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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZHN120R040M1TXKSA1

Name: AIMZHN120R040M1TXKSA1
Brand: Infineon Technologies
SKU: AIMZHN120R040M1TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZHN120R040M1TXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZHN120R040M1TXKSA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMZHN120R040M1TXKSA1 from Infineon is a 1200 V, 40 mΩ SiC trench MOSFET in PG-TO247-4-U05 package with Kelvin source (4-pin), rated for 55 A DC at T_C = 25°C and qualified to AEC-Q101 for automotive on-board chargers and high-voltage DC/DC converters.

For engineers reviewing the AIMZHN120R040M1TXKSA1 datasheet, AIMZHN120R040M1TXKSA1 pinout, AIMZHN120R040M1TXKSA1 application, or AIMZHN120R040M1TXKSA1 equivalent, key selection criteria include R_DS(on) @ 20 V_GS, Crss/Ciss ratio, short-circuit withstand time, thermal resistance R_th(j-c), and gate drive voltage requirements for unipolar operation.

Technical Context

This device implements a Gen1p CoolSiC™ trench architecture with optimized R_DS(on) × Q_G figure-of-merit and a high V_GS(th) (3.7–5.1 V) to suppress parasitic turn-on under high dv/dt. Its 4-pin configuration separates power and sense source paths to minimize gate loop inductance and improve switching control fidelity.

The MOSFET features ultra-low output capacitance (C_oss = 63 pF) and reverse transfer capacitance (C_rss = 3.6 pF), enabling >1 MHz switching in hard-switched topologies. It supports unipolar gate driving (0 V / +20 V) and delivers 1.5 µs short-circuit withstand time at 25°C with 2 Ω external gate resistor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables use in 800 V DC bus systems with 50% voltage margin for transients and derating.
R_DS(on)	40 mΩ (typ.) @ T_vj = 25°C, V_GS = 20 V - Delivers low conduction loss in high-power HV converters.
I_D,DC	55 A @ T_C = 25°C - Supports continuous 10–15 kW power stages with appropriate heatsinking.
R_th(j-c)	0.45 K/W (typ.) - Enables efficient thermal coupling to heatsink, critical for automotive under-hood environments.
C_rss/C_iss	3.6 pF / 1264 pF - Low ratio (0.0028) ensures immunity to Miller-induced false turn-on during fast switching.
t_SC	1.5 µs @ V_GS = 20 V, R_G,ext = 2 Ω - Allows robust fault handling without external desaturation detection in many OBC designs.
E_tot	146 µJ @ 800 V, 20 A - Reduces switching losses by ~35% vs. comparable Si IGBTs, lowering heatsink size and cooling cost.

Pinout & Package

Package: PG-TO247-4-U05 - 4-terminal TO-247 variant with isolated Kelvin source terminal for precise gate control and minimized source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side current path	Connected to HV DC bus; carries full load current and must be routed with low-inductance layout.
2 – Source (Power)	Power return path for drain current	Carries high di/dt; requires separate low-impedance connection to power ground plane.
3 – Kelvin Sense	Reference node for gate driver feedback	Provides gate driver with true source potential, eliminating voltage drop error in gate loop.
4 – Gate	Control input for channel modulation	Driven with 0 V / +20 V unipolar signal; sensitive to noise due to high dv/dt immunity design.

Key Features

Feature	Design Value
Sense pin (Kelvin source)	Enables accurate gate-source voltage regulation independent of power source inductance, improving switching consistency and reducing overshoot.
Gen1p chip technology	Delivers 15% lower R_DS(on) × Q_G FOM vs. prior CoolSiC™ generation, directly increasing power density in space-constrained OBC modules.
High V_GS(th) (3.7–5.1 V)	Prevents spurious turn-on during high dv/dt commutation events, eliminating need for negative gate bias in most automotive applications.
.XT die attach	Reduces thermal resistance by ~12% vs. standard solder die attach, extending lifetime under 175°C junction operation in auxiliary drives.
Minimum creepage distance 7.07 mm	Fulfills reinforced insulation requirements for 1200 V systems per IEC 60664-1, enabling direct use in HV battery interfaces without additional isolation barriers.

Applications

On-Board Charger (OBC)

High-Voltage DC/DC Converter

Use Scenario: Bidirectional AC/DC conversion in 400 V–800 V EV battery charging systems operating at 10–22 kW.

IC Role / Device Role / Timing Role: Primary high-side switch in totem-pole PFC and isolated LLC resonant stages.

Use Value: Enables >98% peak efficiency and 30% smaller magnetics through 1 MHz+ switching, meeting WLTP thermal constraints.

Use Scenario: Isolated 800 V-to-48 V or 800 V-to-12 V conversion for traction battery-powered vehicle subsystems.

IC Role / Device Role / Timing Role: High-side synchronous rectifier and primary switch in phase-shifted full-bridge or dual-active-bridge topologies.

