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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6506

Name: AON6506
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6506
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON6506

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AON6506.pdf

Description:: MOSFET N-CH 30V 33A/36A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON6506 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power AlphaMOS (αMOS LV) discrete MOSFET optimized for high-efficiency DC/DC conversion, with R_DS(ON) < 2.6 mΩ at V_GS = 10 V, 36 A continuous drain current, and low gate charge (Q_g = 44–60 nC). It serves as a primary synchronous rectifier or high-side switch in point-of-load (POL) and isolated telecom DC/DC converters.

For engineers reviewing the AON6506 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN5x6 package thermal performance (R_θJC = 1.5°C/W), 100% UIS-tested ruggedness, body-diode reverse recovery characteristics (t_rr = 19.6 ns, Q_rr = 42.7 nC), and gate threshold voltage range (1.2–2.2 V at 25°C).

Technical Context

The AON6506 employs Alpha & Omega's latest αMOS LV trench technology to achieve ultra-low on-resistance at both 4.5 V and 10 V gate drive, enabling efficient operation in 5 V and 12 V gate-drive systems. Its low R_DS(ON) (≤3.8 mΩ @ 4.5 V) and low Q_g/Q_gd ratio support fast switching with reduced conduction and switching losses.

Designed for high-current, thermally constrained applications, it features a DFN5x6-8L package with exposed drain pad for enhanced thermal dissipation, junction-to-case resistance of 1.5°C/W, and 100% R_g tested for gate reliability. The device supports unclamped inductive switching (UIS) up to 144 A pulsed drain current with full avalanche energy rating (E_AS = 33 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in POL converters
R_DS(ON) @ V_GS=10 V	< 2.6 mΩ - Enables ≤0.94 W conduction loss at 36 A, critical for high-current server VRMs
R_DS(ON) @ V_GS=4.5 V	< 3.8 mΩ - Supports efficient operation with 5 V gate drivers in compact industrial DC/DC modules
Q_g (10 V)	44–60 nC - Low total gate charge reduces driver power demand and enables MHz-class switching
t_rr / Q_rr	19.6 ns / 42.7 nC - Fast, low-charge body diode recovery minimizes shoot-through risk in synchronous buck topologies
R_θJC	1.5 °C/W - Enables direct heatsink mounting for >83 W steady-state power dissipation at T_C = 25°C
I_D (continuous)	36 A @ T_C = 25°C - Package-limited current rating suitable for single-phase 50–60 A multiphase converter legs

Pinout & Package

Package: DFN5x6-8L (exposed drain pad, bottom-side thermal interface). Pin numbering per top view: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Source, Pin 4 = Source, Pin 5 = Drain, Pin 6 = Drain, Pin 7 = Drain, Pin 8 = Drain.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; low-input-capacitance node (C_iss = 2719 pF) requiring <3 Ω gate resistor for optimal EMI and ringing control
2, 3, 4	Source	Common source connection; multiple pins reduce bond-wire inductance and improve current sharing in high-dI/dt switching
5–8	Drain	Power output terminal; all four pins tied to large exposed copper pad for minimal thermal resistance and high-current routing

Key Features

Feature	Design Value
Ultra-low R_DS(ON) at 4.5 V	Enables use with 5 V gate drivers without sacrificing efficiency-critical for legacy controller compatibility
100% UIS tested	Guarantees robustness under unclamped inductive load transients (e.g., synchronous rectifier failure modes)
Low Q_gd/Q_g ratio	Reduces Miller-induced turn-off delay and improves hard-switching stability in high-frequency POL designs
RoHS and halogen-free	Meets IPC-1752A material declaration requirements for consumer and industrial end-equipment compliance
Body-diode optimized t_rr	Minimizes reverse-recovery cross-conduction loss in synchronous buck converters operating above 300 kHz

Applications

Server Point-of-Load Converters	Telecom Isolated DC/DC Modules
Use Scenario: High-density 12 V–1 V step-down VRMs powering CPU/GPU cores in rack-mounted servers. IC Role / Device Role / Timing Role: Primary high-side synchronous MOSFET in multiphase buck converters, switching at 500 kHz–1 MHz. Use Value: Sub-3 mΩ R_DS(ON) at 10 V drive reduces conduction loss by >35% vs. standard SO-8 MOSFETs, improving full-load efficiency by 1.2–1.8%.	Use Scenario: Secondary-side synchronous rectification in 48 V input isolated flyback or forward converters for telecom base stations. IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diodes, driven by transformer-coupled or active gate control. Use Value: 36 A continuous rating and 144 A pulsed capability support high-power density designs; low Q_rr eliminates need for snubbers in 300–500 kHz operation.
Industrial Motor Drive Gate Drivers	Automotive ADAS Power Supplies
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC auxiliary supplies. IC Role / Device Role / Timing Role: Input-stage MOSFET regulating 24 V down to 5 V/3.3 V for logic and gate driver bias rails. Use Value: DFN5x6 thermal performance allows operation at 85°C ambient without forced air; 100% R_g test ensures gate oxide integrity over 10-year field life.	Use Scenario: Compact 12 V–3.3 V buck converter supplying radar sensor SoCs and camera ISPs in automotive ADAS ECUs. IC Role / Device Role / Timing Role: Main power switch in AEC-Q101-qualified DC/DC module (when used with qualified board layout and derating). Use Value: Low V_GS(th) (1.2–2.2 V) ensures reliable turn-on with automotive-grade 3.3 V microcontroller GPIOs; RoHS/halogen-free meets IATF 16949 material requirements.

Server Point-of-Load Converters

Telecom Isolated DC/DC Modules

Use Scenario: High-density 12 V–1 V step-down VRMs powering CPU/GPU cores in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary high-side synchronous MOSFET in multiphase buck converters, switching at 500 kHz–1 MHz.

