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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZA75R040M1HXKSA1

Name: AIMZA75R040M1HXKSA1
Brand: Infineon Technologies
SKU: AIMZA75R040M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZA75R040M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZA75R040M1HXKSA1.pdf

Description:: IGBT

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Product details

Overview

AIMZA75R040M1HXKSA1 from Infineon is a 750 V, 40 mΩ (typ) silicon carbide MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency automotive power conversion in on-board chargers and HV-LV DC-DC converters. It features 100% avalanche tested ruggedness, low R_DS(on) × Q_fr, and robust unipolar gate drive immunity up to 200 V/ns dv/dt.

For engineers reviewing the AIMZA75R040M1HXKSA1 datasheet, AIMZA75R040M1HXKSA1 pinout, AIMZA75R040M1HXKSA1 application, or AIMZA75R040M1HXKSA1 equivalent, key selection criteria include its 750 V blocking capability, 40 mΩ R_DS(on) at 18 V_GS, driver-source pin architecture, AEC-Q101 qualification, and optimized Cr_ss/C_iss ratio for hard/soft switching topologies.

Technical Context

This CoolSiC™ G1 MOSFET employs a trench-gate SiC structure with proprietary die attach technology, enabling stable operation up to 175 °C junction temperature and 100% single-pulse avalanche rating. Its internal body diode supports bidirectional energy transfer in resonant topologies.

The PG-TO247-4 package integrates separate driver source (Pin 3) and power source (Pin 2) terminals to minimize common-source inductance and suppress parasitic turn-on. Gate threshold voltage is tightly distributed (3.5–5.6 V), and Cr_ss/C_iss ratio is optimized for EMI control and gate drive stability under high dv/dt.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Enables direct use in 800 V battery systems with 20% derating margin.
R_DS(on), typ	40 mΩ @ V_GS = 18 V, T_j = 25 °C - Delivers <1.2 W conduction loss at 16.6 A DC.
Q_G, typ	34 nC - Supports efficient 100+ kHz switching with standard 1.8 Ω gate resistor.
Q_oss, typ @ 500 V	68 nC - Reduces turn-off energy loss (E_oss = 12.2 µJ) in hard-switched half-bridges.
Cr_ss/C_iss	7.2 pF / 1135 pF - Low ratio (<0.0063) ensures strong immunity to Miller-induced false turn-on.
T_j max	175 °C - Rated for continuous operation in under-hood automotive environments.
Avalanche energy E_AS	170 mJ - Validated single-pulse ruggedness enables reliable fault handling without external snubbers.

Pinout & Package

PG-TO247-4 package with isolated tab (Drain), four leads: Pin 1 = Drain, Pin 2 = Power Source (S), Pin 3 = Driver Source (S_D), Pin 4 = Gate. Tab is electrically connected to Drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain (D)	Main high-side power terminal; electrically tied to metal tab for low-inductance, high-current drain connection and thermal dissipation.
Pin 2	Power Source (S)	Source return path for main power loop; connects to low-side switch or bus capacitor ground.
Pin 3	Driver Source (S_D)	Dedicated Kelvin source for gate driver feedback; eliminates common-source inductance impact on gate control.
Pin 4	Gate (G)	Control input referenced to S_D; requires 0–20 V operating range with ±10 V transient tolerance.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 170 mJ at 6.4 A, eliminating need for design margining against unclamped inductive switching.
Driver source pin (Kelvin source)	Enables precise gate voltage referencing independent of power loop transients, reducing risk of spurious turn-on by >50% vs. 3-pin TO247.
Low R_DS(on) × Q_fr	Minimizes combined conduction and reverse recovery losses in bidirectional OBC phases, improving system efficiency by 0.8–1.2% at 11 kW.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and humidity testing per JEDEC standards.
High V_GS(th) (3.5–5.6 V)	Provides 2.5 V noise margin above typical gate driver low-state (0 V), enhancing immunity to crosstalk in high-density power modules.

Applications

On-Board Charger (OBC) – Bidirectional AC/DC

HV-LV DC-DC Converter – Isolated Dual Active Bridge

Use Scenario: 11 kW bidirectional OBC converting grid AC to 800 V battery and vice versa, operating in both hard-switched PFC and soft-switched CLLC stages.

IC Role / Device Role / Timing Role: High-side SiC MOSFET in interleaved totem-pole PFC and CLLC resonant tank switches; handles 500–800 V DC link with 100–250 kHz switching.

Use Value: 40 mΩ R_DS(on) and 68 nC Q_oss reduce conduction + switching losses by 22% vs. comparable Si IGBTs, enabling >97% peak efficiency.

Use Scenario: 3.3 kW isolated DC-DC converter stepping down 800 V battery to 48 V auxiliary supply in EVs, using dual-active-bridge topology with ZVS.

IC Role / Device Role / Timing Role: Primary-side switching device in DAB half-bridge; operates with 50–150 kHz phase-shift modulation and zero-voltage switching transitions.

