Alpha & Omega Semiconductor Inc. AO6409
- Part No.:
- AO6409
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
AO6409.pdf
- Description:
- MOSFET P-CH 20V 5.5A 6TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:14
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Product details
Overview
AO6409 from Alpha & Omega Semiconductor is a -20V, -5.5A P-channel MOSFET in TSOP-6 package with RDS(ON) < 41 mΩ at VGS = -4.5 V, gate-threshold voltage of -0.57 V (typ), and ESD protection. It serves as a low-voltage load switch in portable power management circuits requiring 1.8 V logic-level drive.
For engineers reviewing the AO6409 datasheet, pinout, applications, or equivalent options, key selection factors include its trench-based low-RDS(ON) performance, gate charge of 9.3 nC (typ), body-diode reverse recovery time of 26 ns (typ), and thermal resistance RθJA of 48°C/W on standard FR-4 board.
Technical Context
The AO6409 employs advanced trench-gate technology to achieve enhanced conduction efficiency and fast switching response. Its gate threshold voltage range (-0.3 V to -0.9 V) enables reliable turn-on with 1.8 V–2.5 V control signals, and its low Qgd/Qg ratio (2.2/9.3 nC) supports stable operation in high-frequency PWM load switching.
Thermal design is supported by a junction-to-lead resistance of 37°C/W (typ) and a maximum junction temperature of 150°C. The device's body diode exhibits VSD = -0.64 V (typ) at -1 A and trr = 26 ns (typ) under IF = -5.5 A, dI/dt = 500 A/µs conditions - critical for synchronous rectification and bidirectional current handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for low-side or high-side load switching in ≤20 V systems. |
| ID (VGS=-4.5 V) | -5.5 A - Continuous drain current rating enabling ≥5 W load switching at 12 V input with minimal conduction loss. |
| RDS(ON) | < 41 mΩ at VGS = -4.5 V - Low on-resistance reduces I²R losses in battery-powered and USB PD applications. |
| VGS(th) | -0.57 V (typ) - Enables full enhancement with 1.8 V logic, supporting direct interface with low-voltage microcontrollers. |
| Qg | 9.3 nC (typ) - Gate charge value determines required driver strength and switching loss in 100–500 kHz DC-DC or load-switch designs. |
| trr | 26 ns (typ) - Body-diode reverse recovery time impacts efficiency and EMI in flyback or buck-boost topologies with freewheeling paths. |
| RθJA | 48°C/W - Thermal resistance on 1 in² 2 oz copper FR-4 defines safe continuous power dissipation (≤1.3 W at 70°C ambient). |
Pinout & Package
AO6409 is housed in a thermally enhanced TSOP-6 surface-mount package with exposed drain pad for improved heat dissipation. Pin 1 is marked with a dot; pins are arranged in two rows (1–3 top, 4–6 bottom) with Drain connected to pins 1, 2, 3, and 6.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 6 | Drain (D) | High-current output node; electrically and thermally tied to exposed pad - must be connected to power plane for thermal management. |
| 4 | Source (S) | Return path for load current; connects to system ground or negative rail in high-side switch configurations. |
| 5 | Gate (G) | Control input; requires low-impedance drive due to 13 Ω gate resistance and 9.3 nC total charge. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced down to VGS = -1.8 V - eliminates need for gate boosters in 1.8–3.3 V control systems. |
| Trench MOSFET architecture | Delivers <41 mΩ RDS(ON) at -4.5 V while maintaining low Qg/Qgd ratio for efficient hard-switching. |
| ESD protection | HBM-rated per JESD22-A114 - withstands ±2 kV ESD events without external protection circuitry. |
| Low thermal resistance | RθJL = 37°C/W (typ) - enables higher power density in space-constrained portable PCB layouts. |
Applications
| Battery-Powered Load Switch | USB Type-C Power Delivery |
|---|---|
Use Scenario: Enabling/disabling power to peripherals (e.g., USB-C accessories, sensors) in smartphones and tablets. IC Role / Device Role / Timing Role: P-channel high-side load switch controlled by baseband processor GPIO. Use Value: Low 1.8 V gate threshold allows direct MCU control; <41 mΩ RDS(ON) limits voltage drop to <230 mV at 5.5 A, preserving bus voltage compliance. | Use Scenario: VCONN power switch and dead-time control in USB-C port controllers. IC Role / Device Role / Timing Role: Bidirectional current-handling switch managing VCONN supply and CC line biasing. Use Value: Fast 26 ns body-diode recovery and low Qgd ensure clean transitions during hot-plug detection and orientation switching. |
| Industrial Sensor Node Power Gating | LED Backlight Dimming Driver |
Use Scenario: Power gating for ultra-low-power sensor nodes in IIoT edge devices operating on coin-cell or energy-harvested sources. IC Role / Device Role / Timing Role: Low-quiescent-current load switch isolating analog front-end during sleep mode. Use Value: IGSS ≤ ±10 µA ensures leakage-induced battery drain remains below 1 µA - extending multi-year operational life. | Use Scenario: PWM-controlled current sink for white LED strings in automotive interior lighting and portable displays. IC Role / Device Role / Timing Role: Synchronous high-side switch replacing discrete BJT+resistor networks in constant-current drivers. Use Value: 9.3 nC Qg enables clean 10–20 kHz dimming without shoot-through risk; RDS(ON) stability over -55°C to 125°C ensures consistent brightness across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2305DS | RDS(ON) = 48 mΩ @ -4.5 V; Qg = 7.5 nC; TSOP-6 package; VGS(th) = -0.7 V (typ) | Slightly higher conduction loss but lower gate charge - better for very high-frequency (>1 MHz) switching where drive loss dominates. | Prefer Si2305DS when gate driver output impedance is high or switching frequency exceeds 500 kHz. |
| DMG1012T | RDS(ON) = 38 mΩ @ -4.5 V; Qg = 10.5 nC; same TSOP-6 footprint; VGS(th) = -0.5 V (typ) | Marginally lower RDS(ON) but higher Qg - trade-off favors conduction-limited applications with moderate switching speed. | Choose DMG1012T when minimizing I²R loss at 5–6 A DC loads is prioritized over gate drive efficiency. |
Compared with Si2305DS and DMG1012T, the AO6409 offers the best balance of low gate threshold (-0.57 V typ), sub-41 mΩ RDS(ON), and moderate 9.3 nC Qg, making it optimal for 1.8–3.3 V logic-controlled load switching up to 500 kHz with thermal constraints under 1.3 W.
Availability
AO6409 is available at Aetrix Electronics and suitable for battery-powered load switching, USB Type-C power delivery, industrial sensor node power gating, and LED backlight dimming requiring stable component supply and long-term production continuity.
Supply support for AO6409 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, industrial, and automotive markets.
The AO6409 belongs to AOS's logic-level P-channel TrenchMOS™ family, engineered specifically for low-voltage, high-density power management in portable and USB-C-enabled devices where gate drive simplicity and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current for AO6409 at 70°C ambient temperature?
The AO6409 supports -4.2 A continuous drain current at TA = 70°C, derated from its -5.5 A rating at 25°C. This value assumes proper PCB thermal design with 1 in² 2 oz copper and accounts for junction temperature limits of 150°C. Actual current capability depends on layout, airflow, and adjacent heat sources - always verify with thermal simulation using RθJA = 48°C/W.
Does AO6409 require an external gate resistor for typical load-switch applications?
The AO6409 does not require an external gate resistor in most load-switch applications due to its internal gate resistance of 13 Ω (typ) and modest 9.3 nC gate charge. However, a 5–10 Ω series resistor is recommended when driving from weak GPIOs or to damp ringing in high-dI/dt environments. Avoid values >22 Ω unless intentional slow turn-on is needed for inrush limiting.
Can AO6409 be used in high-side switch configuration with 3.3 V microcontroller control?
Yes, the AO6409 is well-suited for high-side switching with 3.3 V microcontrollers because its VGS(th) is -0.57 V (typ) and it fully enhances at VGS = -3.3 V. In this configuration, source connects to VIN, drain to load, and gate driven low by MCU - ensuring robust turn-on with margin even at elevated temperatures.
What is the body-diode forward voltage of AO6409 at -1 A and 25°C?
The body-diode forward voltage (VSD) of AO6409 is -0.64 V (typ) at IS = -1 A and TJ = 25°C, as specified in the Electrical Characteristics table. This value increases to approximately -1.0 V at 125°C, and must be considered in freewheeling paths or reverse-current protection circuits where conduction loss and thermal rise are critical.
Is AO6409 RoHS-compliant and halogen-free?
Yes, AO6409 is RoHS-compliant and halogen-free per AOS's product specifications and material declarations. It meets JEDEC J-STD-609 Category 1 for bromine and chlorine content (<900 ppm each) and complies with EU Directive 2011/65/EU. Full compliance documentation is available through AOS's quality portal upon request.
AO6409 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.2 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1450 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
AO6409 FAQ
1.How can I place an order for AO6409 through Aetrix?
Please submit a Request for Quotation (RFQ) for AO6409 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AO6409 reliable?
The price and inventory of AO6409 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO6409 is usually 5 days.
3.What payment methods are accepted for AO6409?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO6409 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AO6409?
AO6409 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AO6409 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AO6409?
For technical support, including AO6409 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO6409 requirements.
6.How does Aetrix verify that AO6409 is sourced from the original manufacturer or authorized distributors?
All AO6409 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO6409 meets industry standards.
7.What is the process for return or replacement of AO6409?
All AO6409 units undergo pre-shipment inspection (PSI). If there is an issue with AO6409, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AO6409 part is unused and in its original packaging.
Return procedure for AO6409:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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