Alpha & Omega Semiconductor Inc. AON6426

Overview

AON6426 from Alpha & Omega Semiconductor is a 30V N-Channel enhancement-mode trench MOSFET optimized for high-current load switching and battery protection circuits. It delivers R_DS(ON) < 5.5 mΩ at V_GS = 10 V, 65 A continuous drain current at T_C = 25°C, and 100% UIS-tested ruggedness - enabling robust operation in portable power banks and USB-C PD sink applications.

For engineers reviewing the AON6426 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN5x6 package thermal performance (R_θJC = 3°C/W), low gate charge (Q_g(10V) = 45 nC), and guaranteed avalanche energy rating (E_AR = 100 mJ).

Technical Context

The AON6426 employs advanced trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching speed and tight threshold voltage distribution (V_GS(th) = 1.3–2.5 V). Its 100% R_g tested gate resistance (0.7–2.1 Ω) ensures consistent turn-on behavior across production lots.

This MOSFET supports unclamped inductive switching with E_AR = 100 mJ at L = 0.1 mH and operates reliably over –55°C to +150°C junction temperature range. The integrated body diode exhibits t_rr = 14–17 ns and Q_rr = 40 nC under IF = 20 A, dI/dt = 500 A/μs conditions.

Key Specifications

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height, exposed thermal pad). Bottom-side thermal pad improves heat transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Compared with BSC014N04LS6 and SiR626DP, the AON6426 provides the best balance of low R_DS(ON), moderate gate charge, guaranteed UIS performance, and verified DFN5x6 pin compatibility - making it ideal for battery protection and USB-C PD where reliability and layout reuse matter.

Availability

AON6426 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery sinks, and hot-swap controller output stages requiring stable component supply and long-term industrial availability.

Supply support for AON6426 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AON6426 belongs to AOS's advanced trench MOSFET product line, engineered specifically for high-current, low-voltage switching applications demanding low R_DS(ON), fast switching, and rugged transient handling.

FAQ

What is the maximum continuous drain current rating for the AON6426 at 100°C case temperature?

The AON6426 supports 43 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limits imposed by the DFN5x6 package's R_θJC = 3°C/W and maximum junction temperature of 150°C. Designers must ensure adequate PCB copper area and airflow to sustain this current in real-world operation. The AON6426 maintains R_DS(ON) < 7.5 mΩ even at elevated temperatures, preserving efficiency under thermal stress.

Does the AON6426 have a specified avalanche energy rating, and how is it tested?

Yes, the AON6426 is 100% tested for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy rating of 100 mJ at L = 0.1 mH. This test verifies ruggedness against inductive kickback during fault conditions such as short-circuit turn-off. The AON6426 datasheet confirms this rating is measured per JEDEC standard JESD24-1, and each unit undergoes production screening - a critical assurance for AON6426 use in motor drives and DC-DC converters where inductive loads are present.

Can the AON6426 be driven directly by a 3.3 V microcontroller GPIO without a level shifter?

The AON6426 has a gate threshold voltage V_GS(th) of 1.3–2.5 V and achieves R_DS(ON) < 7.5 mΩ at V_GS = 4.5 V, making it compatible with 3.3 V logic-level drive. However, full enhancement and minimal conduction loss require V_GS ≥ 4.5 V. For reliable 65 A operation, a dedicated gate driver or level-shifting buffer is recommended. The AON6426's low Q_g(4.5V) = 18 nC eases drive requirements, but direct 3.3 V MCU drive is only suitable for low-duty-cycle or partial-load applications.

What is the thermal resistance from junction to ambient (R_θJA) for the AON6426 under standard test conditions?

The AON6426 has R_θJA = 64°C/W when mounted on a 1 in² FR-4 board with 2 oz. copper in still air (per JEDEC JESD51-2). This value assumes minimal PCB copper and no heatsink - actual performance improves significantly with enhanced thermal design. The AON6426's exposed thermal pad allows R_θJA reduction to ~30°C/W with 20 cm² of 2 oz. copper, enabling higher continuous current. R_θJC = 3°C/W is more relevant for heatsink-coupled applications.

Is the AON6426 pin-compatible with other DFN5x6 N-Channel MOSFETs from different manufacturers?

The AON6426 uses a standard DFN5x6 package with 8-pin configuration (G, D, D, D, D, S, S, S) and defined pin 1 marking. While physical footprint matches common DFN5x6 variants, pin assignments vary - for example, Vishay SiR626DP shares identical pinout, but Infineon BSC014N04LS6 uses different terminal mapping. Always verify pinout diagrams before substitution. The AON6426 datasheet explicitly defines its top-view pin numbering and terminal roles, ensuring correct PCB layout for this specific device.