Use Value: Sub-3 mΩ R_DS(ON) at 10 V drive reduces conduction loss by >35% vs. standard SO-8 MOSFETs, improving full-load efficiency by 1.2–1.8%.

Use Scenario: Secondary-side synchronous rectification in 48 V input isolated flyback or forward converters for telecom base stations.

IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diodes, driven by transformer-coupled or active gate control.

Use Value: 36 A continuous rating and 144 A pulsed capability support high-power density designs; low Q_rr eliminates need for snubbers in 300–500 kHz operation.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Supplies

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC auxiliary supplies.

IC Role / Device Role / Timing Role: Input-stage MOSFET regulating 24 V down to 5 V/3.3 V for logic and gate driver bias rails.

Use Value: DFN5x6 thermal performance allows operation at 85°C ambient without forced air; 100% R_g test ensures gate oxide integrity over 10-year field life.

Use Scenario: Compact 12 V–3.3 V buck converter supplying radar sensor SoCs and camera ISPs in automotive ADAS ECUs.

IC Role / Device Role / Timing Role: Main power switch in AEC-Q101-qualified DC/DC module (when used with qualified board layout and derating).

Use Value: Low V_GS(th) (1.2–2.2 V) ensures reliable turn-on with automotive-grade 3.3 V microcontroller GPIOs; RoHS/halogen-free meets IATF 16949 material requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(ON) = 1.4 mΩ @ 10 V (lower), Q_g = 51 nC (similar), DSO-8 package (larger footprint, higher R_θJA)	Higher current density but requires larger PCB area and less effective thermal coupling than DFN5x6	Select when absolute lowest R_DS(ON) is prioritized over board space and thermal performance
Vishay SiR872DP	R_DS(ON) = 2.8 mΩ @ 10 V (slightly higher), Q_g = 49 nC, PowerPAK® 5x6 package (identical footprint, same pinout)	Drop-in replacement with identical mechanical interface and thermal metrics; slightly higher conduction loss	Select for supply chain diversification while maintaining identical layout, thermal design, and assembly process

Compared with BSC014N04LS6 and SiR872DP, the AON6506 delivers best-in-class thermal resistance (R_θJC = 1.5°C/W) and superior 4.5 V drive capability (<3.8 mΩ), making it optimal for space-constrained, high-temperature POL and telecom applications where gate drive voltage headroom is limited.

Availability

AON6506 is available at Aetrix Electronics and suitable for server point-of-load converters, telecom isolated DC/DC modules, and industrial motor drive auxiliary power supplies requiring stable component supply and consistent parametric performance across production lots.

Supply support for AON6506 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AlphaMOS LV product line, including the AON6506, was engineered specifically for high-current, high-frequency DC/DC conversion where low R_DS(ON), fast switching, and rugged UIS performance are essential.

FAQ

What is the maximum continuous drain current rating for the AON6506 at 100°C case temperature?

The AON6506 supports 14 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN5x6 package and ensures safe operation within the 150°C maximum junction temperature. Designers must verify PCB copper area and airflow to maintain T_C ≤ 100°C under full load. The AON6506 datasheet provides de-rating curves in Figure 13 for precise thermal design.

Does the AON6506 support 5 V gate drive in synchronous buck applications?

Yes, the AON6506 is explicitly characterized for 4.5 V gate drive, with R_DS(ON) < 3.8 mΩ and guaranteed turn-on at V_GS(th) as low as 1.2 V. This makes the AON6506 suitable for 5 V gate-driven synchronous buck converters, including those using integrated controllers with 5 V gate outputs. Its low Q_g (21–28 nC @ 4.5 V) further ensures efficient switching at typical POL frequencies.

Is the AON6506 qualified for automotive applications?

The AON6506 is designed and qualified for the consumer market per its datasheet disclaimer and is not AEC-Q101 qualified. While its electrical and thermal specs may suit certain ADAS power supply functions, Aetrix Electronics does not recommend or warrant the AON6506 for automotive safety-critical systems. For automotive use, consider AOS's AEC-Q101-qualified AlphaMOS variants or consult the manufacturer for qualified alternatives to the AON6506.

What is the body-diode forward voltage of the AON6506 at 1 A and 25°C?

The AON6506 body-diode forward voltage is 0.7 V minimum and 1.0 V maximum at I_S = 1 A and V_GS = 0 V, per the Electrical Characteristics table. This low V_SD supports efficient freewheeling in synchronous rectification and reduces conduction loss during dead-time intervals. The AON6506 body diode is optimized for fast recovery (t_rr = 19.6 ns), minimizing associated switching losses.

How is thermal performance validated for the AON6506 in the DFN5x6 package?

Thermal performance of the AON6506 is validated per JEDEC standards: R_θJC = 1.5°C/W measured with the device mounted to a large heatsink, and R_θJA = 64°C/W measured on a 1 in² FR-4 board with 2 oz. copper in still air. These values are confirmed via transient dual-interface testing and published in the Thermal Characteristics section of the AON6506 datasheet (Rev 0, Feb. 2012, pages 1–2).

AON6506 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Ta), 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2719 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 4.2W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6506 FAQ

1.How can I place an order for AON6506 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6506 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6506 reliable?

The price and inventory of AON6506 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6506 is usually 5 days.

3.What payment methods are accepted for AON6506?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6506 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6506?

AON6506 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6506 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6506?

For technical support, including AON6506 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6506 requirements.

6.How does Aetrix verify that AON6506 is sourced from the original manufacturer or authorized distributors?

All AON6506 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6506 meets industry standards.

7.What is the process for return or replacement of AON6506?

All AON6506 units undergo pre-shipment inspection (PSI). If there is an issue with AON6506, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6506 part is unused and in its original packaging.

Return procedure for AON6506:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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