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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZA75R090M1HXKSA1

Name: AIMZA75R090M1HXKSA1
Brand: Infineon Technologies
SKU: AIMZA75R090M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZA75R090M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZA75R090M1HXKSA1.pdf

Description:: AUTOMOTIVE_SICMOS

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Product details

Overview

AIMZA75R090M1HXKSA1 from Infineon is a 750 V, 90 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, designed for high-efficiency automotive power conversion. It delivers 60 A peak drain current, 15 nC total gate charge, and 39 nC output charge at 500 V-enabling hard-switching half-bridges and soft-switching topologies in on-board chargers and HV-LV DC-DC converters.

For engineers reviewing the AIMZA75R090M1HXKSA1 datasheet, AIMZA75R090M1HXKSA1 pinout, AIMZA75R090M1HXKSA1 application, or AIMZA75R090M1HXKSA1 equivalent, key selection criteria include R_DS(on) × Q_fr performance, avalanche ruggedness (75 mJ), dv/dt immunity (200 V/ns), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This CoolSiC™ G1 device uses silicon carbide die with proprietary die attach technology and an integrated body diode. Its 3.5–5.6 V gate threshold voltage and low Crss/Ciss ratio (3.2 pF / 542 pF) suppress parasitic turn-on under unipolar gate driving while enabling robust operation up to 175 °C junction temperature.

The PG-TO247-4 package separates driver source (Pin 3) from power source (Pin 2), reducing common-source inductance and improving switching control fidelity. Gate drive is optimized for 0 V turn-off and +18 V turn-on, with transient gate voltage rated to ±25 V for ESD and layout-induced overshoot resilience.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Withstands full automotive 800 V bus systems with 20% margin; qualified over -55 °C to +175 °C junction range.
R_DS(on), typ	90 mΩ at V_GS = 18 V, T_j = 25 °C - Enables <1.2 W conduction loss at 40 A, critical for thermal management in compact OBC modules.
Q_G, typ	15 nC - Low gate charge reduces driver power demand and supports >100 kHz switching in resonant DC-DC stages.
Q_oss, typ @ 500 V	39 nC - Minimizes turn-off energy loss (E_oss = 6.9 µJ), directly improving efficiency in high-frequency hard-switched converters.
E_AS, single pulse	75 mJ - 100% avalanche tested; allows reliable operation during load dump or short-circuit transients without external snubbers.
dv/dt ruggedness	200 V/ns - Immune to false triggering from fast voltage transients in high-di/dt motor drive or PFC circuits.
T_j,max	175 °C - Supports derated continuous operation at elevated ambient temperatures in engine bay or under-hood locations.

Pinout & Package

PG-TO247-4 package with isolated tab (Drain), four leads: Pin 1 = Drain, Pin 2 = Power Source (Source), Pin 3 = Driver Source (Kelvin Source), Pin 4 = Gate. The dedicated Kelvin source minimizes gate loop inductance and stabilizes switching waveform integrity.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance thermal path.
Pin 2	Power Source	Carries full load current to external source node; used for power return path and thermal dissipation via PCB copper pour.
Pin 3	Driver Source (Kelvin)	Provides gate drive reference point isolated from power current path; eliminates source inductance impact on gate control timing.
Pin 4	Gate	High-impedance control input; requires 0 V to +18 V logic-level drive; internal gate resistance is 8 Ω for damping.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness to 75 mJ at 2.8 A, eliminating need for external clamping in fault-tolerant OBC designs.
Low R_DS(on) × Q_fr	Reduces reverse recovery losses in bidirectional DC-DC converters, enabling >98% peak efficiency in 800 V/400 V architectures.
High V_GS(th) (4.3 V typ)	Improves noise immunity against gate bounce during high-di/dt commutation, reducing risk of unintended turn-on in multi-phase systems.
Separate driver source pin	Enables precise gate voltage regulation independent of power loop voltage drop, critical for stable dV/dt control in SiC-based inverters.
AEC-Q101 qualified	Validated for automotive powertrain applications including traction inverters, on-board chargers, and 48 V–12 V DC-DC converters.

Applications

On-Board Charger (OBC) – Bidirectional

HV-LV DC-DC Converter – Isolated

Use Scenario: 11 kW bidirectional OBC converting AC grid to 800 V battery and vice versa using dual active bridge topology.

IC Role / Device Role / Timing Role: High-side SiC MOSFET in primary-side half-bridge; switches at 100–200 kHz with zero-voltage switching.

Use Value: 90 mΩ R_DS(on) and 39 nC Q_oss reduce conduction and turn-off losses by 32% vs. comparable Si IGBTs, enabling air-cooled OBC design.

Use Scenario: 3.3 kW isolated DC-DC converter stepping down 800 V battery to 12 V auxiliary supply in BEV platforms.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; operates in soft-switching mode with 150 kHz fundamental frequency.

