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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOD2210

Name: AOD2210
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOD2210
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOD2210

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AOD2210.pdf

Description:: MOSFET N-CH 200V 3A/18A TO252

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Product details

Overview

AOD2210 from Alpha & Omega Semiconductor is a 200V, 18A N-channel Trench Power MV MOSFET in TO-252 (DPAK) package, featuring R_DS(ON) < 105 mΩ at V_GS = 10 V and < 120 mΩ at V_GS = 5 V, optimized for fast-switching DC/DC converters and motor drive half-bridges.

For engineers reviewing the AOD2210 datasheet, pinout, applications, or equivalent options, key selection criteria include its 100% UIS-tested ruggedness, low gate charge (Q_g = 27–40 nC at 10 V), avalanche energy rating (E_AS = 4 mJ), and thermal performance with R_θJC = 1.5 °C/W.

Technical Context

The AOD2210 employs Trench Power MV MOSFET technology to achieve low conduction loss and fast switching dynamics. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 5 V logic-level drivers, while its low Q_gd/Q_g ratio (≈0.075) supports high dv/dt immunity in hard-switched topologies.

Designed for unclamped inductive switching (UIS) reliability, it delivers 100% tested avalanche capability up to I_AR = 13 A at t_A = 10 μs. The device's C_iss = 2065 pF and Cr_ss = 3.8 pF support efficient gate drive design in synchronous rectification stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum drain-source blocking voltage for 200 V bus applications.
I_D (V_GS = 10 V)	18 A - Continuous drain current rating at TC = 100 °C, suitable for medium-power switching stages.
R_DS(ON) (V_GS = 10 V)	< 105 mΩ - Low on-resistance minimizes conduction loss in high-current paths.
R_DS(ON) (V_GS = 5 V)	< 120 mΩ - Ensures usable channel enhancement with standard 5 V microcontroller outputs.
Q_g (10 V)	27–40 nC - Gate charge determines required driver strength and switching loss in PWM operation.
E_AS	4 mJ - Single-pulse avalanche energy rating confirms robustness under inductive fault conditions.
R_θJC	1.5 °C/W - Junction-to-case thermal resistance enables effective heatsinking in compact layouts.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, thermally enhanced with exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–20 V gate drive; low input capacitance (C_iss = 2065 pF) eases driver selection.
D	Drain	Main power output terminal; electrically connected to exposed copper pad for thermal and electrical conduction.
S	Source	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
Trench Power MV MOSFET technology	Enables lower R_DS(ON) and higher cell density vs. planar process, improving power density in space-constrained designs.
100% UIS tested	Guarantees single-pulse avalanche survival up to 4 mJ, eliminating need for external snubbers in inductive loads.
Low gate charge (Q_g)	Reduces gate drive power and switching losses-critical for high-frequency (>100 kHz) SMPS and motor control.
Optimized for fast switching	Short turn-on delay (8 ns), rise time (10 ns), and fall time (4 ns) enable clean transitions with minimal overlap loss.
Body diode with low V_SD	Forward voltage ≤1.0 V at 18 A supports efficient synchronous rectification without external Schottky replacement.

Applications

DC/DC Synchronous Rectifier	Industrial Motor Drive Half-Bridge
Use Scenario: High-efficiency buck converter in telecom power supply delivering 12 V @ 15 A. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: R_DS(ON) < 105 mΩ at 10 V cuts conduction loss by >60% vs. 0.5 V Schottky, improving full-load efficiency by ~1.8%.	Use Scenario: 24 V BLDC motor controller driving 500 W fan with PWM commutation. IC Role / Device Role / Timing Role: High-side or low-side switch in three-phase inverter leg. Use Value: 100% UIS testing ensures reliable operation during phase-current reversal transients without desaturation protection.
AC/DC PFC Boost Switch	UPS Inverter Stage
Use Scenario: Active PFC stage in 500 W server PSU operating at 70 kHz. IC Role / Device Role / Timing Role: Fast-switching boost switch handling 10 A peak inductor current. Use Value: Low Q_gd/Q_g ratio and 30 ns turn-off delay minimize Miller-induced shoot-through risk in critical conduction mode.	Use Scenario: 1 kVA online UPS inverting 48 V battery to 230 V AC with modified sine wave. IC Role / Device Role / Timing Role: Output H-bridge switch managing bidirectional energy flow and overload transients. Use Value: R_θJC = 1.5 °C/W allows direct mounting to aluminum chassis, enabling passive cooling without forced airflow.

DC/DC Synchronous Rectifier

Industrial Motor Drive Half-Bridge

Use Scenario: High-efficiency buck converter in telecom power supply delivering 12 V @ 15 A.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: R_DS(ON) < 105 mΩ at 10 V cuts conduction loss by >60% vs. 0.5 V Schottky, improving full-load efficiency by ~1.8%.

Use Scenario: 24 V BLDC motor controller driving 500 W fan with PWM commutation.

IC Role / Device Role / Timing Role: High-side or low-side switch in three-phase inverter leg.

Use Value: 100% UIS testing ensures reliable operation during phase-current reversal transients without desaturation protection.

AC/DC PFC Boost Switch

UPS Inverter Stage

Use Scenario: Active PFC stage in 500 W server PSU operating at 70 kHz.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 10 A peak inductor current.

Use Value: Low Q_gd/Q_g ratio and 30 ns turn-off delay minimize Miller-induced shoot-through risk in critical conduction mode.

Use Scenario: 1 kVA online UPS inverting 48 V battery to 230 V AC with modified sine wave.

IC Role / Device Role / Timing Role: Output H-bridge switch managing bidirectional energy flow and overload transients.

Use Value: R_θJC = 1.5 °C/W allows direct mounting to aluminum chassis, enabling passive cooling without forced airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	V_DS = 200 V, R_DS(ON) = 120 mΩ @ 10 V, Q_g = 42 nC, TO-220 package	Larger footprint, higher thermal resistance (R_θJC = 2.5 °C/W), no 100% UIS test specified	Acceptable where board space permits TO-220 and avalanche margin is secondary.
IRF6644	V_DS = 200 V, R_DS(ON) = 95 mΩ @ 10 V, Q_g = 32 nC, DirectFET package	Lower R_DS(ON) but requires specialized PCB layout; no body diode characterization provided	Preferred for ultra-low-loss designs where thermal interface and layout flexibility allow DirectFET integration.

Compared with STP20NM20 and IRF6644, the AOD2210 offers superior thermal performance in surface-mount form factor, guaranteed UIS ruggedness, and verified body diode behavior-making it optimal for compact, high-reliability industrial and telecom power stages.

Availability

AOD2210 is available at Aetrix Electronics and suitable for DC/DC converters, motor drives, and UPS inverters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for AOD2210 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOD2210 belongs to AOS' Trench Power MV MOSFET product line, engineered specifically for medium-voltage, high-current switching in space-constrained, thermally demanding power conversion systems.

FAQ

What is the maximum continuous drain current rating for the AOD2210 at 100°C case temperature?

The AOD2210 supports 18 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal management per the datasheet's 1 in² FR-4 reference layout. Derating applies above 100 °C case temperature, and the AOD2210 must not exceed its maximum junction temperature of 175 °C in operation.

Does the AOD2210 have a fully characterized body diode, and what is its forward voltage at rated current?

Yes, the AOD2210 features a fully characterized body diode with V_SD = 0.7–1.0 V at I_S = 18 A and T_J = 25 °C. The datasheet provides reverse recovery parameters (Q_rr = 800 nC, t_rr = 60 ns) and forward conduction curves across temperature, confirming suitability for synchronous rectification without external diodes in many designs.

Is the AOD2210 suitable for 5 V logic-level gate drive, and what is its R_DS(ON) under that condition?

Yes, the AOD2210 is logic-level compatible: its gate threshold voltage (V_GS(th)) ranges from 1.5 to 2.5 V, and it achieves R_DS(ON) < 120 mΩ at V_GS = 5 V and I_D = 16 A. This ensures strong enhancement and low conduction loss when driven directly from 5 V microcontrollers or gate drivers without level-shifting circuitry.

What thermal resistance values are specified for the AOD2210, and how do they impact heatsink selection?

The AOD2210 specifies R_θJC = 1.5 °C/W (junction-to-case) and R_θJA = 50 °C/W (junction-to-ambient, on 1 in² FR-4). The low R_θJC indicates excellent thermal coupling to an external heatsink or copper plane, while R_θJA reflects worst-case natural convection performance. For active cooling or large copper areas, junction temperature should be calculated using R_θJC + R_θCS + R_θSA, not R_θJA.

How is avalanche ruggedness validated for the AOD2210, and what does "100% UIS tested" mean in practice?

"100% UIS tested" means every AOD2210 unit undergoes unclamped inductive switching stress at I_AR = 13 A, L = 0.1 mH, and V_DD = 200 V, verifying minimum E_AS = 4 mJ. This qualification ensures each device can survive worst-case inductive turn-off events-such as motor stall or transformer saturation-without parameter shift or failure, eliminating the need for batch-level qualification sampling.

AOD2210 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2065 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

AOD2210 FAQ

1.How can I place an order for AOD2210 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOD2210 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOD2210 reliable?

The price and inventory of AOD2210 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD2210 is usually 5 days.

3.What payment methods are accepted for AOD2210?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD2210 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOD2210?

AOD2210 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOD2210 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOD2210?

For technical support, including AOD2210 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD2210 requirements.

6.How does Aetrix verify that AOD2210 is sourced from the original manufacturer or authorized distributors?

All AOD2210 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD2210 meets industry standards.

7.What is the process for return or replacement of AOD2210?

All AOD2210 units undergo pre-shipment inspection (PSI). If there is an issue with AOD2210, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOD2210 part is unused and in its original packaging.

Return procedure for AOD2210:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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