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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOB411L

Name: AOB411L
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOB411L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOB411L

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AOB411L.pdf

Description:: MOSFET P-CH 60V 8A/78A TO263

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Product details

Overview

AOB411L from Alpha & Omega Semiconductor is a 60V P-Channel trench MOSFET optimized for high-current synchronous rectification and boost converter topologies, featuring R_DS(ON) < 16.5 mΩ at V_GS = −10 V, 100% UIS-tested ruggedness, and −78 A continuous drain current at T_C = 25°C. It delivers low conduction loss in consumer, telecom, and industrial power supplies.

For engineers reviewing the AOB411L datasheet, pinout, applications, or equivalent options, key selection criteria include its P-channel polarity, 60 V V_DS rating, thermal performance (R_θJC = 0.8°C/W), body-diode recovery characteristics (Q_rr = 110–215 nC), and suitability for high-efficiency DC-DC conversion stages requiring robust avalanche capability.

Technical Context

The AOB411L employs advanced trench gate technology to achieve low R_DS(ON) while maintaining fast switching performance: t_d(off) = 83.5 ns, Q_g(10V) = 65–100 nC, and C_iss = 4260–6400 pF. Its P-channel configuration enables high-side switch control without level-shifting circuitry in buck-derived topologies.

Thermally, it supports high-power operation via a low R_θJC of 0.8°C/W and rated junction temperature up to 175°C. The device is 100% tested for unclamped inductive switching (UIS) and gate resistance (R_g = 1.4–4.2 Ω), ensuring reliability under transient stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−60 V - Supports input rails up to 48 V DC with margin for voltage spikes in telecom/industrial supplies.
R_DS(ON) @ V_GS = −10 V	< 16.5 mΩ - Enables ≤1.3 W conduction loss at −78 A, critical for high-current synchronous rectifiers.
R_DS(ON) @ V_GS = −4.5 V	< 22 mΩ - Ensures usable on-resistance in 5 V gate-drive systems like USB PD adapters.
I_D (continuous, T_C = 25°C)	−78 A - Matches high-output-current boost converters and LED backlighting drivers.
Q_g(10V)	65–100 nC - Determines gate drive power requirement; compatible with standard PWM controllers driving ≥1 A peak.
E_AS	Not specified in provided data - Avalanche energy rating not published; UIS testing confirms ruggedness but quantitative E_AS unavailable.
T_J max	175°C - Allows operation in thermally constrained enclosures with active heatsinking or forced air.
Body diode V_SD	−0.7 to −1.0 V - Low forward drop reduces reverse-recovery losses in discontinuous conduction mode (DCM).

Pinout & Package

AOB411L is housed in an industry-standard TO-263 (D2PAK) surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin assignment follows standard D2PAK layout: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires −10 V for full enhancement; R_g = 1.4–4.2 Ω limits ringing during switching.
D	Drain	High-side connection point; electrically tied to exposed copper pad for direct PCB thermal coupling to heatsink plane.
S	Source	Reference node for gate drive; connects to output rail in high-side switch configurations.

Key Features

Feature	Design Value
Advanced trench process	Enables <16.5 mΩ R_DS(ON) at −10 V while maintaining >10⁶ cycle reliability under UIS stress.
100% UIS tested	Guarantees survival under unclamped inductive turn-off events common in boost and flyback converters.
Low Q_rr body diode	Q_rr = 110–215 nC minimizes reverse-recovery losses and EMI in high-frequency synchronous rectification.
Exposed drain thermal pad	Reduces R_θJC to 0.8°C/W, enabling >187 W power dissipation at T_C = 25°C with proper PCB copper area.
−60 V V_DS rating	Provides 12 V margin above 48 V nominal input, supporting PoE++, telecom rectifiers, and industrial 36–48 V systems.

Applications

LED Backlighting Power Stage	48 V Telecom Rectifier
Use Scenario: High-current boost converter supplying 60–100 V to parallel LED strings in large-format displays. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve efficiency above 90%. Use Value: R_DS(ON) < 16.5 mΩ cuts rectifier loss by >65% vs. 45 V Schottky, enabling smaller heatsinks and higher lumen density.	Use Scenario: Secondary-side synchronous rectification in isolated 48 V telecom rectifiers delivering 100+ A output. IC Role / Device Role / Timing Role: P-channel high-side switch controlled by dedicated SR controller to replace diode in forward/flyback topology. Use Value: −78 A rating and 100% UIS testing ensure stable operation during load transients and line surges typical in central office power systems.
Industrial Boost Converter	USB-C PD Adapter Output Stage
Use Scenario: 24–36 V input boost stage generating 48 V bus for motor drives or PLC I/O modules. IC Role / Device Role / Timing Role: Main switching FET operating at 100–300 kHz with gate charge optimized for standard PWM ICs. Use Value: Q_g(10V) = 65–100 nC allows clean turn-on/turn-off with 1 A gate drivers, reducing switching loss and gate driver cost.	Use Scenario: Output synchronous rectifier in compact 65 W USB-C PD adapter using 5 V gate drive. IC Role / Device Role / Timing Role: P-channel FET enabling self-driven synchronous rectification without auxiliary winding or level shifter. Use Value: R_DS(ON) < 22 mΩ at V_GS = −4.5 V ensures low loss at 5 V logic-level drive, improving light-load efficiency.

LED Backlighting Power Stage

48 V Telecom Rectifier

Use Scenario: High-current boost converter supplying 60–100 V to parallel LED strings in large-format displays.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve efficiency above 90%.

Use Value: R_DS(ON) < 16.5 mΩ cuts rectifier loss by >65% vs. 45 V Schottky, enabling smaller heatsinks and higher lumen density.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V telecom rectifiers delivering 100+ A output.

IC Role / Device Role / Timing Role: P-channel high-side switch controlled by dedicated SR controller to replace diode in forward/flyback topology.

Use Value: −78 A rating and 100% UIS testing ensure stable operation during load transients and line surges typical in central office power systems.

Industrial Boost Converter

USB-C PD Adapter Output Stage

Use Scenario: 24–36 V input boost stage generating 48 V bus for motor drives or PLC I/O modules.

IC Role / Device Role / Timing Role: Main switching FET operating at 100–300 kHz with gate charge optimized for standard PWM ICs.

Use Value: Q_g(10V) = 65–100 nC allows clean turn-on/turn-off with 1 A gate drivers, reducing switching loss and gate driver cost.

Use Scenario: Output synchronous rectifier in compact 65 W USB-C PD adapter using 5 V gate drive.

IC Role / Device Role / Timing Role: P-channel FET enabling self-driven synchronous rectification without auxiliary winding or level shifter.

Use Value: R_DS(ON) < 22 mΩ at V_GS = −4.5 V ensures low loss at 5 V logic-level drive, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	V_DS = −55 V, R_DS(ON) = 20 mΩ @ −10 V, R_θJC = 1.0°C/W, no 100% UIS test stated	Limited to ≤40 V systems; higher conduction loss reduces efficiency in high-current boost stages	Choose when cost sensitivity outweighs 5 V V_DS margin and ruggedness requirements.
SiHP45N60E	N-channel, 600 V, R_DS(ON) = 65 mΩ @ −10 V, requires gate driver with level shift for high-side use	Not directly substitutable due to N-channel polarity; needs external driver and bootstrap circuitry	Select only if redesigning gate drive architecture is acceptable and higher voltage rating is required.

Compared with IRF4905PbF and SiHP45N60E, the AOB411L offers superior R_DS(ON), lower thermal resistance, and guaranteed UIS ruggedness-making it optimal for space-constrained, high-efficiency 48 V synchronous rectifiers where P-channel simplicity and reliability are prioritized over lowest unit cost or ultra-high voltage tolerance.

Availability

AOB411L is available at Aetrix Electronics and suitable for LED backlighting power stages, 48 V telecom rectifiers, and industrial boost converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOB411L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOB411L belongs to AOS's advanced trench P-channel MOSFET product line, engineered specifically for high-current, high-efficiency DC-DC conversion in space- and thermally-constrained power supplies.

FAQ

What is the maximum continuous drain current for the AOB411L at 100°C case temperature?

The AOB411L supports −77 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_θJC = 0.8°C/W and T_J(max) = 175°C. At this condition, the AOB411L remains viable for high-power industrial boost converters where ambient temperatures exceed 70°C and heatsinking is limited.

Does the AOB411L have a specified avalanche energy rating (E_AS)?

No, the AOB411L datasheet does not publish a numerical E_AS value. However, it states "100% UIS Tested", confirming that each unit passes unclamped inductive switching validation per JEDEC JESD24-11. Designers must rely on UIS pass/fail qualification rather than quantitative avalanche energy for stress analysis in the AOB411L.

Can the AOB411L be used with 5 V gate drive in synchronous rectification applications?

Yes, the AOB411L is characterized for R_DS(ON) < 22 mΩ at V_GS = −4.5 V, making it suitable for 5 V logic-level gate drive in self-driven synchronous rectifiers. Its threshold voltage range (−1.5 to −2.5 V) ensures reliable turn-on with 5 V controllers, and low Q_g(4.5V) = 35–50 nC minimizes drive power requirements in USB-C PD adapters and similar compact designs.

What is the thermal resistance from junction to case (R_θJC) for the AOB411L?

The AOB411L has a maximum junction-to-case thermal resistance (R_θJC) of 0.8°C/W, measured with the device mounted to a large heatsink. This low value enables high-power dissipation-up to 296 W at T_C = 25°C-when used with adequate PCB copper area or external heatsinking, supporting its role in high-current power stages where thermal management is critical.

Is the AOB411L pin-compatible with standard TO-263 (D2PAK) footprints?

Yes, the AOB411L uses the industry-standard TO-263 (D2PAK) package with three terminals (G, D, S) arranged in the conventional pinout. Its mechanical dimensions and solder pad layout match JEDEC MS-013AC, allowing direct placement on existing D2PAK footprints without PCB revision-provided thermal copper area and clearance meet AOS-recommended guidelines for R_θJC optimization.

AOB411L Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta), 78A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6400 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 187W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

AOB411L FAQ

1.How can I place an order for AOB411L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOB411L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOB411L reliable?

The price and inventory of AOB411L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOB411L is usually 5 days.

3.What payment methods are accepted for AOB411L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOB411L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOB411L?

AOB411L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOB411L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOB411L?

For technical support, including AOB411L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOB411L requirements.

6.How does Aetrix verify that AOB411L is sourced from the original manufacturer or authorized distributors?

All AOB411L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOB411L meets industry standards.

7.What is the process for return or replacement of AOB411L?

All AOB411L units undergo pre-shipment inspection (PSI). If there is an issue with AOB411L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOB411L part is unused and in its original packaging.

Return procedure for AOB411L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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