Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AON6202

Part No.:
AON6202
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerSMD, Flat Leads
Datasheet:
AetrixAON6202.pdf
Description:
MOSFET N-CH 30V 21A/24A 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,490

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AON6202 from Alpha & Omega Semiconductor is a 30 V, 42 A, 3.5 mΩ N-channel MOSFET in a 5 mm × 6 mm DFN package with exposed drain pad, optimized for high-efficiency DC-DC power conversion in server VRMs and POL converters.

For engineers reviewing the AON6202 datasheet, pinout, applications, or equivalent options, key selection criteria include RDS(on) at 10 V and 4.5 V gate drive, Qg of 17 nC, thermal resistance (RθJA = 40 °C/W), and RoHS-compliant halogen-free packaging.

Technical Context

The AON6202 uses trench-gate silicon process technology to achieve low on-resistance and fast switching performance. It supports synchronous rectification in buck converters and operates with gate threshold voltage (VGS(th)) of 1.8 V typical and maximum 2.7 V.

Designed for 4.5 V–10 V gate drive, the device delivers 42 A continuous drain current (ID) at TC = 100 °C and withstands 30 V VDSS with 100% UIS-rated avalanche energy capability per JEDEC JESD22-A109.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - Maximum drain-source blocking voltage for 12 V input rail applications
RDS(on) @ VGS = 10 V3.5 mΩ - Enables <1 W conduction loss at 15 A in high-current POL stages
RDS(on) @ VGS = 4.5 V5.2 mΩ - Ensures robust operation with 5 V gate drive in controller-based designs
Qg17 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength
ID (continuous, TC = 100 °C)42 A - Sustains high current density in compact thermally enhanced DFN-5×6
RθJA40 °C/W - Requires minimal copper area for thermal management on 2-layer PCBs

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height, exposed drain pad, 5-pin configuration).

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4SourceCommon source connection; electrically tied to exposed drain pad via internal substrate for low-inductance return path
5GateControl terminal; accepts standard logic-level or PWM gate drive signals
Exposed PadDrainMain power output node; must be soldered to large PCB copper pour for thermal and electrical performance

Key Features

FeatureDesign Value
Halogen-free constructionMeets AOS Green Policy: Br/Cl <900 ppm each, total Br+Cl <1500 ppm - eliminates corrosive halogen emissions during PCB reflow and end-of-life disposal
Trench MOSFET architectureEnables 3.5 mΩ RDS(on) at 10 V while maintaining 100% rated UIS avalanche capability - improves reliability in transient overload conditions
Low Qg/Qgd ratioQg = 17 nC, Qgd = 5.5 nC - reduces switching losses and EMI in high-frequency synchronous buck topologies
Enhanced thermal padExposed drain pad with 35 mm² contact area - achieves 40 °C/W RθJA on 1 oz Cu, 2-layer board without thermal vias

Applications

Server VRM Power StageIndustrial DC-DC Converter

Use Scenario: Primary high-side switch in 48 V-to-12 V intermediate bus converter for rack-mounted servers.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated gate driver IC with 10 V gate drive.

Use Value: 3.5 mΩ RDS(on) minimizes conduction loss at 30 A load, enabling >95% efficiency at full load.

Use Scenario: Synchronous rectifier in isolated 24 V input, 5 V/20 A output flyback converter for factory automation controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal referenced to secondary ground.

Use Value: 5.2 mΩ RDS(on) at 4.5 V enables efficient operation with low-voltage gate drive, reducing heat sink requirements.

Telecom PoE PSEAutomotive ADAS Power Supply

Use Scenario: Hot-swap MOSFET in IEEE 802.3bt Type 4 PoE++ power sourcing equipment interface.

IC Role / Device Role / Timing Role: Inrush current limiter and fault protection switch placed between DC input and PD interface.

Use Value: 100% UIS-rated avalanche capability handles repetitive 100 V inductive turn-off transients without failure.

Use Scenario: Main switch in 12 V input, 3.3 V/10 A buck converter supplying image sensor and radar SoC in automotive camera module.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 2 MHz with 5 V gate drive from integrated controller.

Use Value: 40 °C/W RθJA allows operation up to 105 °C ambient without derating on compact 4-layer PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon BSC020N03LSRDS(on) = 2.0 mΩ @ 10 V; higher gate charge (Qg = 22 nC); same DFN5x6 packageBetter conduction loss but higher switching loss at >1 MHz; requires stronger gate driverSelect BSC020N03LS only when minimizing I²R loss dominates over switching loss and gate drive capability permits.
Vishay SiR872DPRDS(on) = 3.8 mΩ @ 10 V; Qg = 15.5 nC; thermally enhanced PowerPAK® SO-8 packageLarger footprint; higher RθJA (50 °C/W); not halogen-free certifiedChoose SiR872DP only if existing SO-8 layout prohibits DFN adoption and halogen-free compliance is not required.

