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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6368

Name: AON6368
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6368
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON6368

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AON6368.pdf

Description:: MOSFET N-CH 30V 25A/52A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON6368 from Alpha & Omega Semiconductor is a 30V, 52A N-channel Trench Power αMOS MOSFET in DFN5x6 package, featuring <6.1mΩ R_DS(ON) at V_GS=10V and <9.5mΩ at V_GS=4.5V, with 100% UIS and R_g tested, optimized for high-efficiency DC/DC converters in computing and telecom power supplies.

For engineers reviewing the AON6368 datasheet, pinout, applications, or equivalent options, key selection criteria include low gate charge (Q_g=13nC @10V), high current capability (I_D=52A), thermal performance (R_θJC=4.6°C/W), and body-diode robustness (Q_rr=19nC, t_rr=11ns) in compact DFN5x6 packaging.

Technical Context

The AON6368 employs Trench Power αMOS technology to achieve low R_DS(ON) and low gate charge simultaneously, enabling high-frequency switching in synchronous buck converters. Its 100% unclamped inductive switching (UIS) testing ensures ruggedness under transient overcurrent conditions.

Thermal design is supported by a low junction-to-case resistance of 4.6°C/W and validated steady-state power dissipation up to 36W at T_C=25°C. The device operates across –55°C to 150°C junction temperature range and supports gate drive voltages from 4.5V to 10V for reliable enhancement-mode turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum drain-source blocking voltage for 12V/24V input rail applications
I_D (V_GS=10V)	52A - Continuous drain current rating at full gate drive, suitable for high-current POL stages
R_DS(ON) (V_GS=10V)	<6.1mΩ - Enables <0.5W conduction loss at 20A, critical for >95% efficiency targets
R_DS(ON) (V_GS=4.5V)	<9.5mΩ - Ensures stable operation with 5V logic-level gate drivers in space-constrained designs
Q_g (10V)	13nC - Low total gate charge reduces driver power loss and enables >1MHz switching
Q_rr	19nC - Minimizes reverse recovery loss in synchronous rectification and half-bridge topologies
R_θJC	4.6°C/W - Supports direct heatsinking to PCB copper or external thermal pad for thermal management

Pinout & Package

Package: DFN5x6 (5.0mm × 6.0mm, 1.0mm height, exposed drain pad on bottom). Thermal pad must be soldered to PCB ground plane for optimal R_θJC.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All eight pins connect to internal drain metallization and thermal pad - primary current path and heat sink interface
Pin 1 (marked)	Gate (G)	Standard gate input; requires low-impedance drive due to R_g=0.6–1.8Ω and Q_g=13nC
Pin 3	Source (S)	Source reference node; connects to power ground or low-side switch node in half-bridge configurations

Key Features

Feature	Design Value
Trench Power αMOS Technology	Enables simultaneous optimization of R_DS(ON), Q_g, and C_iss for high-frequency, high-efficiency SMPS
100% UIS Tested	Guarantees survivability under unclamped inductive load transients without derating
100% R_g Tested	Ensures consistent gate drive timing and switching behavior across production lots
RoHS & Halogen-Free	Complies with environmental regulations for consumer and industrial end equipment
Low Q_gd/Q_g Ratio	Q_gd=2.4nC / Q_g=13nC ≈ 18% - improves Miller immunity and hard-switching robustness

Applications

Server VRMs	Telecom DC/DC Modules
Use Scenario: High-density, multi-phase buck converters delivering 12V→0.8V at >200A per CPU socket in cloud data centers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500kHz–1MHz with 4.5V gate drive. Use Value: <6.1mΩ R_DS(ON) at 10V and <9.5mΩ at 4.5V minimizes conduction loss; low Q_g enables efficient high-frequency operation.	Use Scenario: Isolated forward or active-clamp forward converters in 48V telecom power systems with tight thermal constraints. IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in high-reliability 200–500W modules. Use Value: 100% UIS-tested ruggedness withstands transformer leakage energy; R_θJC=4.6°C/W allows direct thermal coupling to chassis.
Industrial Motor Drives	USB-C PD Power Stages
Use Scenario: Half-bridge gate drivers controlling BLDC motors in HVAC blowers and pumps requiring >30A peak current. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, driven by isolated gate driver with 5V logic interface. Use Value: Body diode t_rr=11ns and Q_rr=19nC reduce shoot-through risk and commutation loss during PWM dead-time.	Use Scenario: 100W USB-C Power Delivery adapters using synchronous buck-boost topology with 5–20V input and 5–20V output. IC Role / Device Role / Timing Role: High-efficiency switching FET in bidirectional power stage operating at 300–600kHz. Use Value: Low C_iss=820pF and Cr_ss=40pF minimize capacitive switching loss; DFN5x6 footprint saves board area vs. SO-8.

Server VRMs

Telecom DC/DC Modules

Use Scenario: High-density, multi-phase buck converters delivering 12V→0.8V at >200A per CPU socket in cloud data centers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500kHz–1MHz with 4.5V gate drive.