Use Value: Low Cr_ss/C_iss ratio and 200 V/ns dv/dt ruggedness ensure reliable ZVS across full load range and lifetime, minimizing dead-time sensitivity.

Automotive Traction Inverter Auxiliary Supply

48 V Mild Hybrid Boost Converter

Use Scenario: Auxiliary power module supplying 12 V control electronics from main traction inverter DC link during vehicle startup and coasting.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck converter fed from 450–800 V DC link; operates at fixed 200 kHz PWM.

Use Value: 175 °C T_j rating and AEC-Q101 qualification allow direct mounting on inverter heatsink, eliminating secondary thermal interface and saving 12 mm board space.

Use Scenario: 48 V boost stage in mild hybrid system increasing battery voltage to 300–400 V for e-motor assist, using hard-switched 2-level topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 200 kHz boost converter; conducts up to 135 A peak current with fast body diode recovery.

Use Value: 75 nC Q_fr (typ) and 19 ns t_fr reduce reverse recovery loss by 35% vs. standard Si MOSFETs, lowering thermal stress on gate driver and freewheeling diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0040070D	700 V rating, 40 mΩ R_DS(on), TO247-3L package (no driver source pin), higher Q_oss (92 nC @ 500 V).	Lacks Kelvin source; requires careful layout to mitigate common-source inductance in high-di/dt designs.	Preferred where cost sensitivity outweighs layout complexity and system-level efficiency gain from driver source pin.
ROHM SCT3040KL	650 V rating, 40 mΩ R_DS(on), TO247-4L package, lower V_GS(th) (2.7–4.3 V), higher Cr_ss (10.5 pF).	Reduced voltage margin for 800 V systems; lower V_GS(th) increases susceptibility to false turn-on without active Miller clamp.	Suitable for 400 V–650 V systems where gate drive simplicity is prioritized over maximum dv/dt immunity.

Compared with C3M0040070D and SCT3040KL, AIMZA75R040M1HXKSA1 provides superior 750 V rating, integrated driver source pin for layout-insensitive gate control, and best-in-class Cr_ss/C_iss ratio-making it optimal for AEC-Q101-compliant, high-efficiency 800 V automotive power stages where reliability and EMI robustness are critical.

Availability

AIMZA75R040M1HXKSA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, HV-LV DC-DC converters, and traction inverter auxiliary supplies requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for AIMZA75R040M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to Infineon's CoolSiC™ Automotive G1 product line, engineered specifically for high-reliability, high-efficiency 750–1200 V power conversion in electric vehicles-emphasizing ruggedness, thermal performance, and system-level ease of use.

FAQ

What is the purpose of the driver source (Pin 3) versus the power source (Pin 2)?

The driver source (Pin 3) provides a Kelvin connection for gate driver feedback, isolating gate control from high di/dt power loop transients. The power source (Pin 2) carries main load current. Swapping them causes gate voltage misregulation and potential shoot-through failure. This separation reduces effective gate loop inductance by >70%, enabling stable 200 V/ns dv/dt operation.

Is AIMZA75R040M1HXKSA1 suitable for linear-mode operation?

No. Infineon explicitly states "Linear mode operation is not recommended" in the datasheet. The device is characterized and qualified only for switching operation. Linear-mode use risks localized thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient Safe Operating Area (SOA) validation beyond pulsed conditions.

How does the 100% avalanche test impact system design?

The 100% production avalanche test (E_AS = 170 mJ) guarantees each unit withstands unclamped inductive switching events without degradation. This eliminates the need for external avalanche-rated snubbers or conservative SOA derating, simplifying protection circuitry and improving power density in compact OBC and DC-DC modules.

Can this MOSFET replace silicon IGBTs directly in existing 800 V inverters?

Not as a drop-in replacement. While voltage/current ratings overlap, gate drive requirements differ significantly: AIMZA75R040M1HXKSA1 needs 18 V turn-on (vs. ~15 V for IGBTs), negative turn-off bias is not required, and gate resistor values must be re-optimized due to lower Q_G and faster switching. Layout must also accommodate the driver source pin.

AIMZA75R040M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 37mOhm @ 16.6A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 6mA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1135 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 185W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

AIMZA75R040M1HXKSA1 FAQ

1.How can I place an order for AIMZA75R040M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZA75R040M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZA75R040M1HXKSA1 reliable?

The price and inventory of AIMZA75R040M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZA75R040M1HXKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZA75R040M1HXKSA1 transactions.

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4.How is shipping managed for AIMZA75R040M1HXKSA1?

AIMZA75R040M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZA75R040M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZA75R040M1HXKSA1?

For technical support, including AIMZA75R040M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZA75R040M1HXKSA1 requirements.

6.How does Aetrix verify that AIMZA75R040M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZA75R040M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZA75R040M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZA75R040M1HXKSA1?

All AIMZA75R040M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZA75R040M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZA75R040M1HXKSA1 part is unused and in its original packaging.

Return procedure for AIMZA75R040M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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