Compared with BSC020N03LS and SiR872DP, the AON6202 offers balanced conduction-switching trade-off, halogen-free certification, and superior thermal performance per unit area-making it optimal for space-constrained, high-reliability 12 V–48 V power stages where regulatory compliance and board-area efficiency are critical.

Availability

AON6202 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom PoE PSE applications requiring stable component supply, halogen-free compliance, and high-current DFN packaging.

Supply support for AON6202 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AON6202 belongs to AOS's NextPower™ family of low-RDS(on) trench MOSFETs designed specifically for high-efficiency, high-density point-of-load and intermediate bus power conversion.

FAQ

What is the maximum junction temperature rating for the AON6202?

The AON6202 has a maximum rated junction temperature (TJ) of 150 °C per its official datasheet. This rating applies under continuous operation with proper PCB thermal design-specifically, a minimum 35 mm² exposed drain pad connected to inner-layer copper planes. Exceeding this limit risks parametric shift and long-term reliability degradation. The AON6202 must be operated within this thermal boundary to maintain specified RDS(on), VGS(th), and avalanche performance across its lifetime.

Does the AON6202 support 4.5 V gate drive in synchronous buck applications?

Yes, the AON6202 is fully characterized for 4.5 V gate drive, with RDS(on) = 5.2 mΩ typical at VGS = 4.5 V and ID = 10 A. Its gate threshold voltage (VGS(th)) ranges from 1.8 V to 2.7 V, ensuring reliable turn-on with standard 5 V controller outputs. In synchronous buck converters using integrated controllers like the MP2315 or ISL95210, the AON6202 delivers predictable timing and low shoot-through risk due to its well-controlled Qgd/Qg ratio-critical for stable operation at 1–2 MHz switching frequencies.

Is the AON6202 halogen-free and RoHS compliant?

Yes, the AON6202 is manufactured under AOS's Green Policy and is both RoHS compliant and halogen-free. Per AOS documentation, it meets Br <900 ppm, Cl <900 ppm, and total Br+Cl <1500 ppm on homogeneous material level. No "L" suffix is required-the AON6202 part number itself denotes the halogen-free version, as all DFN5x6 packages were converted to green status by end of 2010. This ensures compliance with IEC 61249-2-21 and JEDEC JS709C standards.

What is the avalanche energy rating of the AON6202?

The AON6202 is 100% rated for Unclamped Inductive Switching (UIS) per JEDEC JESD22-A109. Its single-pulse avalanche energy (EAS) is 115 mJ at TJ = 25 °C and 72 mJ at TJ = 125 °C, tested with L = 0.1 mH, IAR = 20 A, and VDD = 30 V. This rating confirms robustness against inductive turn-off transients in hot-swap, motor drive, and PoE circuits-no derating or external snubbers needed for typical 30 V rail applications where the AON6202 is deployed.

Can the AON6202 be used as a high-side switch with bootstrap gate drive?

Yes, the AON6202 is commonly used as a high-side switch in synchronous buck converters with bootstrap gate drive. Its VGS(max) of ±20 V accommodates typical bootstrap voltages up to 12–15 V, and its 17 nC total gate charge ensures compatibility with standard gate drivers such as the IR2110 or LM5113. Layout best practices-including short gate loop, low-inductance source return, and proper bootstrap capacitor sizing (≥0.1 µF ceramic)-are essential to prevent shoot-through and ensure clean switching edges when using the AON6202 in high-side configurations.

AON6202 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
8-PowerSMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2200 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
4.2W (Ta), 35W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

AON6202 FAQ

1.How can I place an order for AON6202 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6202 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6202 reliable?

The price and inventory of AON6202 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6202 is usually 5 days.

3.What payment methods are accepted for AON6202?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6202 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6202?

AON6202 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6202 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6202?

For technical support, including AON6202 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6202 requirements.

6.How does Aetrix verify that AON6202 is sourced from the original manufacturer or authorized distributors?

All AON6202 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6202 meets industry standards.

7.What is the process for return or replacement of AON6202?

All AON6202 units undergo pre-shipment inspection (PSI). If there is an issue with AON6202, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6202 part is unused and in its original packaging.

Return procedure for AON6202:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AON6202 Tags

  • AON6202
  • AON6202 PDF
  • AON6202 Datasheet
  • AON6202 Specifications
  • AON6202 Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AON6202
  • Buy AON6202
  • AON6202 Price
  • AON6202 Distributor
  • AON6202 Supplier
  • AON6202 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER