Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6504

Name: AON6504
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6504
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AON6504

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AON6504.pdf

Description:: MOSFET N-CH 30V 51A/85A 8DFN

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,271

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AON6504 from Alpha & Omega Semiconductor is a 30V N-Channel Trench Power MOSFET in DFN5x6 package, optimized for high-efficiency DC/DC conversion. It delivers 85A continuous drain current at V_GS=10V, features R_DS(on) < 2.1mΩ (10V) and < 3.2mΩ (4.5V), and supports high-current POL applications in servers and telecom power supplies.

For engineers reviewing the AON6504 datasheet, pinout, applications, or equivalent options, key selection criteria include low gate charge (Q_g=44–60nC), robust UIS rating, 100% R_g tested units, and thermal performance validated up to 150°C junction temperature.

Technical Context

The AON6504 employs AlphaMOS LV trench technology to achieve ultra-low on-resistance at logic-level gate drive (4.5V), enabling efficient operation in synchronous buck converters. Its gate threshold voltage (1.3–2.1V) ensures reliable turn-on with standard controller outputs, while low Q_gd/Q_gs ratio (7nC/9nC) supports fast switching with reduced Miller-induced shoot-through risk.

Thermal design is supported by a 1.5°C/W junction-to-case resistance and 55°C/W junction-to-ambient (on 1in² FR-4 board). The device is rated for 322A pulsed drain current and 90mJ avalanche energy (L=0.05mH), confirming ruggedness in unclamped inductive switching conditions typical of high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage compatible with 12V/24V input rails and 5V/3.3V output POL stages
I_D (V_GS=10V)	85A - Sustains high continuous current in compact DFN5x6 footprint without forced airflow
R_DS(on) (V_GS=4.5V)	< 3.2mΩ - Enables >95% efficiency in 4.5V-gate-driven synchronous rectifiers
Q_g (10V)	44–60nC - Reduces gate driver power loss and allows use with low-power PWM controllers
E_AS	90mJ - Confirmed avalanche ruggedness for reliable operation during transient overloads
R_θJC	1.5°C/W - Supports direct heatsink mounting for thermal management in high-power density designs
V_GS(th)	1.3–2.1V - Ensures full enhancement with standard 3.3V or 5V logic-level gate drivers

Pinout & Package

Package: DFN5x6 (5.0mm × 6.0mm, 1.0mm height), exposed drain pad (Pin 1–4, 7–8 connected to D), top-side marking includes part number and date code.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,4,7,8	Drain (D)	Internally tied to exposed copper pad - primary current path and thermal conduction path to PCB
5	Source (S)	Low-side return node; connects to power ground plane and provides reference for gate drive
6	Gate (G)	Control input; requires low-inductance routing due to 0.9–3Ω gate resistance and 44–60nC total charge

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	Enables high-efficiency operation with 3.3V/5V gate drivers in POL converters without level-shifting
100% UIS tested	Guarantees avalanche capability per unit - eliminates need for external snubbers in inductive switching
Low Q_gd/Q_gs ratio	Reduces Miller plateau duration and improves immunity to false turn-on during high dV/dt transitions
RoHS and halogen-free	Meets IPC-J-STD-609 Class 1 requirements for green electronics manufacturing and end-of-life compliance
High current density	85A continuous rating in 5×6mm DFN enables smaller PCB area vs. SO-8 or TO-252 alternatives

Applications

Server VRMs	Telecom DC/DC Converters
Use Scenario: High-current, multiphase buck converters supplying CPU/GPU core voltage in 1U/2U rack servers. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, switching at 300–1000kHz with 4.5V gate drive. Use Value: Sub-3.2mΩ R_DS(on) at 4.5V reduces conduction loss by ≥18% vs. comparable 5mΩ MOSFETs, directly improving VRM efficiency at 60–80A load.	Use Scenario: Isolated forward or LLC resonant converters in 48V telecom power systems delivering 12V/5V outputs. IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier operating with tight thermal constraints. Use Value: 1.5°C/W R_θJC and 90mJ E_AS enable reliable operation under burst-mode and line-transient stress without derating.
Industrial POL Modules	GPU Power Delivery
Use Scenario: Compact, fanless point-of-load modules for programmable logic controllers and motor drives requiring stable 3.3V/1.8V rails. IC Role / Device Role / Timing Role: Low-side FET in monolithic or discrete buck regulator handling 40–70A continuous current. Use Value: DFN5x6 package with exposed drain pad achieves 30% lower thermal resistance than SO-8 equivalents, allowing full 85A rating at 70°C case temperature.	Use Scenario: Multi-phase GPU voltage regulators in gaming and AI accelerators demanding rapid load-step response. IC Role / Device Role / Timing Role: High-frequency (≥1MHz) synchronous rectifier with minimal gate charge to support fast control loop bandwidth. Use Value: 44–60nC Q_g and 7nC Q_gd reduce switching transition time and gate driver power consumption, improving dynamic voltage regulation accuracy.

Server VRMs

Telecom DC/DC Converters

Use Scenario: High-current, multiphase buck converters supplying CPU/GPU core voltage in 1U/2U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, switching at 300–1000kHz with 4.5V gate drive.

Use Value: Sub-3.2mΩ R_DS(on) at 4.5V reduces conduction loss by ≥18% vs. comparable 5mΩ MOSFETs, directly improving VRM efficiency at 60–80A load.

Use Scenario: Isolated forward or LLC resonant converters in 48V telecom power systems delivering 12V/5V outputs.

IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier operating with tight thermal constraints.

Use Value: 1.5°C/W R_θJC and 90mJ E_AS enable reliable operation under burst-mode and line-transient stress without derating.

Industrial POL Modules

GPU Power Delivery

Use Scenario: Compact, fanless point-of-load modules for programmable logic controllers and motor drives requiring stable 3.3V/1.8V rails.

IC Role / Device Role / Timing Role: Low-side FET in monolithic or discrete buck regulator handling 40–70A continuous current.

Use Value: DFN5x6 package with exposed drain pad achieves 30% lower thermal resistance than SO-8 equivalents, allowing full 85A rating at 70°C case temperature.

Use Scenario: Multi-phase GPU voltage regulators in gaming and AI accelerators demanding rapid load-step response.

IC Role / Device Role / Timing Role: High-frequency (≥1MHz) synchronous rectifier with minimal gate charge to support fast control loop bandwidth.

Use Value: 44–60nC Q_g and 7nC Q_gd reduce switching transition time and gate driver power consumption, improving dynamic voltage regulation accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP020N04L	R_DS(on) = 2.0mΩ @ 10V, but 3.8mΩ @ 4.5V; higher Q_g (72nC)	Less suitable for 4.5V-gate-driven POL; better for 10V gate drive with higher peak current	Prefer AON6504 when 4.5V gate drive and low Q_g are critical; choose IPP020N04L only if 10V gate bias is available and higher R_DS(on) at low V_GS is acceptable
Vishay SiR626DP	R_DS(on) = 2.3mΩ @ 10V, 3.5mΩ @ 4.5V; same DFN5x6 package; 100% UIS tested	Nearly identical thermal and electrical specs; slightly higher R_DS(on) at 4.5V and 10V	Valid alternative where AON6504 is unavailable; verify layout compatibility due to identical footprint but different internal die layout affecting parasitic inductance

Compared with IPP020N04L and SiR626DP, the AON6504 offers the lowest R_DS(on) at 4.5V and lowest Q_g, making it optimal for high-efficiency, high-frequency, logic-level-driven power stages where thermal headroom and gate drive simplicity are prioritized.

Availability

AON6504 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial POL modules requiring stable component supply, consistent parametric performance, and long-term production availability.

Supply support for AON6504 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON6504 belongs to the AlphaMOS LV trench MOSFET product line, engineered specifically for high-current, high-efficiency DC/DC conversion in space-constrained, thermally demanding applications such as server and telecom power supplies.

FAQ

What is the maximum continuous drain current rating for the AON6504?

The AON6504 is rated for 85A continuous drain current at T_C = 25°C with V_GS = 10V. At T_C = 100°C, the rating drops to 41A due to thermal derating. The 85A value reflects package-limited current capacity under ideal heatsinking conditions, not silicon-limited capability - actual design current must be determined using R_θJC = 1.5°C/W and maximum T_J = 150°C.

Does the AON6504 support 4.5V gate drive in synchronous buck applications?

Yes, the AON6504 is explicitly characterized for 4.5V gate drive, with R_DS(on) < 3.2mΩ and guaranteed turn-on at V_GS(th) as low as 1.3V. Its low Q_g (21–28nC at 4.5V) and low Q_gd/Q_gs ratio make it well-suited for 4.5V-driven synchronous buck converters in POL and VRM designs where level-shifting is undesirable.

Is the AON6504 qualified for automotive applications?

No, the AON6504 is not automotive-qualified. Per its datasheet, it is designed and qualified for the consumer market only. It is not authorized for use in life-support devices or safety-critical automotive systems. For automotive-grade equivalents, consult AOS's AEC-Q101-qualified AlphaMOS HV or LV families - the AON6504 itself carries no AEC-Q101 certification or PPAP documentation.

What is the thermal resistance from junction to ambient (R_θJA) for the AON6504?

The AON6504 has an R_θJA of 55°C/W when mounted on a 1in² FR-4 board with 2oz copper in still air (TA = 25°C). This value assumes standard JEDEC test conditions and is highly dependent on PCB layout - adding thermal vias under the exposed drain pad can reduce effective R_θJA by 20–30%. For system-level thermal modeling, R_θJC = 1.5°C/W should be used when a heatsink is attached.

How does the AON6504 handle unclamped inductive switching stress?

The AON6504 is 100% UIS tested with a guaranteed single-pulse avalanche energy rating of 90mJ (L = 0.05mH). This confirms its ability to safely absorb inductive energy during hard-switching events without failure - a critical requirement in high-frequency buck converters where parasitic inductance can cause voltage overshoot exceeding V_DS rating. The test is performed per JEDEC JESD24-1.

AON6504 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2719 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 7.3W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6504 FAQ

1.How can I place an order for AON6504 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6504 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6504 reliable?

The price and inventory of AON6504 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6504 is usually 5 days.

3.What payment methods are accepted for AON6504?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6504 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6504?

AON6504 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6504 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6504?

For technical support, including AON6504 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6504 requirements.

6.How does Aetrix verify that AON6504 is sourced from the original manufacturer or authorized distributors?

All AON6504 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6504 meets industry standards.

7.What is the process for return or replacement of AON6504?

All AON6504 units undergo pre-shipment inspection (PSI). If there is an issue with AON6504, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6504 part is unused and in its original packaging.

Return procedure for AON6504:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …