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Alpha & Omega Semiconductor Inc. AON6298
- Part No.:
- AON6298
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AON6298.pdf
- Description:
- MOSFET N-CH 100V 14.5A/46A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,059
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Product details
Overview
AON6298 from Alpha & Omega Semiconductor is a 100V N-Channel trench MOSFET optimized for high-frequency switching, delivering RDS(ON) < 16.5 mΩ at VGS = 10 V, 46 A continuous drain current, and 100% UIS-tested ruggedness - deployed in synchronous rectifiers and boost converters for telecom and industrial power supplies.
For engineers reviewing the AON6298 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN5x6 package thermal performance (RθJC = 1.6 °C/W), low gate charge (Qg = 23 nC max), and body-diode recovery characteristics (trr = 30 ns, Qrr = 132 nC) critical for ZVS and high-efficiency SMPS design.
Technical Context
The AON6298 employs trench-gate silicon technology to simultaneously minimize conduction loss (via ultra-low RDS(ON)) and switching loss (via low Ciss = 1307 pF, Coss = 127 pF, and Qgd = 3 nC). Its gate threshold voltage (2.4–3.4 V) enables robust 6 V drive compatibility while maintaining noise immunity.
This MOSFET supports unclamped inductive switching (UIS) up to 11.5 mJ and avalanche-rated pulsed drain current (IAS = 15 A), with thermal design anchored by junction-to-case resistance of 1.6 °C/W and 100% Rg screening for gate-drive consistency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports primary-side switching in 48 V telecom and 100 V industrial DC bus applications without derating. |
| ID (VGS = 10 V) | 46 A - Enables high-current synchronous rectification in 200–500 W boost converters with minimal conduction loss. |
| RDS(ON) (VGS = 10 V) | < 16.5 mΩ - Reduces I²R losses below 35 W at 46 A, easing thermal management on DFN5x6 PCB land pattern. |
| Qg (10 V) | 16–23 nC - Allows efficient gate driving with standard 1–2 A peak drivers, minimizing switching transition time and EMI. |
| tr/tf | 2.5 ns / 3 ns - Enables operation beyond 1 MHz in resonant topologies where fast edge control suppresses ringing. |
| EAS | 11.5 mJ - Guarantees single-pulse avalanche survivability during transient overloads in non-isolated DC/DC stages. |
| RθJC | 1.6 °C/W - Permits >30 W continuous power dissipation with modest heatsinking, validated via JEDEC-standard mounting. |
Pinout & Package
Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height), exposed drain pad on bottom side for optimal thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D) | Internally paralleled drain terminals - connected to exposed thermal pad; primary current path and heat sink interface. |
| 5 | Source (S) | Main source connection; used for current sensing and feedback in synchronous rectifier configurations. |
| 6 | Gate (G) | Control input; low gate resistance (Rg = 0.6–1.9 Ω) ensures stable turn-on/turn-off with minimal overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Delivers lowest RDS(ON) × Qg figure-of-merit (FoM) in 100 V DFN class, enabling >97% efficiency in 500 kHz boost stages. |
| 100% UIS tested | Each unit validated for unclamped inductive switching energy ≥11.5 mJ - eliminates field failure risk in hard-switched PFC and flyback designs. |
| Low reverse recovery charge (Qrr) | 132 nC at IF = 20 A - minimizes cross-conduction loss and diode-induced voltage spikes in synchronous rectification. |
| Exposed drain thermal pad | Enables direct thermal coupling to inner-layer copper pours; achieves RθJA = 14 °C/W on 1 in² 2 oz FR-4 board. |
| 100% Rg tested | Guarantees gate resistance between 0.6–1.9 Ω - ensures consistent gate-drive timing and prevents shoot-through in half-bridge layouts. |
Applications
| Telecom AC-DC Rectification | Industrial Boost Converter |
|---|---|
Use Scenario: High-density 48 V input AC-DC front-end supplying server PSUs with active clamp forward topology. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diodes in secondary-side output stage. Use Value: Reduces conduction loss by 40% vs. 40 V Schottky, enabling 50°C lower MOSFET case temperature at 40 A load. |
Use Scenario: 3 kW industrial DC-DC converter stepping 200 V bus to 400 V for motor drives. IC Role / Device Role / Timing Role: High-side boost switch operating at 200 kHz with ZVS-assisted soft switching. Use Value: Low Coss (127 pF) and Qgd (3 nC) enable reliable zero-voltage turn-on, cutting switching loss by 35%. |
| LED Backlight Driver | Consumer USB-PD Power Adapter |
Use Scenario: 120 W LCD TV backlight using multi-phase boost + buck-boost LED driver. IC Role / Device Role / Timing Role: Primary-side boost switch in interleaved two-phase topology. Use Value: 46 A rating supports 2×20 A phase current sharing; DFN5x6 footprint allows compact layout with <12 mm² area per phase. |
Use Scenario: 65 W GaN-based USB-PD adapter with synchronous rectification on secondary side. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier controlled by QR flyback controller. Use Value: Fast trr (30 ns) and low VSD (0.73 V) eliminate body-diode conduction loss, improving full-load efficiency by 1.2%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-Channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N10N5 | Same VDS (100 V), higher RDS(ON) (4.0 mΩ @ 10 V), larger TO-220 package, no DFN option. | Better suited for through-hole prototyping or legacy board upgrades requiring leaded packages. | Select when mechanical mounting constraints require leaded package or when higher pulse current margin (>100 A) is needed. |
| Vishay SiR626DP | DFN5x6 package, slightly higher RDS(ON) (18.5 mΩ @ 10 V), lower Qg (18 nC), no 100% UIS test data published. | Acceptable for non-critical consumer boost stages but lacks documented avalanche ruggedness for industrial use. | Prefer for cost-sensitive consumer designs where full UIS validation is not mandated by safety standards. |
Compared with IPP040N10N5 and SiR626DP, the AON6298 uniquely combines DFN5x6 form factor, sub-17 mΩ RDS(ON), and guaranteed UIS performance - making it the only choice for space-constrained, high-reliability telecom and industrial SMPS requiring both thermal density and transient robustness.
Availability
AON6298 is available at Aetrix Electronics and suitable for telecom AC-DC rectification, industrial boost converters, and LED backlighting systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AON6298 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for power conversion and management.
The AON6298 belongs to AOS's TrenchFET® Gen V family, engineered specifically for high-frequency, high-efficiency DC/DC conversion in telecom infrastructure, industrial power supplies, and solid-state lighting.
FAQ
What is the maximum continuous drain current rating for the AON6298 at 100°C case temperature?
The AON6298 supports 30 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN5x6 package under real-world heatsink conditions and ensures safe operation without exceeding the 150°C maximum junction temperature. The AON6298 maintains this rating with verified RθJC = 1.6 °C/W performance across production lots.
Does the AON6298 support gate drive at 6 V, and what is its RDS(ON) under that condition?
Yes, the AON6298 is fully characterized for 6 V gate drive, with RDS(ON) ≤ 21 mΩ at VGS = 6 V and ID = 20 A. This enables compatibility with logic-level controllers and microcontrollers lacking dedicated 10 V gate drivers, while maintaining low conduction loss in cost-sensitive designs. The AON6298 gate threshold voltage range (2.4–3.4 V) ensures reliable turn-on even with supply tolerance.
Is the AON6298 suitable for synchronous rectification in QR flyback converters?
Yes, the AON6298 is widely deployed in QR flyback synchronous rectification due to its fast body-diode recovery (trr = 30 ns, Qrr = 132 nC) and low forward voltage (VSD = 0.73 V). These parameters minimize reverse recovery loss and conduction loss during the dead-time interval, directly improving light-load and full-load efficiency. The AON6298's low Qgd also reduces risk of false triggering in high-dV/dt environments typical of QR operation.
What thermal performance can be expected from the AON6298 on a standard 1 in² 2 oz FR-4 PCB?
On a 1 in² 2 oz FR-4 board in still air, the AON6298 achieves RθJA = 55 °C/W, allowing 4.7 W continuous power dissipation at TA = 70°C. With proper copper pour under the exposed drain pad, junction-to-ambient rise remains within specification up to 78 W at TC = 25°C. The AON6298's thermal data is measured per JEDEC JESD51-2 and JESD51-14 standards, ensuring reproducible results across manufacturing sites.
How does the 100% Rg testing benefit circuit reliability for the AON6298?
The 100% Rg screening ensures every AON6298 unit has gate resistance between 0.6 Ω and 1.9 Ω, eliminating outliers that could cause inconsistent switching speed, gate oscillation, or shoot-through in bridge configurations. This tight Rg distribution improves timing predictability in high-frequency half-bridge and LLC resonant converters, directly enhancing system reliability. The AON6298's Rg test is performed inline during final test, not sampled.
AON6298 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.5A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 16.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1307 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.4W (Ta), 78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AON6298 FAQ
1.How can I place an order for AON6298 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON6298 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON6298 reliable?
The price and inventory of AON6298 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6298 is usually 5 days.
3.What payment methods are accepted for AON6298?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6298 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON6298?
AON6298 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON6298 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON6298?
For technical support, including AON6298 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6298 requirements.
6.How does Aetrix verify that AON6298 is sourced from the original manufacturer or authorized distributors?
All AON6298 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6298 meets industry standards.
7.What is the process for return or replacement of AON6298?
All AON6298 units undergo pre-shipment inspection (PSI). If there is an issue with AON6298, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON6298 part is unused and in its original packaging.
Return procedure for AON6298:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AON6298 Tags
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AO4419
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