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Alpha & Omega Semiconductor Inc. AOD536
- Part No.:
- AOD536
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AOD536.pdf
- Description:
- MOSFET N-CH 30V 20.5A
- Quantity:
- Payment:
- Shipping:
Inventory:9,558
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Product details
Overview
AOD536 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power AlphaMOS (αMOS LV) MOSFET optimized for high-efficiency DC/DC conversion, featuring RDS(ON) < 8.5 mΩ at VGS = 10 V, 46 A continuous drain current, and low gate charge (Qg = 14–22 nC). It serves as a primary synchronous rectifier or high-side switch in POL and isolated telecom power stages.
For engineers reviewing the AOD536 datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-252 package thermal performance (RθJC = 4 °C/W), avalanche-rated ruggedness (EAS = 29 mJ), and validated 100% UIS and Rg testing for production reliability.
Technical Context
The AOD536 employs αMOS LV trench technology to achieve low conduction loss and fast switching with tD(on) = 7 ns and tf = 4 ns. Its gate threshold voltage (1.4–2.2 V) enables robust 4.5 V logic-level drive compatibility while maintaining low leakage (IGSS ≤ ±100 nA).
Thermal design is supported by dual dissipation ratings: PD = 36 W (TC = 100 °C) using junction-to-case path, and PDSM = 30 W (TA = 25 °C, 1 in² FR-4) via junction-to-ambient path. Body diode recovery (Qrr = 20 nC, trr = 12 ns) is characterized for hard-switched inductive turn-off.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial/computing power supplies. |
| ID (VGS = 10 V) | 46 A - Continuous current rating enabling high-power density POL converters without parallel devices. |
| RDS(ON) (VGS = 10 V) | < 8.5 mΩ - Low conduction loss reduces I²R heating and improves full-load efficiency in 12–24 V output stages. |
| RDS(ON) (VGS = 4.5 V) | < 14.7 mΩ - Ensures usable on-resistance under 5 V logic drive, supporting direct microcontroller gate control. |
| Qg (10 V) | 14–22 nC - Low total gate charge minimizes driver power loss and enables high-frequency operation up to 1 MHz. |
| EAS | 29 mJ - Unclamped inductive switching energy rating confirms ruggedness in flyback, forward, and LLC resonant converter topologies. |
| RθJC | 4 °C/W - Junction-to-case thermal resistance supports direct heatsink mounting for thermally constrained board layouts. |
Pinout & Package
Package: TO-252 (DPAK), surface-mount, single-die N-channel MOSFET with exposed drain pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives gate drive signal; low input capacitance (Ciss = 1140 pF) reduces driver loading and EMI risk. |
| D (Drain) | High-side power node | Connected to input rail or transformer secondary; exposed pad provides primary thermal path to PCB copper or heatsink. |
| S (Source) | Reference and return path | Common node for gate drive reference and current sensing; ties to low-side switch source or ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Trench Power AlphaMOS LV technology | Enables <8.5 mΩ RDS(ON) at 30 V while maintaining low gate charge and high cell density for compact layout. |
| 100% UIS tested | Each unit validated for unclamped inductive switching stress, ensuring reliability in hard-switched topologies without snubbers. |
| 100% Rg tested | Gate resistance (1.2–3.8 Ω) verified per unit to guarantee consistent switching speed and reduce EMI variation across lots. |
| RoHS and Halogen-Free compliant | Meets IPC-1752A material declaration requirements for environmentally regulated industrial and computing end equipment. |
| Body diode with low Qrr | 20 nC reverse recovery charge and 12 ns trr minimize shoot-through risk and losses during synchronous rectification. |
Applications
| Server Point-of-Load Converters | Telecom Isolated DC/DC Modules |
|---|---|
Use Scenario: High-current 12 V → 1.2 V conversion feeding CPU/GPU VRMs in rack-mounted servers. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier in multiphase buck converters operating at 300–600 kHz. Use Value: Sub-9 mΩ RDS(ON) reduces conduction loss by >25% vs. legacy 30 V MOSFETs, directly improving full-load efficiency and thermal headroom. |
Use Scenario: Secondary-side synchronous rectification in 48 V input isolated forward or LLC converters for 5G base station power supplies. IC Role / Device Role / Timing Role: Low-voltage output switch handling up to 40 A continuous current with tight duty-cycle control. Use Value: Validated 100% UIS rating ensures survival during transformer leakage inductance spikes without external clamping. |
| Industrial Motor Drive Gate Drivers | Automotive ADAS Power Management |
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC auxiliary supplies. IC Role / Device Role / Timing Role: Regulated 5 V/3.3 V LDO replacement with higher current capability and lower dropout. Use Value: 46 A rating and low RDS(ON) allow single-device implementation of 3 A sustained loads with <0.1 V dropout at full current. |
Use Scenario: Power switch for camera module or radar sensor supply in automotive ADAS ECUs operating from 12 V battery rail. IC Role / Device Role / Timing Role: Load switch with overcurrent and thermal protection enabled via external circuitry. Use Value: Junction temperature range (−55 to +175 °C) and 100% Rg test support AEC-Q101-compliant system qualification when paired with appropriate gate driver. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(ON) = 9.5 mΩ @ 10 V; Qg = 25 nC; TO-252 package; higher gate charge increases driver loss at >500 kHz. | Validated for telecom DC/DC but lacks 100% UIS test documentation; requires additional snubber in high-di/dt flyback designs. | Prefer AOD536 where high-frequency efficiency and ruggedness are prioritized over cost-sensitive, lower-frequency use cases. |
| DMN3028LSD-13 | RDS(ON) = 8.0 mΩ @ 10 V; Qg = 16 nC; same TO-252 footprint; slightly lower RDS(ON) but no published EAS rating. | Used in consumer power adapters; not qualified for industrial temperature cycling or 100% UIS screening per datasheet. | Select AOD536 when system-level reliability demands validated avalanche energy and production lot traceability for mission-critical power stages. |
Compared with IRF7470PBF and DMN3028LSD-13, the AOD536 delivers superior thermal performance (RθJC = 4 °C/W), guaranteed UIS robustness, and tighter gate resistance distribution-critical for high-volume, high-reliability server and telecom power designs.
Availability
AOD536 is available at Aetrix Electronics and suitable for server point-of-load converters, telecom isolated DC/DC modules, and industrial motor drive auxiliary supplies requiring stable component supply and long-term manufacturing continuity.
Supply support for AOD536 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, telecom, and industrial markets.
The AOD536 belongs to AOS' αMOS LV trench MOSFET product line, engineered specifically for high-current, high-efficiency DC/DC conversion where low RDS(ON), fast switching, and ruggedness are essential.
FAQ
What is the maximum continuous drain current rating for the AOD536?
The AOD536 has a continuous drain current rating of 46 A at VGS = 10 V and TC = 25 °C. At elevated case temperatures, derating applies: 36 A at TC = 100 °C. This rating is package-limited and validated per JEDEC standards using TO-252 mounting conditions. The AOD536 must be used within these limits to ensure safe operation and long-term reliability.
Does the AOD536 support 4.5 V logic-level gate drive?
Yes, the AOD536 is fully specified for 4.5 V gate drive, with RDS(ON) guaranteed at < 14.7 mΩ and gate threshold voltage (VGS(th)) ranging from 1.4 V to 2.2 V. This allows direct interface with 5 V microcontrollers and PWM controllers without level-shifting. The AOD536 maintains low switching losses even at this drive level due to its low Qg(4.5V) (6.5–12 nC).
What thermal metrics define the AOD536's cooling requirements?
The AOD536 specifies RθJC = 4 °C/W (junction-to-case) and RθJA = 50 °C/W (junction-to-ambient, 1 in² FR-4, 2 oz Cu). For heatsink-based designs, the 4 °C/W value governs thermal design; for PCB-only cooling, the 50 °C/W value sets ambient temperature limits. The AOD536's exposed drain pad must be soldered to a thermal pad with ≥4 thermal vias for optimal performance.
Is the AOD536 rated for unclamped inductive switching (UIS)?
Yes, the AOD536 is 100% production-tested for UIS per JEDEC JESD24-1, with a rated single-pulse avalanche energy (EAS) of 29 mJ at TJ = 25 °C. This rating is confirmed using L = 0.1 mH, IAS = 36 A, and VDS spike ≤ 20.5 V. The AOD536's ruggedness makes it suitable for flyback, forward, and resonant converters where voltage overshoot occurs during turn-off.
What is the body diode forward voltage and recovery performance of the AOD536?
The AOD536 body diode exhibits VSD = 0.73–1.0 V at IS = 1 A and TJ = 25 °C, with reverse recovery charge Qrr = 20 nC and trr = 12 ns (IF = 20 A, dI/dt = 500 A/μs). These values are measured under standardized conditions and enable predictable synchronous rectification timing. The AOD536's low Qrr reduces cross-conduction loss in high-frequency buck converters.
AOD536 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 20.5A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1140 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
AOD536 FAQ
1.How can I place an order for AOD536 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOD536 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOD536 reliable?
The price and inventory of AOD536 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD536 is usually 5 days.
3.What payment methods are accepted for AOD536?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD536 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOD536?
AOD536 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOD536 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOD536?
For technical support, including AOD536 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD536 requirements.
6.How does Aetrix verify that AOD536 is sourced from the original manufacturer or authorized distributors?
All AOD536 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD536 meets industry standards.
7.What is the process for return or replacement of AOD536?
All AOD536 units undergo pre-shipment inspection (PSI). If there is an issue with AOD536, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOD536 part is unused and in its original packaging.
Return procedure for AOD536:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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