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Alpha & Omega Semiconductor Inc. AOD2610E

Part No.:
AOD2610E
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixAOD2610E.pdf
Description:
MOSFET N-CH 60V 46A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,673

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Product details

Overview

AOD2610E from Alpha & Omega Semiconductor is a 60V, 46A N-channel Trench Power MOSFET using AlphaSGT™ technology, optimized for high-efficiency power conversion with RDS(ON) < 9.5 mΩ at VGS = 10 V and < 13.3 mΩ at 4.5 V. It serves as a primary or synchronous rectifier switch in DC-DC converters and motor drivers.

For engineers reviewing the AOD2610E datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Qg = 14.5–25 nC), robust UIS rating (EAS = 43 mJ), HBM Class 2 ESD protection, TO-252 (DPAK) package, and 100% Rg and UIS tested qualification.

Technical Context

The AOD2610E employs AlphaSGT™ trench-gate silicon technology to achieve low conduction loss and fast switching performance. Its gate threshold voltage (1.4–2.4 V) enables compatibility with 3.3 V and 5 V logic-level drive, while low Qgd (3.5 nC) and Crss (28 pF) support high-frequency operation with reduced switching loss.

Thermal design is supported by a low junction-to-case thermal resistance of 2.1 °C/W and a maximum junction temperature of 150 °C. The device features an integrated body diode with VSD = 0.72–1.0 V and trr = 19 ns, enabling efficient freewheeling in synchronous rectification topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage for 48 V bus and PoE++ applications.
ID (VGS=10 V) 46 A - Continuous drain current rating at TC = 25 °C, suitable for high-current output stages.
RDS(ON) (VGS=10 V) < 9.5 mΩ - Low on-resistance minimizes conduction loss in high-current paths.
RDS(ON) (VGS=4.5 V) < 13.3 mΩ - Enables full enhancement with 5 V gate drive, critical for logic-level control.
Qg (10 V) 14.5–25 nC - Gate charge directly impacts driver sizing and switching loss in hard-switched converters.
EAS 43 mJ - Unclamped inductive switching energy rating ensures ruggedness under transient overloads.
tr/tf 3.5 ns / 3 ns - Fast rise/fall times reduce switching transition losses at MHz-class frequencies.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, thermally enhanced with exposed drain pad.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control terminal Receives gate drive signal; low input capacitance (Ciss = 1100 pF) eases driver design.
D (Drain) High-side power node Connected to switched high-voltage rail; electrically tied to exposed thermal pad for heat dissipation.
S (Source) Reference and return path Serves as power ground reference; source inductance affects switching stability and dV/dt immunity.

Key Features

Feature Design Value
AlphaSGT™ trench technology Enables lower RDS(ON) and higher cell density than planar MOSFETs, improving power density.
Low Qg and Qgd Reduces gate drive power and Miller-induced shoot-through risk in half-bridge configurations.
HBM Class 2 ESD protection Withstands ≥2 kV human-body-model ESD without external protection, simplifying board-level ESD design.
100% UIS and Rg tested Ensures production lot reliability under unclamped inductive stress and consistent gate resistance.
RoHS and halogen-free Complies with environmental regulations for industrial, telecom, and consumer end equipment.

Applications

Server VRM Output Stage Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency buck converter delivering 12 V/50 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with 4.5 V gate drive.

Use Value: Low RDS(ON) at 4.5 V and fast switching minimize conduction and transition losses, improving system efficiency by >1.2% vs. legacy MOSFETs.

Use Scenario: 48 V to 12 V isolated DC-DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC topology.

Use Value: Integrated body diode with trr = 19 ns and Qrr = 65 nC reduces reverse recovery loss and EMI generation during zero-voltage switching transitions.

Motor Drive Half-Bridge Telecom PoE++ PSE Switch

Use Scenario: 24 V BLDC motor controller with 3-phase inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge, driven by gate driver IC with 10 V output.

Use Value: RDS(ON) < 9.5 mΩ at 10 V reduces I²R loss at peak currents up to 46 A, limiting junction temperature rise under continuous load.

Use Scenario: Power Sourcing Equipment (PSE) switch in IEEE 802.3bt Type 4 (90 W) PoE++ injectors.

IC Role / Device Role / Timing Role: Primary pass transistor controlling power delivery to PD interface.

