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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOD66919

Name: AOD66919
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOD66919
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOD66919

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AOD66919.pdf

Description:: N

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Product details

Overview

AOD66919 from Alpha & Omega Semiconductor is a 100V, 70A N-channel Trench Power AlphaSGT™ MOSFET in TO-252 (DPAK) package, featuring R_DS(ON) < 6.5 mΩ at V_GS = 10 V and < 8.5 mΩ at V_GS = 4.5 V, logic-level gate drive capability, and 100% UIS-tested ruggedness for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the AOD66919 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g = 47–66 nC at 10 V), fast switching (t_D(off) = 43 ns), body-diode recovery performance (Q_rr = 214 nC), thermal resistance (R_θJC = 0.8 °C/W), and RoHS 2.0 / halogen-free compliance.

Technical Context

The AOD66919 employs AlphaSGT™ trench technology to achieve optimized figure-of-merit (Q_g × R_DS(ON)), enabling high-efficiency power conversion in compact layouts. Its gate threshold voltage (V_GS(th) = 1.5–2.6 V) supports direct logic-level driving from 3.3 V or 5 V controllers without level-shifting.

Designed for unclamped inductive switching (UIS) robustness, it sustains avalanche energy (E_AS = 115 mJ) and features fully characterized dynamic parameters including C_iss = 3420 pF, C_oss = 790 pF, and Cr_ss = 14 pF at V_DS = 50 V - critical for EMI-aware SMPS design and ZVS/ZCS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage suitable for 48 V input bus and 12 V output synchronous buck stages
I_D (V_GS = 10 V)	70 A - continuous drain current rating at TC = 100 °C, enabling high-current POL converters
R_DS(ON) (V_GS = 10 V)	< 6.5 mΩ - low conduction loss yielding < 0.5 W dissipation at 20 A, reducing heatsink requirements
R_DS(ON) (V_GS = 4.5 V)	< 8.5 mΩ - ensures full enhancement with standard logic-level drivers, eliminating gate boosters
Q_g (10 V)	47–66 nC - enables efficient high-frequency operation up to 1 MHz with moderate gate driver strength
t_D(off)	43 ns - short turn-off delay supports precise timing control in phase-shifted and multiphase designs
E_AS	115 mJ - validated avalanche energy allows safe operation under transient overloads and inductive kickback

Pinout & Package

Package: TO-252 (DPAK), surface-mount, single-die configuration with exposed drain pad for thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting logic-level voltage (1.5–2.6 V threshold); requires ≤ 2.7 Ω gate resistance for optimal switching
D	Drain	Main high-side or low-side power path; electrically connected to exposed pad for thermal and current conduction
S	Source	Reference node for gate drive and current sensing; tied to power ground or switch-node return path

Key Features

Feature	Design Value
Trench Power AlphaSGT™ Technology	Delivers industry-leading Q_g × R_DS(ON) FOM for reduced switching + conduction losses in high-frequency DC-DC
Logic-Level Gate Drive	V_GS(th) range of 1.5–2.6 V enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers
100% UIS Tested	Each unit validated for unclamped inductive switching reliability-critical for automotive and industrial power supplies
100% R_g Tested	Gate resistance (0.8–2.7 Ω) verified per unit to ensure consistent switching behavior and EMI profile
RoHS 2.0 & Halogen-Free	Complies with EU Directive 2011/65/EU and IEC 61249-2-21, supporting green manufacturing and end-of-life recycling

Applications

Server VRM	Industrial DC-DC Converter
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or EPYC CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–600 kHz with tight dead-time control. Use Value: Sub-6.5 mΩ R_DS(ON) minimizes conduction loss at 60+ A per phase, while fast t_D(off) enables precise phase alignment.	Use Scenario: 48 V-to-12 V isolated or non-isolated step-down supply in PLC or motor drive control modules. IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in active clamp or LLC resonant topology. Use Value: 100 V rating and 115 mJ E_AS withstand transient surges on 48 V bus; Q_rr = 214 nC reduces diode recovery loss during hard-switching transitions.
Telecom Rectifier	Automotive On-Board Charger (OBC) Auxiliary Supply
Use Scenario: 54 V input telecom rectifier delivering 12 V/20 A to base station backplane. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage, driven by dedicated gate controller. Use Value: R_DS(ON) < 8.5 mΩ at 4.5 V gate drive eliminates need for external level shifters, simplifying layout and BOM.	Use Scenario: 400 V-to-12 V auxiliary power supply in bidirectional OBC for EVs, powering MCU, gate drivers, and sensors. IC Role / Device Role / Timing Role: Low-side switch in flyback or forward converter operating across wide ambient temperature range (−40 to +125 °C). Use Value: Junction temperature range (−55 to +150 °C) and R_θJC = 0.8 °C/W support reliable operation under engine bay thermal stress without forced cooling.

Server VRM

Industrial DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or EPYC CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–600 kHz with tight dead-time control.

Use Value: Sub-6.5 mΩ R_DS(ON) minimizes conduction loss at 60+ A per phase, while fast t_D(off) enables precise phase alignment.

Use Scenario: 48 V-to-12 V isolated or non-isolated step-down supply in PLC or motor drive control modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in active clamp or LLC resonant topology.

Use Value: 100 V rating and 115 mJ E_AS withstand transient surges on 48 V bus; Q_rr = 214 nC reduces diode recovery loss during hard-switching transitions.

Telecom Rectifier

Automotive On-Board Charger (OBC) Auxiliary Supply

Use Scenario: 54 V input telecom rectifier delivering 12 V/20 A to base station backplane.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage, driven by dedicated gate controller.

Use Value: R_DS(ON) < 8.5 mΩ at 4.5 V gate drive eliminates need for external level shifters, simplifying layout and BOM.

Use Scenario: 400 V-to-12 V auxiliary power supply in bidirectional OBC for EVs, powering MCU, gate drivers, and sensors.

IC Role / Device Role / Timing Role: Low-side switch in flyback or forward converter operating across wide ambient temperature range (−40 to +125 °C).

Use Value: Junction temperature range (−55 to +150 °C) and R_θJC = 0.8 °C/W support reliable operation under engine bay thermal stress without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	R_DS(ON) = 6.8 mΩ @ 10 V; Q_g = 52 nC; TO-252 package; no UIS rating published	Lacks documented UIS testing; slightly higher R_DS(ON) and Q_g increase conduction + switching loss	Acceptable where avalanche stress is absent and efficiency margin permits ~3% higher total loss
IRF7470PBF	R_DS(ON) = 7.0 mΩ @ 10 V; Q_g = 71 nC; TO-252; 100% UIS tested per datasheet	Higher Q_g demands stronger gate driver; slower t_D(off) (55 ns vs. 43 ns) limits max frequency	Preferred only if legacy qualification or second-source validation mandates IR part number

Compared with STL130N10F7 and IRF7470PBF, the AOD66919 delivers superior switching efficiency via lower Q_g × R_DS(ON), tighter gate resistance control, and guaranteed UIS ruggedness - making it optimal for high-reliability, high-frequency power stages where thermal headroom and transient immunity are constrained.

Availability

AOD66919 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, telecom rectifiers, and automotive auxiliary power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOD66919 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, industrial, and automotive markets.

The AOD66919 belongs to AOS' AlphaSGT™ trench MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained and thermally demanding environments.

FAQ

What is the maximum junction temperature rating for the AOD66919?

The AOD66919 has a maximum junction temperature (T_J) rating of 150 °C, validated across all absolute maximum ratings and thermal derating curves. This rating is used to calculate safe operating area (SOA), power de-rating above T_C = 100 °C, and transient thermal impedance limits. The AOD66919 must be operated within this limit to maintain reliability and avoid permanent degradation of R_DS(ON) or gate oxide integrity.

Does the AOD66919 support logic-level gate drive from a 3.3 V microcontroller?

Yes, the AOD66919 supports logic-level gate drive from 3.3 V sources due to its specified gate threshold voltage range of 1.5–2.6 V at T_J = 25 °C and 1.5–2.6 V at T_J = 125 °C. At V_GS = 4.5 V, it achieves R_DS(ON) < 8.5 mΩ - sufficient for most medium-current applications. For full 70 A conduction, 10 V gate drive is recommended, but 3.3 V can reliably switch loads up to ~15 A with acceptable R_DS(ON).

Is the AOD66919 suitable for use in an automotive-grade power supply?

Yes, the AOD66919 is suitable for automotive auxiliary power supplies such as those in on-board chargers (OBC) or ADAS domain controllers, provided system-level qualification is completed. Its −55 to +150 °C junction/storage temperature range, 100% UIS testing, and halogen-free/RoHS 2.0 compliance meet baseline automotive environmental and regulatory requirements. However, AOS does not classify it as AEC-Q101 qualified - customers must perform their own stress validation per application conditions.

What is the gate resistance (R_g) specification for the AOD66919?

The AOD66919 has a typical gate resistance (R_g) of 1.7 Ω, with min/max values of 0.8 Ω and 2.7 Ω respectively. This parameter is 100% tested per unit to ensure consistency in switching speed and EMI generation. External gate resistors should be selected to complement this intrinsic value - e.g., a 5 Ω external resistor yields total R_g ≈ 6.7 Ω, balancing dV/dt control and switching loss for 400–800 kHz operation.

How does the AOD66919's body diode performance compare to standard MOSFETs?

The AOD66919's body diode exhibits V_SD = 0.7–1.0 V at I_S = 1 A and Q_rr = 214 nC at I_F = 20 A / di/dt = 500 A/ms - significantly optimized for synchronous rectification. Compared to generic Trench MOSFETs, its lower Q_rr and soft recovery reduce reverse recovery loss and EMI. This makes the AOD66919 especially effective in hard-switched topologies where body diode conduction occurs during dead time.

AOD66919 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaSGT™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3420 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

AOD66919 FAQ

1.How can I place an order for AOD66919 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOD66919 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOD66919 reliable?

The price and inventory of AOD66919 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD66919 is usually 5 days.

3.What payment methods are accepted for AOD66919?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD66919 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOD66919?

AOD66919 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOD66919 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOD66919?

For technical support, including AOD66919 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD66919 requirements.

6.How does Aetrix verify that AOD66919 is sourced from the original manufacturer or authorized distributors?

All AOD66919 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD66919 meets industry standards.

7.What is the process for return or replacement of AOD66919?

All AOD66919 units undergo pre-shipment inspection (PSI). If there is an issue with AOD66919, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOD66919 part is unused and in its original packaging.

Return procedure for AOD66919:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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