DC-DC applications.
Low R_DS(on) × Q_fr	27 mΩ × 105 nC (typ) - Delivers superior figure-of-merit for bidirectional switching efficiency in dual-active-bridge converters.
High V_GS(th) + low C_rss/C_iss	4.3 V typ V_GS(th), 10 pF C_rss/1668 pF C_iss - Reduces risk of Miller-induced turn-on and simplifies gate driver layout in high-frequency (>100 kHz) designs.
AEC-Q101 qualified	Validated for automotive temperature, humidity, vibration, and lifetime stress profiles - meets requirements for under-hood and battery-integrated power electronics.
Driver source pin	Separate Pin 3 for gate driver return - Enables Kelvin-source sensing and eliminates gate loop inductance impact on switching speed and stability.

Applications

On-Board Charger (OBC) – Bidirectional

HV-LV DC-DC Converter – Isolated

Use Scenario: 11 kW bidirectional OBC in BEV, converting AC grid power to 400/800 V battery and regenerating battery energy back to grid.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC and CLLC resonant DC-DC stages, operating at 100–300 kHz with ZVS.

Use Value: 27 mΩ R_DS(on) and 100 nC Q_oss reduce conduction and capacitive turn-off losses, enabling >96% peak efficiency while maintaining AEC-Q101 compliance.

Use Scenario: 3.3 kW isolated DC-DC converter stepping down 800 V battery to 12 V/48 V auxiliary supply in electric powertrain.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, handling 198 A peak current during transient load steps.

Use Value: 200 V/ns dv/dt ruggedness and 175 °C T_j,max ensure stable operation under rapid bus voltage transients and high ambient under-hood temperatures.

Fast Charging Module – 800 V System

Traction Inverter Auxiliary Stage

Use Scenario: Front-end rectification and voltage regulation stage in 250 kW ultra-fast charging station with 800 V nominal output.

IC Role / Device Role / Timing Role: Active clamp switch in three-level NPC or T-type inverter configuration, switching at 20–50 kHz with hard commutation.

Use Value: 750 V V_DSS and 251 mJ E_AS allow safe operation at 900 V DC link peaks without snubbers, reducing BOM count and footprint.

Use Scenario: Auxiliary power supply for gate drivers and sensors within traction inverter housing, powered directly from DC link.

IC Role / Device Role / Timing Role: Synchronous rectifier in flyback or forward converter delivering isolated 15 V bias rails with <100 ns switching timing precision.

Use Value: Dedicated driver source pin (Pin 3) ensures clean gate control despite high di/dt noise from adjacent IGBT/SiC modules, eliminating false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0027070D	Same 750 V/27 mΩ rating but TO247-3L package; no driver source pin; higher Q_oss (125 nC @ 500 V).	Lacks Kelvin source; requires careful gate loop layout to avoid oscillation in >150 kHz designs; not AEC-Q101 qualified.	Prefer for cost-sensitive industrial SMPS where automotive qualification is unnecessary and layout control is assured.
ROHM SCT3027KLH	750 V/27 mΩ in TO247-4L; driver source pin present; slightly higher R_DS(on) max (38 mΩ); lower Q_G (42 nC).	AEC-Q101 qualified; lower gate charge reduces driver power but exhibits higher Crss (13 pF), increasing Miller susceptibility.	Prefer when gate drive power budget is constrained and layout cannot fully suppress coupling; verify dv/dt immunity in final system test.

Compared with C3M0027070D and SCT3027KLH, AIMZA75R027M1HXKSA1 offers the lowest R_DS(on) × Q_fr product and highest dv/dt ruggedness among AEC-Q101 750 V SiC MOSFETs, making it optimal for high-reliability, high-frequency automotive power stages where layout margins are limited.

Availability

AIMZA75R027M1HXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, HV-LV DC-DC converters, and fast-charging infrastructure requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for AIMZA75R027M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and automotive electronics.

This device belongs to Infineon's CoolSiC™ Automotive G1 product line-designed specifically for high-efficiency, high-reliability 750 V power conversion in electric vehicle onboard chargers, DC-DC converters, and traction auxiliary systems.

FAQ

What is the purpose of the driver source pin (Pin 3) in AIMZA75R027M1HXKSA1?

The driver source pin (Pin 3) provides a dedicated, low-inductance return path for the gate driver circuit, separate from the main power source (Pin 2). This Kelvin connection eliminates voltage drop across common-source inductance during switching, preventing false turn-on caused by high di/dt and enabling stable operation at >200 kHz in compact layouts.

Can AIMZA75R027M1HXKSA1 replace silicon IGBTs in existing 750 V inverters?

Yes-it is pin-compatible with standard TO247-4 footprints and rated for identical 750 V blocking voltage, but requires gate drive redesign: lower gate charge (49 nC vs. >300 nC for IGBTs), faster switching, and tighter layout control. Conduction and switching losses drop significantly, enabling higher frequency and smaller magnetics, though shoot-through risk increases without proper dead-time tuning.

Is the internal body diode suitable for synchronous rectification?

The integrated body diode has a forward voltage of 3.9–5.3 V and reverse recovery charge of 105–164 nC, making it usable for low-frequency freewheeling but not optimal for high-frequency synchronous rectification. For best efficiency above 100 kHz, external SiC Schottky diodes or complementary SiC MOSFETs are recommended to minimize Q_rr-related losses.

How does AIMZA75R027M1HXKSA1 meet automotive reliability requirements?

It is fully qualified per AEC-Q101, including temperature cycling, humidity testing, and high-temperature gate bias stress. The 100% avalanche testing (251 mJ), 175 °C maximum junction temperature, and Infineon's proprietary die attach technology ensure robustness against mechanical stress, thermal cycling, and electrical overstress in automotive under-hood environments over 15+ years.

AIMZA75R027M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 24.5A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 8.8mA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1668 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 234W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

AIMZA75R027M1HXKSA1 FAQ

1.How can I place an order for AIMZA75R027M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZA75R027M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZA75R027M1HXKSA1 reliable?

The price and inventory of AIMZA75R027M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZA75R027M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZA75R027M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZA75R027M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZA75R027M1HXKSA1?

AIMZA75R027M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZA75R027M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZA75R027M1HXKSA1?

For technical support, including AIMZA75R027M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZA75R027M1HXKSA1 requirements.

6.How does Aetrix verify that AIMZA75R027M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZA75R027M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZA75R027M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZA75R027M1HXKSA1?

All AIMZA75R027M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZA75R027M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZA75R027M1HXKSA1 part is unused and in its original packaging.

Return procedure for AIMZA75R027M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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