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Alpha & Omega Semiconductor Inc. AOD3N40
- Part No.:
- AOD3N40
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AOD3N40.pdf
- Description:
- MOSFET N CH 400V 2.6A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:3,204
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Product details
Overview
AOD3N40 from Alpha & Omega Semiconductor is a 400 V, 2.6 A N-channel enhancement-mode MOSFET in TO-252 (DPAK) package, featuring RDS(on) < 3.1 Ω at VGS = 10 V, 100% UIS-tested avalanche robustness, and optimized capacitance profile (Ciss = 186 pF typ, Crss = 2.1 pF typ) for offline AC-DC power supply switching stages.
For engineers reviewing the AOD3N40 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal de-rating curves, gate-charge behavior, body-diode recovery metrics (trr = 140 ns typ, Qrr = 0.64 mC), and validated alternative options for high-voltage flyback and PFC designs.
Technical Context
The AOD3N40 employs Alpha & Omega's high-voltage trench MOSFET process, delivering guaranteed unclamped inductive switching (UIS) capability up to 68 mJ and repetitive avalanche rating of 34 mJ. Its low Crss/Ciss ratio (≈1.1%) supports stable high-speed switching with minimal Miller-induced oscillation risk.
Designed specifically for primary-side switching in universal-input offline SMPS, the device operates with VGS(th) = 3.4–4.5 V, gFS = 1.7 S typ, and exhibits normalized RDS(on) drift of only +20% from 25°C to 125°C - enabling predictable conduction loss across industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Rated for 380 V DC bus applications with 5% margin; withstands 500 V transient per BVDSS test at 150°C. |
| RDS(on) | < 3.1 Ω @ VGS = 10 V, ID = 1 A - Enables ≤800 mW conduction loss at 2.6 A continuous, suitable for thermally constrained DPAK layouts. |
| Qg | 4.2 nC typ - Low gate charge reduces drive power and enables use with standard 100 mA gate drivers in 65–100 kHz flyback converters. |
| trr / Qrr | 140 ns / 0.64 mC - Fast, soft-recovery body diode minimizes switching loss and EMI in discontinuous conduction mode (DCM) operation. |
| PD (TC = 25°C) | 55 W - Based on RθJC = 2.5 °C/W; usable up to ~35 W with moderate heatsinking at TC = 100°C per derating curve. |
| UIS Energy | 68 mJ single-pulse - Validated per JEDEC JESD24-11; supports reliable operation under transformer saturation or output short-circuit events. |
Pinout & Package
Package: TO-252 (DPAK), surface-mount, exposed drain pad for thermal conduction. Standard pin assignment confirmed per AOS datasheet Rev. 2.1 (Nov. 2023), top-view and bottom-view diagrams.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; threshold voltage 3.4–4.5 V ensures turn-on compatibility with 5 V microcontrollers via level-shifting. |
| S (Source) | Reference node | Common return path for load current and gate driver; tied to PCB ground plane for low-inductance layout and EMI control. |
| D (Drain) | High-side power terminal | Connected to transformer primary or bulk capacitor; exposed pad electrically and thermally connected to drain for enhanced heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Each unit validated to 68 mJ single-pulse avalanche energy - eliminates field failure risk from inductive kickback in unregulated supplies. |
| Low Crss/Ciss ratio | 2.1 pF / 186 pF ≈ 1.1% - suppresses Miller plateau effects, enabling clean hard-switching up to 100 kHz without external gate clamping. |
| Guaranteed RDS(on) max | 3.1 Ω at VGS = 10 V - allows precise conduction loss budgeting in thermal design without worst-case guard-banding. |
| Body diode trr spec | 140 ns typ, 170 ns max - enables zero-voltage switching (ZVS) assist in quasi-resonant topologies and reduces snubber losses. |
Applications
| AC-DC Flyback Converter | Active PFC Pre-regulator |
|---|---|
Use Scenario: Primary-side switch in 15–30 W universal-input (85–265 VAC) offline flyback power supplies for LED drivers and IoT adapters. IC Role / Device Role: High-voltage switching element controlling energy transfer to secondary winding during each switching cycle. Use Value: Low Qg (4.2 nC) and fast trr (140 ns) reduce total switching loss by ≥15% vs. legacy 400 V MOSFETs, improving efficiency at 65 kHz. |
Use Scenario: Switching device in boost-type active PFC stage for 50–100 W industrial power supplies meeting IEC 61000-3-2 Class C. IC Role / Device Role: Controlled conduction path shaping input current waveform to match sinusoidal line voltage. Use Value: Guaranteed 500 V BVDSS at 150°C ensures margin against line surges and rectified peak transients up to 380 V DC. |
| Offline LED Driver | Industrial Control Power Supply |
Use Scenario: Constant-current switching regulator in isolated LED drivers for street lighting and commercial signage. IC Role / Device Role: Primary-side MOSFET modulating transformer duty cycle to regulate LED string current. Use Value: 100% Rg tested ensures consistent gate drive timing and eliminates batch-to-batch variation in switching transition times. |
Use Scenario: Main switch in 24 V/5 A auxiliary power supply for PLC I/O modules operating in -40°C to +85°C ambient. IC Role / Device Role: High-reliability power switch handling repeated surge currents during motor contactor activation. Use Value: Repetitive avalanche rating (34 mJ) and 150°C TJ max enable sustained operation under frequent overcurrent stress without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK40Z | RDS(on) = 3.5 Ω max (VGS = 10 V); no UIS testing specified; Ciss = 250 pF typ. | Limited to lower-frequency (<50 kHz) flyback due to higher capacitance and undefined avalanche performance. | Select when cost sensitivity outweighs need for guaranteed avalanche ruggedness and high-frequency optimization. |
| IXTP2N40P | TO-220 package; RDS(on) = 3.0 Ω max; Qg = 5.8 nC; no Qrr or trr spec provided. | Requires through-hole assembly and larger heatsink; unsuitable for compact SMT designs requiring fast body-diode recovery. | Prefer for legacy through-hole systems where board real estate and thermal mass permit larger footprint and slower switching. |
Compared with STP3NK40Z and IXTP2N40P, the AOD3N40 delivers superior high-frequency efficiency via lower Qg and Crss, verified UIS robustness for surge immunity, and SMT-ready TO-252 packaging - making it optimal for space-constrained, high-reliability AC-DC converters.
