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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON2240

Name: AON2240
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON2240
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON2240

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: AON2240.pdf

Description:: MOSFET N-CH 40V 8A 6DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON2240 from Alpha & Omega Semiconductor is a 40V N-channel enhancement-mode trench MOSFET in DFN 2×2B package, with R_DS(ON) < 21 mΩ at V_GS = 10 V and < 29 mΩ at V_GS = 4.5 V, rated for 8 A continuous drain current, and optimized for low-loss load switching in portable power management.

For engineers reviewing the AON2240 datasheet, pinout, applications, or equivalent options, key selection criteria include its 40 V V_DS, sub-29 mΩ on-resistance at 4.5 V gate drive, 6.5–12 nC total gate charge, thermal resistance of 37 °C/W (Junction-to-Ambient, t ≤ 10 s), and suitability for battery protection circuits requiring fast switching and low conduction loss.

Technical Context

The AON2240 employs advanced trench-gate silicon process to achieve high cell density and low specific on-resistance. Its gate threshold voltage (1.4–2.4 V) enables reliable turn-on with standard logic-level drivers, while its 1.1 nC Q_gd and 3 ns rise time support high-frequency PWM operation up to several hundred kHz.

Thermal performance is defined by a 37 °C/W R_θJA (t ≤ 10 s) on 1 in² FR-4 with 2 oz copper, and junction temperature range spans −55 °C to +150 °C. The integrated body diode exhibits 0.75–1.0 V forward voltage at 1 A and 3.5 nC reverse recovery charge under IF = 8 A, dI/dt = 100 A/μs conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12–24 V system rails and transient margin for automotive and industrial DC supplies.
R_DS(ON) @ V_GS=10 V	< 21 mΩ - Enables ≤1.3 W conduction loss at 8 A, reducing thermal stress in compact load-switch designs.
R_DS(ON) @ V_GS=4.5 V	< 29 mΩ - Supports direct interface with 3.3 V or 5 V microcontroller GPIO without level-shifting.
Q_g(10 V)	6.5–12 nC - Determines gate driver power requirement and switching speed; enables <15 ns t_D(off) with 3 Ω source impedance.
I_D (continuous)	8 A @ T_A=25°C - Package-limited current rating suitable for single-cell Li-ion battery protection and USB PD power path switches.
R_θJA (t ≤ 10 s)	37 °C/W - Specifies thermal rise per watt on standard PCB layout; allows ~2.7 W steady-state dissipation before reaching 150 °C junction limit.
V_GS(th)	1.4–2.4 V - Ensures robust turn-on margin across temperature and process variation with 3.3 V logic control.

Pinout & Package

Package: DFN 2×2B, thermally enhanced bottom-exposed pad, 6-pin configuration (pin 1 marked). Designed for high-current density and low-inductance PCB mounting with solderable thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (top view)	Gate	Control terminal; accepts 0–20 V gate drive; requires <12 nC charge for full enhancement.
Pins 2, 3, 5, 6 (top view)	Drain	High-side or low-side power path connection; all four pins internally paralleled for low inductance and current sharing.
Pin 4 (top view)	Source	Power return node; connects to ground or load reference; forms common node with body diode cathode.

Key Features

Feature	Design Value
Trench MOSFET technology	Delivers 21 mΩ R_DS(ON) in 2×2 mm footprint-enabling smaller PCB area vs. SO-8 equivalents.
Logic-level gate drive	Turns fully on at 4.5 V, eliminating need for external gate boosters in 3.3 V/5 V MCU-controlled systems.
Low Q_gd/Q_g ratio	1.1 nC / 6.5–12 nC - Improves switching efficiency and reduces Miller-induced shoot-through risk in half-bridge configurations.
Enhanced thermal pad	Bottom-exposed copper pad directly transfers heat to PCB plane-reducing R_θJA by >30% vs. standard DFN without thermal pad.

Applications

Battery Protection Circuit	USB Power Delivery Switch
Use Scenario: Bidirectional overcurrent and short-circuit protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET used as charge/discharge FET with integrated sense resistor feedback. Use Value: Sub-29 mΩ R_DS(ON) at 4.5 V ensures minimal voltage drop during 3–5 A discharge, preserving battery runtime and thermal headroom.	Use Scenario: Hot-swap and fault-isolation switch in USB-C PD 3.0 power path with 20 V max input. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS delivery to downstream ports. Use Value: 40 V V_DS rating accommodates 20 V PD transients; 12.5 ns trr minimizes cross-conduction loss during dynamic load transitions.
DC-DC Synchronous Rectifier	Industrial Load Switch
Use Scenario: Secondary-side synchronous rectification in isolated 12 V output flyback converters. IC Role / Device Role / Timing Role: N-channel rectifier driven by transformer-coupled gate signal; replaces Schottky diode. Use Value: 0.75 V V_SD and 3.5 nC Q_rr reduce forward loss and reverse recovery energy versus 40 V Schottky alternatives.	Use Scenario: Controlled power sequencing for FPGA I/O banks or sensor subsystems in factory automation controllers. IC Role / Device Role / Timing Role: Low-side enable switch with fast turn-off (15 ns t_D(off)) for precise timing-critical power gating. Use Value: 3 ns rise time and 2 ns fall time support <500 ns enable/disable transitions, meeting tight sequencing windows.

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Bidirectional overcurrent and short-circuit protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET used as charge/discharge FET with integrated sense resistor feedback.

Use Value: Sub-29 mΩ R_DS(ON) at 4.5 V ensures minimal voltage drop during 3–5 A discharge, preserving battery runtime and thermal headroom.

Use Scenario: Hot-swap and fault-isolation switch in USB-C PD 3.0 power path with 20 V max input.

IC Role / Device Role / Timing Role: High-side load switch controlling VBUS delivery to downstream ports.

Use Value: 40 V V_DS rating accommodates 20 V PD transients; 12.5 ns trr minimizes cross-conduction loss during dynamic load transitions.

DC-DC Synchronous Rectifier

Industrial Load Switch

Use Scenario: Secondary-side synchronous rectification in isolated 12 V output flyback converters.

IC Role / Device Role / Timing Role: N-channel rectifier driven by transformer-coupled gate signal; replaces Schottky diode.

Use Value: 0.75 V V_SD and 3.5 nC Q_rr reduce forward loss and reverse recovery energy versus 40 V Schottky alternatives.

Use Scenario: Controlled power sequencing for FPGA I/O banks or sensor subsystems in factory automation controllers.

IC Role / Device Role / Timing Role: Low-side enable switch with fast turn-off (15 ns t_D(off)) for precise timing-critical power gating.

Use Value: 3 ns rise time and 2 ns fall time support <500 ns enable/disable transitions, meeting tight sequencing windows.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LH-7	R_DS(ON) = 22 mΩ @ 4.5 V; slightly higher Q_g (13 nC); same DFN 2×2 package.	Marginally lower efficiency in 3.3 V-driven battery switches due to higher gate charge.	Preferred where higher gate drive voltage (>4.5 V) is available and cost sensitivity outweighs 5% conduction loss increase.
SiA420DJ-T1-GE3	R_DS(ON) = 24 mΩ @ 4.5 V; higher R_θJA (45 °C/W); same pinout but no exposed thermal pad.	Limited thermal headroom in sustained 6–8 A loads without additional copper pour.	Acceptable for intermittent duty-cycle applications where board space is constrained but thermal mass is limited.

Compared with DMN2020LH-7 and SiA420DJ-T1-GE3, the AON2240 delivers the lowest R_DS(ON) at 4.5 V and best thermal resistance among DFN 2×2 N-channel MOSFETs, making it optimal for space-constrained, thermally demanding load-switch and battery-protection designs.

Availability

AON2240 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial load-switching applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for AON2240 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON2240 belongs to AOS's low-voltage logic-level trench MOSFET product line, engineered specifically for compact, high-current load-switching and battery-management applications where gate-drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current rating for the AON2240?

The AON2240 is rated for 8 A continuous drain current at T_A = 25°C with proper PCB thermal design. This rating is package-limited and drops to approximately 4.5 A at T_A = 70°C. Derating must follow the R_θJA curve and maximum junction temperature of 150°C. The AON2240 datasheet specifies these limits under "Absolute Maximum Ratings" and "Thermal Characteristics" sections.

Does the AON2240 have an integrated body diode, and what are its key parameters?

Yes, the AON2240 includes an intrinsic body diode with forward voltage V_SD = 0.75–1.0 V at I_S = 1 A and reverse recovery charge Q_rr = 3.5 nC under IF = 8 A, dI/dt = 100 A/μs. These values are measured with V_GS = 0 V and confirm suitability for synchronous rectification and bidirectional current paths. The AON2240 body diode characteristics are documented in the "Electrical Characteristics" table and Figure 6.

Can the AON2240 be driven directly by a 3.3 V microcontroller GPIO?

Yes-the AON2240 has a gate threshold voltage V_GS(th) of 1.4–2.4 V and achieves R_DS(ON) < 29 mΩ at V_GS = 4.5 V, ensuring full enhancement with 3.3 V logic when used with appropriate gate series resistance (e.g., 10–22 Ω) to manage ringing. The AON2240's low Q_g (6.5–12 nC) further supports reliable switching without external level shifters.

What is the thermal resistance (R_θJA) of the AON2240, and how is it measured?

The AON2240 has R_θJA = 37 °C/W for t ≤ 10 s, measured on a 1 in² FR-4 board with 2 oz copper in still air at T_A = 25°C. This value reflects real-world thermal performance under pulsed conditions. For steady-state design, use R_θJA = 66 °C/W (t → ∞). Both values are specified in the "Thermal Characteristics" section of the AON2240 datasheet and validated per JEDEC JESD51-2.

Is the AON2240 suitable for use in automotive applications?

The AON2240 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. It operates across −55 °C to +150 °C junction temperature and meets industrial reliability standards, but lacks automotive-grade qualification, stress testing, and PPAP documentation. For automotive use, AOS offers AEC-Q101-compliant variants such as the AON6254; the AON2240 remains appropriate for industrial, computing, and consumer applications.

AON2240 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 21mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 415 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-DFN (2x2)

AON2240 FAQ

1.How can I place an order for AON2240 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON2240 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON2240 reliable?

The price and inventory of AON2240 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON2240 is usually 5 days.

3.What payment methods are accepted for AON2240?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON2240 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON2240?

AON2240 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON2240 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON2240?

For technical support, including AON2240 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON2240 requirements.

6.How does Aetrix verify that AON2240 is sourced from the original manufacturer or authorized distributors?

All AON2240 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON2240 meets industry standards.

7.What is the process for return or replacement of AON2240?

All AON2240 units undergo pre-shipment inspection (PSI). If there is an issue with AON2240, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON2240 part is unused and in its original packaging.

Return procedure for AON2240:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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