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Infineon Technologies AIMZA75R060M1HXKSA1
- Part No.:
- AIMZA75R060M1HXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
AIMZA75R060M1HXKSA1.pdf
- Description:
- AUTOMOTIVE_SICMOS
- Quantity:
- Payment:
- Shipping:
Inventory:239
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Product details
Overview
AIMZA75R060M1HXKSA1 from Infineon is a 750 V, 60 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency automotive power conversion. It features 100% avalanche-tested ruggedness, typ. QG of 23 nC, Qoss of 54 nC at 500 V, and qualified to AEC-Q101. Used in hard-switching half-bridges and soft-switching topologies within on-board chargers and HV-LV DC-DC converters.
For engineers reviewing the AIMZA75R060M1HXKSA1 datasheet, AIMZA75R060M1HXKSA1 pinout, AIMZA75R060M1HXKSA1 application, or AIMZA75R060M1HXKSA1 equivalent, key selection criteria include RDS(on) × Qfr performance, dv/dt ruggedness (200 V/ns), gate threshold voltage (4.3 V typ), internal body diode characteristics, and dedicated driver source pin implementation for reduced common-source inductance.
Technical Context
This CoolSiC™ G1 device employs unipolar gate driving with high VGS(th) (3.5–5.6 V) and low Crss/Ciss ratio to suppress parasitic turn-on in high-dv/dt environments. Its die attach technology and optimized SiC die enable stable operation up to Tj = 175 °C and 750 V blocking capability across the full temperature range.
The PG-TO247-4 package integrates separate driver source (Pin 3) and power source (Pin 2) terminals to decouple gate loop inductance from power loop, directly supporting high-frequency switching (>100 kHz) in bidirectional OBC and isolated DC-DC stages while maintaining EMI control and thermal reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 750 V - Enables direct use in 800 V battery systems with 20% derating margin. |
| RDS(on), typ | 60 mΩ at VGS = 18 V, Tj = 25 °C - Delivers low conduction loss in high-current OBC primary-side switches. |
| QG, typ | 23 nC - Supports efficient gate drive design with moderate peak current requirements (~2–3 A). |
| Qoss, typ @ 500 V | 54 nC - Reduces turn-off energy loss and enables ZVS operation in resonant topologies. |
| dv/dt ruggedness | 200 V/ns - Ensures reliable operation under fast transient conditions without false triggering. |
| Tj max | 175 °C - Allows compact heatsink design in space-constrained automotive power modules. |
| IDM, max | 89 A - Sustains short-circuit pulses in fault-tolerant OBC and DC-DC protection schemes. |
Pinout & Package
Package: PG-TO247-4, thermally enhanced variant with isolated tab (Drain), four-terminal configuration enabling Kelvin source sensing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab) | Drain | High-current main drain connection; electrically tied to metal tab for low-inductance thermal path. |
| Pin 2 | Power Source | Main source terminal carrying load current; used for power return path in half-bridge leg. |
| Pin 3 | Driver Source | Dedicated Kelvin source for gate driver feedback-eliminates common-source inductance impact on switching waveform fidelity. |
| Pin 4 | Gate | Control input; requires gate resistor (RG) matching per layout to achieve specified td(on)/td(off) timing. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse EAS = 113 mJ at ID = 4.3 A, enabling robust overvoltage handling without external snubbers. |
| Low RDS(on) × Qfr | Optimizes trade-off between conduction loss and reverse recovery loss in bidirectional AC/DC and DC/DC stages. |
| Separate driver source pin | Reduces effective gate loop inductance by >50%, suppressing oscillation during hard switching at >100 kHz. |
| VGS(th) = 4.3 V (typ) | Provides noise immunity against false turn-on while remaining compatible with standard 15–18 V gate drivers. |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST per JEDEC standards. |
Applications
| On-Board Charger (OBC) Primary Switch | HV-LV DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Hard-switched interleaved boost stage converting 200–450 V battery to 800 V bus in bi-directional OBC. IC Role / Device Role / Timing Role: Main switching element in high-side position of dual-phase boost converter; operates at 50–100 kHz with 18 V gate drive. Use Value: 60 mΩ RDS(on) minimizes conduction loss at 30+ A RMS; 200 V/ns dv/dt rating ensures stability during rapid bus transients. |
Use Scenario: Isolated full-bridge DC-DC stage stepping down 800 V battery to 48 V auxiliary supply in EV power architecture. IC Role / Device Role / Timing Role: High-side switch in LLC resonant converter primary leg; driven with zero-voltage switching at 150–300 kHz. Use Value: Low Qoss (54 nC) and Co(er) = 77 pF reduce turn-off energy, enabling >97% peak efficiency at 5 kW output. |
| Bidirectional OBC Inverter Leg | Automotive Traction Inverter Auxiliary Stage |
|
Use Scenario: Bidirectional inverter leg in 11 kW OBC supporting V2G (vehicle-to-grid) export mode. IC Role / Device Role / Timing Role: Unidirectional switching element in active rectification path; conducts reverse current via integrated body diode. Use Value: Qfr = 57 nC (typ) and VSD = 3.9 V minimize forward recovery loss during commutation, reducing thermal stress. |
Use Scenario: Auxiliary power stage supplying gate drivers and control logic in main traction inverter subsystem. IC Role / Device Role / Timing Role: High-reliability 750 V switch regulating auxiliary 12 V rail from intermediate 400 V bus. Use Value: AEC-Q101 qualification and 175 °C Tj rating ensure continuous operation in engine bay ambient up to 125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed C3M0060070D | RDS(on) = 60 mΩ, but no driver source pin; QG = 25 nC; TO247-3L package. | Lacks Kelvin source, limiting high-frequency hard-switching performance above 75 kHz due to gate loop inductance. | Select when cost sensitivity outweighs need for >100 kHz operation or when gate driver layout allows low-inductance source routing. |
| ROHM SCT3060AL | RDS(on) = 69 mΩ, QG = 22 nC, includes driver source pin; same PG-TO247-4 footprint. | Lower dv/dt ruggedness (150 V/ns); not AEC-Q101 qualified-requires additional qualification for automotive deployment. | Prefer for industrial UPS or solar inverters where automotive qualification is unnecessary and layout constraints match. |
Compared with C3M0060070D and SCT3060AL, AIMZA75R060M1HXKSA1 uniquely combines AEC-Q101 qualification, driver source pin, and 200 V/ns dv/dt rating-making it the only option validated for production automotive OBC and DC-DC converters requiring simultaneous high reliability, high frequency, and high noise immunity.
Availability
AIMZA75R060M1HXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, HV-LV DC-DC converters, and bidirectional power conversion systems requiring stable component supply, automotive-grade lifecycle assurance, and traceable sourcing.
Supply support for AIMZA75R060M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
This part belongs to Infineon's CoolSiC™ Automotive Power Device G1 product line, engineered specifically for high-efficiency, high-reliability 750 V power conversion in electric vehicle charging and voltage conversion systems.
FAQ
Can AIMZA75R060M1HXKSA1 be used in non-automotive applications?
Yes-it is fully functional in industrial and renewable energy applications such as solar string inverters and UPS systems. However, its AEC-Q101 qualification, 175 °C junction rating, and automotive-optimized dynamic parameters make it especially valuable where high reliability, thermal resilience, or long service life are required-even outside automotive contexts.
What is the purpose of the driver source pin (Pin 3)?
The driver source pin provides a dedicated Kelvin connection to the MOSFET's source region, isolating gate drive return current from high di/dt power current paths. This eliminates voltage drop across common-source inductance, preventing gate oscillation and ensuring accurate gate voltage control during fast switching transitions.
Is the internal body diode suitable for continuous freewheeling?
Yes-the integrated SiC body diode supports continuous reverse conduction with VSD = 3.9 V (typ) at 11.1 A and Tj = 25 °C. Its Qfr = 57 nC (typ) and tfr = 10 ns enable efficient operation in synchronous rectification and bidirectional topologies without external diodes.
Why does the datasheet specify "source and driver source pins are not exchangeable"?
Pin 2 (power source) and Pin 3 (driver source) connect to physically distinct metallization regions on the die. Swapping them disrupts the Kelvin sensing path, introduces gate loop inductance, degrades switching performance, and may cause erratic turn-on/turn-off behavior or device failure under high di/dt conditions.
AIMZA75R060M1HXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 750 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V, 20V
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 11.1A, 20V
- Vgs(th) (Max) @ Id:
- 5.6V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 18 V
- Vgs (Max):
- +23V, -5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 779 pF @ 500 V
- FET Feature:
- -
- Power Dissipation (Max):
- 144W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4
AIMZA75R060M1HXKSA1 FAQ
1.How can I place an order for AIMZA75R060M1HXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for AIMZA75R060M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AIMZA75R060M1HXKSA1 reliable?
The price and inventory of AIMZA75R060M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZA75R060M1HXKSA1 is usually 5 days.
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AIMZA75R060M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AIMZA75R060M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AIMZA75R060M1HXKSA1?
For technical support, including AIMZA75R060M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZA75R060M1HXKSA1 requirements.
6.How does Aetrix verify that AIMZA75R060M1HXKSA1 is sourced from the original manufacturer or authorized distributors?
All AIMZA75R060M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZA75R060M1HXKSA1 meets industry standards.
7.What is the process for return or replacement of AIMZA75R060M1HXKSA1?
All AIMZA75R060M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZA75R060M1HXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AIMZA75R060M1HXKSA1 part is unused and in its original packaging.
Return procedure for AIMZA75R060M1HXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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