Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZA75R140M1HXKSA1

Name: AIMZA75R140M1HXKSA1
Brand: Infineon Technologies
SKU: AIMZA75R140M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AIMZA75R140M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZA75R140M1HXKSA1.pdf

Description:: IGBT

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:230

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AIMZA75R140M1HXKSA1 from Infineon is a 750 V, 140 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with driver source pin, rated for 38 A peak drain current and qualified to AEC-Q101 for automotive power conversion. It features low R_DS(on) × Q_fr, high V_GS(th) (4.3 V typ), and Cr_ss/C_iss ratio optimized for robust unipolar gate driving in high-voltage on-board chargers and DC-DC converters.

For engineers reviewing the AIMZA75R140M1HXKSA1 datasheet, AIMZA75R140M1HXKSA1 pinout, AIMZA75R140M1HXKSA1 application, or AIMZA75R140M1HXKSA1 equivalent, key selection criteria include avalanche ruggedness (48 mJ), dv/dt immunity (200 V/ns), gate charge (13 nC), thermal resistance (1.74 °C/W), and driver-source pin isolation for reduced common-source inductance in hard-switching half-bridges.

Technical Context

This CoolSiC™ G1-generation SiC MOSFET uses Infineon's proprietary die attach technology and internal body diode for bidirectional operation in HV-LV DC-DC and OBC topologies. Its 750 V blocking capability, 175 °C max junction temperature, and 100% avalanche-tested construction enable reliable operation under harsh automotive transients.

The device integrates a dedicated driver source pin (Pin 3) separate from power source (Pin 2), enabling Kelvin-source gate control to minimize switching losses and suppress parasitic turn-on. Its Cr_ss/C_iss ratio of ~0.7% and high V_GS(th) provide inherent noise immunity in high-dv/dt environments typical of 800 V battery systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Sustains full 800 V battery system transients with margin; supports 400–800 V EV architectures without derating.
R_DS(on), typ	140 mΩ at V_GS = 18 V, T_j = 25 °C - Enables <1.2 W conduction loss at 9 A RMS in 11 kW OBC phase-legs.
Q_G, typ	13 nC - Allows fast 10–20 ns switching with standard 2 A gate drivers; reduces gate drive power in 100–200 kHz soft-switching.
E_oss, typ @ 500 V	5.1 µJ - Low stored output energy minimizes turn-off loss in ZVS resonant converters and improves light-load efficiency.
dv/dt ruggedness	200 V/ns - Withstands rapid voltage transients during commutation in half-bridge configurations without false triggering.
T_j,max	175 °C - Supports compact heatsinking in space-constrained traction auxiliary power modules with >10-year lifetime.
R_th(j-c)	1.74 °C/W - Enables 86 W continuous dissipation at T_C = 25 °C; critical for thermally constrained automotive under-hood mounting.

Pinout & Package

Package: PG-TO247-4 - Thermally enhanced 4-pin TO-247 variant with isolated driver source terminal and tab-connected drain for low-inductance, high-current PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Electrically connected to metal tab; primary high-side current path and thermal interface to heatsink.
Pin 2	Power Source (S)	Main source connection for power current return; carries full load current but not used for gate control.
Pin 3	Driver Source (S_DRV)	Kelvin source reference for gate driver IC; eliminates common-source inductance impact on switching waveform fidelity.
Pin 4	Gate	Control input for MOSFET channel; requires 0 V to 18 V logic-level drive; internal R_G,int = 16 Ω limits ringing.

Key Features

Feature	Design Value
100% avalanche tested	48 mJ single-pulse E_AS at 50 V - Guarantees ruggedness against inductive switching faults without external snubbers in OBC boost stages.
Low R_DS(on) × Q_fr	Typ. 57 nC @ 4.7 A - Reduces reverse recovery loss in bidirectional CLLC DC-DC converters operating at 200–300 kHz.
Dedicated driver source pin	Pin 3 isolated from Pin 2 - Enables precise gate voltage referencing independent of power loop voltage drop, critical for stable 100+ kHz ZVS operation.
AEC-Q101 qualified	Automotive-grade reliability - Validated for -55 °C to +175 °C operation, vibration, and humidity per ISO/TS 16949 requirements.
High V_GS(th)	4.3 V typ (3.5–5.6 V range) - Provides noise margin against spurious turn-on in high-noise 800 V battery domains with >2 V undershoot tolerance.

Applications

On-Board Charger (OBC) Boost Stage

HV-LV DC-DC Converter Primary Side

Use Scenario: 11 kW bidirectional OBC using interleaved boost topology with 400–800 V battery interface.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch in hard-switched boost cell; operates at 100–150 kHz with 500–750 V blocking.

Use Value: 140 mΩ R_DS(on) and 13 nC Q_G enable >98.5% peak efficiency while maintaining <100 °C case temperature at full load.

Use Scenario: 3.3 kW isolated dual-active-bridge (DAB) DC-DC converter for 800 V battery to 48 V subsystem supply.

IC Role / Device Role / Timing Role: Primary-side bridge leg switch in soft-switched DAB; handles 500 V bus with ZVS-assisted turn-on.

Use Value: 5.1 µJ E_oss and 28 nC Q_oss reduce turn-off loss by 35% vs. comparable Si MOSFETs, enabling 200 kHz operation with <1.5 W switching loss per device.

High-Voltage Auxiliary Power Module

Traction Inverter Auxiliary Supply

Use Scenario: 1.5 kW flyback-derived auxiliary supply powering gate drivers and MCU in 800 V traction inverters.

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback operating up to 750 V input with 100 kHz switching.

Use Value: 200 V/ns dv/dt rating and 175 °C T_j,max ensure stable operation during cold cranking and load dump events without derating.

Use Scenario: Compact 500 W isolated buck-boost converter supplying 12 V for traction inverter control electronics.

IC Role / Device Role / Timing Role: High-side switch in synchronous rectified topology; blocks 750 V during dead-time intervals.

Use Value: Internal body diode with 3.9 V V_SD enables efficient freewheeling during shoot-through protection, reducing need for external diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW75N140K6-EP	140 mΩ R_DS(on), 15 nC Q_G, no driver source pin, TO-247-3 package	Lacks Kelvin source; higher gate loop inductance limits >150 kHz hard-switching stability	Preferable for cost-sensitive 100 kHz OBC designs where layout-induced ringing is mitigated via PCB optimization.
IXYS IXTH75N140L2	140 mΩ R_DS(on), 16.5 nC Q_G, 150 °C T_j,max, TO-247-3	Lower max junction temperature and no AEC-Q101 qualification; higher Q_oss (45 nC)	Suitable for industrial DC-DC where automotive qualification and 175 °C operation are not required.

Compared with STW75N140K6-EP and IXTH75N140L2, AIMZA75R140M1HXKSA1 delivers superior dv/dt immunity (200 vs. 150 V/ns), lower E_oss (5.1 vs. ≥7.2 µJ), and AEC-Q101 validation-making it the only choice for production automotive OBC and HV-LV DC-DC requiring zero-field failure risk.

Availability

AIMZA75R140M1HXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, HV-LV DC-DC converters, and high-voltage auxiliary power modules requiring stable component supply across automotive Tier-1 production ramps and EV platform transitions.

Supply support for AIMZA75R140M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to Infineon's CoolSiC™ Automotive G1 product line-designed specifically for high-efficiency, high-reliability 750 V power conversion in electric vehicle charging and traction auxiliary systems.

FAQ

Can AIMZA75R140M1HXKSA1 be used in parallel configurations?

Yes, but only with matched gate drive loops and symmetrical PCB layout. The device's positive R_DS(on) temperature coefficient (1.7× increase from 25 °C to 175 °C) enables natural current sharing. However, the driver source pin must be routed separately for each device to avoid ground bounce coupling; mismatched source inductance causes dynamic current imbalance above 100 kHz.

What is the maximum recommended gate resistor value for hard-switching applications?

For 100–150 kHz hard-switching with 18 V gate drive, Infineon recommends R_G ≤ 4.7 Ω to maintain <15 ns rise/fall times while limiting overshoot. At 200 kHz, R_G = 2.2 Ω is optimal-verified by measured td(on)/tr of 6/7 ns and td(off)/tf of 13/13 ns with 1.8 Ω external R_G in the datasheet test circuit.

Is the internal body diode suitable for continuous freewheeling in bidirectional converters?

Yes-the body diode is fully rated for continuous reverse conduction up to 16 A at T_C = 25 °C (11 A at T_C = 100 °C), with V_SD = 3.9 V typ at 4.7 A and T_j = 25 °C. Its Q_fr of 46–57 nC supports efficient zero-current switching in CLLC topologies, but forward recovery time (7–20 ns) requires careful dead-time tuning to avoid shoot-through.

Does the driver source pin require a separate ground plane connection?

Yes-Pin 3 (driver source) must connect directly to the gate driver IC's source reference node via a low-inductance, dedicated trace, physically isolated from the main power source (Pin 2) return path. Sharing ground planes between Pins 2 and 3 defeats the Kelvin sensing benefit and reintroduces 5–15 V gate voltage error during high di/dt events.

AIMZA75R140M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 750 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 129mOhm @ 4.7A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 1.7mA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 351 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

AIMZA75R140M1HXKSA1 FAQ

1.How can I place an order for AIMZA75R140M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZA75R140M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZA75R140M1HXKSA1 reliable?

The price and inventory of AIMZA75R140M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZA75R140M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZA75R140M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZA75R140M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZA75R140M1HXKSA1?

AIMZA75R140M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZA75R140M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZA75R140M1HXKSA1?

For technical support, including AIMZA75R140M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZA75R140M1HXKSA1 requirements.

6.How does Aetrix verify that AIMZA75R140M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZA75R140M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZA75R140M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZA75R140M1HXKSA1?

All AIMZA75R140M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZA75R140M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZA75R140M1HXKSA1 part is unused and in its original packaging.

Return procedure for AIMZA75R140M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …