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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6230

Name: AON6230
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6230
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON6230

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AON6230.pdf

Description:: MOSFET N-CH 40V 57.5A/85A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON6230 from Alpha & Omega Semiconductor is a 40V N-channel trench MOSFET optimized for high-frequency switching in power conversion stages. It delivers 85A continuous drain current at V_GS=10V, <1.44mΩ R_DS(ON), and ultra-low gate charge (Q_g=81–114nC), enabling high-efficiency synchronous rectification in telecom and industrial DC-DC converters.

For engineers reviewing the AON6230 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN5x6 package thermal performance (R_θJC=1.2°C/W), 100% UIS-tested ruggedness, and validated operation in boost converter topologies with fast switching (t_r=6.5ns, t_f=11.5ns).

Technical Context

The AON6230 employs trench-gate silicon technology to simultaneously minimize conduction loss (via low R_DS(ON)) and switching loss (via low C_iss=6050pF, C_oss=1640pF, and Q_g as low as 35nC at 4.5V). Its gate threshold voltage (1.2–2.3V) supports both 4.5V and 10V drive logic levels.

This MOSFET is characterized for operation across –55°C to +150°C junction temperature, with 100% avalanche energy testing (E_AS=45.5mJ) and 100% gate resistance screening (R_g=0.5–1.7Ω). The device's body diode exhibits low reverse recovery charge (Q_rr=98nC) and fast trr=28ns, critical for synchronous rectifier reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40V - Maximum blocking voltage compatible with 36V nominal input systems and 48V telecom rails.
I_D (V_GS=10V)	85A - Continuous current capability enables high-power density designs without forced air cooling.
R_DS(ON) (V_GS=10V)	<1.44mΩ - Low conduction loss reduces I²R heating in high-current paths like server VRMs.
Q_g (10V)	81–114nC - Enables efficient gate driving at >500kHz switching frequencies with minimal driver power loss.
R_θJC	1.2°C/W - High thermal conductivity from die to exposed pad supports >7W steady-state dissipation with minimal heatsinking.
E_AS	45.5mJ - Confirmed unclamped inductive switching robustness for hard-switched flyback and LLC resonant converters.
C_iss/C_oss	6050pF / 1640pF - Low capacitance ratio improves zero-voltage switching (ZVS) margin in soft-switching topologies.

Pinout & Package

Package: DFN5x6 (5mm × 6mm, 1.0mm height), thermally enhanced with exposed drain pad on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 8, 7, 6	Drain (D)	Multiple parallel drain terminals reduce package inductance and improve current sharing in high-di/dt applications.
5	Gate (G)	Single gate input with R_g = 0.5–1.7Ω - optimized for direct microcontroller or gate driver interface without external series resistance.
S (exposed pad)	Source (S)	Thermally and electrically connected source pad - requires PCB copper pour for optimal thermal transfer and low-inductance return path.

Key Features

Feature	Design Value
Trench MOSFET architecture	Enables simultaneous optimization of R_DS(ON), Q_g, and C_oss - critical for high-efficiency, high-frequency SMPS.
100% UIS tested	Guarantees reliable operation under transient overcurrent conditions without derating, reducing need for external protection circuitry.
Low Q_gd/Q_g ratio (≈16%)	Minimizes Miller plateau duration, improving controllability during hard switching and reducing risk of shoot-through.
Body diode with Q_rr=98nC	Reduces reverse recovery losses and EMI in synchronous rectifier configurations versus standard Schottky alternatives.
DFN5x6 with exposed drain	Provides 3× lower R_θJA than SO-8 equivalents - enables compact, fanless designs in space-constrained power modules.

Applications

Server VRM Phase Legs	Telecom 48V Intermediate Bus Converters
Use Scenario: High-current, high-efficiency buck converter delivering 12V/100A+ to CPU/GPU cores in data center servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600kHz with tight duty-cycle control. Use Value: Sub-1.5mΩ R_DS(ON) and 1.2°C/W R_θJC enable >95% efficiency at full load while maintaining TJ <125°C without heatsinks.	Use Scenario: Isolated half-bridge or full-bridge DC-DC stage converting 48V input to 12V/24V for base station RF power amplifiers. IC Role / Device Role / Timing Role: Primary-side switching FET in hard-switched or phase-shifted ZVS topology. Use Value: Low C_oss and fast t_f=11.5ns reduce switching losses and improve light-load efficiency over competing TOLL or TO-220 devices.
Industrial LED Backlight Drivers	USB-C PD Programmable Power Supply Outputs
Use Scenario: Boost converter driving constant-current strings of high-brightness LEDs in factory automation displays. IC Role / Device Role / Timing Role: Main power switch in fixed-frequency PWM-controlled boost stage. Use Value: 100% UIS qualification ensures immunity to inductive kickback from open-circuit LED string faults.	Use Scenario: Secondary-side synchronous rectifier in 65W–100W USB-C PD adapters supporting 20V/5A output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated SR controller IC. Use Value: Fast body diode recovery (t_rr=28ns) and low V_SD=0.67V minimize conduction loss and cross-conduction risk during dead-time transitions.

Server VRM Phase Legs

Telecom 48V Intermediate Bus Converters

Use Scenario: High-current, high-efficiency buck converter delivering 12V/100A+ to CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600kHz with tight duty-cycle control.

Use Value: Sub-1.5mΩ R_DS(ON) and 1.2°C/W R_θJC enable >95% efficiency at full load while maintaining TJ <125°C without heatsinks.

Use Scenario: Isolated half-bridge or full-bridge DC-DC stage converting 48V input to 12V/24V for base station RF power amplifiers.

IC Role / Device Role / Timing Role: Primary-side switching FET in hard-switched or phase-shifted ZVS topology.

Use Value: Low C_oss and fast t_f=11.5ns reduce switching losses and improve light-load efficiency over competing TOLL or TO-220 devices.

Industrial LED Backlight Drivers

USB-C PD Programmable Power Supply Outputs

Use Scenario: Boost converter driving constant-current strings of high-brightness LEDs in factory automation displays.

IC Role / Device Role / Timing Role: Main power switch in fixed-frequency PWM-controlled boost stage.

Use Value: 100% UIS qualification ensures immunity to inductive kickback from open-circuit LED string faults.

Use Scenario: Secondary-side synchronous rectifier in 65W–100W USB-C PD adapters supporting 20V/5A output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated SR controller IC.

Use Value: Fast body diode recovery (t_rr=28ns) and low V_SD=0.67V minimize conduction loss and cross-conduction risk during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N04L	R_DS(ON)=0.45mΩ @ 10V (lower), Q_g=120nC (higher), TO-252 package	Higher thermal mass but larger footprint; less suitable for ultra-thin power modules	Prefer when board-level thermal mass is available and layout area is not constrained.
Vishay SiR626DP	R_DS(ON)=1.55mΩ @ 10V (slightly higher), Q_g=72nC (lower), PowerPAK® 5x6	Lower gate charge improves driver efficiency but slightly higher conduction loss increases full-load heating	Prefer when gate drive power budget is limited and peak current is ≤75A.

Compared with IPP040N04L and SiR626DP, the AON6230 offers the best balance of ultra-low R_DS(ON), moderate Q_g, and industry-leading thermal resistance in a compact DFN5x6 - making it optimal for high-density, high-efficiency 40V synchronous rectifiers where board space and thermal headroom are tightly constrained.

Availability

AON6230 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial LED backlight drivers requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for AON6230 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, communications, and industrial markets.

The AON6230 belongs to AOS's NextPower™ trench MOSFET family, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space- and thermally-constrained applications such as data center power supplies and 5G infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for the AON6230 at 100°C case temperature?

The AON6230 supports 66A continuous drain current at T_C=100°C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits of the DFN5x6 package under real-world PCB thermal conditions and ensures safe operation without exceeding the 150°C maximum junction temperature. Designers must verify actual case temperature via thermal simulation or measurement when using the AON6230 in high-power applications.

Does the AON6230 have integrated ESD protection on the gate terminal?

The AON6230 does not include integrated gate ESD protection diodes. Its gate-source voltage rating is ±20V, and gate leakage (I_GSS) is specified at ±100nA - confirming standard MOSFET gate oxide structure. External gate protection (e.g., 12V Zener clamp) is recommended in systems exposed to handling or system-level ESD events per IEC 61000-4-2.

Can the AON6230 be used in a synchronous buck converter with 4.5V gate drive?

Yes, the AON6230 is fully specified for 4.5V gate drive: R_DS(ON) is guaranteed <2.1mΩ at V_GS=4.5V, and Q_g(4.5V) is 35–50nC. Its gate threshold voltage range (1.2–2.3V) ensures strong enhancement-mode turn-on with standard 3.3V or 5V logic-level drivers, making the AON6230 suitable for low-voltage control architectures without level-shifting circuitry.

What is the significance of the "100% Rg Tested" specification for the AON6230?

The "100% Rg Tested" specification means every AON6230 unit undergoes production test for gate resistance (R_g = 0.5–1.7Ω), ensuring consistent switching behavior and predictable gate drive requirements. This eliminates batch-to-batch variation in Miller effect and switching speed, critical for timing-critical topologies like multiphase VRMs where gate drive timing skew must be minimized across parallel phases.

Is the AON6230 RoHS-compliant and halogen-free?

Yes, the AON6230 is RoHS-compliant and halogen-free per AOS' standard product specifications and material declarations. The device meets JEDEC J-STD-609 Category 1 for moisture sensitivity (MSL3), and its DFN5x6 package uses lead-free matte tin plating. Full compliance documentation, including IPC-1752A material declarations, is available through AOS' quality portal upon request.

AON6230 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 57.5A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.44mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6050 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 7.4W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6230 FAQ

1.How can I place an order for AON6230 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6230 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6230 reliable?

The price and inventory of AON6230 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6230 is usually 5 days.

3.What payment methods are accepted for AON6230?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6230 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6230?

AON6230 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6230 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6230?

For technical support, including AON6230 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6230 requirements.

6.How does Aetrix verify that AON6230 is sourced from the original manufacturer or authorized distributors?

All AON6230 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6230 meets industry standards.

7.What is the process for return or replacement of AON6230?

All AON6230 units undergo pre-shipment inspection (PSI). If there is an issue with AON6230, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6230 part is unused and in its original packaging.

Return procedure for AON6230:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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