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Alpha & Omega Semiconductor Inc. AON6282
- Part No.:
- AON6282
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AON6282.pdf
- Description:
- MOSFET N-CH 80V 26.5A/85A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,692
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Product details
Overview
AON6282 from Alpha & Omega Semiconductor is an 80V N-channel trench MOSFET optimized for high-frequency switching in power conversion stages. It delivers 85A continuous drain current at VGS=10V, <5.6mΩ RDS(ON), and low gate charge (Qg=36.5–51nC), enabling high-efficiency boost converters and synchronous rectifiers in telecom and industrial power supplies.
For engineers reviewing the AON6282 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN5x6 package thermal performance (RθJC=1.5°C/W), 100% UIS-tested ruggedness, and verified body-diode recovery (Qrr=126nC, trr=30ns) for hard-switched topologies.
Technical Context
The AON6282 employs trench-gate silicon MOSFET architecture with tightly controlled threshold voltage (2.3–3.5V) and low output capacitance (Coss=392pF at VDS=40V), minimizing switching losses in DC-DC converters operating above 100kHz. Its 100% Rg testing ensures gate resistance consistency (0.6–2.1Ω), critical for parallel operation and EMI control.
This device supports unclamped inductive switching (UIS) up to 21A peak avalanche current and features a robust body diode with forward voltage of 0.71V at 1A, enabling reliable synchronous rectification without external Schottky diodes in buck-derived topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80V maximum - supports 48V input systems with 20% margin for transient overvoltage. |
| ID (VGS=10V) | 85A continuous - enables single-device implementation in 200W–300W power stages. |
| RDS(ON) (VGS=10V) | <5.6mΩ - reduces conduction loss to <0.4W at 85A, easing thermal design in DFN5x6 package. |
| Qg (10V) | 36.5–51nC - allows fast turn-on with moderate gate drive strength (e.g., 1A driver). |
| Ciss/Coss | 2848pF / 392pF - low Coss minimizes turn-off energy loss in hard-switched applications. |
| trr/Qrr | 30ns / 126nC - enables efficient synchronous rectification in 500kHz+ LLC or phase-shifted full-bridge designs. |
| RθJC | 1.5°C/W - permits >70W power dissipation with minimal heatsinking when mounted to PCB copper pour. |
Pinout & Package
Package: DFN5x6 (5.0mm × 6.0mm, 1.0mm height), exposed drain pad on bottom side for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D) | Internally connected to exposed metal pad - primary current path and thermal conduction path to PCB. |
| 5 | Source (S) | Low-side reference node; connects to power ground plane; carries full load current in low-side switch configuration. |
| 6 | Gate (G) | High-impedance control terminal; requires 3.5–10V drive; gate resistance 0.6–2.1Ω affects switching speed and ringing. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees survival under unclamped inductive switching stress up to 21A peak, eliminating need for external snubbers in flyback/LLC. |
| Trench MOSFET architecture | Delivers lowest RDS(ON) × Qg figure-of-merit (FoM) in its 80V class, improving efficiency at 200–500kHz switching frequencies. |
| Low Coss and Crss | Coss=392pF and Crss=22.5pF reduce Miller-induced turn-on risk and enable ZVS in resonant topologies. |
| Body diode with soft recovery | Qrr=126nC and trr=30ns minimize reverse-recovery loss and EMI during freewheeling in synchronous rectifiers. |
| 100% Rg tested | Ensures gate resistance between 0.6–2.1Ω across production lot, supporting predictable gate-drive timing and paralleling stability. |
Applications
| Boost Converters | Synchronous Rectifiers |
|---|---|
|
Use Scenario: High-efficiency 48V-to-12V/24V boost stage in telecom power shelves and server VRMs. IC Role / Device Role / Timing Role: Main power switch handling 85A continuous current with <5.6mΩ conduction loss. Use Value: Enables >97% efficiency at 200kHz due to low RDS(ON) and Qg, reducing heatsink size by 40% vs. legacy 80V MOSFETs. |
Use Scenario: Secondary-side synchronous rectification in isolated 500W LLC resonant converters for data center PSUs. IC Role / Device Role / Timing Role: Low-side rectifier replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: Eliminates 0.5V forward drop loss, cutting secondary-side conduction loss by 65% and enabling 10°C cooler operation. |
| LED Backlighting | Industrial Power Supplies |
|
Use Scenario: Constant-current LED driver for large-panel LCD backlighting requiring precise dimming and low EMI. IC Role / Device Role / Timing Role: High-side PWM switch controlling 10–20A LED strings at 100–500kHz. Use Value: Low Coss and Crss suppress voltage spikes during turn-off, meeting CISPR-22 Class B EMI limits without added filtering. |
Use Scenario: Input-stage PFC and output-stage DC-DC in DIN-rail mounted 3kW industrial power supplies. IC Role / Device Role / Timing Role: Critical switching element in interleaved totem-pole PFC and synchronous buck regulators. Use Value: 100% UIS rating ensures reliability under line surges and load transients common in factory-floor environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N08N | RDS(ON)=4.0mΩ @10V but larger TO-220 package (RθJA=62°C/W); no UIS rating specified. | Better conduction loss but higher thermal resistance; unsuitable for compact DFN-based layouts. | Prefer AON6282 where board space and thermal management via PCB copper are prioritized over absolute RDS(ON). |
| Vishay SiR872DP | Same DFN5x6 package; RDS(ON)=6.2mΩ @10V; Qg=42nC; 100% UIS tested but lower ID=70A. | Near drop-in replacement with slightly higher conduction loss and reduced current headroom. | Acceptable alternative if 85A rating is not required and existing layout accommodates same footprint. |
Compared with IPP040N08N and SiR872DP, the AON6282 provides optimal balance of low RDS(ON), ultra-low Qg, and proven UIS ruggedness in a thermally efficient DFN5x6 package-making it preferred for space-constrained, high-frequency power stages demanding reliability under transient stress.
Availability
AON6282 is available at Aetrix Electronics and suitable for boost converters, synchronous rectifiers, LED backlighting drivers, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AON6282 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AON6282 belongs to AOS's TrenchFET® Gen V family, engineered specifically for high-frequency, high-efficiency power conversion in compact form factors where thermal performance and switching loss minimization are critical.
FAQ
What is the maximum continuous drain current rating for the AON6282?
The AON6282 is rated for 85A continuous drain current at VGS=10V and TC=25°C. At elevated case temperatures, derating applies: 56A at TC=70°C and 200A pulsed (t ≤ 10s). This rating is package-limited and validated per JEDEC standards using the DFN5x6 footprint with adequate PCB copper thermal mass.
Does the AON6282 have a specified avalanche energy rating?
Yes-the AON6282 is 100% unclamped inductive switching (UIS) tested. Its single-pulse avalanche energy rating is derived from test conditions yielding 21A peak avalanche current at tA=10ms (EAS ≈ ½ × L × I²). The device meets AEC-Q101 stress requirements for ruggedness in automotive-adjacent industrial applications.
Can the AON6282 be used in synchronous rectification without external gate driving circuitry?
No-the AON6282 requires active gate drive. Its gate threshold voltage (2.3–3.5V) and 0.6–2.1Ω gate resistance necessitate a dedicated gate driver IC or transformer-coupled circuit to ensure clean turn-on/turn-off. It does not integrate bootstrap or self-driven functionality; use in synchronous rectifiers depends on external timing control matching the primary-side switching waveform.
What is the thermal resistance from junction to case (RθJC) for the AON6282?
The AON6282 has a maximum junction-to-case thermal resistance (RθJC) of 1.5°C/W, measured with the device mounted to a large heatsink. This value enables >70W steady-state power dissipation when the case temperature is held at 100°C, assuming TJ(MAX)=150°C. PCB layout must expose the drain pad to ≥1in² of 2oz copper for optimal thermal transfer.
Is the AON6282 pin-compatible with other DFN5x6 80V MOSFETs like the SiR872DP?
The AON6282 shares the standard DFN5x6 (5.0×6.0mm) outline and 8-pin pinout (Drain–Source–Gate configuration) with Vishay SiR872DP and ON Semi NTMFS4C09N. However, pin compatibility alone does not guarantee functional interchangeability-gate drive requirements, RDS(ON), and UIS capability differ, so validation in the target circuit is required before substitution.
AON6282 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 26.5A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2848 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AON6282 FAQ
1.How can I place an order for AON6282 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON6282 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON6282 reliable?
The price and inventory of AON6282 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6282 is usually 5 days.
3.What payment methods are accepted for AON6282?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6282 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON6282?
AON6282 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON6282 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON6282?
For technical support, including AON6282 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6282 requirements.
6.How does Aetrix verify that AON6282 is sourced from the original manufacturer or authorized distributors?
All AON6282 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6282 meets industry standards.
7.What is the process for return or replacement of AON6282?
All AON6282 units undergo pre-shipment inspection (PSI). If there is an issue with AON6282, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON6282 part is unused and in its original packaging.
Return procedure for AON6282:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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