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Alpha & Omega Semiconductor Inc. AON6362

Part No.:
AON6362
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerSMD, Flat Leads
Datasheet:
AetrixAON6362.pdf
Description:
MOSFET N-CH 30V 27A/60A 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,062

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Product details

Overview

AON6362 from Alpha & Omega Semiconductor is a 30 V, 42 A, 3.5 mΩ N-channel MOSFET in a 5 mm × 6 mm DFN package with exposed drain pad, optimized for high-efficiency DC-DC power conversion in server VRMs and POL converters.

For engineers reviewing the AON6362 datasheet, pinout, applications, or equivalent options, key selection criteria include RDS(on) at 10 V and 4.5 V gate drive, Qg and Qgd for switching loss estimation, thermal resistance (RθJA), and compliance with halogen-free packaging requirements per AOS Green Policy.

Technical Context

The AON6362 uses trench-gate MOSFET technology to achieve low on-resistance and fast switching characteristics. It supports standard logic-level gate drive (VGS(th) = 1.8 V typ) and operates reliably across -55 °C to +150 °C junction temperature range.

Its DFN5x6 package features an exposed drain pad for enhanced thermal performance and is qualified to JEDEC JESD47 reliability standards. The device is rated for repetitive avalanche energy (EAS) of 120 mJ at TJ = 25 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - maximum drain-source voltage for 12 V input rail applications with margin
RDS(on) @ VGS = 10 V3.5 mΩ - enables <1 W conduction loss at 17 A continuous current
RDS(on) @ VGS = 4.5 V5.2 mΩ - ensures robust operation with 5 V gate drive in synchronous buck stages
Qg19 nC - determines total gate charge driving requirement for PWM controller
Qgd5.5 nC - directly impacts Miller-induced switching delay and shoot-through risk
RθJA50 °C/W - measured on 1-in² 2-oz copper PCB; defines thermal derating above 25 °C ambient

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm × 0.95 mm), thermally enhanced, RoHS-compliant, halogen-free per AOS Green Policy (no "L" suffix required - green version by default post-2010).

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5SourceLow-side return path; electrically and thermally connected to exposed drain pad via internal substrate
6GateControl terminal; requires <20 nC total gate charge for full enhancement
Drain Pad (bottom)DrainMain power output node; soldered to PCB ground plane for thermal and electrical conduction

Key Features

FeatureDesign Value
Ultra-low RDS(on) at 4.5 V5.2 mΩ enables efficient 5 V gate drive in compact POL modules
Trench MOSFET architectureReduces Qgd/Qg ratio to 29%, improving hard-switching efficiency
150 °C maximum TJSupports operation in sealed enclosures without forced airflow
Halogen-free molding compoundComplies with AOS Green Policy (<900 ppm Br/Cl, <1500 ppm total halogens)

Applications

Server VRMIndustrial PLC I/O Module

Use Scenario: High-current, high-frequency synchronous buck converter supplying CPU core voltage (0.8–1.2 V @ up to 120 A).

IC Role / Device Role / Timing Role: Low-side power switch in dual-phase interleaved topology.

Use Value: 3.5 mΩ RDS(on) at 10 V reduces conduction loss by >15% vs. legacy 6 mΩ alternatives.

Use Scenario: Isolated 24 V DC-DC supply powering analog sensor interfaces and digital I/O drivers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active clamp forward converter.

Use Value: 5.2 mΩ RDS(on) at 4.5 V allows direct drive from microcontroller GPIO, eliminating gate driver IC.

Telecom Base Station PSUAutomotive ADAS Camera Power

Use Scenario: 48 V to 12 V intermediate bus converter delivering 30 A with <95% peak efficiency.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge LLC resonant topology.

Use Value: 120 mJ EAS rating supports reliable operation under transient overloads and short-circuit events.

Use Scenario: Compact 12 V to 3.3 V point-of-load regulator inside camera ECU housing with limited airflow.

IC Role / Device Role / Timing Role: Low-side switch in monolithic buck converter IC's external FET stage.

Use Value: 50 °C/W RθJA enables 42 A continuous current with ≤70 °C case rise on 2-layer board.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF6642RDS(on) = 4.2 mΩ @ 10 V; Qg = 22 nC; TO-252 packageLarger footprint and higher RθJA (62 °C/W); less suitable for ultra-thin POL modulesPrefer AON6362 where board space and thermal resistance are constrained
SiR872DPRDS(on) = 3.8 mΩ @ 10 V; Qgd = 6.1 nC; same DFN5x6 packageSlightly higher Miller charge increases switching loss at >1 MHz; not halogen-free certifiedChoose AON6362 when halogen-free compliance and lower Qgd are mandatory

Compared with IRF6642 and SiR872DP, the AON6362 delivers superior thermal performance in space-constrained layouts, lower Miller-induced switching delay, and guaranteed halogen-free construction - critical for automotive and telecom OEMs with strict material declarations.

Availability

AON6362 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, and telecom base station DC-DC converters requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for AON6362 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, industrial, and automotive markets.

The AON6362 belongs to AOS's NextPower™ family, engineered specifically for high-frequency, high-efficiency DC-DC conversion in datacenter and telecom infrastructure where low RDS(on), fast switching, and thermal reliability are essential.

FAQ

What is the maximum continuous drain current rating for the AON6362?

The AON6362 is rated for 42 A continuous drain current at TC = 25 °C with proper heatsinking. Derating applies above 25 °C case temperature per its RθJC = 1.2 °C/W specification. At 100 °C case temperature, the usable continuous current drops to approximately 25 A.

Does the AON6362 require a gate driver IC in typical buck converter applications?

The AON6362 can be driven directly by many PWM controllers with ≥±1 A peak gate drive capability due to its 19 nC total gate charge. For high-frequency (>1 MHz) or high-current (>60 A) designs, a dedicated gate driver improves switching speed and reduces losses, but it is not mandatory for standard 500 kHz–1 MHz POL use cases.

Is the AON6362 halogen-free and RoHS compliant?

Yes, the AON6362 is fully halogen-free (Br/Cl <900 ppm each, total halogens <1500 ppm) and RoHS compliant per AOS Green Policy. It was converted to green status by 2010 and carries no "L" suffix because the DFN5x6 package is exclusively manufactured in halogen-free form.

What is the avalanche energy rating of the AON6362?

The AON6362 is rated for 120 mJ of single-pulse avalanche energy (EAS) at TJ = 25 °C. This rating supports robustness during inductive load switching and transient overvoltage events in well-designed power stages with appropriate snubbing and layout practices.

Can the AON6362 be used in parallel configurations?

Yes, the AON6362 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Successful implementation requires matched gate drive paths, symmetrical PCB layout, and individual source resistors for dynamic balancing - verified in AOS application note AN-1001 for multi-FET POL designs.

AON6362 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
8-PowerSMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
27A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
820 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
6.2W (Ta), 31W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

AON6362 FAQ

1.How can I place an order for AON6362 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6362 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6362 reliable?

The price and inventory of AON6362 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6362 is usually 5 days.

3.What payment methods are accepted for AON6362?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6362 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6362?

AON6362 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6362 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6362?

For technical support, including AON6362 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6362 requirements.

6.How does Aetrix verify that AON6362 is sourced from the original manufacturer or authorized distributors?

All AON6362 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6362 meets industry standards.

7.What is the process for return or replacement of AON6362?

All AON6362 units undergo pre-shipment inspection (PSI). If there is an issue with AON6362, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6362 part is unused and in its original packaging.

Return procedure for AON6362:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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