Availability
AOD3N40 is available at Aetrix Electronics and suitable for AC-DC flyback converters, active PFC pre-regulators, and industrial auxiliary power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AOD3N40 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for power conversion and management.
The AOD3N40 belongs to AOS's high-voltage discrete MOSFET product line, engineered for rugged, high-reliability operation in offline power supplies where avalanche capability, thermal stability, and switching efficiency are critical.
FAQ
What is the maximum continuous drain current rating for the AOD3N40 at 100°C case temperature?
The AOD3N40 has a continuous drain current rating of 1.6 A at TC = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 2.6 A rating at TC = 25°C and reflects safe conduction capability when mounted on a PCB with adequate copper area and airflow. The AOD3N40 maintains stable RDS(on) performance across this range, supporting predictable loss calculation in thermal design.
Does the AOD3N40 support logic-level gate drive?
The AOD3N40 is not a logic-level MOSFET; its gate threshold voltage (VGS(th)) is specified from 3.4 V to 4.5 V, and full enhancement requires VGS ≥ 10 V for RDS(on) < 3.1 Ω. While it may weakly conduct at 5 V, the AOD3N40 does not guarantee low on-resistance or sufficient transconductance below 8 V. For reliable switching, the AOD3N40 must be driven with a dedicated 10–15 V gate driver stage.
Is the AOD3N40 suitable for synchronous rectification in secondary-side applications?
No, the AOD3N40 is not suitable for synchronous rectification. It is a 400 V N-channel MOSFET optimized for high-side primary switching, with body diode characteristics (VSD = 0.8–1.0 V, trr = 140 ns) designed for controlled recovery-not low forward drop or bidirectional conduction. Synchronous rectifiers require low VF, fast reverse recovery, and often P-channel or logic-level N-channel devices; the AOD3N40 does not meet those functional requirements.
What is the thermal resistance from junction to case (RθJC) for the AOD3N40?
The AOD3N40 has a maximum junction-to-case thermal resistance (RθJC) of 2.5 °C/W, measured under standardized conditions with the device mounted to a large heatsink. This value is used to calculate power dissipation limits when heatsinking is applied directly to the exposed drain pad. The AOD3N40's low RθJC enables efficient heat extraction, supporting up to 55 W at TC = 25°C before derating begins.
How is avalanche ruggedness validated for the AOD3N40?
Avalanche ruggedness for the AOD3N40 is validated through 100% production testing per JEDEC JESD24-11, with each unit subjected to single-pulse unclamped inductive switching (UIS) at 68 mJ and repetitive avalanche at 34 mJ. Test conditions include L = 60 mH, IAS = 1.5 A, VDD = 150 V, RG = 10 Ω, and starting TJ = 25°C. This ensures every shipped AOD3N40 meets the rated energy thresholds without screening exceptions.
AOD3N40 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.1Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.1 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 225 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
AOD3N40 FAQ
1.How can I place an order for AOD3N40 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOD3N40 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOD3N40 reliable?
The price and inventory of AOD3N40 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD3N40 is usually 5 days.
3.What payment methods are accepted for AOD3N40?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD3N40 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOD3N40?
AOD3N40 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOD3N40 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOD3N40?
For technical support, including AOD3N40 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD3N40 requirements.
6.How does Aetrix verify that AOD3N40 is sourced from the original manufacturer or authorized distributors?
All AOD3N40 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD3N40 meets industry standards.
7.What is the process for return or replacement of AOD3N40?
All AOD3N40 units undergo pre-shipment inspection (PSI). If there is an issue with AOD3N40, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOD3N40 part is unused and in its original packaging.
Return procedure for AOD3N40:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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