Use Value: 750 V rating and 200 V/ns dv/dt immunity ensure reliable operation across wide input transients (e.g., load dump), minimizing system-level protection overhead.

Automotive Traction Inverter – Auxiliary Stage

Industrial EV Charging Station – Front-End PFC

Use Scenario: Auxiliary power module supplying 24 V control rail for main inverter gate drivers and MCU in 400 V/800 V hybrid systems.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck regulator; duty-cycle modulated at 300 kHz with tight voltage regulation.

Use Value: Kelvin source pin enables stable gate control despite 100+ A ripple current, maintaining <±1% output regulation under dynamic load steps.

Use Scenario: Three-phase totem-pole PFC stage in 150 kW depot charger, operating at 65 kHz with digital control.

IC Role / Device Role / Timing Role: Fast-switching leg in interleaved totem-pole configuration; handles 40 A RMS per phase with forced-air cooling.

Use Value: Best-in-class R_DS(on) × Q_oss metric cuts switching losses by 41% versus prior-gen SiC devices, raising system PF correction efficiency to 99.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0090070D	Same 750 V/90 mΩ rating but TO247-3L; no Kelvin source; higher Q_oss (48 nC); lower V_GS(th) (2.6 V).	Lacks driver source pin; requires careful gate loop layout to avoid oscillation; less suitable for high-di/dt OBC phases.	Select when cost sensitivity outweighs gate control precision; verify layout-induced ringing with >100 V/ns edge rates.
ROHM SCT3090ALHRL	750 V/90 mΩ in TO247-4; Kelvin source present; slightly higher R_DS(on) max (125 mΩ); lower Q_G (12.5 nC).	Lower gate charge improves driver efficiency but reduced avalanche energy (55 mJ) limits fault tolerance in unclamped topologies.	Prefer for space-constrained industrial SMPS where gate drive loss dominates; avoid in automotive safety-critical OBC primary side.

Compared with C3M0090070D and SCT3090ALHRL, AIMZA75R090M1HXKSA1 uniquely combines AEC-Q101 qualification, 75 mJ avalanche rating, and Kelvin-source-enabled gate fidelity-making it the only choice for production-grade automotive bidirectional power conversion requiring both reliability and waveform integrity.

Availability

AIMZA75R090M1HXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, HV-LV DC-DC converters, and traction auxiliary power modules requiring stable component supply across automotive OEM and Tier-1 production programs.

Supply support for AIMZA75R090M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, microcontrollers, and sensor solutions, with leadership in silicon carbide innovation since 2001.

This part belongs to the CoolSiC™ Automotive Power Device G1 product line, engineered specifically for high-reliability, high-efficiency 750 V power conversion in electric vehicle charging and traction systems.

FAQ

Can AIMZA75R090M1HXKSA1 be used with 12 V gate drive?

No. The recommended turn-on voltage is +18 V, and minimum gate threshold is 3.5 V. Driving at 12 V risks incomplete enhancement, increasing R_DS(on) beyond 117 mΩ and causing excessive conduction loss and thermal runaway at rated current. A dedicated 18 V gate driver with negative turn-off capability is required.

Is the tab (Pin 1) electrically isolated from other pins?

No. The metal tab is internally connected to the Drain (Pin 1) and must be mounted to a heatsink at the same potential as the drain node. Electrical isolation between tab and pins is not provided; creepage and clearance must be maintained per IEC 60664-1 for 750 V working voltage.

What is the maximum allowable gate resistor value for stable switching?

Based on gate charge (15 nC) and recommended 18 V drive, RG ≤ 10 Ω ensures td(on)/td(off) remain within datasheet-specified 6 ns / 13 ns. Higher values increase switching time and losses; values >18 Ω risk exceeding safe SOA limits during hard-switching transitions at >500 V bus.

Does the internal body diode support bidirectional conduction in ZVS topologies?

Yes. The integrated SiC body diode has 3.9–5.3 V forward voltage and 46–78 nC Q_fr, enabling efficient reverse conduction in phase-shifted full-bridge and dual-active-bridge topologies. However, its reverse recovery is unidirectional-only during turn-off-and must be managed with controlled di/dt.

AIMZA75R090M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 83mOhm @ 7.4A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 542 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 113W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

AIMZA75R090M1HXKSA1 FAQ

1.How can I place an order for AIMZA75R090M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZA75R090M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZA75R090M1HXKSA1 reliable?

The price and inventory of AIMZA75R090M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZA75R090M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZA75R090M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZA75R090M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZA75R090M1HXKSA1?

AIMZA75R090M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZA75R090M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZA75R090M1HXKSA1?

For technical support, including AIMZA75R090M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZA75R090M1HXKSA1 requirements.

6.How does Aetrix verify that AIMZA75R090M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZA75R090M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZA75R090M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZA75R090M1HXKSA1?

All AIMZA75R090M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZA75R090M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZA75R090M1HXKSA1 part is unused and in its original packaging.

Return procedure for AIMZA75R090M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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