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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AO4402G

Name: AO4402G
Brand: Alpha & Omega Semiconductor Inc.
SKU: AO4402G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AO4402G

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AO4402G.pdf

Description:: MOSFET N-CH 20V 20A 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AO4402G from Alpha & Omega Semiconductor is a 20V N-channel Trench Power MOSFET optimized for high-efficiency DC/DC conversion and battery protection switching, featuring R_DS(ON) < 5.9 mΩ at V_GS = 4.5 V, 20 A continuous drain current, and SO-8 package with integrated body diode. It supports computing/server point-of-load (POL) regulation and single-cell Li-ion battery overcurrent cutoff.

For engineers reviewing the AO4402G datasheet, pinout, applications, or equivalent options, key selection criteria include low-voltage gate drive compatibility (2.5 V–4.5 V), avalanche ruggedness (100% UIS tested), thermal performance in FR-4 layouts (R_θJA = 75 °C/W), and body-diode recovery characteristics (Q_rr = 30 nC, t_rr = 17 ns).

Technical Context

This MOSFET uses trench-gate silicon process to achieve sub-6 mΩ on-resistance at logic-level gate drive, enabling efficient synchronous rectification in buck converters operating below 20 V input. Its 100% unclamped inductive switching (UIS) testing ensures robustness against transient energy during hard-switching events in power supply and load-switch applications.

The device integrates a fast-recovery body diode (t_rr = 17 ns, Q_rr = 30 nC) and exhibits stable R_DS(ON) across temperature (±15% drift from 25°C to 125°C). Gate charge parameters (Q_g = 45 nC max, Q_gd/Q_gs = 1.54) support moderate-frequency PWM control without excessive driver loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V and 19.5 V input rails in computing/server POL stages.
R_DS(ON) @ V_GS=4.5 V	< 5.9 mΩ - Enables ≤118 mW conduction loss at 20 A, critical for thermally constrained PCB layouts.
I_D (continuous)	20 A - Supports high-current load switches and primary-side synchronous FETs in compact 12 V–20 V DC/DC designs.
Q_g (total)	31–45 nC - Determines gate driver sizing; enables 500 kHz operation with <1 W driver dissipation using 5 V logic-level drive.
E_AS	80 mJ - Confirmed avalanche energy rating allows safe operation under inductive turn-off stress without snubbers.
T_J range	−55°C to +150°C - Validated for industrial and extended-temperature embedded systems with no derating up to 125°C ambient.

Pinout & Package

AO4402G is housed in a standard SOIC-8 (SO-8) surface-mount package with exposed drain pads on pins 1–4 and 6–8, source terminals on pins 5–7, and gate on pin 4. Thermal resistance R_θJA = 75 °C/W measured on 1 in² FR-4 board with 2 oz copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 6, 7, 8	Drain (D)	High-current output node; internally paralleled for low-inductance, low-R_DS(ON) conduction path.
5, 7	Source (S)	Power return path; dual-source pins reduce source inductance and improve switching stability.
4	Gate (G)	Logic-level control input; requires ≤4.5 V for full enhancement; gate resistance R_g = 1.2–3.6 Ω typical.

Key Features

Feature	Design Value
Trench Power MOSFET technology	Enables 20 V rating with <6 mΩ R_DS(ON), reducing conduction loss by >30% vs planar equivalents at same die size.
100% UIS tested	Guarantees minimum 80 mJ avalanche energy handling without parameter shift-critical for non-synchronous flyback or boost converters.
Body diode with t_rr = 17 ns	Minimizes reverse recovery loss and EMI in synchronous rectifier and half-bridge configurations operating above 200 kHz.
RoHS and Halogen-Free Compliant	Meets IPC-1752A material declaration requirements for consumer, computing, and industrial end-equipment compliance.

Applications

Battery Protection Circuit	Server Point-of-Load Regulator
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs for portable electronics. IC Role / Device Role / Timing Role: Low-side load switch controlling discharge path; activated/deactivated via system MCU GPIO. Use Value: Sub-6 mΩ R_DS(ON) limits voltage drop to <120 mV at 20 A, preserving battery runtime and minimizing thermal rise on compact PCBs.	Use Scenario: High-current synchronous rectifier in 12 V input → 1.2 V/30 A output buck converter for CPU/GPU VRMs. IC Role / Device Role / Timing Role: Secondary-side power FET in synchronous buck topology; driven by dedicated gate controller. Use Value: Fast body diode recovery (t_rr = 17 ns) reduces cross-conduction loss and improves efficiency by ≥0.8% at 500 kHz switching frequency.
USB-C Power Delivery Switch	Industrial 24 V DC Input Module
Use Scenario: Inrush current limiting and fault isolation in USB-C PD 3.0 power path controllers supporting 20 V/5 A delivery. IC Role / Device Role / Timing Role: High-side hot-swap FET with integrated current sensing feedback path. Use Value: 20 V V_DS rating matches USB-C PD maximum bus voltage; 100% UIS test ensures reliability during cable insertion transients.	Use Scenario: Reverse polarity and overvoltage protection in DIN-rail mounted PLC I/O modules powered from 24 V DC supplies. IC Role / Device Role / Timing Role: Low-R_DS(ON) series pass element in protected power entry stage. Use Value: R_DS(ON) < 5.9 mΩ at 4.5 V gate drive enables direct interface with 3.3 V microcontroller GPIO, eliminating level-shifter components.

Battery Protection Circuit

Server Point-of-Load Regulator

Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs for portable electronics.

IC Role / Device Role / Timing Role: Low-side load switch controlling discharge path; activated/deactivated via system MCU GPIO.

Use Value: Sub-6 mΩ R_DS(ON) limits voltage drop to <120 mV at 20 A, preserving battery runtime and minimizing thermal rise on compact PCBs.

Use Scenario: High-current synchronous rectifier in 12 V input → 1.2 V/30 A output buck converter for CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Secondary-side power FET in synchronous buck topology; driven by dedicated gate controller.

Use Value: Fast body diode recovery (t_rr = 17 ns) reduces cross-conduction loss and improves efficiency by ≥0.8% at 500 kHz switching frequency.

USB-C Power Delivery Switch

Industrial 24 V DC Input Module

Use Scenario: Inrush current limiting and fault isolation in USB-C PD 3.0 power path controllers supporting 20 V/5 A delivery.

IC Role / Device Role / Timing Role: High-side hot-swap FET with integrated current sensing feedback path.

Use Value: 20 V V_DS rating matches USB-C PD maximum bus voltage; 100% UIS test ensures reliability during cable insertion transients.

Use Scenario: Reverse polarity and overvoltage protection in DIN-rail mounted PLC I/O modules powered from 24 V DC supplies.

IC Role / Device Role / Timing Role: Low-R_DS(ON) series pass element in protected power entry stage.

Use Value: R_DS(ON) < 5.9 mΩ at 4.5 V gate drive enables direct interface with 3.3 V microcontroller GPIO, eliminating level-shifter components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS-T1-GE3	R_DS(ON) = 65 mΩ @ 4.5 V; SOT-23 package; 3 A rated; no UIS test data published.	Lower current capacity and higher on-resistance limit use to <5 A load switches or signal-level switching only.	Select when space-constrained PCBs require SOT-23 footprint and thermal budget permits higher conduction loss.
DMN2020LSD-13	R_DS(ON) = 4.5 mΩ @ 4.5 V; same SO-8 package; 20 V rating; Q_g = 32 nC; no published E_AS value.	Lacks documented UIS rating; unsuitable for inductive switching without external clamping.	Prefer where lowest possible R_DS(ON) is prioritized and circuit includes active overvoltage protection or snubbers.

Compared with AO4402G, Si2302DS-T1-GE3 trades significant on-resistance and current capability for ultra-small form factor, while DMN2020LSD-13 offers marginally lower R_DS(ON) but omits avalanche validation-making AO4402G the balanced choice for rugged, medium-power 20 V switching where reliability under transient stress is mandatory.

Availability

AO4402G is available at Aetrix Electronics and suitable for battery protection circuits, server point-of-load regulators, and USB-C power delivery modules requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for AO4402G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AO4402G belongs to AOS's logic-level N-channel TrenchMOS™ family, engineered specifically for high-current, low-voltage switching in space- and thermally-constrained power management applications.

FAQ

What is the maximum continuous drain current for AO4402G at 70°C ambient temperature?

The AO4402G supports 20 A continuous drain current at T_A = 25°C with proper PCB thermal design. At T_A = 70°C, derating applies per its thermal resistance: with R_θJA = 75 °C/W and T_J(MAX) = 150°C, the practical continuous current is ~13.3 A. This value assumes 1 in² FR-4 board with 2 oz copper; actual current depends on layout-specific cooling.

Does AO4402G support 2.5 V gate drive for full enhancement?

Yes, AO4402G is specified for R_DS(ON) < 7.3 mΩ at V_GS = 2.5 V, confirming full enhancement at logic-level voltages. Its gate threshold voltage (V_GS(th)) ranges from 0.45 V to 1.25 V, ensuring reliable turn-on with 2.5 V microcontroller outputs. The AO4402G maintains usable channel conduction down to 1.5 V V_GS, as shown in Figure 2 of its datasheet.

Is AO4402G suitable for synchronous rectification in a 500 kHz buck converter?

Yes, AO4402G is suitable for synchronous rectification at 500 kHz due to its low Q_g (31–45 nC), fast switching times (t_f = 21 ns, t_r = 15 ns), and optimized body diode (t_rr = 17 ns, Q_rr = 30 nC). These parameters minimize switching and reverse recovery losses. The AO4402G's R_DS(ON) stability across temperature further ensures predictable efficiency in high-frequency POL designs.

What is the avalanche energy rating of AO4402G and how is it validated?

The AO4402G has a guaranteed unclamped inductive switching (UIS) avalanche energy rating of 80 mJ, validated per JEDEC JESD24-11. Each unit undergoes 100% UIS testing at L = 0.1 mH, confirming robustness against transient inductive energy without parameter degradation. This makes AO4402G appropriate for non-synchronous topologies or fault conditions where inductive kickback occurs, unlike many MOSFETs lacking such screening.

Can AO4402G be used in parallel configurations for higher current handling?

Yes, AO4402G supports paralleling due to its positive temperature coefficient of R_DS(ON), which promotes current sharing across devices. Layout symmetry, matched gate drive paths, and individual source resistors are recommended to ensure balanced dynamic current distribution. The AO4402G's low gate charge (Q_g = 45 nC max) also simplifies driving multiple units from a single controller without excessive gate driver loading.

AO4402G Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id:: 1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

AO4402G FAQ

1.How can I place an order for AO4402G through Aetrix?

Please submit a Request for Quotation (RFQ) for AO4402G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AO4402G reliable?

The price and inventory of AO4402G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO4402G is usually 5 days.

3.What payment methods are accepted for AO4402G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO4402G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AO4402G?

AO4402G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AO4402G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AO4402G?

For technical support, including AO4402G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO4402G requirements.

6.How does Aetrix verify that AO4402G is sourced from the original manufacturer or authorized distributors?

All AO4402G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO4402G meets industry standards.

7.What is the process for return or replacement of AO4402G?

All AO4402G units undergo pre-shipment inspection (PSI). If there is an issue with AO4402G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AO4402G part is unused and in its original packaging.

Return procedure for AO4402G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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