Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AO4456

Part No.:
AO4456
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAO4456.pdf
Description:
MOSFET N-CH 30V 20A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,400

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AO4456 from Alpha & Omega Semiconductor is a 30V N-channel Trench MOSFET with monolithically integrated Schottky diode, optimized for low-side switching in SMPS and load-switching applications. It delivers RDS(ON) < 4.6 mΩ at VGS = 10 V, 20 A continuous drain current, and 100% UIS-tested ruggedness.

For engineers reviewing the AO4456 datasheet, pinout, applications, or equivalent options, key selection criteria include its soft-recovery body diode, low gate charge (Qg = 77 nC @ 10 V), SOIC-8 thermal performance (RθJA = 75 °C/W), and suitability for high-efficiency DC-DC converters and hot-swap circuits.

Technical Context

The AO4456 employs advanced trench-gate process technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its integrated Schottky diode enables soft reverse recovery (trr = 12–15 ns, Qrr = 20 nC) and eliminates external freewheeling diode needs in synchronous buck or OR-ing configurations.

Designed for unclamped inductive switching (UIS) reliability, the device supports repetitive avalanche energy up to 120 mJ (L = 0.1 mH) and features 100% Rg testing for gate robustness. Thermal design leverages SOIC-8 package with RθJL = 2.0 °C/W for efficient lead-to-junction heat transfer.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage for 24 V rail systems and automotive 12 V/24 V applications
ID (VGS = 10 V)20 A - Continuous conduction capability at TC = 70 °C, suitable for 15–18 A load-switch designs
RDS(ON) (VGS = 10 V)< 4.6 mΩ - Enables <1 W conduction loss at 20 A, critical for high-current point-of-load regulators
Qg (10 V)77 nC - Low gate charge reduces driver power and switching losses in 300–1000 kHz SMPS
trr / Qrr12–15 ns / 20 nC - Soft-recovery body diode minimizes voltage overshoot and EMI in synchronous rectification
RθJA75 °C/W - Measured on 1 in² FR-4 board; defines thermal derating for ambient-limited PCB layouts
EAS120 mJ - Avalanche-rated for reliable operation under inductive turn-off stress without snubbers

Pinout & Package

SOIC-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–8 arranged in standard dual-row configuration; Drain terminals are internally paralleled across pins 1, 2, 3, 4, 6, 7, and 8.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 6, 7, 8Drain (D)High-current output node; all connected to common drain metallization and thermal pad
5Source (S)Power return path; tied to ground plane in low-side switch configurations
G (pin not labeled; gate bond wire internal)Gate (G)Control input; driven by logic-level or dedicated gate driver (VGS(th) = 1.2–2.4 V)

Key Features

FeatureDesign Value
Integrated Schottky diodeEliminates external freewheeling diode in buck converters, reducing BOM count and layout area
Soft-recovery body diodeReduces EMI and voltage spikes during diode commutation in synchronous rectifiers
100% UIS testedGuarantees avalanche ruggedness for inductive load switching without derating
Low Qg/Qgd ratioQgd/Qg ≈ 21% improves Miller immunity and enables stable high-speed switching
Trench process + SOIC-8Combines low RDS(ON) density with industry-standard footprint and reflow compatibility

Applications

DC-DC Synchronous Buck ConverterHot-Swap / OR-ing Circuit

Use Scenario: High-efficiency 12 V to 3.3 V/5 V point-of-load conversion in server VRMs and telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: RDS(ON) < 4.6 mΩ cuts conduction loss by >60% vs. 40 V Schottky, enabling >95% efficiency at 20 A.

Use Scenario: Redundant 12 V power supply OR-ing in industrial PLCs and network switches.

IC Role / Device Role / Timing Role: Back-to-back configured low-side switch controlling power path direction and fault isolation.

Use Value: Integrated Schottky diode prevents reverse current flow while soft recovery suppresses transients during switchover.

Load Switch for USB PD / eMMCMotor Driver Half-Bridge Low-Side

Use Scenario: Inrush-limited 5 V/3.3 V power delivery to USB-C peripherals and embedded storage modules.

IC Role / Device Role / Timing Role: Controlled power enable switch with fast turn-on (tD(on) = 11 ns) and low RDS(ON).

Use Value: Gate threshold of 1.2–2.4 V ensures full enhancement from 3.3 V GPIO, eliminating level-shifter need.

Use Scenario: Low-side switch in 24 V brushed DC motor drivers for HVAC actuators and industrial valves.

IC Role / Device Role / Timing Role: PWM-controlled current sink in half-bridge topology, handling peak currents up to 20 A.

Use Value: 100% UIS rating withstands motor inductive kickback without external clamping components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7470PBFRDS(ON) = 5.2 mΩ @ 10 V; no integrated diode; TO-252 packageRequires external freewheeling diode; higher thermal resistance (RθJA = 62 °C/W)Preferred where discrete diode control or higher pulse current is needed
SiR872DP-T1-GE3RDS(ON) = 3.8 mΩ @ 10 V; no integrated diode; PowerPAK SO-8 packageLower RDS(ON) but lacks soft-recovery diode; requires layout redesign for diode placementSelected when maximum efficiency is prioritized over diode integration and EMI reduction

Compared with IRF7470PBF and SiR872DP-T1-GE3, the AO4456 uniquely combines integrated Schottky diode, soft recovery, and SOIC-8 compatibility-reducing component count and layout complexity in space-constrained SMPS and OR-ing designs without sacrificing ruggedness or thermal performance.

Availability

AO4456 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and motor driver subsystems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for AO4456 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AO4456 belongs to AOS's SRFET™ family of soft-recovery MOSFETs, engineered specifically for synchronous rectification and low-side switching where diode recovery behavior directly impacts system efficiency and EMI compliance.

FAQ

What is the maximum continuous drain current for AO4456 at 100°C case temperature?

The AO4456 supports 16 A continuous drain current at TC = 100°C per its Absolute Maximum Ratings table. This derating from the 20 A rating at TC = 70°C reflects thermal limits of the SOIC-8 package and must be verified against actual board-level thermal resistance in the target application. The AO4456 datasheet specifies this value under steady-state conditions with proper heatsinking.

Does AO4456 require a gate resistor for safe operation in 500 kHz switching applications?

Yes - while the AO4456 has low gate charge (77 nC @ 10 V), a gate resistor (typically 2–10 Ω) is recommended to dampen ringing, control dV/dt, and prevent shoot-through in half-bridge configurations. The AO4456's Qgd/Qg ratio (~21%) provides good Miller immunity, but external gate resistance remains essential for robust 500 kHz operation per AOS application guidelines.

Can AO4456 replace a standard 30 V Schottky diode in a buck converter output stage?

No - the AO4456 is a MOSFET with integrated Schottky diode, not a standalone diode. It replaces both the low-side switch *and* the freewheeling diode in synchronous buck topologies. Using it as a diode-only replacement would leave the gate uncontrolled and risk device failure. The AO4456 must be actively driven with appropriate gate voltage sequencing.

What is the body diode forward voltage of AO4456 at 5 A and 25°C?

The AO4456 body diode forward voltage is 0.5–0.7 V at IS = 1 A and 25°C; at 5 A, typical VSD rises to ~0.65 V (per Figure 14). This is significantly lower than standard silicon PN diodes (~0.9–1.2 V), contributing to reduced conduction loss in discontinuous conduction mode (DCM) operation. The AO4456's soft-recovery characteristic further enhances performance in this region.

Is AO4456 suitable for automotive under-hood applications operating at 125°C junction temperature?

Yes - the AO4456 is rated for TJ = –55 to +150°C and characterized across temperature. Its RDS(ON) increases only 1.8× from 25°C to 125°C (per Figure 4), and it maintains full UIS ruggedness at elevated temperatures. However, automotive use requires AEC-Q101 qualification - the AO4456 is not AEC-Q101 qualified, so it is suitable for non-safety-critical under-hood functions only with customer validation.

AO4456 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
SRFET™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
5185 pF @ 15 V
FET Feature:
Schottky Diode (Body)
Power Dissipation (Max):
3.1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AO4456 FAQ

1.How can I place an order for AO4456 through Aetrix?

Please submit a Request for Quotation (RFQ) for AO4456 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AO4456 reliable?

The price and inventory of AO4456 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO4456 is usually 5 days.

3.What payment methods are accepted for AO4456?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO4456 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AO4456?

AO4456 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AO4456 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AO4456?

For technical support, including AO4456 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO4456 requirements.

6.How does Aetrix verify that AO4456 is sourced from the original manufacturer or authorized distributors?

All AO4456 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO4456 meets industry standards.

7.What is the process for return or replacement of AO4456?

All AO4456 units undergo pre-shipment inspection (PSI). If there is an issue with AO4456, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AO4456 part is unused and in its original packaging.

Return procedure for AO4456:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AO4456 Tags

  • AO4456
  • AO4456 PDF
  • AO4456 Datasheet
  • AO4456 Specifications
  • AO4456 Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AO4456
  • Buy AO4456
  • AO4456 Price
  • AO4456 Distributor
  • AO4456 Supplier
  • AO4456 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER