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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZH120R160M1TXKSA1

Name: AIMZH120R160M1TXKSA1
Brand: Infineon Technologies
SKU: AIMZH120R160M1TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZH120R160M1TXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZH120R160M1TXKSA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMZH120R160M1TXKSA1 from Infineon is a 1200 V, 17 A silicon carbide (SiC) trench MOSFET in PG-TO247-4-U03 package with Kelvin source pin, optimized for high-efficiency HV DC/DC converters and on-board chargers. It delivers R_DS(on) = 160 mΩ at 25°C (V_GS = 20 V), 1.5 µs short-circuit withstand time, and ultra-low C_rss/C_iss ratio (0.0029) to suppress parasitic turn-on in fast-switching topologies.

For engineers reviewing the AIMZH120R160M1TXKSA1 datasheet, AIMZH120R160M1TXKSA1 pinout, AIMZH120R160M1TXKSA1 application, or AIMZH120R160M1TXKSA1 equivalent, key selection criteria include gate drive voltage compatibility (20 V recommended), thermal resistance R_th(j-c) = 1.05 K/W, switching energy E_tot = 70 µJ at 25°C, and AEC-Q101 qualification for automotive power systems.

Technical Context

This SiC MOSFET uses Infineon's Gen1p chip technology with .XT die attach for enhanced thermal performance and a dedicated Kelvin source terminal to eliminate source inductance effects during gate control. Its high V_GS(th) (3.7–5.1 V) and low Crss/Ciss ratio enable robust unipolar gate driving without external Miller clamp circuits.

The device supports hard-switched operation up to 800 V bus voltage with 27 ns fall time and 37 µJ turn-off energy at 25°C, while maintaining 7.07 mm minimum creepage distance for reinforced insulation in 1200 V isolation systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables direct use in 800 V EV architectures with 50% voltage margin for transients and derating.
R_DS(on)	160 mΩ @ 25°C, 20 V - Delivers <1.7 W conduction loss at 17 A DC, enabling compact heatsink design.
Q_G(tot)	14 nC - Reduces gate driver power demand and enables use of lower-cost 1–2 W drivers.
E_tot	70 µJ @ 25°C - Lowers switching losses by >40% vs comparable Si IGBTs, reducing cooling requirements.
R_th(j-c)	1.05 K/W - Supports 109 W power dissipation at T_C = 25°C, critical for high-power density OBC modules.
t_SC	1.5 µs @ V_GS = 20 V - Provides deterministic fault response window for fast overcurrent protection circuitry.
V_SD	3.9 V @ 5 A - Body diode forward voltage enables synchronous rectification in bidirectional DC/DC without external diode.

Pinout & Package

Package: PG-TO247-4-U03 - 4-pin through-hole package with isolated Kelvin source terminal for precise gate control and minimized source inductance coupling.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side power terminal	Connected to HV DC bus; carries full load current and withstands 1200 V blocking.
2 – Source	Main power return path	Carries load current to ground/power rail; used for current sensing and thermal reference.
3 – Kelvin Sense Contact	Gate drive reference node	Provides low-inductance gate-source reference for accurate V_GS control, decoupling power loop from gate loop.
4 – Gate	Control input	Accepts 20 V turn-on signal; internal R_G,int = 4.8 Ω limits dV/dt-induced ringing.

Key Features

Feature	Design Value
Gen1p SiC trench technology	Improves R_DS(on) × Q_G figure-of-merit by 22% vs prior generation, directly increasing system efficiency at 100–200 kHz switching.
Kelvin source configuration	Eliminates source inductance impact on gate control, enabling stable 20 V gate drive without oscillation in >100 A/mm² current density layouts.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS stress-required for OBC and traction auxiliary systems.
Low C_rss/C_iss ratio (0.0029)	Reduces Miller-induced false turn-on risk, allowing gate resistors as low as 2 Ω without snubbers in 1200 V hard-switched converters.
.XT die attach	Lowers thermal resistance by 18% vs standard solder die attach, improving long-term power cycling lifetime in thermally cycled OBC applications.

Applications

On-Board Charger (OBC)

High-Voltage DC/DC Converter

Use Scenario: Bidirectional 11 kW OBC in BEV platforms converting AC grid to 400/800 V battery with PFC + CLLC stages.

IC Role / Device Role / Timing Role: Primary-side SiC switch in CLLC resonant tank operating at 100–250 kHz with zero-voltage switching.

Use Value: 70 µJ total switching energy reduces heatsink volume by 35% vs Si IGBTs, enabling integration into compact under-hood modules.

Use Scenario: 3.3 kW isolated DC/DC converter stepping down 800 V battery to 48 V for ADAS and infotainment subsystems.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with synchronous rectification on secondary side.

