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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZHN120R080M1TXKSA1

Name: AIMZHN120R080M1TXKSA1
Brand: Infineon Technologies
SKU: AIMZHN120R080M1TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZHN120R080M1TXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZHN120R080M1TXKSA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMZHN120R080M1TXKSA1 from Infineon is a 1200 V, 31 A CoolSiC™ Gen1p silicon carbide trench MOSFET in PG-TO247-4-U05 package with Kelvin source (4-pin), featuring R_DS(on) = 80 mΩ at 25°C/20 V, 1.5 µs short-circuit withstand time, and optimized Crss/Ciss ratio to prevent parasitic turn-on-used in automotive on-board chargers and high-efficiency DC/DC converters.

For engineers reviewing the AIMZHN120R080M1TXKSA1 datasheet, AIMZHN120R080M1TXKSA1 pinout, AIMZHN120R080M1TXKSA1 application, or AIMZHN120R080M1TXKSA1 equivalent, key selection criteria include gate drive voltage compatibility (20 V recommended), thermal resistance (0.68 K/W), switching energy (92 µJ total at 25°C), and AEC-Q101 qualification for automotive HV systems.

Technical Context

This SiC MOSFET employs a trench-gate structure with Gen1p chip technology, delivering improved R_DS(on) × A figure-of-merit and reduced output capacitance (C_oss = 35 pF) for high-frequency operation up to 100 kHz in hard-switched topologies. Its 3.7–5.1 V gate threshold voltage and low Crss/Ciss ratio (≈0.003) suppress Miller-induced false turn-on under fast dv/dt conditions.

The device integrates a dedicated Kelvin source terminal (Pin 3) to eliminate source inductance impact on gate control, enabling precise switching timing and stable unipolar gate driving at 20 V. Thermal performance is enhanced by Infineon's .XT die attach, achieving junction-to-case thermal resistance of 0.68 K/W and supporting continuous operation up to 175°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports 800 V DC-link operation with 1.5× safety margin in EV traction auxiliary systems
R_DS(on)	80 mΩ @ 25°C/20 V - enables <1.7 W conduction loss at 31 A, reducing heatsink size in compact OBC designs
Q_G(tot)	24 nC - lowers gate driver power requirement and allows use of cost-effective 2-A peak drivers
E_tot	92 µJ @ 25°C - cuts switching losses by ~40% vs comparable Si IGBTs, enabling >98% efficiency in 3.3 kW DC/DC stages
t_SC	1.5 µs @ 20 V - provides robust fault handling in automotive-grade power stages without external desaturation detection
C_rss/C_iss	2 pF / 671 pF - ultra-low ratio (0.003) ensures immunity to dv/dt-induced shoot-through in half-bridge configurations
R_th(j-c)	0.68 K/W - enables 169 W power dissipation at 25°C case temperature, supporting high-power density packaging

Pinout & Package

Package: PG-TO247-4-U05 - 4-pin through-hole power package with isolated Kelvin source terminal, 7.07 mm minimum creepage distance for 1200 V isolation compliance.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side current path	Connected to HV DC bus; carries full load current and must be routed with low-inductance layout
2 – Source	Power return path	Carries main current return; separate from Kelvin source to avoid sensing error in gate loop
3 – Kelvin Sense	Gate reference for accurate V_GS control	Direct connection to source metallization minimizes L_source, eliminating Miller voltage overshoot during switching
4 – Gate	Control input	Driven with 20 V logic; requires low-impedance path to Kelvin source to maintain stable threshold margin

Key Features

Feature	Design Value
Gen1p SiC trench technology	Delivers 15% lower R_DS(on) × A FOM vs prior generation, directly improving conduction efficiency in 10–50 kHz OBC PFC stages
Kelvin source configuration	Enables stable 20 V gate drive without dynamic V_GS droop, eliminating need for active Miller clamp circuits
AEC-Q101 qualified	Validated for automotive under-hood environments including 1000-hour HTOL, ESD ≥2 kV HBM, and temperature cycling -55°C to 175°C
Low C_oss (35 pF)	Reduces capacitive turn-off losses and enables ZVS operation in resonant LLC converters above 300 kHz
High V_GS(th) (3.7–5.1 V)	Provides 2.5 V noise margin against false turn-on at 125°C, allowing simplified gate driver design without negative bias

Applications

On-Board Charger (OBC)

High-Voltage DC/DC Converter

Use Scenario: Bidirectional 11 kW OBC in BEV, operating in dual-phase interleaved PFC + CLLC resonant conversion.

IC Role / Device Role / Timing Role: Primary-side SiC MOSFET in PFC boost stage and CLLC primary bridge, switching at 100 kHz with 20 V gate drive.

Use Value: 80 mΩ R_DS(on) and 92 µJ E_tot enable >98.5% system efficiency while maintaining <85°C case temperature at full load.

Use Scenario: 3.3 kW isolated DC/DC converter stepping down 800 V battery to 48 V for ADAS domain controllers.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology, operating at 150 kHz with ZVS-assisted turn-on.

Use Value: Low C_oss (35 pF) and fast fall time (13 ns) reduce dead-time losses and improve ZVS window stability across 0–100% load.

Auxiliary Power Supply (APS)

Traction Inverter Auxiliary Stage

Use Scenario: 1.5 kW 48 V auxiliary supply for vehicle lighting, HVAC, and infotainment, fed from 400 V main bus.

IC Role / Device Role / Timing Role: Switching element in active clamp forward converter, operating at 200 kHz with unipolar 20 V gate drive.

Use Value: Kelvin source eliminates gate oscillation during high di/dt transitions, ensuring reliable start-up and light-load regulation.

Use Scenario: Isolated gate driver power supply within traction inverter housing, converting 800 V to ±15 V for IGBT/SiC gate drivers.

IC Role / Device Role / Timing Role: Primary switch in flyback converter, operating at 500 kHz with tight duty cycle control.

Use Value: AEC-Q101 qualification and 175°C max T_vj ensure uninterrupted operation in 105°C ambient inverter environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N120K6	R_DS(on) = 90 mΩ, Q_G = 28 nC, no Kelvin source, TO247-3L package	Lacks Kelvin sense; requires negative gate bias (-5 V) to suppress false turn-on in high dv/dt bridges	Select when cost sensitivity outweighs gate drive complexity and efficiency targets are ≤97.5%
Wolfspeed C3M0065120K	R_DS(on) = 65 mΩ, Q_G = 32 nC, Kelvin source, same PG-TO247-4 package	Lower R_DS(on) improves conduction loss but higher Q_G increases gate drive loss and EMI filtering burden	Select when thermal budget is constrained and gate driver can support ≥3 A peak current

Compared with STW48N120K6, AIMZHN120R080M1TXKSA1 offers superior dv/dt immunity and simpler gate drive; versus C3M0065120K, it trades 15 mΩ higher R_DS(on) for 8 nC lower Q_G, favoring medium-power OBCs where gate loss dominates over conduction loss.

Availability

AIMZHN120R080M1TXKSA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, high-voltage DC/DC converters, and auxiliary power supplies requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for AIMZHN120R080M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

This part belongs to Infineon's CoolSiC™ Gen1p 1200 V MOSFET product line, engineered specifically for high-efficiency, high-reliability traction auxiliary systems and EV charging infrastructure demanding AEC-Q101 qualification and 175°C operation.

FAQ

What gate drive voltage is required for reliable operation?

AIMZHN120R080M1TXKSA1 requires a nominal 20 V turn-on gate voltage (V_GS(on)) to achieve its rated 80 mΩ R_DS(on) and ensure sufficient threshold margin at high temperature. The maximum static gate-source voltage is +23 V; exceeding this risks permanent oxide damage. Gate drive must reference the Kelvin source pin-not the power source-to maintain control accuracy.

Is a negative gate voltage needed during turn-off?

No. Due to its elevated gate threshold voltage (3.7–5.1 V) and low Crss/Ciss ratio, AIMZHN120R080M1TXKSA1 supports unipolar gate driving with 0 V turn-off. Negative bias is not required to prevent parasitic turn-on, simplifying driver design and reducing component count in automotive OBCs and DC/DC converters.

How does the Kelvin source pin affect PCB layout?

The Kelvin source (Pin 3) must be routed separately from the power source (Pin 2) with minimal loop area and direct connection to the gate driver's ground reference. This isolates gate control from high di/dt source inductance, preventing dynamic V_GS undershoot that could cause incomplete turn-on or oscillation-critical for stable 100+ kHz operation in PFC stages.

What thermal derating applies above 25°C case temperature?

Power dissipation derates linearly from 169 W at T_C = 25°C to 84 W at T_C = 100°C, based on R_th(j-c) = 0.68 K/W. At 100°C case, maximum continuous drain current drops to 22 A (IDDC). Junction temperature must remain ≤175°C; thermal design must account for transient peaks using the specified short-circuit withstand time of 1.5 µs.

AIMZHN120R080M1TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 10A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 671 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 169W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-14

AIMZHN120R080M1TXKSA1 FAQ

1.How can I place an order for AIMZHN120R080M1TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZHN120R080M1TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZHN120R080M1TXKSA1 reliable?

The price and inventory of AIMZHN120R080M1TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZHN120R080M1TXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZHN120R080M1TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZHN120R080M1TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZHN120R080M1TXKSA1?

AIMZHN120R080M1TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZHN120R080M1TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZHN120R080M1TXKSA1?

For technical support, including AIMZHN120R080M1TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZHN120R080M1TXKSA1 requirements.

6.How does Aetrix verify that AIMZHN120R080M1TXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZHN120R080M1TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZHN120R080M1TXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZHN120R080M1TXKSA1?

All AIMZHN120R080M1TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZHN120R080M1TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZHN120R080M1TXKSA1 part is unused and in its original packaging.

Return procedure for AIMZHN120R080M1TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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