Alpha & Omega Semiconductor Inc. AON6156

Overview

AON6156 from Alpha & Omega Semiconductor is a 45V, 100A N-channel Trench Power MV MOSFET in DFN5x6 package, featuring R_DS(ON) < 2.6 mΩ at V_GS = 10 V and < 4 mΩ at V_GS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters and industrial motor drives.

For engineers reviewing the AON6156 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g = 50–70 nC), fast switching (t_on = 11 ns, t_off = 38 ns), 100% UIS-tested ruggedness, and thermal performance with R_θJC = 1.6 °C/W.

Technical Context

The AON6156 employs Trench Power MV MOSFET technology to achieve ultra-low on-resistance and minimized switching losses. Its gate threshold voltage (1.5–2.5 V) enables robust 4.5 V logic-level drive compatibility, while low Q_gd/Q_g ratio (5 nC / 50–70 nC) supports high dv/dt immunity in hard-switching topologies.

Thermal design is enabled by a 1.6 °C/W junction-to-case resistance and validated avalanche energy rating (E_AS = 154 mJ). The device is fully characterized for safe operating area (SOA) up to 10 ms pulse width at T_C = 25 °C, with current derating defined to 29 A at T_C = 100 °C.

Key Specifications

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height, exposed thermal pad), bottom-side thermal interface, RoHS-compliant, halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP036N04L and SiR626DP, the AON6156 offers higher V_DS margin (45 V), DFN5x6 thermal performance (R_θJC = 1.6 °C/W), and factory-validated UIS ruggedness-making it preferred for industrial and telecom 48 V systems requiring long-term reliability under transient stress.

Availability

AON6156 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, and telecom DC/DC converters requiring stable component supply, high-current capability, and proven avalanche robustness.

Supply support for AON6156 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, industrial, and automotive markets.

The AON6156 belongs to AOS' Trench Power MV MOSFET product line, engineered specifically for high-efficiency, high-current switching in 12–48 V power conversion systems where low R_DS(ON), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for the AON6156?

The AON6156 supports 100 A continuous drain current at T_C = 25 °C, derating to 29 A at T_C = 100 °C per the datasheet's current de-rating curve. This rating is package-limited and assumes proper PCB copper area and thermal interface to maintain case temperature within specification. The AON6156 must be mounted with its exposed thermal pad soldered to a minimum 1-in² 2-oz copper pour for rated performance.

Does the AON6156 support 4.5 V logic-level gate drive?

Yes, the AON6156 is fully specified for 4.5 V gate drive: R_DS(ON) is guaranteed < 4 mΩ at V_GS = 4.5 V and I_D = 20 A, and gate threshold voltage ranges from 1.5 V to 2.5 V at 25 °C. This ensures reliable turn-on with standard 5 V microcontrollers and PWM controllers without requiring level-shifting circuitry. The AON6156 maintains stable operation across its full –55 to +150 °C junction temperature range under 4.5 V drive.

What thermal resistance values apply to the AON6156 in a typical PCB layout?

In a standard 1-in² FR-4 board with 2-oz copper, the AON6156 exhibits R_θJA = 50 °C/W (steady-state) and R_θJC = 1.6 °C/W. The latter enables direct heatsink attachment for high-power applications. For optimal thermal performance, the exposed thermal pad must be fully soldered to a solid copper plane with ≥6 thermal vias (0.3 mm diameter) connecting to inner or backside ground planes. The AON6156's R_θJC value is measured with the device mounted to a large heatsink, confirming its suitability for thermally constrained designs.

Is the AON6156 qualified for automotive applications?

The AON6156 is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications. While it operates across –55 to +150 °C and includes 100% UIS and R_g testing, it lacks automotive-specific qualification documentation, PPAP support, and zero-defect screening. For automotive ADAS or body electronics, AOS offers AEC-Q101-qualified alternatives such as the AONR21312. The AON6156 remains appropriate for non-safety-critical automotive auxiliary power supplies where full qualification is not mandated.

How does the AON6156's body diode performance compare to discrete Schottky diodes?

The AON6156's integrated body diode has V_SD = 0.67–1.0 V at I_S = 1 A and reverse recovery charge Q_rr = 43 nC, offering lower forward drop than many 45 V Schottkys but higher Q_rr than ultra-fast silicon carbide diodes. In synchronous rectification, the body diode conducts only during dead time; its low V_SD reduces freewheeling loss, while controlled Q_rr minimizes voltage spikes. For best results, the AON6156 should be paired with precise gate timing to minimize body diode conduction time-especially critical in the AON6156's high-frequency applications.