Use Value: 60 V VDS rating accommodates PoE+ and PoE++ surge transients; 100% UIS tested ensures survivability during cable fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF7470PBF RDS(ON) = 11.5 mΩ @ 10 V; Qg = 32 nC; TO-252 package; no HBM ESD rating specified. Higher gate charge increases driver loss and limits max switching frequency vs. AOD2610E. Prefer AOD2610E where <25 nC Qg and ESD robustness are required for compact, high-frequency designs.
DMN6070LFG-7 RDS(ON) = 8.5 mΩ @ 10 V; Qg = 17 nC; same TO-252 package; rated for 60 V but not 100% UIS tested. Lacks documented UIS qualification, reducing confidence in unclamped inductive fault tolerance. Select AOD2610E when guaranteed UIS ruggedness and production-tested Rg are mandatory for industrial reliability.

Compared with IRF7470PBF and DMN6070LFG-7, the AOD2610E delivers superior gate-drive efficiency (lower Qg), verified avalanche robustness, and built-in ESD protection-making it optimal for space-constrained, high-reliability power stages where thermal margin and transient immunity are critical.

Availability

AOD2610E is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and PoE++ power sourcing equipment requiring stable component supply and long-term manufacturability.

Supply support for AOD2610E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, industrial, and communications markets.

The AOD2610E belongs to AOS's AlphaSGT™ N-channel MOSFET product line, engineered for high-efficiency, high-current power conversion in space-constrained applications demanding low RDS(ON), fast switching, and ruggedness.

FAQ

What is the maximum continuous drain current rating for the AOD2610E?

The AOD2610E has a continuous drain current rating of 46 A at TC = 25 °C. At elevated case temperatures, this rating de-rates linearly-e.g., to approximately 23.5 A at TC = 100 °C-based on its thermal characteristics and maximum junction temperature limit of 150 °C. This value is defined under steady-state conditions with proper heatsinking and must be validated against actual PCB layout and ambient conditions in the final design.

Does the AOD2610E support 5 V logic-level gate drive?

Yes, the AOD2610E supports 5 V logic-level gate drive due to its gate threshold voltage range of 1.4–2.4 V and guaranteed RDS(ON) < 13.3 mΩ at VGS = 4.5 V. This allows full enhancement with standard 5 V microcontroller or gate driver outputs, eliminating the need for level-shifting circuitry in many low-voltage control applications.

Is the AOD2610E qualified for unclamped inductive switching (UIS)?

Yes, the AOD2610E is 100% UIS tested per JEDEC JESD22-A116, with a single-pulse avalanche energy rating of 43 mJ (L = 0.3 mH). This qualification ensures reliable operation under inductive turn-off transients common in motor drives and DC-DC converters, provided the device remains within its safe operating area and thermal limits.

What is the thermal resistance from junction to case for the AOD2610E?

The AOD2610E has a maximum junction-to-case thermal resistance (RθJC) of 2.1 °C/W, measured under standardized test conditions with the device mounted to a large heatsink. This value enables accurate calculation of junction temperature rise under power dissipation and informs heatsink sizing decisions for high-power applications.

Does the AOD2610E have integrated ESD protection?

Yes, the AOD2610E features integrated HBM Class 2 ESD protection, rated to withstand ≥2 kV per JEDEC JS-001. This eliminates the need for external ESD protection components in most board-level implementations, reducing BOM count and layout complexity while maintaining robustness during handling and assembly.

AOD2610E Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
AlphaSGT™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
6.2W (Ta), 59.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)

AOD2610E FAQ

1.How can I place an order for AOD2610E through Aetrix?

Please submit a Request for Quotation (RFQ) for AOD2610E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOD2610E reliable?

The price and inventory of AOD2610E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD2610E is usually 5 days.

3.What payment methods are accepted for AOD2610E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD2610E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOD2610E?

AOD2610E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOD2610E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOD2610E?

For technical support, including AOD2610E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD2610E requirements.

6.How does Aetrix verify that AOD2610E is sourced from the original manufacturer or authorized distributors?

All AOD2610E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD2610E meets industry standards.

7.What is the process for return or replacement of AOD2610E?

All AOD2610E units undergo pre-shipment inspection (PSI). If there is an issue with AOD2610E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOD2610E part is unused and in its original packaging.

Return procedure for AOD2610E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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