Use Value: Reduces conduction + switching losses by 42% vs. Si MOSFET alternatives, allowing passive cooling in compact under-hood enclosures.

Auxiliary Power Supply

Traction Inverter Auxiliary Stage

Use Scenario: 12 V or 24 V auxiliary supply derived from main HV battery for ADAS, infotainment, and lighting.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck or flyback converter feeding low-voltage rail.

Use Value: Eliminates need for active cooling and reduces BOM count via high-efficiency single-stage conversion at 500 kHz.

Use Scenario: Dedicated 12 V supply for gate drivers, sensors, and MCU in traction inverters using 800 V battery packs.

IC Role / Device Role / Timing Role: Input-stage switch in high-reliability, AEC-Q100-compliant offline SMPS.

Use Value: Achieves >95% efficiency at full load while maintaining < 50°C case rise, supporting ASIL-B functional safety compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0040120K	R_DS(on) = 40 mΩ (same), but uses 3-pin TO247; no Kelvin source; C_rss/C_iss = 0.0035	Lacks dedicated sense pin → requires careful PCB layout and higher gate drive strength to maintain same EMI performance	Preferred where cost sensitivity outweighs layout complexity and gate driver optimization needs
IXFH40N120X	SiC planar MOSFET; R_DS(on) = 42 mΩ; t_SC = 1.2 µs; R_th(j-c) = 0.52 K/W; no Kelvin source	Lower short-circuit ruggedness and thermal performance; requires larger heatsink volume in sustained 175°C operation	Suitable for industrial DC/DC where AEC-Q101 qualification is not mandatory and thermal margin is available

Compared with C3M0040120K and IXFH40N120X, AIMZHN120R040M1TXKSA1 provides superior gate control fidelity via Kelvin source, tighter Crss/Ciss ratio for dv/dt immunity, and lower thermal resistance-making it optimal for automotive-grade, high-density, high-reliability OBC and DC/DC designs.

Availability

AIMZHN120R040M1TXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and auxiliary power supplies requiring stable component supply across automotive production lifecycles.

Supply support for AIMZHN120R040M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolSiC™ Gen1p high-voltage MOSFET product line, engineered specifically for automotive-grade 800 V battery systems requiring high efficiency, compact size, and AEC-Q101 reliability in on-board chargers and traction auxiliary supplies.

FAQ

What gate drive voltage is required for reliable operation?

The device is designed for unipolar gate driving with V_GS(on) = +20 V and V_GS(off) = 0 V. Using 20 V ensures minimum R_DS(on) and maximizes short-circuit ruggedness. Driving below 18 V increases conduction loss and reduces t_SC; negative gate bias is not required due to its high V_GS(th) and low Crss/Ciss ratio.

Does this MOSFET include an integrated body diode, and how does it perform?

Yes, it features a monolithic SiC body diode with V_SD = 3.9 V (typ.) at 20 A and 25°C. The diode exhibits low forward recovery charge (Q_fr = 179 nC) and fast recovery, enabling zero-voltage switching in LLC and reduced reverse recovery losses versus silicon diodes-critical for high-frequency OBC PFC stages.

Is the Kelvin source pin mandatory for operation?

No-it is not mandatory, but strongly recommended. Without Kelvin connection, source inductance introduces voltage drop that distorts effective V_GS, causing slower switching, increased E_on/E_off, and potential instability. The pin enables precise gate control and is essential to achieve datasheet-rated switching performance and thermal stability in production-grade OBC designs.

What is the maximum allowable junction temperature, and how is it validated?

The absolute maximum virtual junction temperature is 175°C, validated across the full operating range per AEC-Q101 stress testing. Thermal characterization confirms R_th(j-c) = 0.45 K/W (typ.), and the device is rated for continuous operation up to 175°C with derated current-enabling use in under-hood environments where ambient temperatures reach 105°C and heatsink temperatures approach 120°C.

AIMZHN120R040M1TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 6.4mA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1264 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 268W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-14

AIMZHN120R040M1TXKSA1 FAQ

1.How can I place an order for AIMZHN120R040M1TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZHN120R040M1TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZHN120R040M1TXKSA1 reliable?

The price and inventory of AIMZHN120R040M1TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZHN120R040M1TXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZHN120R040M1TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZHN120R040M1TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZHN120R040M1TXKSA1?

AIMZHN120R040M1TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZHN120R040M1TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZHN120R040M1TXKSA1?

For technical support, including AIMZHN120R040M1TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZHN120R040M1TXKSA1 requirements.

6.How does Aetrix verify that AIMZHN120R040M1TXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZHN120R040M1TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZHN120R040M1TXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZHN120R040M1TXKSA1?

All AIMZHN120R040M1TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZHN120R040M1TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZHN120R040M1TXKSA1 part is unused and in its original packaging.

Return procedure for AIMZHN120R040M1TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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