Use Value: <6.1mΩ R_DS(ON) at 10V and <9.5mΩ at 4.5V minimizes conduction loss; low Q_g enables efficient high-frequency operation.

Use Scenario: Isolated forward or active-clamp forward converters in 48V telecom power systems with tight thermal constraints.

IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in high-reliability 200–500W modules.

Use Value: 100% UIS-tested ruggedness withstands transformer leakage energy; R_θJC=4.6°C/W allows direct thermal coupling to chassis.

Industrial Motor Drives

USB-C PD Power Stages

Use Scenario: Half-bridge gate drivers controlling BLDC motors in HVAC blowers and pumps requiring >30A peak current.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, driven by isolated gate driver with 5V logic interface.

Use Value: Body diode t_rr=11ns and Q_rr=19nC reduce shoot-through risk and commutation loss during PWM dead-time.

Use Scenario: 100W USB-C Power Delivery adapters using synchronous buck-boost topology with 5–20V input and 5–20V output.

IC Role / Device Role / Timing Role: High-efficiency switching FET in bidirectional power stage operating at 300–600kHz.

Use Value: Low C_iss=820pF and Cr_ss=40pF minimize capacitive switching loss; DFN5x6 footprint saves board area vs. SO-8.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(ON)=1.4mΩ @4.5V (lower), Q_g=22nC (higher), TO-263-7 package	Larger footprint, higher thermal mass; better for lower-frequency, higher-current designs	Preferred when ultra-low R_DS(ON) at 4.5V outweighs gate drive loss and layout area
Vishay SiR626DP	R_DS(ON)=6.7mΩ @4.5V (slightly higher), Q_g=11.5nC (lower), same DFN5x6 package	Identical footprint and pinout; marginally higher conduction loss but faster switching	Drop-in replacement where minimal layout change is required and gate drive efficiency is prioritized

Compared with AON6368, BSC014N04LS6 offers superior 4.5V R_DS(ON) but demands more gate drive power and occupies more PCB area, while SiR626DP provides nearly identical mechanical fit with slightly relaxed conduction specs but improved switching speed - making it ideal for fast-turnaround redesigns.

Availability

AON6368 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC modules, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for AON6368 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON6368 belongs to AOS's Trench Power αMOS family, engineered specifically for high-efficiency, high-current DC/DC conversion in space- and thermally-constrained applications such as data center power supplies and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for AON6368 at 100°C case temperature?

The AON6368 supports 27A continuous drain current at T_C=100°C, as specified in its Absolute Maximum Ratings table. This de-rating reflects thermal limits imposed by its R_θJC=4.6°C/W and maximum junction temperature of 150°C. Designers must verify actual PCB thermal design meets this condition using measured case temperature, not ambient.

Does AON6368 support 5V gate drive in logic-level applications?

Yes, the AON6368 is fully characterized at V_GS=4.5V, with R_DS(ON) <9.5mΩ and guaranteed gate threshold voltage (V_GS(th)) between 1.4V and 2.2V. This makes it compatible with standard 5V logic outputs and microcontroller GPIOs without level-shifting, provided gate drive strength meets Q_g=6.1nC (4.5V) requirements.

Is AON6368 suitable for synchronous rectification in isolated flyback converters?

Yes, the AON6368 is well-suited for secondary-side synchronous rectification in flyback converters. Its low R_DS(ON) at 4.5V, fast body diode recovery (t_rr=11ns, Q_rr=19nC), and 100% UIS testing ensure reliable operation during zero-voltage switching transitions and fault transients common in isolated topologies.

What is the recommended PCB layout practice for thermal management of AON6368?

For optimal thermal performance, the AON6368's exposed drain pad must be soldered to a minimum 1in² copper area on the PCB's inner or outer layer, with ≥4 thermal vias (0.3mm diameter) connecting to internal ground planes. This achieves the published R_θJC=4.6°C/W; insufficient copper or via count will degrade power handling and increase junction temperature.

How does the gate resistance specification of AON6368 impact EMI and switching behavior?

The AON6368 has a typical gate resistance (R_g) of 1.2Ω, measured internally. This value influences gate ring oscillation damping and dV/dt control: higher external series R_g slows turn-on/turn-off edges to reduce EMI but increases switching loss, while lower values improve efficiency at the cost of potential gate ringing. Layout parasitics must be minimized to avoid unintended R_g increase.

AON6368 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 52A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 27W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6368 FAQ

1.How can I place an order for AON6368 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6368 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6368 reliable?

The price and inventory of AON6368 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6368 is usually 5 days.

3.What payment methods are accepted for AON6368?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6368 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6368?

AON6368 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6368 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6368?

For technical support, including AON6368 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6368 requirements.

6.How does Aetrix verify that AON6368 is sourced from the original manufacturer or authorized distributors?

All AON6368 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6368 meets industry standards.

7.What is the process for return or replacement of AON6368?

All AON6368 units undergo pre-shipment inspection (PSI). If there is an issue with AON6368, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6368 part is unused and in its original packaging.

Return procedure for AON6368:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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