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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6416

Name: AON6416
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6416
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON6416

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AON6416.pdf

Description:: MOSFET N-CH 30V 14A/22A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON6416 from Alpha & Omega Semiconductor is a 30V N-Channel MOSFET in DFN5x6 package, fabricated with SDMOSTM trench technology. It delivers R_DS(ON) < 8 mΩ at V_GS = 10 V and < 14 mΩ at V_GS = 4.5 V, supports 22 A continuous drain current (T_C = 25°C), and features 100% UIS and R_g tested reliability for high-efficiency PWM and load switching.

For engineers reviewing the AON6416 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g = 23 nC typ at 10 V), fast switching (t_on = 17 ns, t_off = 27 ns), robust body diode (Q_rr = 17.6 nC, t_rr = 9.8 ns), and thermal performance (R_θJC = 3.4°C/W) in compact surface-mount packaging.

Technical Context

The AON6416 employs SDMOSTM trench process to optimize conduction loss and switching speed trade-offs. Its gate threshold voltage (1.2–2.4 V) enables compatibility with 3.3 V and 5 V logic-level drive, while its low R_g (0.55–1.7 Ω) and controlled Q_gd/Q_gs ratio (6/3 nC typ) support stable hard-switching operation without excessive ringing.

Designed for unclamped inductive switching (UIS) stress, the device sustains 11 mJ repetitive avalanche energy (L = 0.1 mH) and exhibits soft reverse recovery (S ≈ 1.5–2.5) across temperature and di/dt conditions. Its SOA is limited by bond-wire current rating (I_DM = 45 A pulsed) and junction-to-case thermal resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V rail and automotive battery-supplied systems.
R_DS(ON) @ V_GS=10 V	< 8 mΩ - Enables <1.8 W conduction loss at 22 A, suitable for high-current DC-DC output stages.
R_DS(ON) @ V_GS=4.5 V	< 14 mΩ - Ensures reliable turn-on with standard 5 V microcontroller GPIO or gate drivers.
Q_g @ 10 V	23 nC typ - Reduces gate drive power and enables >1 MHz switching in synchronous buck converters.
t_rr / Q_rr	9.8 ns / 17.6 nC - Minimizes commutation loss and EMI in half-bridge and H-bridge topologies.
R_θJC	3.4°C/W - Allows direct heatsinking via exposed drain pad for >30 W continuous dissipation with external copper.
UIS Energy	11 mJ - Withstands transient inductive kickback in motor control and solenoid drive without derating.

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm × 0.95 mm), thermally enhanced with exposed drain pad on bottom side. Pin 1 marked by notch or dot; pins 1–4 on one side, 5–8 on opposite side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed metal pad - primary current path and thermal conduction path to PCB.
5	Gate (G)	High-impedance control input; requires low-inductance routing to minimize switching overshoot.
6	Source (S)	Reference node for gate drive; must be low-impedance return path to minimize V_GS error during switching.

Key Features

Feature	Design Value
SDMOSTM trench process	Combines low R_DS(ON) and low Q_g for optimal figure-of-merit (R_DS(ON) × Q_g = 0.18 Ω·nC), improving efficiency in 300 kHz–2 MHz converters.
100% UIS tested	Guarantees avalanche ruggedness per JEDEC JESD22-A115, eliminating need for external snubbers in inductive load switching.
100% R_g tested	Ensures consistent gate drive timing and predictable switching behavior across production lots.
Low Q_gd/Q_gs ratio	6 nC / 3 nC typ - Reduces Miller effect, enabling stable operation with moderate gate resistance (3–10 Ω) and minimal shoot-through risk.
Soft-recovery body diode	Reverse recovery softness factor S ≈ 2.0 (25°C) - Suppresses voltage spikes and EMI during freewheeling in synchronous rectification.

Applications

DC-DC Synchronous Buck Converter	Automotive Body Control Module (BCM)
Use Scenario: High-efficiency 12 V input to 3.3 V/5 V output conversion for infotainment and ADAS subsystems. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal margin. Use Value: Achieves >95% efficiency at 15 A load due to R_DS(ON) < 14 mΩ at 4.5 V drive and low Q_rr, reducing heatsink requirements.	Use Scenario: Load switching for LED headlamps, HVAC actuators, and window lift motors in 12 V vehicle architecture. IC Role / Device Role: N-channel high-side switch with charge pump or low-side driver, leveraging robust UIS rating for inductive kick suppression. Use Value: Withstands 11 mJ repetitive avalanche energy and operates reliably at T_J up to 150°C, meeting AEC-Q101 stress test requirements.
Industrial Motor Drive Inverter	Server VRM High-Current Phase Leg
Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for pumps, fans, and conveyors. IC Role / Device Role: Low-side switch in three-phase inverter, paired with complementary high-side MOSFET. Use Value: Fast t_rr (9.8 ns) and soft recovery minimize cross-conduction loss and dv/dt-induced gate noise in 20–50 kHz PWM.	Use Scenario: Power stage in multi-phase CPU/GPU VRMs delivering up to 100 A per phase at ≤1.2 V. IC Role / Device Role: Bottom-FET in synchronous buck cell, optimized for high-frequency (500 kHz–1 MHz), high-current operation. Use Value: Low R_DS(ON) < 8 mΩ and R_θJC = 3.4°C/W enable >30 W dissipation with direct thermal vias to inner ground planes.

DC-DC Synchronous Buck Converter

Automotive Body Control Module (BCM)

Use Scenario: High-efficiency 12 V input to 3.3 V/5 V output conversion for infotainment and ADAS subsystems.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal margin.

Use Value: Achieves >95% efficiency at 15 A load due to R_DS(ON) < 14 mΩ at 4.5 V drive and low Q_rr, reducing heatsink requirements.

Use Scenario: Load switching for LED headlamps, HVAC actuators, and window lift motors in 12 V vehicle architecture.

IC Role / Device Role: N-channel high-side switch with charge pump or low-side driver, leveraging robust UIS rating for inductive kick suppression.

Use Value: Withstands 11 mJ repetitive avalanche energy and operates reliably at T_J up to 150°C, meeting AEC-Q101 stress test requirements.

Industrial Motor Drive Inverter

Server VRM High-Current Phase Leg

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for pumps, fans, and conveyors.

IC Role / Device Role: Low-side switch in three-phase inverter, paired with complementary high-side MOSFET.

Use Value: Fast t_rr (9.8 ns) and soft recovery minimize cross-conduction loss and dv/dt-induced gate noise in 20–50 kHz PWM.

Use Scenario: Power stage in multi-phase CPU/GPU VRMs delivering up to 100 A per phase at ≤1.2 V.

IC Role / Device Role: Bottom-FET in synchronous buck cell, optimized for high-frequency (500 kHz–1 MHz), high-current operation.

Use Value: Low R_DS(ON) < 8 mΩ and R_θJC = 3.4°C/W enable >30 W dissipation with direct thermal vias to inner ground planes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(ON) = 1.4 mΩ @ 10 V (lower), but Q_g = 32 nC (higher); DSO-8 package vs. DFN5x6.	Higher efficiency at high current, but slower switching and larger footprint; less suitable for space-constrained VRMs.	Prefer AON6416 when board area and switching frequency >500 kHz are critical; choose BSC014N04LS6 only if conduction loss dominates system loss budget.
Vishay SiR872DP	R_DS(ON) = 7.5 mΩ @ 10 V (comparable), Q_g = 21 nC (slightly lower), but no 100% UIS testing specified.	Lacks guaranteed avalanche ruggedness - requires external clamping for inductive loads unless derated.	Select AON6416 where unclamped inductive switching is routine (e.g., motor drives); use SiR872DP only in purely resistive or lightly inductive loads with snubber protection.

Compared with BSC014N04LS6 and SiR872DP, the AON6416 offers best-in-class balance of low Q_g, verified UIS capability, and compact DFN5x6 footprint - making it optimal for high-frequency, space-constrained, and ruggedized applications where both switching loss and reliability are design-critical.

Availability

AON6416 is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AON6416 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON6416 belongs to AOS's SDMOSTM trench-based N-channel MOSFET product line, engineered for high-efficiency, high-frequency power conversion in space-constrained and thermally demanding applications.

FAQ

What is the maximum continuous drain current rating for the AON6416?

The AON6416 supports 22 A continuous drain current at T_C = 25°C, derating to 17 A at T_C = 70°C and 14 A at T_C = 100°C. This rating assumes proper PCB copper area and thermal vias under the exposed drain pad to maintain junction temperature ≤150°C. The AON6416's R_θJC = 3.4°C/W enables this performance in compact layouts.

Does the AON6416 support 3.3 V logic-level gate drive?

The AON6416 has a gate threshold voltage range of 1.2–2.4 V, enabling turn-on with 3.3 V logic, but full enhancement requires V_GS ≥ 4.5 V to achieve R_DS(ON) < 14 mΩ. For reliable 3.3 V drive, pairing with a gate driver (e.g., AOS AOZ5311) is recommended. The AON6416's low Q_g (23 nC) minimizes driver loading.

Is the AON6416 qualified for automotive applications?

The AON6416 is not AEC-Q101 qualified, though its absolute maximum ratings (T_J = –55 to 150°C, 100% UIS tested) align with many automotive subsystem requirements. For production automotive use, AOS offers AEC-Q101 variants like AON6414Q. The AON6416 remains suitable for non-safety-critical 12 V body electronics where qualification is not mandated.

What is the thermal resistance from junction to ambient (R_θJA) for the AON6416?

The AON6416 has R_θJA = 53°C/W when mounted on a 1 in² FR-4 board with 2 oz. copper in still air. This value drops significantly with added copper area and thermal vias - e.g., to ~21°C/W with 2 in² copper and 6 thermal vias. The AON6416's R_θJC = 3.4°C/W allows direct heatsinking for higher-power operation.

How does the body diode performance of the AON6416 compare to standard MOSFETs?

The AON6416 features a soft-recovery body diode with Q_rr = 17.6 nC and t_rr = 9.8 ns at T_J = 125°C, and softness factor S ≈ 2.0. This reduces voltage overshoot and EMI during freewheeling versus conventional MOSFETs. The AON6416's diode forward voltage is 0.7–1.0 V at I_S = 1 A, supporting efficient synchronous rectification.

AON6416 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: SDMOS™

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1430 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6416 FAQ

1.How can I place an order for AON6416 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6416 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6416 reliable?

The price and inventory of AON6416 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6416 is usually 5 days.

3.What payment methods are accepted for AON6416?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6416 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6416?

AON6416 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6416 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6416?

For technical support, including AON6416 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6416 requirements.

6.How does Aetrix verify that AON6416 is sourced from the original manufacturer or authorized distributors?

All AON6416 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6416 meets industry standards.

7.What is the process for return or replacement of AON6416?

All AON6416 units undergo pre-shipment inspection (PSI). If there is an issue with AON6416, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6416 part is unused and in its original packaging.

Return procedure for AON6416:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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