My Inquiry
My Account
Alpha & Omega Semiconductor Inc. AOD2810
- Part No.:
- AOD2810
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AOD2810.pdf
- Description:
- MOSFET N-CH 80V 10.5A/46A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:8,666
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AOD2810 from Alpha & Omega Semiconductor is an 80V N-Channel Trench MOSFET optimized for high-frequency switching, delivering RDS(ON) < 8.5 mΩ at VGS = 10 V, 46 A continuous drain current, and 100% UIS-tested ruggedness - deployed in boost converters and synchronous rectifiers for telecom and industrial power supplies.
For engineers reviewing the AOD2810 datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-252 (DPAK) package thermal performance (RθJC = 1.5 °C/W), low gate charge (Qg = 38 nC max), and body-diode recovery characteristics (trr = 32 ns, Qrr = 162 nC) critical for ZVS and hard-switched topologies.
Technical Context
The AOD2810 employs trench-gate silicon process technology to simultaneously minimize conduction loss (via ultra-low RDS(ON)) and switching loss (via reduced Ciss = 1871 pF and Coss = 265 pF). Its gate threshold voltage (2.3–3.4 V) enables robust 6 V logic-level drive compatibility while maintaining noise immunity.
Designed for unclamped inductive switching (UIS) reliability, the AOD2810 undergoes 100% avalanche testing (EAS rated, IAR = 35 A peak) and 100% gate resistance screening (Rg = 0.6–2.0 Ω), ensuring consistent turn-on/turn-off timing and SOA compliance up to TJ = 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage suitable for 48 V input systems and 60 V bus architectures without derating. |
| RDS(ON) @ VGS=10 V | < 8.5 mΩ - Enables <1.9 W conduction loss at 46 A, reducing heatsink requirements in high-current DC/DC stages. |
| Qg | 26.5–38 nC - Low total gate charge minimizes driver power demand and supports >500 kHz switching in compact SMPS designs. |
| tr/tf | 8.5 ns / 5.5 ns - Fast edge rates reduce switching transition time, lowering overlap loss in synchronous buck/boost topologies. |
| RθJC | 1.5 °C/W - Junction-to-case thermal resistance allows direct mounting to heatsinks for sustained 50 W dissipation at TC = 100 °C. |
| EAS | Rated - 100% unclamped inductive switching tested; supports reliable operation in flyback, LLC, and active clamp circuits. |
| ID (continuous) | 46 A @ TC = 25 °C - Package-limited current rating confirms TO-252 footprint can sustain high-power density without solder joint fatigue. |
Pinout & Package
Package: TO-252 (DPAK), surface-mount, single-die N-Channel MOSFET with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives PWM signal; low input capacitance (Ciss = 1871 pF) reduces driver loading and EMI generation. |
| S (Source) | Reference node / return path | Common source connection for low-side switching; ties directly to PCB ground plane for stable gate drive reference. |
| D (Drain) | Power output terminal | Exposed metal pad on bottom side; electrically and thermally connected to drain, enabling low-inductance, high-current routing. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Delivers lowest RDS(ON) × Qg figure-of-merit in 80 V class, enabling >96% efficiency in 48 V–12 V synchronous buck converters. |
| 100% UIS tested | Guarantees single-pulse avalanche energy handling without parameter shift - eliminates need for external snubbers in inductive load switching. |
| Low Coss (265 pF) | Reduces turn-off loss and improves light-load efficiency in resonant topologies by minimizing capacitive discharge energy. |
| Body diode trr = 32 ns | Enables clean commutation in synchronous rectification; limits reverse recovery overshoot and associated EMI in high-dV/dt environments. |
| Rg screened (0.6–2.0 Ω) | Ensures tight distribution of switching speed across production lots, simplifying gate driver design and layout validation. |
Applications
| Telecom AC-DC Front-End | Industrial Boost PFC Stage |
|---|---|
|
Use Scenario: High-efficiency active PFC in 1 kW telecom rectifiers operating at 100–300 kHz. IC Role / Device Role: Main switch in continuous conduction mode (CCM) boost converter. Use Value: RDS(ON) < 8.5 mΩ and Qg ≤ 38 nC enable <0.8% conduction + switching loss at full load, meeting 80 PLUS Titanium requirements. |
Use Scenario: 3.3 kW industrial motor drive pre-regulator with universal AC input (90–264 VAC). IC Role / Device Role: High-side boost switch in interleaved dual-phase PFC. Use Value: 100% UIS rating and 175 °C TJ(max) ensure reliability under line surges and overload transients without derating. |
| LED Backlight Inverter | Synchronous Rectifier in LLC Resonant Converter |
|
Use Scenario: High-brightness LCD TV backlight using series-string LED arrays driven at 200–500 kHz. IC Role / Device Role: Primary-side switching FET in flyback-derived constant-current controller. Use Value: Fast tf = 5.5 ns and low Coss suppress ringing during zero-voltage switching transitions, reducing EMI filter size by 30%. |
Use Scenario: Secondary-side synchronous rectification in server PSU LLC converters (400 V input, 12 V output). IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode. Use Value: Body diode VSD = 0.73 V and trr = 32 ns allow precise timing control, achieving >0.5% efficiency gain over 60 V Schottky alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-Channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP80NF55-08 | Higher RDS(ON) (8.8 mΩ), higher Qg (70 nC), TO-220 package | Larger footprint and higher gate drive loss limit usable frequency to ≤200 kHz | Prefer AOD2810 where board space, thermal resistance, or >300 kHz operation is required. |
| IRF540N | Higher RDS(ON) (44 mΩ), no UIS rating, legacy planar process | Not rated for repetitive avalanche; unsuitable for inductive switching without snubber | AOD2810 provides 5.2× lower RDS(ON) and guaranteed ruggedness - mandatory for unclamped loads. |
Compared with STP80NF55-08 and IRF540N, the AOD2810 delivers superior high-frequency efficiency via lower Qg and Coss, verified UIS ruggedness for inductive loads, and TO-252 thermal performance enabling smaller heatsinks and higher power density.
Availability
AOD2810 is available at Aetrix Electronics and suitable for telecom AC-DC front-ends, industrial boost PFC stages, and LED backlight inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AOD2810 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for power conversion and management.
The AOD2810 belongs to AOS' Trench Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC and AC/DC power stages in telecom, industrial, and consumer applications.
FAQ
What is the maximum junction temperature rating for the AOD2810?
The AOD2810 has a maximum junction temperature (TJ) rating of 175 °C, validated across all absolute maximum ratings and thermal characterization curves. This rating is used to calculate power derating (Figure 13) and safe operating area (Figure 9), and enables operation in high-ambient industrial environments when paired with appropriate heatsinking. The AOD2810 maintains specified RDS(ON) and switching parameters up to this limit.
Does the AOD2810 support 6 V gate drive in practical designs?
Yes - the AOD2810 has a gate threshold voltage range of 2.3–3.4 V and guarantees RDS(ON)GS = 6 V, making it fully compatible with standard 5 V or 6 V logic-level microcontrollers and gate drivers. Its low Qg ensures fast turn-on even with limited drive strength, and the 100% Rg screening ensures consistent timing behavior across units. This capability is confirmed in Figure 5 and the Electrical Characteristics table.
Is the AOD2810 suitable for synchronous rectification in LLC converters?
Yes - the AOD2810 is explicitly recommended for synchronous rectification in consumer and telecom power supplies, including LLC resonant converters. Its low body diode forward voltage (VSD = 0.73 V typ), fast reverse recovery (trr = 32 ns), and low Qrr (162 nC) minimize conduction and recovery losses during dead-time commutation. These parameters are measured per JEDEC JESD24-11 and validated in Figures 6 and 12.
What thermal resistance values apply to the AOD2810 in PCB-mounted configurations?
For the AOD2810 in TO-252 package, RθJC = 1.5 °C/W (junction-to-case) and RθJA = 50 °C/W (junction-to-ambient, measured on 1 in² FR-4 with 2 oz copper). The latter assumes standard PCB layout per Note H; actual RθJA improves significantly with enhanced copper pour and thermal vias. Power dissipation limits must be calculated using these values - e.g., at TA = 70 °C, PD ≤ 100 W (steady-state) per the Absolute Maximum Ratings table.
How is avalanche ruggedness verified for the AOD2810?
The AOD2810 undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD22-A116, with each unit validated to withstand single-pulse avalanche energy at rated conditions. The datasheet specifies IAR = 35 A peak (Figure 12) and guarantees no parameter degradation post-test. This testing is performed on every production lot, not sampled, and is distinct from theoretical SOA curve projections - it reflects real-world surge tolerance in boost, flyback, and active clamp circuits.
AOD2810 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1871 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 100W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
AOD2810 FAQ
1.How can I place an order for AOD2810 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOD2810 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOD2810 reliable?
The price and inventory of AOD2810 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD2810 is usually 5 days.
3.What payment methods are accepted for AOD2810?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD2810 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOD2810?
AOD2810 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOD2810 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOD2810?
For technical support, including AOD2810 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD2810 requirements.
6.How does Aetrix verify that AOD2810 is sourced from the original manufacturer or authorized distributors?
All AOD2810 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD2810 meets industry standards.
7.What is the process for return or replacement of AOD2810?
All AOD2810 units undergo pre-shipment inspection (PSI). If there is an issue with AOD2810, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOD2810 part is unused and in its original packaging.
Return procedure for AOD2810:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AOD2810 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
