Alpha & Omega Semiconductor Inc. AOD242
- Part No.:
- AOD242
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AOD242.pdf
- Description:
- MOSFET N-CH 40V 14.5A/54A TO252
- Quantity:
- Payment:

- Shipping:

Inventory:4,320
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Product details
Overview
AOD242 from Alpha & Omega Semiconductor is a 40V N-channel Trench MOSFET optimized for high-frequency switching in power conversion stages, featuring RDS(ON) < 5.8 mΩ at VGS = 10 V, 54 A continuous drain current, and 100% UIS-tested ruggedness - deployed in synchronous rectifiers and boost converters for telecom and industrial power supplies.
For engineers reviewing the AOD242 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Qg = 19–28 nC), ultra-low output capacitance (Coss = 405 pF), and TO-252 (DPAK) thermal performance with RθJC = 2.8 °C/W - critical for efficiency-critical DC/DC designs.
Technical Context
The AOD242 employs trench-gate silicon technology to simultaneously minimize conduction loss (RDS(ON) < 5.8 mΩ @ 10 V) and switching loss (Ciss = 1350 pF, Coss = 405 pF, Qg = 19–28 nC). Its 100% UIS and Rg testing ensures robustness in unclamped inductive switching events.
Thermally, it delivers 53.5 W power dissipation at TC = 70 °C with RθJC = 2.8 °C/W, and supports pulsed drain currents up to 165 A. The body diode exhibits trr = 15.5 ns and Qrr = 31 nC under IF = 20 A, dI/dt = 500 A/µs conditions - enabling fast recovery in synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 36 V nominal input systems and 12/24 V bus architectures. |
| ID (continuous) | 54 A @ TC = 25 °C - Sustains high-current operation in compact heatsinked layouts without derating. |
| RDS(ON) @ 10 V | < 5.8 mΩ - Enables sub-100 mW conduction loss at 20 A, reducing thermal load in high-efficiency converters. |
| Qg (10 V) | 19–28 nC - Low gate drive energy requirement supports efficient operation with standard gate drivers at >500 kHz. |
| Coss | 405 pF - Minimizes capacitive turn-off loss and improves light-load efficiency in hard-switched topologies. |
| trr | 15.5 ns - Fast body diode recovery enables reliable synchronous rectification without external Schottky assist. |
| EAS | 14.5 mJ - Confirmed avalanche energy rating allows safe operation during transient overvoltage events. |
Pinout & Package
Package: TO-252 (DPAK), surface-mount, single-die N-channel MOSFET with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives gate drive signal; low input capacitance (Ciss = 1350 pF) reduces driver loading and propagation delay. |
| S (Source) | Reference node / return path | Common source connection for power stage; ties to ground or low-side switch node in half-bridge configurations. |
| D (Drain) | High-side power terminal | Exposed copper pad on bottom side; electrically and thermally connected to drain - requires PCB copper pour for RθJC = 2.8 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Delivers lowest RDS(ON)-to-Qg ratio in its 40 V class, enabling high-frequency (>1 MHz) operation with minimal switching loss. |
| 100% UIS tested | Guarantees single-pulse avalanche capability up to EAS = 14.5 mJ - eliminates need for external clamping in boost and flyback snubbers. |
| Low Coss & Crss | Coss = 405 pF and Crss = 26 pF reduce Miller-induced shoot-through risk and improve ZVS/ZCS transition margins. |
| Body diode with fast trr | trr = 15.5 ns and Qrr = 31 nC enable clean commutation in synchronous rectifier mode without reverse recovery spikes. |
| TO-252 thermal design | Exposed drain pad and RθJC = 2.8 °C/W allow direct heatsinking to PCB ground plane - supports 53.5 W at TC = 70 °C. |
Applications
| Boost Converter Stage | Synchronous Rectifier |
|---|---|
|
Use Scenario: High-efficiency step-up converter in LED backlighting and USB PD adapters operating at 300–1000 kHz. IC Role / Device Role: Main switching FET in discrete or controller-driven boost topology. Use Value: RDS(ON) < 5.8 mΩ and Qg < 28 nC jointly reduce total power loss by >15% vs. legacy 40 V MOSFETs at 20 A/500 kHz. |
Use Scenario: Secondary-side rectification in isolated DC/DC converters for telecom power modules. IC Role / Device Role: Low-loss replacement for Schottky diodes in forward/flyback outputs. Use Value: Body diode trr = 15.5 ns and VSD = 0.7–1.0 V cut conduction loss by ~40% and eliminate reverse recovery noise. |
| Industrial AC/DC Adapter | Consumer Power Bank |
|
Use Scenario: Primary-side switch in 65–120 W offline SMPS with active clamp or LLC resonant control. IC Role / Device Role: High-reliability 40 V switch handling peak currents up to 165 A in short pulses. Use Value: 100% UIS qualification and EAS = 14.5 mJ ensure survival during line surges and startup transients without derating. |
Use Scenario: Input protection and battery charging path switch in portable power banks with 2-cell Li-ion inputs. IC Role / Device Role: Load switch and reverse polarity protection element with integrated low-RDS(ON) FET. Use Value: RDS(ON) < 8.2 mΩ @ 4.5 V enables <100 mW loss at 3 A - extending runtime and reducing thermal stress in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(ON) = 6.5 mΩ @ 10 V; higher Ciss = 1500 pF; TO-252 package; no 100% UIS test stated. | Marginally higher switching loss in >500 kHz designs; less rugged in unclamped inductive loads. | Acceptable where cost sensitivity outweighs avalanche margin and high-frequency efficiency. |
| SiHFL024T | RDS(ON) = 5.2 mΩ @ 10 V; lower Qg = 16 nC; same TO-252; rated for automotive AEC-Q101 but higher price. | Better high-frequency efficiency and reliability; qualified for extended temperature range (−55 to 175 °C). | Preferred for mission-critical industrial or automotive auxiliary power where lifetime and thermal margin are prioritized. |
Compared with IRF7470PBF and SiHFL024T, the AOD242 offers the optimal balance of low RDS(ON), moderate Qg, and guaranteed UIS robustness at consumer-grade pricing - making it ideal for cost-sensitive yet efficiency-driven telecom and LED power supplies.
Availability
AOD242 is available at Aetrix Electronics and suitable for boost converters, synchronous rectifiers, and industrial AC/DC adapters requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for AOD242 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AOD242 belongs to AOS's TrenchMOS® family, engineered specifically for high-frequency, high-efficiency DC/DC conversion - emphasizing low RDS(ON), low gate charge, and rugged unclamped inductive switching behavior.
FAQ
What is the maximum continuous drain current rating for the AOD242?
The AOD242 has a continuous drain current rating of 54 A at case temperature TC = 25 °C, derating to 42 A at TC = 70 °C. This rating is package-limited and validated under steady-state conditions with proper PCB copper thermal relief per the datasheet's 1 in² FR-4 layout guidance. The AOD242 maintains this performance due to its TO-252 package's low RθJC of 2.8 °C/W.
Does the AOD242 support 4.5 V gate drive in logic-level applications?
Yes, the AOD242 is fully specified for 4.5 V gate drive: RDS(ON) is guaranteed < 8.2 mΩ at VGS = 4.5 V and ID = 20 A, and gate threshold voltage VGS(th) ranges from 1.3 V to 2.3 V. This makes the AOD242 suitable for 5 V microcontroller-driven load switches and battery-powered systems where 10 V gate bias is unavailable.
Is the AOD242 qualified for automotive applications?
No, the AOD242 is explicitly designed and qualified for the consumer market only. It is not AEC-Q101 qualified, and its datasheet states that applications in life-support devices or automotive safety-critical systems are unauthorized. For automotive use, consider AOS's AUIRF series or alternatives like SiHFL024T, which carry AEC-Q101 certification.
What thermal resistance values apply to the AOD242 in standard PCB mounting?
In a standard 1 in² FR-4 board with 2 oz. copper, the AOD242 exhibits RθJA = 50 °C/W (junction-to-ambient) and RθJC = 2.8 °C/W (junction-to-case). The latter enables direct heatsinking via the exposed drain pad, while the former governs natural-convection performance. Both values are measured per JEDEC JESD51 standards and documented on page 2 of the AOD242 datasheet.
How does the AOD242's body diode performance compare to discrete Schottky diodes?
The AOD242's integrated body diode achieves VSD = 0.7–1.0 V at IS = 1 A and trr = 15.5 ns at IF = 20 A, dI/dt = 500 A/µs - matching or exceeding many 40 V Schottky diodes in forward voltage while eliminating reverse recovery charge (Qrr = 31 nC is significantly lower than typical fast recovery diodes). This allows the AOD242 to replace Schottkys in synchronous rectifiers without sacrificing efficiency or EMI performance.
AOD242 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.5A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1350 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 53.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
AOD242 FAQ
1.How can I place an order for AOD242 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOD242 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOD242 reliable?
The price and inventory of AOD242 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD242 is usually 5 days.
3.What payment methods are accepted for AOD242?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD242 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOD242?
AOD242 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOD242 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOD242?
For technical support, including AOD242 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD242 requirements.
6.How does Aetrix verify that AOD242 is sourced from the original manufacturer or authorized distributors?
All AOD242 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD242 meets industry standards.
7.What is the process for return or replacement of AOD242?
All AOD242 units undergo pre-shipment inspection (PSI). If there is an issue with AOD242, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOD242 part is unused and in its original packaging.
Return procedure for AOD242:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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