Use Value: 1.5 µs short-circuit withstand time allows deterministic fault shutdown before transformer saturation, meeting ISO 26262 ASIL-B timing constraints.

Auxiliary Power Supply (APS)

Traction Inverter Auxiliary Stage

Use Scenario: 1 kW auxiliary supply powering 12 V systems (ECUs, pumps, fans) from main traction battery in commercial EVs.

IC Role / Device Role / Timing Role: Switch in flyback or active-clamp forward converter operating at 200 kHz with wide input range (300–1000 V).

Use Value: 7.07 mm creepage distance satisfies reinforced insulation requirements per IEC 60664-1, eliminating need for slotting or potting.

Use Scenario: Isolated gate driver supply stage powering SiC half-bridge drivers in main traction inverter control unit.

IC Role / Device Role / Timing Role: Regulated high-side switch in buck-derived isolated supply delivering 15 V/1 A to gate drivers.

Use Value: R_DS(on) = 160 mΩ ensures <0.5 W conduction loss at full load, supporting continuous operation at 105°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K (Wolfspeed)	R_DS(on) = 65 mΩ (lower), but Q_G = 25 nC (higher); no Kelvin source; TO247-3L package.	Lacks Kelvin source → requires external Miller clamp for reliable 20 V gate drive in high-dI/dt layouts.	Prefer when lowest conduction loss dominates; avoid where layout parasitics limit gate control fidelity.
STP120N120S5 (STMicroelectronics)	R_DS(on) = 120 mΩ, Q_G = 16 nC, AEC-Q101 qualified, TO247-4L with Kelvin source.	Slightly higher R_DS(on) increases conduction loss by ~25%, but identical pinout and drive requirements.	Drop-in replacement if 120 mΩ is acceptable; verify thermal margin due to higher R_th(j-c) = 1.25 K/W.

Compared with C3M0065120K and STP120N120S5, AIMZH120R160M1TXKSA1 offers optimal balance of switching energy (70 µJ), Kelvin-source reliability, and thermal resistance (1.05 K/W), making it preferred for space-constrained, high-reliability automotive DC/DC designs where gate drive stability is critical.

Availability

AIMZH120R160M1TXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and auxiliary power supplies requiring stable component supply across automotive production lifecycles.

Supply support for AIMZH120R160M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

This device belongs to Infineon's CoolSiC™ 1200 V SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability traction and charging systems in electric vehicles and renewable energy infrastructure.

FAQ

What is the recommended gate drive voltage for AIMZH120R160M1TXKSA1?

The datasheet specifies 20 V as the recommended turn-on gate voltage to achieve the rated R_DS(on) of 160 mΩ and ensure robust immunity to dv/dt-induced false turn-on. Operating below 18 V increases R_DS(on) by up to 8% and reduces short-circuit withstand time to 2.5 µs, compromising reliability in fault conditions.

Does AIMZH120R160M1TXKSA1 require a negative gate voltage for turn-off?

No. The device is designed for unipolar gate drive with 0 V turn-off voltage. Its high V_GS(th) (min 3.7 V) and low Crss/Ciss ratio eliminate the need for negative bias, simplifying gate driver design and reducing component count in automotive OBC applications.

How does the Kelvin source pin improve switching performance?

The Kelvin source pin provides a dedicated low-inductance return path for the gate driver, isolating gate-loop dynamics from high-current source paths. This prevents source inductance from distorting V_GS during switching, enabling clean 20 V gate drive even with >100 A/µs di/dt in compact PCB layouts.

Is AIMZH120R160M1TXKSA1 suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) and matched threshold voltage (3.7–5.1 V) enable stable current sharing. Layout symmetry and individual gate resistors (≥2 Ω) are required to manage dynamic imbalance; the Kelvin source pin further enhances parallel stability by equalizing gate-source reference potential.

AIMZH120R160M1TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 5A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 109W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-11

AIMZH120R160M1TXKSA1 FAQ

1.How can I place an order for AIMZH120R160M1TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZH120R160M1TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZH120R160M1TXKSA1 reliable?

The price and inventory of AIMZH120R160M1TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZH120R160M1TXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZH120R160M1TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZH120R160M1TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZH120R160M1TXKSA1?

AIMZH120R160M1TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZH120R160M1TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZH120R160M1TXKSA1?

For technical support, including AIMZH120R160M1TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZH120R160M1TXKSA1 requirements.

6.How does Aetrix verify that AIMZH120R160M1TXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZH120R160M1TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZH120R160M1TXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZH120R160M1TXKSA1?

All AIMZH120R160M1TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZH120R160M1TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZH120R160M1TXKSA1 part is unused and in its original packaging.

Return procedure for AIMZH120R160M1TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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